Datasheet SDD9916, SDU9916 Datasheet (SamHop Microelectronics)

S DU/D9916

S amHop Microelectronics C orp.

N-C hannel E nhancement Mode Field E ffect Transistor

PR ODUC T SUMMAR Y

VDS S

20V

ID

20A

R DS (O N) ( m

25 @ V GS = 4. 5V

35 @ V GS = 2. 7V

D

G

S

S DU S E RIE S
TO-252AA(D-PAK )

W

) TY P

G

D

S

S DD SE R IE S
TO-251(l-PA K)

ABS OLUTE MAX IMUM R ATINGS (TA=25 C unless otherwise noted)

F E ATUR E S

S uper high dense cell des ign for low R

R ugged and relia ble.

TO-252 and T O -251 P ackage.

D

G

S

August , 2002

DS (O N

).

P arameter

Drain-S ource Voltage

G ate-S ource Voltage

Drain C urrent-Continuous @ T J =125 C

-P ulsed

a

Drain-S ource Diode F orward C urrent 20

Maximum P ower Dissipa tion

@ Tc=25 C

S ymbol

V

DS

V

G S

I

D

I

DM

I

S

P

D

Derate above 25 C

Operating and S torage

Temperature R ange

TJ, T

S TG

-55 to 150

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, J unction-to-C ase

Thermal R esistance, J unction-to-Ambient

R

R

J C

J A

Limit Unit

20

12

20

60

V

V

A

A

A

50

0.4

3

50

W

W / C

C

C

C

/W

/W

1

S DU/D9916

E LE C T R IC AL C HAR AC T E R IS TIC S (T A 25 C unles s otherwis e noted)

P arameter

S ymbol

=

C ondition

Min

Typ

OF F C HAR AC TE R IS TIC S

Drain-S ource Breakdown Voltage

Zero G ate Voltage Drain Current

G ate-Body Leakage

ON C HAR ACT E R IS TIC S

b

G ate Threshold Voltage

Drain-S ource On-S tate R es is tance

On-S tate Drain C urrent

0V, ID 250uA

B V

DS S

I

DS S

I

G S S

V

G S (th)

R

DS (ON)

I

D(ON)

g

F S

c

VDS 20V, V

V

G S

V

DS VG S

V

G S

V

G S

V

DS

V

DS

=

=

= =

=

G S

8

V, VDS 0V

=

, ID = 250uA

=

=

= 5V, V

= =

4.5V, I

2.5V, I

10V, I

D

D

G S

D

=

=

= 4.5V

0V

=

6.0A

5.2A

6.0A

20

0.9

20

1.0

25

35

247

V

G S

DYNAMIC C HAR AC TE R IS TIC S

C

Max

1

100

1.5

30

40

Unit

V

uA

nA

V

m ohm

m ohm

A

SF orward Transconducta nce

Input C apacitance

Output C apacitance

R evers e Trans fer C apa citance

S WIT C HING CHAR AC TE R IS TIC S

Turn-On Delay Time

R ise Time

Turn-Off Delay T ime

F all Time

Total G a te C harge

G ate-S ource Charge

G ate-Drain Charge

P

C

IS S

V

DS

=10V, V

G S

= 0V

C

OS S

C

R S S

c

t

D(ON)

t

r

t

D(OFF )

t

f

Q

g

f =1.0MH

VDD = 10V,
ID = 1A,
V

G E N

= 4.5V,

G E N

ohm

= 6

RL = 10
R

Z

ohm

VDS =10V, ID = 6A,

Q

Q

gs

gd

2

V

G S

=4.5V

650

270

80

6.5

11.5

12

12 20

10

2.8

2.6

14 ns

23

25

15

F

P

F

P

F

ns

ns

ns

nC

nC

nC

S DU/D9916

E LE C T R IC AL C H AR AC T E R IS TIC S (TA=25 C unless otherwise noted)

P arameter

S ymbol

C ondition

Min

Typ

C

Max

Unit

5

DR AIN-S OU R C E DIO DE C HAR AC T E R IS T IC S

Diode F orward Voltage

V

S D

b

V

G S

= 0V, Is =1.7A

0.72

1.2

V

Notes
a.S urface Mounted on F R 4 B oard, t 10sec.

b.Pulse Test:P ulse W idth 300us , Duty C ycle 2%.

＜ ＜

＜

c.G uaranteed by des ign, not s ubject to production testing.

25

VGS =10, 9,8, 7,6, 5,4V

20

15

10

5

ID, Drain C urrent(A)

0

0 0. 5 1 1. 5 2 2. 5 3

VDS , Drain-to-Source Voltage (V)

F igure 1. Output Chara cteris tics

VGS =3V

25

20

15

10

T j=1 25 C

5

ID, Dra in C urrent (A)

0

0. 0 0. 5 1 1.5 2 2.5 3

VGS , G ate-to-S ource Voltage (V )

25 C

F igure 2. Tra nsfer Characteris tics

-55 C

C , C apa cita nce (pF)

180 0

150 0

120 0

900

600

300

0

0

5

VDS , Drain-to S ource Voltage (V)

F igure 3. C apacitance

1. 8
VGS =4.5 V

ID=6A

1. 6

1. 4

1. 2

C iss

C oss

C rss

10

15

20

1. 0

On-R esistance(O hms)

(Normalized)

0. 8

R DS (O N),

0. 6

-50 0 50 100 150

Tj, J unction T emperature ( C )

F igure 4. On-R es ista nce Va riation with

Temperature

3

S DU/D9916

1.09

VDS=V

1.06

1.03

1.00

0.97

Vth, Normalized

0.94

0.91

G ate-S ource T hreshold Volta ge

-50 -25 0 25 50 75 100 125 150

Tj, J unction T emperature ( C )

G S

ID=250uA

F igure 5. G ate Threshold V ariation

with Temperature

36

30

24

18

12

6

gFS , T rans conductance ( S )

0

0 3 6 9 1 2 15

VDS=10V

1.15

1.10

1.05

1.00

0.95

0.90

B VD SS , Normalized

0.85

Dra in-S ource Breakdown Volta ge

ID=250uA

-50 -25 0 25 50 75 100 125 150

Tj, J unction T emperature ( C )

F igure 6. B reakdown Volta ge Varia tion

with Temperature

20

10

1

Is , S ource-drain current ( A)

0

0.4 0. 6 0.8 1.0 1.2 1. 4

TJ=25 C

5

IDS , Dra in-S ource C urrent (A)

F igure 7. T ransconductance V ariation

with Dra in C urrent

5

VDS=10V

4

ID=10A

3

2

1

VGS , Gate to S ource V oltage (V )

0

0 2 4 6 8 10 12 14

Qg, T ota l G ate C harge (nC )

16

F igure 9. G ate Charge

VSD , Body Diode Forward Voltage (V )

F igure 8. B ody Diode F orward Voltage

Varia tion with S ource C urrent

300
200

100

imit

(O N) L

DS

R

10

V

G S

ID, Dra in C urrent (A )

0.5

S ingle P ulse

1

0.1

=4.5V

Tc=25 C

1 10 3 0 60

VDS , Drain-S ource V oltage ( V)

1ms

10ms

100 ms

1s

DC

F igure 10. Maximum S afe
Ope rating Area

4

S DU/D9916

DD

V

on

t

d(off)

t

r

d(on)

R

IN

V

V

G S

G EN

R

G

L

D

OU T

V

S

t

OU T

V

IN

V

10%

t

90%

10% 10%

INVE R TE D

50% 50%

P ULS E W IDT H

90%

t

off

f

t

90%

6

F igure 11. S witching T est C ircuit

2

1

D=0. 5

0. 2

0. 1

0. 1

0. 05

0. 02

0. 01

-5

10

0. 01

S ING LE P UL S E

-4

10

r(t), Normalized E ffe ctive

T rans ient Thermal Impeda nce

F igure 13. Normalized T herma l T rans ient Impedance Curve

F igure 12. S witching W aveforms

-3

10

S quare Wave P ulse D uration (sec)

-2

10

DM

P

1

t

2

t

1. R θJC (t)=r (t) * R θJ C

2. R θJC =S ee D atas heet

3. TJ M-T c = PDM * R θJC ( t)

4. Duty C ycle , D=t1/t2

-1

10

1 10

5