Datasheet RHRP15100 Datasheet (Intersil)

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RHRP15100
Data Sheet January 2000 File Number 3692.2
15A, 1000V Hyperfast Diode
The RHRP15100 is a hyperfast diode with soft recovery characteristics (t
< 60ns). It has half the recovery time of
rr
ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other powerswitchingapplications.Itslow stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.
Formerly developmental type TA49062.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRP15100 TO-220AC RHR15100
NOTE: When ordering, use the entire part number.
Symbol
K
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .<60ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AC
ANODE
CATHODE
CATHODE (FLANGE)
C
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(TC = 130oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
= 25oC, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FRM
FSM
STG
RHRP15100 UNITS
1000 V 1000 V 1000 V
15 A
30 A
200 A
100 W
20 mJ
-65 to 175
AVL
, T
R
D
J
o
C
1
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
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RHRP15100
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
IF = 15A - - 3.0 V IF = 15A, TC = 150oC - - 2.5 V
I
R
VR = 1000V - - 100 µA VR = 1000V, TC = 150oC - - 500 µA
t
rr
IF = 1A, dIF/dt = 100A/µs--60ns IF = 15A, dIF/dt = 100A/µs--70ns
t
a
t
b
Q
RR
C
J
R
θJC
IF = 15A, dIF/dt = 100A/µs - 40 - ns IF = 15A, dIF/dt = 100A/µs - 25 - ns IF = 15A, dIF/dt = 100A/µs - 160 - nC VR = 10V, IF = 0A - 66 - pF
- - 1.5
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current. trr = Reverse recovery time (Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction capacitance.
R
= Thermal resistance junction to case.
θJC
pw = pulse width.
D = duty cycle.
o
C/W
Typical Performance Curves
100
10
, FORWARD CURRENT (A)
F
I
1
0.5 01 5243
175oC
100oC
VF, FORWARD VOLTAGE (V)
25oC
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
1000
100
10
1
, REVERSE CURRENT (µA)
0.1
R
I
0.01 0 600400200
175oC
100oC
25oC
VR, REVERSE VOLTAGE (V)
1000800
2
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Typical Performance Curves (Continued)
RHRP15100
75
60
45
30
t, RECOVERY TIMES (ns)
15
0
0.5
TC = 25oC, dIF/dt = 100A/µs
t
rr
t
a
t
b
5
IF, FORWARD CURRENT (A)
15110
150
TC = 100oC, dIF/dt = 100A/µs
125
100
75
50
t, RECOVERY TIMES (ns)
25
0
0.5
t
rr
t
a
t
b
I
, FORWARD CURRENT (A)
F
FIGURE 3. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 4. trr,taAND tbCURVES vs FORWARD CURRENT
200
TC = 175oC, dIF/dt = 100A/µs
150
100
t
rr
t
a
t
b
15
12
DC
9
SQ. WAVE
6
151105
50
t, RECOVERY TIMES (ns)
0
0.5
151105
IF, FORWARD CURRENT (A)
3
, AVERAGE FORWARD CURRENT (A)
F(AV)
0
I
115 130 160100 175145
T
, CASE TEMPERATURE (oC)
C
FIGURE 5. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
300
250
200
150
100
, JUNCTION CAPACITANCE (pF)
50
J
C
0
0 50 100 150 200
VR, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
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Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t
CONTROL I
1 ANDt2
V
GE
I
MAX
L = 40mH R < 0.1 E
AVL
Q
1
t
= 1A
= 1/2LI2 [V
= IGBT (BV
1
R(AVL)
CES
F
R
t
2
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
/(V
R(AVL)
> DUT V
R(AVL)
L
DUT
G
IGBT
- VDD)] )
CURRENT
SENSE
LR
RHRP15100
+
V
DD
-
dI
F
I
F
dt
0
t
rr
t
a
V
AVL
t
b
0.25 I
RM
I
RM
CURRENT
Q
1
SENSE
DUT
+ V
DD
V
DD
-
IV
t
0
I
L
I
L
t
1
t
2
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
t
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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