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RHRG5060
Data Sheet January 2000
50A, 600V Hyperfast Diode
The RHRG5060 is a hyperfast diode with soft recovery
characteristics (t
< 45ns). It has half the recovery time of
rr
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other powerswitchingapplications.Itslow stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49065.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRG5060 TO-247 RHRG5060
NOTE: When ordering, use the entire part number.
Symbol
K
File Number 3920.2
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .<45ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-247
ANODE
CATHODE
(BOTTOM
SIDE METAL)
CATHODE
C
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(TC = 93oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
= 25oC, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FRM
FSM
STG
AVL
, T
RHRG5060 UNITS
600 V
600 V
R
D
J
600 V
50 A
100 A
500 A
150 W
40 mJ
-65 to 175
o
C
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1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
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RHRG5060
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
IF = 50A - - 2.1 V
IF = 50A, TC = 150oC - - 1.7 V
I
R
VR = 600V - - 250 µA
VR = 600V, TC = 150oC - - 1.5 mA
t
rr
IF = 1A, dIF/dt = 100A/µs--45ns
IF = 50A, dIF/dt = 100A/µs--50ns
t
a
t
b
Q
RR
C
J
R
θJC
IF = 50A, dIF/dt = 100A/µs - 25 - ns
IF = 50A, dIF/dt = 100A/µs - 20 - ns
IF = 50A, dIF/dt = 100A/µs - 65 - nC
VR = 10V, IF = 0A - 140 - pF
- - 1.0
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
R
= Thermal resistance junction to case.
θJC
pw = pulse width.
D = Duty cycle.
o
C/W
Typical Performance Curves
300
100
10
, FORWARD CURRENT (A)
F
I
1
175oC
0 0.5 2.5121.5
100oC
VF, FORWARD VOLTAGE (V)
25oC
3
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
3000
1000
100
10
1
, REVERSE CURRENT (µA)
0.1
R
I
0.01
0 600400300200
100 500
175oC
100oC
25oC
, REVERSE VOLTAGE (V)
V
R
2
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Typical Performance Curves (Continued)
RHRG5060
60
50
40
30
20
t, RECOVERY TIMES (ns)
10
0
1
TC = 25oC, dIF/dt = 100A/µs
t
rr
t
a
t
b
10
IF, FORWARD CURRENT (A)
50
150
TC = 100oC, dIF/dt = 100A/µs
125
100
75
50
t, RECOVERY TIMES (ns)
25
0
1
t
rr
t
a
t
b
10
IF, FORWARD CURRENT (A)
FIGURE 3. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 4. trr,taAND tbCURVES vs FORWARD CURRENT
250
TC = 175oC, dIF/dt = 100A/µs
200
150
t
rr
50
40
SQ. WAVE
30
DC
50
100
t, RECOVERY TIMES (ns)
50
0
1
t
a
t
b
IF, FORWARD CURRENT (A)
10
50
20
10
, AVERAGE FORWARD CURRENT (A)
F(AV)
I
0
25
50
75
, CASE TEMPERATURE (oC)
T
C
100
125
FIGURE 5. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
350
300
250
200
150
100
, JUNCTION CAPACITANCE (pF)
J
50
C
0
0 50 100 150 200
VR, REVERSE VOLTAGE (V)
150
175
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
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Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t
V
GE
I
MAX
L = 40mH
R < 0.1Ω
E
Q
1 ANDt2
= 1.4A
= 1/2LI2 [V
AVL
= IGBT (BV
1
CONTROL I
t
1
R(AVL)
CES
F
R
t
2
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
/(V
R(AVL)
> DUT V
R(AVL)
L
DUT
G
IGBT
- VDD)]
)
CURRENT
SENSE
LR
RHRG5060
+
V
DD
-
dI
F
I
F
dt
0
t
rr
t
a
V
AVL
t
b
0.25 I
RM
I
RM
CURRENT
Q
1
SENSE
DUT
+
V
DD
V
DD
-
IV
t
0
I
L
I
L
t
1
t
2
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
t
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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