Datasheet RHRP1540, RHRP1560 Datasheet (Intersil)

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RHRP1540, RHRP1560
Data Sheet January 2000 File Number 3685.2
15A, 400V - 600V Hyperfast Diodes
The RHRP1540 and RHRP1560 are hyperfast diodes with soft recovery characteristics (t
< 35ns). They have half the
rr
recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switchingpower supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Formerly developmental type TA49061.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRP1540 TO-220AC RHRP1540 RHRP1560 TO-220AC RHRP1560
NOTE: When ordering, use the entire part number.
Symbol
K
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .<35ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AC
ANODE
CATHODE
CATHODE (FLANGE)
C
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(TC = 140oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
= 25oC, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FRM
FSM
STG
AVL
, T
RHRP1540 RHRP1560 UNITS
400 600 V 400 600 V
R
D
J
400 600 V
15 15 A
30 30 A
200 200 A
100 100 W
20 20 mJ
-65 to 175 -65 to 175
o
C
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RHRP1540, RHRP1560
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
RHRP1540 RHRP1560
SYMBOL TEST CONDITION
V
F
IF = 15A - - 2.1 - - 2.1 V IF = 15A, TC = 150oC - - 1.7 - - 1.7 V
I
R
VR = 400V - - 100 - - - µA VR = 600V - - - - - 100 µA VR = 400V, TC = 150oC - - 500 - - - µA VR = 600V, TC = 150oC -----500µA
t
rr
IF = 1A, dIF/dt = 100A/µs--35--35ns IF = 15A, dIF/dt = 100A/µs--40--40ns
t
a
t
b
Q
RR
C
J
R
θJC
IF = 15A, dIF/dt = 100A/µs - 20 - - 20 - ns IF = 15A, dIF/dt = 100A/µs - 15 - - 15 - ns IF = 15A, dIF/dt = 100A/µs - 40 - - 40 - nC VR = 10V, IF = 0A - 60 - - 60 - pF
- - 1.5 - - 1.5
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current . trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse Recovery Change.
CJ= Junction Capacitance.
R
= Thermal resistance junction to case.
θJC
pw = Pulse Width.
D = Duty Cycle.
UNITSMIN TYP MAX MIN TYP MAX
o
C/W
Typical Performance Curves
100
175oC
100oC
25oC
0.5
1
VF, FORWARD VOLTAGE (V)
, FORWARD VOLTAGE (V)
V
F
1.5
2 2.5
3
10
, FORWARD CURRENT (A)
F
I
1
0.5 0
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
1000
100
10
1
, REVERSE CURRENT (µA)
0.1
R
I
0.01 0 200 400 600300 500
100
VR, REVERSE VOLTAGE (V)
175oC
100oC
25oC
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RHRP1540, RHRP1560
Typical Performance Curves (Continued)
50
TC = 25oC, dIF/dt = 100A/µs
40
30
20
10
t, RECOVERY TIMES (ns)
0
0.5
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
5
10
151
100
TC = 100oC, dIF/dt = 100A/µs
80
60
40
t, RECOVERY TIMES (ns)
20
0
0.5
t
rr
t
a
t
b
1
, FORWARD CURRENT (A)
I
F
5
10
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
175
TC = 175oC, dIF/dt = 100A/µs
150
125
100
t
rr
15
DC
12
SQ. WAVE
9
15
75
50
t, RECOVERY TIMES (ns)
25
0
0.5
t
b
t
a
, FORWARD CURRENT (A)
I
F
151
5
10
6
3
, AVERAGE FORWARD CURRENT (A)
F(AV)
0
I
100
115
130
T
, CASE TEMPERATURE (oC)
C
145
160
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
175
150
125
100
75
50
, JUNCTION CAPACITANCE (pF)
25
J
C
0
0 50 100 150 200
VR, REVERSE VOLTAGE (V)
175
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
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Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t
CONTROL I
1 ANDt2
V
GE
I
MAX
L = 40mH R < 0.1 E
AVL
Q
1
t
= 1A
= 1/2LI2 [V
= IGBT (BV
1
R(AVL)
CES
F
R
t
2
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
/(V
R(AVL)
> DUT V
R(AVL)
L
DUT
G
IGBT
- VDD)] )
RHRP1540, RHRP1560
CURRENT
SENSE
LR
+
V
DD
-
dI
F
I
F
dt
0
t
rr
t
a
V
AVL
t
b
0.25 I
RM
I
RM
CURRENT
Q
1
SENSE
DUT
+ V
DD
V
DD
-
IV
t
0
I
L
I
L
t
1
t
2
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
t
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringementsof patents or other rightsof third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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