Datasheet RHRU5040, RHRU5060 Datasheet (Intersil)

RHRU5040, RHRU5050, RHRU5060

Data Sheet April 1995 File Number 3919.1

50A, 400V - 600V Hyperfast Diodes

RHRU5040, RHRU5050 and RHRU5060 (TA49065) are
hyperfast diodes with soft recovery characteristics
(t

< 45ns). They have half the recovery time of ultrafast

RR

diodes and are silicon nitride passivated ion-implanted epi­taxial planar construction.

These devices are intended for use as freewheeling/clamp­ing diodes and rectifiers in a variety of switching power sup­plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc­ing power loss in the switching transistors.

Ordering Information

PACKAGING AVAILABILITY

PART NUMBER PACKAGE BRAND

RHRU5040 TO-218 RHRU5040
RHRU5050 TO-218 RHRU5050
RHRU5060 TO-218 RHRU5060

NOTE: When ordering, use the entire part number.

Features

• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<45ns

• Operating Temperature . . . . . . . . . . . . . . . . . . . +175

o

• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . .600V

• Avalanche Energy Rated

• Planar Construction

Applications

• Switching Power Supplies

• Power Switching Circuits

• General Purpose

Package

JEDEC STYLE TO-218

ANODE

CATHODE

(FLANGE)

C

Absolute Maximum Ratings T

Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . V

Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . .V

DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Average Rectified Forward Current . . . . . . . . . . . . . . . I

(TC = +93oC)

Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . I

(Square Wave, 20kHz)

Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . I

(Halfwave, 1 Phase, 60Hz)

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .P

Avalanche Energy (L = 40mH). . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . .T

= +25oC, Unless Otherwise Specified

C

RRM

RWM

F(AV)

FSM

FSM

STG

AVL

, T

Symbol

K

A

RHRU5040 RHRU5050 RHRU5060 UNITS

400 500 600 V
400 500 600 V

R

D

J

400 500 600 V

50 50 50 A

100 100 100 A

500 500 500 A

150 150 150 W

40 40 40 mj

-65 to +175 -65 to +175 -65 to +175

o

C

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

RHRU5040, RHRU5050, RHRU5060

Electrical Specifications T

TEST

SYMBOL

V

F

IF = 50A, TC = +25oC - - 2.1 - - 2.1 - - 2.1 V

CONDITION

= +25oC, Unless Otherwise Specified

C

RHRU5040 RHRU5050 RHRU5060

IF = 50A, TC = +150oC - - 1.7 - - 1.7 - - 1.7 V

I

R

VR = 400V, TC = +25oC --500------µA
VR = 500V, TC = +25oC -----500---µA
VR = 600V, TC = +25oC --------500µA

I

R

VR = 400V, TC = +150oC --1.5------mA
VR = 500V, TC = +150oC -----1.5---mA
VR = 600V, TC = +150oC --------1.5mA

t

RR

IF = 1A, dIF/dt = 100A/µs - -45- -45- -45ns
IF = 50A, dIF/dt = 100A/µs - -50- -50- -50ns

t

A

t

B

Q

RR

C

R

θJC

IF = 50A, dIF/dt = 100A/µs - 25 - - 25 - - 25 - ns
IF = 50A, dIF/dt = 100A/µs - 20 - - 20 - - 20 - ns
IF = 50A, dIF/dt = 100A/µs - 65 - - 65 - - 65 - nC
VR = 10V, IF = 0A - 140 - - 140 - - 140 - pF

J

- - 1.0 - - 1.0 - - 1.0

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300µs, D = 2%).

I

= Instantaneous reverse current.

R

= Reverse recovery time (See Figure 2), summation of tA + tB.

t

RR

= Time to reach peak reverse current (See Figure 2).

t

A

t

= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).

B

= Thermal resistance junction to case.

R

θJC

= Controlled avalanche energy (See Figures 10 and 11).

E

AVL

pw = pulse width.

D = duty cycle.

UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX

o

C/W

V1 AMPLITUDE CONTROLS I
V2 AMPLITUDE CONTROLS dIF/dt

= SELF INDUCTANCE OF

L

1

R4+ L

LOOP

+V

1

0

t

2

t

1

0

-V

2

F

t

3

R

FIGURE 1. tRR TEST CIRCUIT

+V

3

≥ 5t

Q

L

LOOP

4

R

t

1

t2 > t
t3 > 0

L

R

4

1
4

RR

≤

DUT

A(MAX)

t

A(MIN)

10

dI

F

I

F

dt

0

V

RM

t

RR

t

A

t

B

0.25 I

RM

I

RM

V

R

R

1

Q

1

R

2

Q

3

3

C1

Q

2

-V

4

FIGURE 2. tRR WAVEFORMS AND DEFINITIONS

2

Typical Performance Curves

300

100

+100oC

10

+25oC+175oC

RHRU5040, RHRU5050, RHRU5060

3000
1000

100

10

1

+175oC

+100oC

, FORWARD CURRENT (A)

F

I

1

0

0.5

1

VF, FORWARD VOLTAGE (V)

1.5

2

2.5

FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD

VOLTAGE DROP

T

= +25oC

60

50

40

30

20

t, RECOVERY TIMES (ns)

10

0

1

t

RR

t

t

10

IF, FORWARD CURRENT (A)

C

A

B

, REVERSE CURRENT (µA)

R

0.1

I

0.01
0 600400300200

3

100 500

V

+25oC

, REVERSE VOLTAGE (V)

R

FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE

VOLTAGE

t

RR

t

A

t

B

TC = +100oC

50

150

125

100

75

50

t, RECOVERY TIMES (ns)

25

0

50

1

, FORWARD CURRENT (A)

I

F

10

FIGURE 5. TYPICAL tRR,tAAND tBCURVES vs FORWARD

CURRENT AT +25oC

t

RR

TC = +175oC

250

200

150

100

t, RECOVERY TIMES (ns)

50

0

1

t

A

t

B

I

, FORWARD CURRENT (A)

F

10

FIGURE 7. TYPICAL tRR,tAAND tBCURVES vs FORWARD

CURRENT AT +175oC

3

FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD

CURRENT AT +100oC

50

40

125

DC

150

175

SQ. WAVE

30

20

10

, AVERAGE FORWARD CURRENT (A)

F(AV)

I

0

50

25

50

75

T

, CASE TEMPERATURE (oC)

C

100

FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES

RHRU5040, RHRU5050, RHRU5060

Typical Performance Curves (Continued)

350

300

250

200

150

100

, JUNCTION CAPACITANCE (pF)

J

50

C

0

0 50 100 150 200

FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE

Test Circuit and Waveforms

= 1A

I

MAX

L = 40mH
R < 0.1Ω

E

= 1/2LI2 [V

AVL

Q

AND Q2 ARE 1000V MOSFETs

1

AVL

/(V

AVL

- VDD)]

Q

1

L

VR, REVERSE VOLTAGE (V)

R

+
V

DD

12V

130Ω

Q

2

130Ω

1MΩ

DUT

CURRENT
SENSE

V

AVL

I

L

IV

V

DD

I

L

-

12V

t

0

FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE

WAVEFORMS

t

1

t

2

t

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only.Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

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