
RHRP840CC, RHRP860CC
Data Sheet January 2000
8A, 400V - 600V Hyperfast Dual Diodes
The RHRP840CC and RHRP860CC are hyperfast dual
diodes with soft recovery characteristics (t
< 30ns). They
rr
have half the recovery time of ultrafast diodes and are of
silicon nitride passivated ion-implanted epitaxial planar
construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switchingpower
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits, thus
reducing power loss in the switching transistors.
Formerly development type TA49059.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRP840CC TO-220AB RHRP840C
RHRP860CC TO-220AB RHRP860C
NOTE: When ordering, use the entire part number.
File Number 3964.2
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .<30ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AB
ANODE 2
CATHODE
ANODE 1
C
Symbol
K
A
1
Absolute Maximum Ratings (Per Leg) T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(TC = 150oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
A
2
= 25oC, Unless Otherwise Specified
C
CATHODE
(FLANGE)
RRM
RWM
F(AV)
FRM
FSM
STG
RHRP840CC RHRP860CC UNITS
400 600 V
400 600 V
400 600 V
88A
16 16 A
100 100 A
75 75 W
20 20 mJ
-65 to 175 -65 to 175
AVL
, T
R
D
J
o
C
1
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

RHRP840CC, RHRP860CC
Electrical Specifications (Per Leg) T
= 25oC, Unless Otherwise Specified
C
RHRP840CC RHRP860CC
SYMBOL TEST CONDITION
V
F
IF = 8A - - 2.1 - - 2.1 V
IF = 8A, TC = 150oC - - 1.7 - - 1.7 V
I
R
VR = 400V - - 100 - - - µA
VR = 600V - - - - - 100 µA
VR = 400V, TC = 150oC - - 500 - - - µA
VR = 600V, TC = 150oC -----500µA
t
rr
IF = 1A, dIF/dt = 200A/µs--30--30ns
IF = 8A, dIF/dt = 200A/µs--35--35ns
t
a
t
b
Q
RR
C
J
R
θJC
IF = 8A, dIF/dt = 200A/µs - 18 - - 18 - ns
IF = 8A, dIF/dt = 200A/µs - 10 - - 10 - ns
IF = 8A, dIF/dt = 200A/µs - 56 - - 56 - nC
VR = 10V, IF = 0A - 25 - - 25 - pF
--2--2oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
R
= Thermal resistance junction to case.
θJC
pw = Pulse width.
D = Duty cycle.
UNITSMIN TYP MAX MIN TYP MAX
Typical Performance Curves
40
10
175oC
, FORWARD CURRENT (A)
1
F
I
0.5
0 0.5 1 1.5 2 2.5 3
100oC
, FORWARD VOLTAGE (V)
V
F
25oC
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
1000
100
10
1
, REVERSE CURRENT (µA)
0.1
R
I
0.01
0 200 400 600300 500
100
VR, REVERSE VOLTAGE (V)
175oC
100oC
25oC

RHRP840CC, RHRP860CC
Typical Performance Curves (Continued)
35
TC = 25oC, dIF/dt = 200A/µs
30
25
20
15
10
t, RECOVERY TIMES (ns)
5
0
0.5
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
4
81
60
TC = 100oC, dIF/dt = 200A/µs
50
40
30
20
t, RECOVERY TIMES (ns)
10
0
0.5
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
FIGURE 3. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 4. trr,taAND tbCURVES vs FORWARD CURRENT
90
TC = 175oC, dIF/dt = 200A/µs
75
60
45
30
t, RECOVERY TIMES (ns)
15
0
0.5
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
814
10
8
6
4
2
, AVERAGE FORWARD CURRENT (A)
F(AV)
I
0
125 135 155 175165
SQ. WAVE
145
, CASE TEMPERATURE (oC)
T
C
DC
814
FIGURE 5. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
60
50
40
30
20
10
, JUNCTION CAPACITANCE (pF)
J
C
0
0 50 100 150 200
VR, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
3

Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t
CONTROL I
1 ANDt2
V
GE
I
MAX
L = 40mH
R < 0.1Ω
E
AVL
Q
1
t
= 1A
= 1/2LI2 [V
= IGBT (BV
1
R(AVL)
CES
F
R
t
2
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
/(V
- VDD)]
R(AVL)
> DUT V
R(AVL)
L
DUT
G
IGBT
)
RHRP840CC, RHRP860CC
CURRENT
SENSE
LR
+
V
DD
-
0
dI
F
I
F
dt
t
rr
t
a
V
AVL
t
b
0.25 I
RM
I
RM
CURRENT
Q
1
SENSE
DUT
+
V
DD
V
DD
-
IV
t
0
I
L
I
L
t
1
t
2
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
t
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