Datasheet SA621DH, SA621DK Datasheet (Philips)

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SA621

1GHz - Low voltage LNA, mixer and VCO

Product specification 1997 Nov 07

INTEGRATED CIRCUITS

IC17 Data handbook

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

2

1997 Nov 07 853-1849 018660

DESCRIPTION

The SA621 is a combined low-noise amplifier, mixer and VCO
designed for high-performance low-power communication systems
from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise
figure at 881MHz with 15dB gain and an IP3 intercept of -7dBm at
the input. The gain is stabilized by on-chip compensation to vary
less than ±0.2dB over -40 to +85°C temperature range. The
wide-dynamic-range mixer has a 12dB noise figure and IP3 of
+4.5dBm at the input at 881MHz. The integrated VCO circuit with
external resonator produces a high quality LO signal that drives the
mixer and is buffered to an external PLL synthesizer IC. The
nominal current drawn from a single 3V supply is 13.3mA.
Additionally, the entire circuit can be powered down to further reduce
the supply current to less than 20µA.

FEATURES

•Low current consumption

•Outstanding gain and noise figure

•Excellent gain stability versus temperature and supply voltage

•LNA, mixer and VCO power down capability

•Monotonic VCO frequency vs control voltage

PIN CONFIGURATION

SR01429

1
2
3
4
5
6
7
8
9

10

11

12

13

14

20
19
18
17
16
15

GND

LNA OUT
V

CC

LNA IN
GND

GND

MIXER IN

MIXER OUT

MIXER OUT

GND

GND

BYPASS

GND

TANK

GND

GND

LO OUT

PD2

PD1

GND

Figure 1. Pin Configuration

APPLICATIONS

•900MHz cellular and cordless front-end

•Spread spectrum receivers

•RF data links

•UHF frequency conversion

•Portable radio

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

20-Pin Thin Shrink Small Outline Package (Surface-mount, TSSOP)

-40 to +85°C

SA621DH SOT360-1

BLOCK DIAGRAM

SR01428

43215

20 19 18 17 16

761098

15 14 13 12 11

LO GND BYPASS

GND

V

CC

LNA

IN GND

MIXER

IN

MIXER

OUT

MIXER

OUT

PD1 PD2 GND

LNA

OUT

GND

OUT

GND

TANK

LNA

GND

GND GND

10pF 10pF

Figure 2. SA621 Block Diagram

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

1997 Nov 07

3

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

V

CC

Supply voltage

1

-0.3 to +6 V

V

IN

Voltage applied to any other pin -0.3 to (VCC + 0.3) V

P

D

Power dissipation, TA = 25°C (still air)2

20-Pin Plastic SSOP

980 mW

T

JMAX

Maximum operating junction temperature 150 °C

P

MAX

Maximum power input/output +20 dBm

T

STG

Storage temperature range –65 to +150 °C

NOTE:

1. Transients exceeding 8V on V

CC

pin may damage product.

2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,

θ

JA

: 20-Pin SSOP = 110°C/W

3. Pins 19 and 20 are ESD sensitive (mixer outputs).

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RA TING UNITS

V

CC

Supply voltage 2.7 to 5.5 V

T

A

Operating ambient temperature range -40 to +85 °C

T

J

Operating junction temperature -40 to +105 °C

DC ELECTRICAL CHARACTERISTICS

VCC = +3.0V , TA = 25°C; unless otherwise stated.

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

MIN TYP MAX

UNITS

Full power-on 13.3 mA

pp

LNA powered-down 10 mA

ICCSu ly current

Standby (VCO + bias) 5.7 mA

Full power-down 20 µA

V

T

PD logic threshold voltage 1.2 1.6 1.8 V

V

IH

Logic 1 level 2.0 V

CC

V

V

IL

Logic 0 level –0.3 0.8 V

I

IL

PD1 input current Enable = 0.4V 10 µA

I

IH

PD2 input current Enable = 2.4V 10 µA

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

1997 Nov 07

4

AC ELECTRICAL CHARACTERISTICS

VCC = +3.0V , TA = 25°C; RFIN = 881MHz, f

VCO

= 964MHz; unless otherwise stated.

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

–3

TYP

+3

UNITS

Low Noise Amplifier

f

RF

RF input frequency range 800 1000 MHz

S

21

Amplifier gain 15 dB

S

21

Amplifier gain in power-down mode -28 dB

∆S21/∆T Gain temperature sensitivity enabled 0.006 dB/°C

∆S21/∆f Gain frequency variation 800MHz - 1.0GHz ±0.013 dB/MHz

S

12

Amplifier reverse isolation @ 881 MHz -28 dB

S

11

Amplifier input match With ext. impedance matching -10 dB

S

22

Amplifier output match -10 dB

P

-1dB

Amplifier input 1dB gain compression -20 dBm

IP3 Amplifier input third order intercept -7 dBm

NF Amplifier noise figure 1.7 dB

t

ON

Amplifier turn-on time (Enable Lo → Hi) 120 µs

t

OFF

Amplifier turn-off time (Enable Hi → Lo) 0.3 µs

Mixer

PG

C

Mixer power conversion gain: RP = RL = 1.2kΩ,

fRF = 881MHz, fLO = 964MHz,

f

IF

= 83MHz

8.7 dB

S

11M

Mixer input match Ext. impedance matching req. -10 dB

NF

M

Mixer SSB noise figure 12 dB

P

-1dB

Mixer input 1dB gain compression -10 dBm

IP3

M

Mixer input third order intercept 4.5 dBm

IP

2INT

Mixer input second order intercept 15 dBm

P

RFM-IF

Mixer RF feedthrough RFIN = -25dBm -41 dBm

P

LO-IF

LO feedthrough to IF LO = -10dBm -23 dBm

P

LO-RFM

LO to mixer input feedthrough -52 dBm

P

LO-RF

LO to LNA input feedthrough -38 dBm

Voltage Controlled Oscillator (VCO)

1

f

VCO

VCO frequency range 883 1083 MHz

P

VCO

VCO power out See Figure 3 -10 -8 dBm

p

2

Offset = 30kHz -109

VCO hase noise

2

Offset = 60kHz -115

dBc/Hz

Harmonic content -22 dBc
Residual modulation 45 dB
Pulling figure VSWR=2:1, all phases ±500 kHz
Pushing figure ±100 kHz/V

Overall System

G

SYS

System gain LNA + Mixer 23.0 23.7 24.4 dB

NOTES:

1. VCO performance dependent on external components.

2. Based on copper-plated 2mm ceramic resonator (1/4 wave), f = 1025MHz, and can be improved by silver-plated or larger resonators.

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

1997 Nov 07

5

Table 1. Power ON/OFF Control Logic

PD1 PD2

0 0 Full chip power-down

0 1 or open VCO on, Mixer on, LNA power-down
1 or open 0 VCO on, LNA and Mixer power-down
1 or open 1 or open Full chip power-on (default)

SR01424

+

–

20 19 18 17 16 15 14 13 12 11

12345678910

PD1 PD2 GND GND GND TANK GND GND BYPASS

MIXER GND GND GND GND

V

CC

LO

OUT

IF

OUT

VCO

OUT

SA621

C3

6.8pF

L1
560nH

L4
560nH

C2

10nF

C14

6.8pF

C13
33pF

C8
10nF

3V

C12
100pF

C1
100pF

V

CC

OUT

MIXER

OUT

MIXER

IN

LNA

IN

LNA
OUT

L3

6.8nH

10nF

0.1µF

C9

C11

L6
12nH

C10

2.2pF

C6

10nF

R2

24Ω

MURATA 2mm

1/4 WAVE

FREQ=1025MHz

C5

.5pF

C10

220pF

L7

18.5nH
Hi–Q

D1

R1

5.1kΩ

VCO
CONTROL

D7

10nF

C4

2.2pF

Figure 3. SA621 Applications Circuit

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

1997 Nov 07

6

PERFORMANCE CHARACTERISTICS

SR01425

-15

2.5 3 3.5 4 4.5 5 5.5

V

CC

(V)

LNA 1dB (dBm)

-40°C

25°C

LNA 1dB Compression vs V

CC

-16

-17

-18

-19

-20

-21

-22

-23

-24

-25

-10.0

2.5 3 3.5 4 4.5 5 5.5

V

CC

(V)

MIXER 1dB (dBm)

-40°C

25°C

85°C

Mixer 1dB Compression vs V

CC

-10.5

-11.0

-11.5

-12.0

-9.0

-9.5

-28.0

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

LNA GAIN (dB)

-40°C

25°C

85°C

LNA Gain (Disabled) vs V

CC

-28.5

-29.0

-29.5

-30.0

-30.5

-31.0

-27.0

-27.5

7.0

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

MIXER IP3 (dBm)

-40°C

25°C

85°C

Mixer IP3 vs V

CC

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

-11

2.5 3 3.5 4 4.5 5 5.5

V

CC

(V)

LNA IP3 (dBm)

-40°C

25°C

LNA IP3 vs V

CC

-2

-3

-4

-5

-6

-7

-8

-9

-10

0

85°C

85°C

-12

VCC (V)

V POWER OUT (dBm)

VCO Power Out vs V

CC

CC

-6.00

2.5 3 3.5 4 4.5 5 5.5

-40°C

25°C

85°C

-7.00

-8.00

-9.00

-10.00

-11.00

-12.00

-4.00

-5.00

0

Figure 4.

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

1997 Nov 07

7

PERFORMANCE CHARACTERISTICS

SR01426

2.5 3 3.5 4 4.5 5 5.5

V

CC

(V)

I (mA)

-40°C

25°C

85°C

ICC vs VCC and Temperature

13.0

12.8

12.6

12.4

12.2

12.0

11.8

13.8

13.6

13.4

13.2

2.5 3 3.5 4 4.5 5 5.5

V

CC

(V)

MIXER GAIN (dB)

-40°C

85°C

Mixer Power Gain vs V

CC

2.5 3 3.5 4 4.5 5 5.5

V

CC

(V)

LO to LNA IN (dBm)

-40°C

25°C

85°C

LO to LNA In Feedthrough vs V

CC

2.5 3 3.5 4 4.5 5 5.5

V

CC

(V)

LO to MIXER IN (dBm)

-40°C

LO to Mixer In Feedthrough vs V

CC

-35

-36

-37

-38

-39

-40

-41

-42

-43

-44

-45

2.5 3 3.5 4 4.5 5 5.5

V

CC

(V)

LO to IF (dBm)

-40°C

25°C

85°C

LO to IF Feedthrough vs V

CC

-20

-21

-22

-23

-24

-25

-26

-27

-28

-29

-30

12

11

10

9

8

7

6

5

4

25°C

25°C

85°C

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

ICC vs VCC at Room Temperature

14

12

10

8

6

4

0

ICC Full Chip Power–On

2

I

CC LNA Off, Mixer & VCO On

I

CC VCO On, LNA & Mixer Off

I (mA)

CC

-44

-46

-48

-50

-52

-54

-56

-58

-60

-62

-64

CC

Figure 5.

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

1997 Nov 07

8

PERFORMANCE CHARACTERISTICS

SR01427

2.5 3 3.5 4 4.5 5 5.5

V

CC

(V)

MIXER IN to IF (dBm)

-40°C

85°C

Mixer In to IF Feedthrough vs V

CC

15.0

2.5 3 3.5 4 4.5 5 5.5

V

CC

(V)

LNA GAIN (dB)

-40°C

25°C

85°C

LNA Gain (Enabled) vs V

CC

14.8

14.6

14.4

14.2

14.0

13.8

13.6

15.6

15.4

15.2

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

MIXER NOISE FIGURE (dB)

-40°C

25°C

85°C

Mixer Noise Figure vs V

CC

12.5

12.4

12.3

12.2

12.1

12.0

11.9

11.8

11.7

11.6

11.5

2.5 3 3.5 4 4.5 5 5.5

V

CC

(V)

LNA NOISE FIGURE (dB)

-40°C

25°C

85°C

LNA Noise Figure vs V

CC

2.0

1.9

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

2.5 3 3.5 4 4.5 5 5.5

V

CC

(V)

85°C

VCO Phase Noise vs V

CC

@60kHz Offset

–100.0

–105.0

–110.0

–115.0

–120.0

–125.0

2.5 3 3.5 4 4.5 5 5.5

V

CC

(V)

VCO PHASE NOISE (dBc/Hz

VCO Phase Noise vs VCC @ 30kHz Offset

–100.0

–105.0

–110.0

–115.0

–120.0

–125.0

–95.0

25°C

40°C

85°C

–95.0

40°C

–35

–36

–37

–38

–39

–40

–41

–42

–43

–44

–45

25°C

VCO PHASE NOISE (dBc/Hz

Figure 6.

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

1997 Nov 07

9

CH2

S

11

1 U FS

3

2

1

4

1: 40.1 Ω

-129.6 Ω
200 MHz

2: 24.0 Ω

-62.9 Ω
400 MHz

3: 18.6 Ω

-37.4 Ω
600 MHz

START 100. 000 000 MHz STOP 1 200. 000 000 MHz

SR01252

4: 14.1 Ω

10.5 pF

-16.7 Ω
900 MHz

3

CH1

S

22

1 U FS

2

1

4

1: 40.5 Ω

-28.2 Ω
700 MHz

2: 36.1 Ω

-12.4 Ω
800 MHz

3: 34.7 Ω

3.5 Ω
900 MHz

START 700. 000 000 MHz STOP 1 200. 000 000 MHz

4: 34.9 Ω

3.74 Ω

661.4 pH
900 MHz

A. S11 DATA

B. S22 DATA

Figure 7. Typical S11 of LNA at 3V

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

1997 Nov 07

10

3

CH1

S

22

1 U FS

2

1

4

1: 40.5 Ω

-28.2 Ω
700 MHz

2: 36.1 Ω

-12.4 Ω
800 MHz

3: 34.7 Ω

3.5 Ω
900 MHz

START 700. 000 000 MHz STOP 1 200. 000 000 MHz

SR01253

4: 34.9 Ω

3.74 Ω

661.4 pH
900 MHz

Figure 8. Typical S22 of LNA at 3V

CH1

S

21

10 U FS

1: 6.7 U

142.5 °
200 MHz

2: 5.9 U

112.3 °
400 MHz

3: 5.9 U

78.1 °
600 MHz

START 100. 000 000 MHz STOP 1 200. 000 000 MHz

1

3

2

4

SR01254

4: 4.5 U

21.2°
900 MHz

Figure 9. Typical S21 of LNA at 3V

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

1997 Nov 07

11

CH2

S

12

50 mU FS

1: 1.9 mU

83.0 °
200 MHz

2: 1.6 mU

133.5 °
400 MHz

3: 11.4 mU

141.5 °
600 MHz

START 100. 000 000 MHz STOP 1 200. 000 000 MHz

3

2

4

SR01255

1

4: 27.9 mU

106.1°
900 MHz

Figure 10. Typical S12 of LNA at 3V

3

CH1

S

11

1 U FS

2

1

4

1: 122.8 Ω

-144.9 Ω
200 MHz

2: 58.0 Ω

-86.8 Ω
400 MHz

3: 45.9 Ω

-62.3 Ω
600 MHz

START 100. 000 000 MHz STOP 1 200. 000 000 MHz

SR01256

4: 26.6 Ω

-43.2 Ω

4.085 pF
900 MHz

Figure 11. Typical S11 of Mixer at 3V

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

1997 Nov 07

12

4

CH1

S

11

/M

1 U FS

2

1

3

1: -11.766 Ω

289.41 Ω
200 MHz

2: 11.953 Ω

134.05 Ω
400 MHz

3: 16.555 Ω

78.48 Ω
600 MHz

START 100. 000 000 MHz STOP 1 200. 000 000 MHz

SR01257

3: 18.652 Ω

31.516 Ω

5.5732 nH
900 MHz

Figure 12. Typical 1/S11 of VCO (Pin 7)at 3V

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

1997 Nov 07

13

Table 2. Typical S-Parameters of LNA at 3V

LNA

Freq (MHz)

|S11|

(U)

<S11 (deg)

|S21|

(U)

<S21 (deg)

|S12|

(U)

<S12 (deg)

|S22|

(U)

<S

22

(deg)
100 0.86 -20 7.4 160 0.001 92 0.59 -10
122 0.86 -24 7.1 156 0.001 62 0.58 -12
144 0.85 -28 7.0 151 0.001 105 0.58 -14
166 0.83 -32 6.9 148 0.000 92 0.57 -16
188 0.82 -36 6.8 144 0.002 100 0.57 -18
210 0.81 -41 6.7 140 0.002 74 0.56 -20
232 0.80 -45 6.6 136 0.002 100 0.55 -22
254 0.79 -48 6.5 133 0.001 84 0.54 -25
276 0.78 -52 6.4 130 0.001 103 0.53 -27
298 0.76 -56 6.3 126 0.002 94 0.52 -29
320 0.75 -59 6.3 123 0.002 67 0.51 -31
342 0.73 -63 6.2 119 0.002 108 0.50 -33
364 0.71 -66 6.1 116 0.002 118 0.48 -35
386 0.70 -69 6.0 113 0.001 103 0.47 -36
408 0.69 -72 5.9 111 0.001 176 0.46 -37
430 0.68 -76 5.9 109 0.004 174 0.45 -37
452 0.69 -78 6.0 106 0.006 162 0.46 -38
474 0.68 -82 6.1 102 0.007 160 0.47 -42
496 0.67 -85 6.1 97 0.008 153 0.47 -46
518 0.66 -89 6.1 93 0.010 146 0.46 -50
540 0.65 -92 6.1 89 0.009 142 0.45 -55
562 0.63 -96 6.1 85 0.010 138 0.43 -59
584 0.62 -99 6.0 81 0.011 146 0.42 -64
606 0.62 -102 5.9 77 0.011 141 0.40 -69
628 0.61 -104 5.8 72 0.013 137 0.38 -73
650 0.61 -107 5.7 69 0.013 131 0.36 -78
672 0.60 -109 5.7 65 0.016 130 0.34 -84
694 0.60 -112 5.6 61 0.016 132 0.31 -90
716 0.59 -115 5.5 57 0.017 129 0.29 -97
738 0.59 -118 5.5 53 0.019 128 0.27 -104
760 0.59 -121 5.3 48 0.021 123 0.24 -113
782 0.59 -124 5.3 44 0.021 122 0.22 -122
804 0.59 -126 5.1 40 0.022 120 0.21 -133
826 0.59 -129 5.0 36 0.024 118 0.19 -145
848 0.59 -132 4.9 31 0.026 116 0.18 -159
870 0.59 -135 4.8 26 0.027 112 0.17 -175
892 0.59 -138 4.6 22 0.028 108 0.18 169
914 0.59 -142 4.5 18 0.028 106 0.19 155
936 0.59 -144 4.3 14 0.028 106 0.20 142
958 0.59 -148 4.2 9 0.030 100 0.22 130
980 0.59 -151 4.0 4 0.031 99 0.24 120

1002 0.59 -153 3.8 0 0.031 95 0.26 111
1024 0.59 -157 3.6 -2 0.032 91 0.28 102
1046 0.59 -160 3.5 -6 0.032 86 0.30 95
1068 0.59 -164 3.3 -10 0.033 86 0.33 88
1090 0.59 -167 3.2 -14 0.033 81 0.35 82
1112 0.59 -170 3.0 -18 0.031 79 0.36 77
1134 0.58 -172 2.8 -22 0.030 46 0.38 72
1156 0.58 -175 2.7 -25 0.031 79 0.39 67
1178 0.57 -178 2.5 -28 0.031 74 0.41 63
1200 0.57 178 2.4 -31 0.029 72 0.42 59

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

1997 Nov 07

14

T able 3. Typical S-Parameters of Mixer at 3V

Mixer

Freq (MHz)

|S11|

(U)

<S11 (deg)

100 0.73 -11
122 0.73 -147
144 0.72 -16
166 0.72 -19
188 0.72 -21
210 0.71 -24
232 0.70 -27
254 0.70 -29
276 0.69 -32
298 0.68 -34
320 0.67 -37
342 0.66 -39
364 0.64 -42
386 0.63 -–44
408 0.62 -46
430 0.61 -48
452 0.59 -50
474 0.58 -52
496 0.57 -53
518 0.56 -54
540 0.55 -56
562 0.55 -57
584 0.54 -59
606 0.54 -61
628 0.54 -62
650 0.54 -64

Mixer

Freq (MHz)

|S11|

(U)

<S11 (deg)

672 0.54 -65
694 0.54 -67
716 0.54 -69
738 0.54 -71
760 0.54 -73
782 0.55 -76
804 0.55 -78
826 0.55 -80
848 0.55 -82
870 0.55 -85
892 0.56 -87
914 0.55 -90
936 0.56 -93
958 0.56 -96

980 0.56 -98
1002 0.56 -101
1024 0.57 -104
1046 0.57 -106
1068 0.57 -110
1090 0.57 -112
1112 0.57 -115
1134 0.57 -118
1156 0.57 -121
1178 0.57 -124
1200 0.57 -127

Philips Semiconductors Product specification

SA6211GHz low voltage dLNA, mixer and VCO

1997 Nov 07

15

TSSOP20: plastic thin shrink small outline package; 20 leads; body width 4.4 mm SOT360-1

Philips Semiconductors Product specification

SA6211GHz low voltage dLNA, mixer and VCO

1997 Nov 07

16

Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.

LIFE SUPPORT APPLICA TIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.

This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.

Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone [phone]

DEFINITIONS

Data Sheet Identification Product Status Definition

Objective Specification

Preliminary Specification

Product Specification

Formative or in Design

Preproduction Product

Full Production

This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.

This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.

Philips Semiconductors and Philips Electronics North America Corporation

register eligible circuits under the Semiconductor Chip Protection Act.

 Copyright Philips Electronics North America Corporation 1996

All rights reserved. Printed in U.S.A.

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