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RHRU100120
100A, 1200V Hyperfast Diode
The RHRU100120 is a hyperfast diode with soft recovery
characteristics (t
rr
< 90ns). It has half the recovery time of
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other powerswitchingapplications.Itslow stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits reducing power loss
in the switching transistors.
Formerly developmental type TA49070.
Symbol
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .<90ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-218
Ordering Information
PART NUMBER PACKAGE BRAND
RHRU100120 TO-218 RHR100120
NOTE: When ordering, use the entire part number.
K
A
ANODE
CATHODE
(FLANGE)
Absolute Maximum Ratings T
C
= 25oC, Unless Otherwise Specified
RHRU100120 UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RRM
1200 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RWM
1200 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
1200 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
100 A
(TC = 62.5oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FRM
200 A
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FSM
1000 A
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
300 W
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AVL
50 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, TJ-65 to 175
o
C
Data Sheet January 2000 File Number 3145.3
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
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Electrical Specifications T
C
= 25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
IF = 100A - - 3.2 V
IF = 100A, TC = 150oC - - 2.6 V
I
R
VR = 1200V - - 250 µA
VR = 1200V, TC = 150oC- - 2mA
t
rr
IF = 1A, dIF/dt = 100A/µs- - 90ns
IF = 100A, dIF/dt = 100A/µs - - 100 ns
t
a
IF = 100A, dIF/dt = 100A/µs - 60 - ns
t
b
IF = 100A, dIF/dt = 100A/µs - 25 - ns
R
θJC
- - 0.5
o
C/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 6), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 6).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).
R
θJC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
1
500
100
10
0 0.5 1 1.5 2 2.5 3
3.5
4
4.5
25oC
100oC
175oC
I
F
, FORWARD CURRENT (A)
VR, REVERSE VOLTAGE (V)
0
200
400 600 800 1000 1200
1000
100
0.01
0.1
1
10
175oC
100oC
25oC
I
R
, REVERSE CURRENT (µA)
RHRU100120
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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
FIGURE 3. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE
Typical Performance Curves (Continued)
IF, FORWARD CURRENT (A)
t, RECOVERY TIMES (ns)
1
0
75
100
125
150
10
t
rr
t
a
t
b
50
25
100
TC = 25oC, dIF/dt = 100A/µs
100
20
0
25 50 75 100 150 175125
40
60
80
DC
T
C
, CASE TEMPERATURE (oC)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
SQ. WAVE
Test Circuits and Waveforms
FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
R
G
L
V
DD
IGBT
CURRENT
SENSE
DUT
V
GE
t
1
t
2
VGE AMPLITUDE AND
t
1 ANDt2
CONTROL I
F
RG CONTROL dIF/dt
+
-
dt
dI
F
I
F
t
rr
t
a
t
b
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
LR
V
DD
R < 0.1Ω
E
AVL
= 1/2LI2 [V
R(AVL)
/(V
R(AVL)
- VDD)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I
MAX
= 1.6A
L = 40mH
IV
t
0
t
1
t
2
I
L
V
AVL
t
I
L
RHRU100120
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