Datasheet SDD40N03L, SDU40N03L Datasheet (SamHop Microelectronics)

S DU/D40N03L

S amHop Microelec tronics C orp.

Augus t , 2002

N-C hannel Logic Level E nhancement Mode Field E ffect T ransis tor

PR ODUC T S UMMAR Y

VDS S

30V

ID

40A

R DS (O N) ( m

9 @ VGS = 10V

13 @ V GS = 4. 5V

D

G

S

S DU S E R IE S
TO-252AA(D-P AK )

W

) TYP

G

D

S

S DD SE RIE S
TO-251(l-P AK)

ABS OLUT E MAXIMUM R ATINGS (TC=25 C unless otherwise noted)

F E ATUR ES

S uper high dense cell design for low R

R ugged and reliable.

TO-252 and T O -251 P ackage.

D

G

S

DS (O N

).

P a rameter

Drain-S ource Voltage

G ate-S ource Voltage 20

Drain C urrent-C ontinuous @ T J =125 C

-P ulsed

a

Drain-S ource Diode F orward C urrent 40

Maximum P ower Dissipation

@ T c=25 C

S ymbol

V

DS

V

G S

I

D

I

DM

I

S

P

D

120

Derate above 25 C

Opera ting and S torage

Temperature R ange

TJ, T

S TG

-55 to 175

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, J unction-to-C as e

Thermal R esistance, J unction-to-Ambient

R

R

J C

J A

Limit Unit

30

V

V

40

A

A

A

50

0.3

3

50

W

W / C

C

C

C

/W

/W

1

S DU/D40N03L

E LE C T R IC AL C HAR AC TE R IS T IC S (T C =25 C unles s otherwis e noted)

P arameter

OF F C HAR AC TE R IS TIC S

Drain-S ource B reakdown Voltage

S ymbol

B V

DS S

C ondition

V

G S

= 0V, ID = 250uA

Min

30

Typ

Max

Unit

V

Zero G ate Voltage Drain C urrent

G ate-B ody Leakage

ON C HAR AC T E R IS TIC S

a

G ate T hreshold Voltage

Drain-S ource On-S tate R esistance

On-S tate Drain C urrent

DYNAMIC C HAR AC TE R IS TIC S

b

Input C apacitance

Output C apacitance

R evers e T rans fer Capacitance

S WIT C HING C HAR AC T E R IS TIC S

b

I

I

V

G S (th)

R

DS (ON)

I

D(ON)

g

C

C

C

DS S

G S S

F S

IS S

OS S

R S S

V

DS

= 24V, V

V

G S

= 20V, V

V

DS

= V

G S

, ID = 250uA

V

G S

= 10V, ID =20A

V

G S

= 4.5V, ID = 10A

V

DS

= 10V, V

V

DS

= 10V, ID = 20A

V

DD

=15V, V

f = 1.0MH

Z

GS

G S

G S

= 0V

DS

= 0V

= 10V

= 0V

1 1.5

40

9

13

30

1375

670

200

10

100

3

10

16

uA

nA

V

m ohm

m ohm

A

SF orward Trans conductance

P

F

P

F

P

F

Turn-O n Delay Time

R ise Time

Turn-O ff Delay Time

F a ll time

Total G ate C harge

G ate-S ource C harge

G ate-Drain C harge

t

D(ON)

t

t

D(OFF)

t

Q

Q

Q

VDD = 15V,

r

ID =1A,
V
R

f

VDS = 10V,ID = 40A,V

g

VDS = 10V,ID = 40A,V

gs

gd

VDS = 10V, ID = 40A,
V

2

G S

G E N

G S

= 10V,

= 6

=10V

ohm

G S

=10V

G S

=4.5V

30

32

132

30

40

19.5

8.2

5.3

50

23.5

ns

ns

ns

ns

nC

nC

nC

nC

S DU/D40N03L

E LE C T R IC AL C HAR AC T E R IS T IC S (TC=25 C unles s otherwis e noted)

P a ra meter

S ymbol

C ondition

Min

Typ

Max

Unit

DR AIN-S OUR C E DIO DE C HAR AC T E R IS T IC S

Diode F orward V oltage

Notes

a.P ulse Test:P ulse W idth 300us , Duty C ycle 2% .
b.Guaranteed by des ign, not s ubject to production tes ting.

40

35

30

25

20

15

10

ID, Dra in C urrent ( A)

5

0

0 0. 5 1 1.5 2 2. 5 3

VDS , Dra in-to-S ource Voltage (V )

F igure 1. Output C haracteris tics F igure 2. Transfer C hara cteris tics

VGS =10, 9,8, 7,6 ,5V

V

S D

VGS =4V

a

V

G S

= 0V, Is = 25A

40

30

20

10

ID, Dra in C urrent ( A)

0

25 C

T j=125 C

-55 C

0 1 2 3 4 5 6

VGS , G ate-to-S ource Voltage (V)

1.3

V

6

360 0

300 0

240 0

180 0

120 0

C , C apa citanc e (pF )

600

0

0 5 1 0 15 20 25 30

VDS , Dra in-to S ource Voltage (V)

F igure 3. Capacitance

C iss

C oss

C rss

1. 3

VGS =10V

1. 2

1. 1

1. 0

0. 9

0. 8

Dra in-S ource, On-R esistanc e

R DS (O N), Normalize d

0. 7
0 10 2 0 30 4 0

ID, Dra in C urrent(A)

T j=125 C

25 C

-55 C

F igure 4. On-R esistance Variation with
Drain C urrent a nd Tempera ture

3

S DU/D40N03L

1.15

VDS=V

1.10

1.05

1.00

0.95

Vth, N ormaliz ed

0.90

0.85

6

G ate-S ource T hreshold V oltage

0.80

-50 -25 0 25 50 75 100 125 150

Tj, Junction T emperature ( C)

G S

ID=250uA

F igure 5. G ate Threshold V ariation

with T emperature

60

VDS=10V

50

40

30

20

1.15

1.10

1.05

1.00

0.95

B VDS S , N ormalized

0.90

Dra in-S ource B rea kdown V oltage

0.85

-50 -25 0 25 50 75 100 125 150

Tj, Junction T emperature ( C)

ID=250uA

F igure 6. Brea kdown Voltage V ariation

with T emperature

40

10

1.0

10

gFS , T ransconductance (S )

0

0 5 10 15 20

IDS , Drain-S ource C urrent (A)

F igure 7. Transconductance Variation

with Drain C urrent

10

VDS=10V

8

ID=40A

6

4

2

VGS , G ate to S ource V oltage (V )

0

0 5 10 15 20 2 5 30 35 40

Qg, Total G ate Cha rge (nC )

F igure 9. G ate C harge

4

Is , S ource-drain current (A)

0.1

0.4 0. 6 0.8 1.0 1. 2 1.4

VS D, Body Diode Forward V oltage (V)

F igure 8. Body Diode F orward Voltage

Variation with S ource C urrent

300
200

100

imit

(O N) L

DS

R

10

V

G S

ID, Dra in C urrent (A)

0.5

S ingle P ulse

1

0.1

=10V

Tc=25 C

1 10 30 60

VDS , Drain-S ource Voltage (V)

1ms

10ms

100 ms

1s

DC

F igure 10. Ma ximum S afe
O pera ting Area

S DU/D40N03L

DD

V

on

t

d(off)

t

r

d(on)

R

IN

V

V

G S

G EN

R

G

L

D

OU T

V

S

t

OU T

V

IN

V

10%

t

90%

10% 10%

INVE R T E D

50% 50%

P ULS E W IDT H

90%

t

off

f

t

90%

6

F igure 11. S witching Tes t C ircuit

2

1

D=0. 5

0. 2

0. 1

0. 1

0. 05

0. 02

0. 01

-5

10

0. 01

S ING LE P UL S E

-4

10

r(t), Norma lized E ffective

T rans ient Thermal Impedance

F igure 13. Normalized T hermal Transient Impedance C urve

F igure 12. S witching Waveforms

-3

10

S quare W ave P ulse D uration (sec)

-2

10

DM

P

1

t

2

t

1. R θJA (t)=r (t) * R θJA

2. R θJA=S ee Data shee t

3. TJ M-T A = PDM* R θJA ( t)

4. Duty C ycle , D=t1/t2

-1

10

1 10

5