
RHRP8100
Data Sheet January 2000 File Number 3667.2
8A, 1000V Hyperfast Diode
The RHRP8100 is a hyperfast diode with soft recovery
characteristic (t
< 60ns). It has half the recovery time of
rr
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other powerswitchingapplications.Itslow stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49060.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRP8100 TO-220AC RHRP8100
NOTE: When ordering, use the entire part number.
Symbol
K
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .<55ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AC
ANODE
CATHODE
(FLANGE)
CATHODE
C
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(TC = 140oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 8 and 9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
= 25oC, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FRM
FSM
STG
AVL
, T
RHRP8100 UNITS
1000 V
1000 V
R
D
J
1000 V
8A
16 A
100 A
75 W
20 mJ
-65 to 175
o
C
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RHRP8100
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
IF = 8A - - 3.0 V
IF = 8A, TC = 150oC - - 2.5 V
I
R
VR = 1000V - - 100 µA
VR = 1000V, TC = 150oC - - 500 µA
t
rr
IF = 1A, dIF/dt = 100A/µs--55ns
IF = 8A, dIF/dt = 100A/µs--65ns
t
a
t
b
Q
RR
C
J
R
θJC
IF = 8A, dIF/dt = 100A/µs - 30 - ns
IF = 8A, dIF/dt = 100A/µs - 20 - ns
IF = 8A, dIF/dt = 100A/µs - 175 - nC
VR = 10V, IF = 0A - 30 - pF
- - 2.0
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse Recovery Charge.
CJ = Junction Capacitance.
R
= Thermal resistance junction to case.
θJC
pw = Pulse Width.
D = Duty Cycle.
o
C/W
Typical Performance Curves
40
10
1.5
25oC
2 2.5
3.5
3
4
, FORWARD CURRENT (A)
F
I
0.5
175oC
1
0.5
0
100oC
1
VF, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
, REVERSE CURRENT (µA)
0.01
R
I
0.001
500
100
0.1
175oC
10
1
0
200
V
R
100oC
25oC
400
, REVERSE VOLTAGE (V)
600
800
1000
2

Typical Performance Curves (Continued)
RHRP8100
60
TC = 25oC, dIF/dt = 200A/µs
50
40
30
20
t, RECOVERY TIMES (ns)
10
0
0.5
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
4
81
100
TC = 100oC, dIF/dt = 200A/µs
80
60
40
t, RECOVERY TIMES (ns)
20
0
0.5
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
FIGURE 3. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb curves vs FORWARD CURRENT
120
TC = 175oC, dIF/dt = 200A/µs
100
80
60
40
t, RECOVERY TIMES (ns)
20
0
0.5
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
814
10
8
6
SQ. WAVE
4
2
, AVERAGE FORWARD CURRENT (A)
F(AV)
0
I
100 115 145 175160
130
T
, CASE TEMPERATURE (oC)
C
DC
814
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
100
80
60
40
20
, JUNCTION CAPACITANCE (pF)
J
C
0 50 100 150 200
VR, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
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Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t
CONTROL I
1 ANDt2
V
GE
I
MAX
L = 40mH
R < 0.1Ω
E
AVL
Q
1
t
= 1A
= 1/2LI2 [V
= IGBT (BV
1
CES
F
R
G
t
2
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
/(V
R(AVL)
R(AVL)
- VDD)]
R(AVL)
> DUT V
L
DUT
IGBT
)
CURRENT
SENSE
LR
RHRP8100
+
V
DD
-
dI
F
I
F
dt
0
t
rr
t
a
V
AVL
t
b
0.25 I
RM
I
RM
CURRENT
Q
1
SENSE
DUT
+
V
DD
V
DD
-
IV
t
0
I
L
I
L
t
1
t
2
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
t
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