Datasheet RHRG75100, RHRG7570, RHRG7580, RHRG7590 Datasheet (Intersil)

RHRG7570, RHRG7580, RHRG7590, RHRG75100

Data Sheet April 1995 File Number 3923.1

75A, 700V - 1000V Hyperfast Diodes

RHRG7570, RHRG7580, RHRG7590 and RHRG75100
(TA49068) are hyperfast diodes with soft recovery character­istics (t

< 85ns). They hav e half the recovery time of

RR

ultrafast diodes and are silicon nitride passivated ion­implanted epitaxial planar construction.

These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
and other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing and elec­trical noise in many power switching circuits reducing power
loss in the switching transistors.

Ordering Information

PACKAGING AVAILABILITY

PART NUMBER PACKAGE BRAND

RHRG7570 TO-247 RHRG7570
RHRG7580 TO-247 RHRG7580
RHRG7590 TO-247 RHRG7590
RHRG75100 TO-247 RHRG75100

NOTE: When ordering, use the entire part number.

Features

• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns

• Operating Temperature . . . . . . . . . . . . . . . . . . . +175

o

• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . .1000V

• Avalanche Energy Rated

• Planar Construction

Applications

• Switching Power Supplies

• Power Switching Circuits

• General Purpose

Package

JEDEC STYLE TO-247

ANODE

CATHODE
(BOTTOM

SIDE METAL)

CATHODE

C

Absolute Maximum Ratings T

Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . .V

Working Peak Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . V

DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . I

(TC = +52oC)

Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . .I

(Square Wave, 20kHz)

Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . .I

(Halfwave, 1 Phase, 60Hz)

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Avalanche Energy (L = 40mH) (See Figures 10 and 11). . . . E

Operating and Storage Temperature. . . . . . . . . . . . . . . . T

= +25oC, Unless Otherwise Specified

C

RRM

RWM

F(AV)

FSM

FSM

AVL

, TJ-65 to +175 -65 to +175 -65 to +175 -65 to +175

STG

Symbol

K

A

RHRG7570 RHRG7580 RHRG7590 RHRG75100 UNITS

700 800 900 1000 V
700 800 900 1000 V

R

D

700 800 900 1000 V

75 75 75 75 A

150 150 150 150 A

750 750 750 750 A

190 190 190 190 W

50 50 50 50 mj

o

C

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

RHRG7570, RHRG7580, RHRG7590, RHRG75100

Electrical Specifications T

= +25oC, Unless Otherwise Specified

C

RHRG7570 RHRG7580 RHRG7590 RHRG75100

SYMBOL TEST CONDITION

V

IF = 75A, TC = +25oC - - 3.0 - - 3.0 - - 3.0 - - 3.0 V

F

IF = 75A, TC = +150oC - - 2.5 - - 2.5 - - 2.5 - - 2.5 V

I

VR = 700V, TC = +25oC--500---------µA

R

VR = 800V, TC = +25oC-----500------µA
VR = 900V, TC = +25oC--------500---µA
VR = 1000V, TC = +25oC-----------500µA

I

VR = 700V, TC = +150oC--2.0---------mA

R

VR = 800V, TC = +150oC-----2.0------mA

= 900V, TC = +150oC--------2.0---mA

V

R

V

= 1000V, TC = +150oC-----------2.0mA

R

t

IF = 1A, dIF/dt = 100A/µs- -85- -85- -85- -85ns

RR

IF = 75A, dIF/dt = 100A/µs - - 100 - - 100 - - 100 - - 100 ns

t

IF = 75A, dIF/dt = 100A/µs - 55 - - 55 - - 55 - - 55 - ns

A

t

IF = 75A, dIF/dt = 100A/µs - 40 - - 40 - - 40 - - 40 - ns

B

Q

RRIF

C

J

R

θJC

= 75A, dIF/dt = 100A/µs - 240 - - 240 - - 240 - - 240 - nC

VR = 10V, IF = 0A - 220 - - 220 - - 220 - - 220 - pF

- - 0.8 - - 0.8 - - 0.8 - - 0.8oC/W

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300µs, D = 2%).

I

= Instantaneous reverse current.

R

= Reverse recovery time (Figure 2), summation of tA + tB.

t

RR

= Time to reach peak reverse current (See Figure 2).

t

A

t

= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).

B

= Reverse recovery charge.

Q

RR

= Junction capacitance.

C

J

R

= Thermal resistance junction to case.

θJC

= Controlled avalanche energy. (See Figures 10 and 11).

E

AVL

pw = pulse width.

D = duty cycle.

UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

V1 AMPLITUDE CONTROLS I
V2 AMPLITUDE CONTROLS dIF/dt

= SELF INDUCTANCE OF

L

1

R4+ L

LOOP

+V

1

0

t

2

t

1

0

-V

2

F

t

3

R

FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS

+V

3

≥ 5t

Q

L

LOOP

4

R

t

1

t2 > t
t3 > 0

L

R

4

1
4

RR

≤

DUT

A(MAX)

t

A(MIN)

10

dI

F

I

F

dt

0

V

RM

t

RR

t

A

t

B

0.25 I

RM

I

RM

V

R

R

1

Q

1

R

2

Q

3

3

C1

Q

2

-V

4

2

RHRG7570, RHRG7580, RHRG7590, RHRG75100

Typical Performance Curves

400

100

+100oC
+175oC

10

, FORWARD CURRENT (A)

F

I

1

0

1

+25oC

2

VF, FORWARD VOLTAGE (V)

1000

+175oC

100

10

1

, REVERSE CURRENT (µA)

0.1

R

I

0.01

3

4

5

0 200 400

VR, REVERSE VOLTAGE (V)

+100oC

+25oC

600

800

1000

FIGURE 3. TYPICAL FORWARDCURRENT vs FORWARD

VOLTAGE DROP

100

80

60

40

t, RECOVERY TIMES (ns)

20

0

1

t

RR

t

A

t

B

10

IF, FORWARD CURRENT (A)

TC = +25oC

FIGURE 5. TYPICAL tRR,tAAND tBCURVES vsFORWARD

CURRENT AT +25oC

500

400

300

t

RR

TC = +175oC

FIGURE 4.TYPICAL REVERSECURRENT vs REVERSE

VOLTAGE

300

250

200

150

100

t, RECOVERY TIMES (ns)

50

0

75

1

IF, FORWARD CURRENT (A)

t

RR

t

B

t

A

10

TC = +100oC

75

FIGURE 6. TYPICAL tRR,tAAND tBCURVES vsFORWARD

CURRENT AT +100oC

75

60

45

SQ. WAVE

DC

200

t, RECOVERY TIMES (ns)

100

0

1

I

, FORWARD CURRENT (A)

F

t

B

t

A

10

FIGURE 7. TYPICAL tRR,tAAND tBCURVES vsFORWARD

CURRENT AT +175oC

3

30

15

(AV), AVERAGE FORWARD CURRENT (A)

F

0

I

75

25

50

75

T

, CASE TEMPERATURE (oC)

C

100

125

150 175

FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES

RHRG7570, RHRG7580, RHRG7590, RHRG75100

Typical Performance Curves (Continued)

800

700

600

500

400

300

200

, JUNCTION CAPACITANCE (pF)

J

C

100

0

0

FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE

Test Circuit and Waveforms

= 1A

I

MAX

L = 40mH
R < 0.1Ω

E

= 1/2LI2 [V

AVL

Q

AND Q2 ARE 1000V MOSFETs

1

AVL

/(V

AVL

- VDD)]

Q

1

L

50

VR, REVERSE VOLTAGE (V)

R

+
V

DD

100

150

200

12V

130Ω

Q

2

130Ω

1MΩ

DUT

CURRENT
SENSE

V

AVL

I

L

IV

V

DD

I

L

-

12V

FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-

t

0

t

1

t

2

t

FORMS

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Intersil semiconductorproducts are sold by descriptiononly. Intersil Corporation reservesthe right to make changesin circuit design and/or specificationsat any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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