Datasheet SE1030W Datasheet (SIGE)

Ω 50

Ω

R

LightCharger™ 2.5 Gb/s Transimpedance Amplifier

Applications

§ SONET/SDH-based transmission systems, test
equipment and modules

§ OC-48 fibre optic modules and line termination

§ ATM optical receivers

§ Gigabit Ethernet

§ Fibre Channel

Features

§ Single +3.3 V power supply

§ Input noise current = 360 nA rms when used with

a 0.5 pF detector

§ Transimpedance gain = 2.3 kΩ into a 50 Ω load
(differential)

§ On-chip automatic gain control gives input
current overload of 2.6 mA pk and max output
voltage swing of 300 mV pk-pk

§ Differential 50 Ω outputs

§ Bandwidth (-3 dB) = 2.4 GHz

§ Wide data rate range = 50 Mb/s to 2.5 Gb/s

§ Constant photodiode reverse bias voltage = 1.5 V

(anode to input, cathode to VCC)

§ Minimal external components, supply decoupling

only

§ Operating junction temperature range = -40°C to

+125°C

§ Equivalent to Nortel Networks AB89-A2A

Ordering Information

SE1030W

Final

Product Description

SiGe Semiconductor offers a portfolio of optical
networking ICs for use in high-performance optical
transmitter and receiver functions, from 155 Mb/s up
to 12.5 Gb/s.

SiGe Semiconductor’s SE1030W is a fully integrated,
silicon bipolar transimpedance amplifier; providing
wideband, low noise preamplification of signal current
from a photodetector. It features differential outputs,
and incorporates an automatic gain control
mechanism to increase dynamic range, allowing input
signals up to 2.6 mA peak. A decoupling capacitor on
the supply is the only external circuitry required. A
system block diagram is shown after the functional
description, on page 3.

Noise performance is optimized for 2.5 Gb/s
operation, with a calculated rms noise based

sensitivity of –26 dBm for 10
using a detector with 0.5 pF capacitance and a
responsivity of 0.9 A/W, with an infinite extinction ratio
source.

-10

bit error rate, achieved

Type Package Remark

SE1030W Bare Die Shipped in

Waffle Pack

Functional Block Diagram

VCC or +ve supply

Input

Current

TZ_IN

SE1030
TzAmp

2.5 Gb/s

f

Tz Amp

Bandgap
Reference

43-DST-01 § Rev 1.5 § May 24/02 1 of 9

Automatic Gain Control

Integrator Rectifier

Output
Driver

50

OUTP

OUTN

Bondpad Diagram

SE1030W

LightCharger™ 2.5 Gb/s Transimpedance Amplifier

Final

VCC

1

2 DNC

Top

View

TZ_IN

3

7 6 5 4

Bondpad Description

Pad No. Name Description

11

VCC

10

OUTP

9

OUTN

8

VCC VEE2 VEE1 VEE1 VEE1

1 VCC
2 DNC Do not connect.

3 TZ_IN Input pad (connect to photodetector anode).
4 VEE2

5 VEE1
6 VEE1
7 VEE1
8 VCC
9 OUTN Negative differential voltage output.

10 OUTP Positive differential voltage output.
11 VCC

Positive supply (+3.3 V), pads 1, 8 & 11 are connected on chip. Only one pad needs
to be bonded.

Negative supply (0V) – Note this is separate ground for the input stage, which is AC
coupled on chip. There is no DC current through this pad.
Negative supply (0V), pads 5, 6 & 7 are connected on chip. Only one pad needs to be
bonded.
Negative supply (0V), pads 5, 6 & 7 are connected on chip. Only one pad needs to be
bonded.
Negative supply (0V), pads 5, 6 & 7 are connected on chip. Only one pad needs to be
bonded.
Positive supply (+3.3 V), pads 1, 8 & 11 are connected on chip. Only one pad needs
to be bonded.

Positive supply (+3.3 V), pads 1, 8 & 11 are connected on chip. Only one pad needs
to be bonded.

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2 2

TZ

LightCharger™ 2.5 Gb/s Transimpedance Amplifier

Functional Description
Amplifier Front-End

The transimpedance front-end amplifies an input
current from a photodetector, at pin TZ_IN, to produce
a differentia l output voltage with the feedback resistor
Rf determining the level of amplification (see the
functional block diagram on page 1). An automatic
gain control loop varies this resistor, to ensure that
the output from the front-end does not saturate the
output driver stage that follows. This gain control
allows input signals of up to 2.6 mA peak.

The input pin TZ_IN is biased at 1.5 V below the
supply voltage VCC, allowing a photodetector to have
a constant reverse bias by connecting the cathode to

3.3 V. This enables full single rail operation.

The front-end stage has its own supply ground
connection (VEE2) to achieve optimum noise
performance and maintain integrity of the high-speed
signal path. The front-end shares the VCC (+3.3 V)

System Block Diagram

SE1030W

Final

connection with the rem ainder of the circuitry, which has
a separate ground (VEE1).

Output driver stage

The output driver acts as a buffer stage, capable of
swinging up to 300 mVpk-pk differential into a 100 Ω
load. The small output swings allow ease of use with

low voltage post amplifiers (e.g. 3.3 V parts).
Increasing optical input level gives a positive-going
output signal on the OUTP pin.

Automatic Gain Control (AGC)

The AGC circuit monitors the voltages from the output
driver and compares them to an internal reference
level produced via the on-chip bandgap reference
circuit. When this level is exceeded, the gain of the
front-end is reduced by controlling the feedback
resistor Rf.

A long time-constant integrator is used within the
control loop of the AGC with a typical low frequency
cut-off of 5 kHz.

Receiver Module

AGC

Amplifier

2.5 GHz

2.5 Gb/s

Clock

Data

Clock & Data

Recovery

2

SE1230

LOS

2

SE1030W

Amplifier

PIN

43-DST-01 § Rev 1.5 § May 24/02 3 of 9

SE1030W

LightCharger™ 2.5 Gb/s Transimpedance Amplifier

Final

Absolute Maximum Ratings

These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage
to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions
defined below.

Symbol Parameter Min Max Unit

VCC Supply Voltage –0.7 6.0 V
VIO Voltage at any input or output –0.5 VCC+0.5 V

I

IO

IIO Current sourced into pin TZ_IN –5 5 mA

Current sourced into any input or output except
TZ_IN

–20 20 mA

V

ESD

V

ESD

Tstg Storage Temperature –65 150

Electrostatic Discharge (100 pF, 1.5 kΩ) except
TZ_IN

Electrostatic Discharge (100 pF, 1.5 kΩ) pin
TZ_IN

–2 2 kV

–0.25 0.25 kV

Recommended Operating Conditions

Symbol Parameter Min Typ Max Unit

VCC Supply Voltage 3.1 3.3 3.5 V
Tj Operating Junction Temperature –40 125

DC Electrical Characteristics

Symbol Parameter Min Typ Max Unit

ICC max Supply Current (max input current) 66 101 mA
ICC zero Supply Current (zero input current) 52 85 mA
lagc AGC Threshold 42

µA pk-pk

°C

°C

Vin Input Bias Voltage

Vout Output Bias Voltage

Rout Output Resistance 35 50 65

VCC–

1.57

VCC–

1.52

VCC–

0.30

VCC–

1.47
V

V

Ω

43-DST-01 § Rev 1.5 § May 24/02 4 of 9

SE1030W

LightCharger™ 2.5 Gb/s Transimpedance Amplifier

AC Electrical Characteristics

Symbol Parameter Min Typ Max Unit

BW (3dB) Small Signal Bandwidth at –3dB point 1.8 2.4 GHz

Final

Tz

Dri Input Data Rate 50 2500 Mb/s
Voutmax Maximum Differential Output Voltage 300 mV pk-pk
Flf Low Frequency Cut -off 5 kHz
lOL Input Current before overload (2.5 Gb/s NRZ data) 2600
Pol Optical Overload +1.6 dBm
Nrms Input Noise Current (in 2 GHz) 360 500 nA rms

DC and AC electrical characteristics are specified under the following conditions:

Supply Voltage (VCC).........................................3.1 V to 3.5 V

Junction Temperature (Tj) ..................................–40°C to 125°C

Load Resistor (RL)...............................................50 Ω AC coupled via 220 nF, for each output

Photodetector Capacitance (Cd) .......................0.5 pF

Input bond wire inductance................................1 nH

Photodetector responsivity.................................0.9 A/W

Transimpedance (Tz) measured with 4 µA mean photocurrent

Differential Transimpedance (50 Ω on each output,
f = 100 MHz)

1.6 2.3 3.1 kΩ

µA pk-pk

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SE1030W

LightCharger™ 2.5 Gb/s Transimpedance Amplifier

Bondpad Configuration

The bondpad center coordinates are referenced to the center of the lower left pad (pad 4). All dimensions are in
microns (µm).

Final

Pad No. Name

1 VCC -307.0 698.0
2 DNC -307.0 583.0
3 TZ_IN -307.0 334.0
4 VEE2 0 0
5 VEE1 134.0 0
6 VEE1 364.0 0
7 VEE1 498.0 0
8 VCC 697.0 0

9 OUTN 697.0 174.0
10 OUTP 697.0 304.0
11 VCC 697.0 698.0

X

Coordinate

(µm)

Y

Coordinate

(µm)

43-DST-01 § Rev 1.5 § May 24/02 6 of 9

SE1030W

LightCharger™ 2.5 Gb/s Transimpedance Amplifier

Final

The diagram below shows the bondpad configuration of the SE1030W Transimpedance Amplifier. Note that the
diagram is not to scale. All bondpads are 92 µm x 92 µm with a passivation opening of 82 µm x 82 µm. There are
three VCC and three VEE1 pads for ease of wire bonding; the VCC and VEE1 pads respectively are connected on ­chip and only one pad of each type is required to be bonded out.

Mechanical die visual inspection criteria per MIL-STD-883 Method 2010.10 Condition B Class Level B.

1004.0

1004.0

115.0249.0334.0

115.0249.0334.0

Top

Top

944.0

944.0

View

View

123.0

307.0 134.0 134.0230.0 199.0

123.0

307.0 134.0 134.0230.0 199.0

123.0

123.0

1250.0

1250.0

Side View

Side View

All Dimensions in Microns (µm)

All Dimensions in Microns (µm)

174.0 130.0 394.0400.0

174.0 130.0 394.0400.0

43-DST-01 § Rev 1.5 § May 24/02 7 of 9

TZ

Amplifier

1 8 11 3 4 5 6 7 10 9

SE1030W

LightCharger™ 2.5 Gb/s Transimpedance Amplifier

Final

Applications Information

Note that all VCC pads (1, 8, 11) are connected on-chip, as are the VEE1 pads (5, 6, 7), and only one pad of each
type is required to be bonded out. However, in order to minimize inductance for optimum high speed performance, it
is recommended that all power pads are wire bonded. The VEE2 pad is not connected on chip to VEE1 and must be
bonded out separately.

+3.3 V

PIN Bias

1 nF min

1 nF min

PIN

0 V

TZ_IN

VEE2

SE1030W

VCC

VEE1

OUTP

OUTN

To 50 O loads,
AC coupled

43-DST-01 § Rev 1.5 § May 24/02 8 of 9

SE1030W

LightCharger™ 2.5 Gb/s Transimpedance Amplifier

Final

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Product Preview
The datasheet contains information from the product concept specification. SiGe Semiconductor reserves the right to change
information at any time without notification.

Preliminary
The datasheet contains information from the design target specification. SiGe Semiconductor reserves the right to change
information at any time without notification.

Final
The datasheet contains information from the final product specification. SiGe Semiconductor reserves the right to change
information at any time without notification. Production testing may not include testing of all parameters.

Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor Inc. assumes
no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or
other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any
patent or other intellectual property rights of SiGe Semiconductor Inc. or third parties. Specifications mentioned in this publication
are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe
Semiconductor Inc. products are NOT authorized for use in implantation or life support applications or systems without express
written approval from SiGe Semiconductor Inc.

LightCharger™ is a trademark owned by SiGe Semiconductor.
Copyright 2002 SiGe Semiconductor

All Rights Reserved

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