Datasheet SDP10S30, SDT10S30 Datasheet (INFINEON)

SDP10S30
SDT10S30

Silicon Carbide Schottky Diode

• Revolutionary semiconductor

material - Silicon Carbide

• Switching behavior benchmark

• No reverse recovery

• No temperature influence on

the switching behavior

• No forward recovery

Type Package Ordering Code

SDP10S30 PG-TO220-3-1. Q67040-S4372

SDT10S30 PG-TO220-2-2. Q67040-S4447

thinQ! SiC Schottky Diode

Product Summary

V

RRM

Q

c

I

F

PG-TO220-2-2. PG-TO220-3-1.

Marking

D10S30

D10S30

Pin 1 Pin 2

n.c. C

C

300

23 nC

10 A

Pin 3

A

A

V

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Continuous forward current, T

=100°C

C

RMS forward current, f=50Hz

Surge non repetitive forward current, sine halfwave

TC=25°C, tp=10ms

Repetitive peak forward current

Tj=150°C, TC=100°C, D=0.1

Non repetitive peak forward current

tp=10µs, TC=25°C

i 2t value, T

=25°C, t

C

=10ms ∫i

p

Repetitive peak reverse voltage V

Surge peak reverse voltage V

Power dissipation, T

=25°C

C

Operating and storage temperature T

Symbol Value Unit

I

F

I

FRMS

I

FSM

I

FRM

I

FMAX

2

dt

RRM

RSM

P

tot

T

,

j

stg

10 A

14

36

45

100

6.5

300 V

300

65 W

-55... +175

A²s

°C

Rev. 1.2

Page 1

2005-02-17

Thermal Characteristics

SDP10S30
SDT10S30

Parameter

Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case

R

thJC

- - 2.3 K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

Static Characteristics

Diode forward voltage

IF=10A, Tj=25°C

=10A, Tj=150°C

I

F

Reverse current

VR=300V, Tj=25°C

=300V, Tj=150°C

V

R

V

I

F

-

-

R

-

-

1.5

1.5

15

20

1.7

1.9

200

1000

V

µA

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Rev. 1.2

Page 2

2005-02-17

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

SDP10S30
SDT10S30

Parameter

AC Characteristics

Total capacitive charge

V

=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C

R

Switching time

V

=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C

R

2)

1)

Total capacitance

V

=0V, TC=25°C, f=1MHz

R

V

=150V, TC=25°C, f=1MHz

R

V

=300V, TC=25°C, f=1MHz

R

Symbol Values Unit

min. typ. max.

Q

c

t

rr

C

- 23 - nC

- n.a. - ns

-

-

-

600

55

40

pF

-

-

-

Rev. 1.2

Page 3

2005-02-17

SDP10S30

j

SDT10S30

1 Power dissipation

P

= f (TC)

tot

70

W

60

55

50

45

tot

P

40

35

30

25

20

15

10

5

0

0 20 40 60 80 100 120 140

°C

T

2 Diode forward current

= f (TC)

I

F

parameter:

11

A

F

I

180

C

Tj≤175 °C

9

8

7

6

5

4

3

2

1

0

0 20 40 60 80 100 120 140

°C

T

180

C

3 Typ. forward characteristic

= f (VF)

I

F

parameter:

20

A

16

14

F

I

12

10

T

, tp = 350 µs

8

6

4

2

0

0.6 0.8 1 1.2 1.4 1.6 1.8

-40°C
25°C
100°C
125°C
150°C

V

V

F

2.2

4 Typ. forward power dissipation vs.

average forward current

P

=

f(I

) T

F(AV)

F

32

=100°C, d = tp/T

C

W

24

F(AV)

20

P

16

12

8

4

0

0 2 4 6 8 10 12 14

d=1
d=0.5
d=0.2
d=0.1

A

I

18

F(AV)

Rev. 1.2

Page 4

2005-02-17

SDP10S30

SDT10S30

5 Typ. reverse current vs. reverse voltage

=f(VR)

I

R

2

10

µA

1

10

0

10

R

I

-1

10

V

150°C
125°C
100°C
25°C

V

R

300

-2

10

-3

10

-4

10

50 100 150 200

6 Transient thermal impedance

Z

= f (tp)

thJC

parameter :

1

10

K/W

0

10

thJC

-1

Z

10

-2

10

-3

10

-4

10

10

SDP10S30

single pulse

-7

10

D = t

-6

10

/T

p

-5

-4

-3

10

10

10

-2

D = 0.50

0.20

0.10

0.05

0.02

0.01

s

t

p

10

0

7 Typ. capacitance vs. reverse voltage

C= f(V

parameter: T

C

450

pF

350

300

250

200

150

100

50

0

10

)

R

= 25 °C, f = 1 MHz

C

0

10

1

10

2

V

V

R

10

8 Typ. C stored energy

E

=f(VR)

C

2.5

µJ

C

E

1.5

1

0.5

3

0

0 50 100 150 200

300

V

V

R

Rev. 1.2

Page 5

2005-02-17

9 Typ. capacitive charge vs. current slop

e

SDP10S30
SDT10S30

Qc=f(di

F

/dt)

parameter:

22

nC

18

16

c

14

Q

12

10

8

6

4

2

0
100 200 300 400 500 600 700 800

T

= 150 °C

j

IF*2

IF*0.5

A/µs

diF/dt

I

F

1000

Rev. 1.2

Page 6

2005-02-17

SDP10S30
SDT10S30

PG-TO220-3-1

P-TO220-3-1

dimensions

symbol [mm] [inch]

min max min max

A 9.70 10.30 0.3819 0.4055

B 14.88 15.95 0.5858 0.6280

C 0.65 0.86 0.0256 0.0339

D 3.55 3.89 0.1398 0.1531

E 2.60 3.00 0.1024 0.1181

F 6.00 6.80 0.2362 0.2677

G 13.00 14.00 0.5118 0.5512

H 4.35 4.75 0.1713 0.1870

K 0.38 0.65 0.0150 0.0256

L 0.95 1.32 0.0374 0.0520

M

N 4.30 4.50 0.1693 0.1772

P 1.17 1.40 0.0461 0.0551

T 2.30 2.72 0.0906 0.1071

2.54 typ. 0.1 typ.

Rev. 1.2

Page 7

2005-02-17

PG-TO-220-2-2

A

N

SDP10S30
SDT10S30

P

symbol

E

D

U

V

B

H

F

W

J

X

L

G

T

C

M

K

A 9.70 10.10 0.3819 0.3976

B 15.30 15.90 0.6024 0.6260

C 0.65 0.85 0.0256 0.0335

D 3.55 3.85 0.1398 0.1516

E 2.60 3.00 0.1024 0.1181

F 9.00 9.40 0.3543 0.3701

G 13.00 14.00 0.5118 0.5512

H 17.20 17.80 0.6772 0.7008

J 4.40 4.80 0.1732 0.1890

K 0.40 0.60 0.0157 0.0236

L

M

N

P 1.10 1.40 0.0433 0.0551

T

U

V

W

X 0.00 0.40 0.0000 0.0157

dimensions

[mm] [inch]

min ma x min ma x

0.41 typ.1.05 ty p.

2.54 ty p. 0.1 ty p.

4.4 typ. 0.173 typ.

2.4 typ. 0.095 typ.

0.26 typ.6.6 typ.

0.51 typ.13.0 typ.

7.5 typ. 0.295 typ.

Rev. 1.2

Page 8

2005-02-17

SDP10S30
SDT10S30

Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

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characteristics.

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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

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For further information on technology, delivery terms and conditions and prices please contact your nearest
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For information on the types in question please contact your nearest Infineon Technologies Office.

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Rev. 1.2

Page 9

2005-02-17