Page 1
Data Sheet January 2002
RHRG30120
30A, 1200V Hyperfast Diode
The RHRG30120 is a hyperfast diode with soft recovery
characteristics (t
< 65ns). It has half the recovery time of
rr
ultrafastdiodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of high f requency switching
power supplies and other power s witching applications. Its
low stored charge and hyperfast soft recovery minimize
ringing and electricalnoise in many power switching circuits,
thus reducing power loss in the switching transistors.
Formerly developmental t ype TA49041.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRG30120 TO-247 RHRG30120
NOTE: When ordering, use the entire part number.
Symbol
K
Features
• HyperfastwithSoftRecovery..................<65ns
• OperatingTemperature......................175
o
C
• ReverseVoltage............................1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-247
ANODE
CATHODE
CATHODE
(BOTTOM SIDE
METAL)
A
Absolute Maxim um Rating s T
PeakRepetitiveReverseVoltage ...........................................................V
WorkingPeakReverseVoltage............................................................V
DCBlockingVoltage .......................................................................V
AverageRectifiedForwardCurrent..........................................................I
=78oC)
(T
C
RepetitivePeakSurgeCurrent .............................................................I
(Square Wave, 20kHz)
NonrepetitivePeakSurgeCurrent........................................................... I
(Halfwave, 1 Phase, 60Hz)
MaximumPowerDissipation.................................................................P
AvalancheEnergy(SeeFigures7and8).....................................................E
OperatingandStorageTemperature......................................................T
=25oC
C
RRM
RWM
F(AV)
FRM
FSM
AVL
STG,TJ
RHRG30120 UNITS
1200 V
1200 V
R
D
1200 V
30 A
60 A
300 A
125 W
30 mJ
-65 to 175
o
C
©2002 Fairchild SemiconductorCorporation RHRG30120 Rev. C
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RHRG30120
Electrical Specifications T
=25oC, Unless Oth erwis e Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
I
R
t
rr
t
a
t
b
R
θJC
IF= 30A - - 3.2 V
I
=30A,TC=150oC--2.6V
F
VR= 1200V - - 250 µA
V
= 1200V, TC=150oC- - 1mA
R
IF=1A,dIF/dt = 100A/µs- -65ns
I
=30A,dIF/dt = 100A/µs- - 85 ns
F
IF=30A,dIF/dt = 100A/µs- 48 - ns
IF=30A,dIF/dt = 100A/µs- 22 - ns
--1.2oC/W
DEFINITIONS
= Instantaneousforwardvoltage (pw = 300µs, D = 2%).
V
F
= Instantaneous reverse current.
I
R
= Reverse recovery time (See Figure6), summation of ta+tb.
t
rr
= Time to reach peak reverse current (See Figure 6).
t
a
=TimefrompeakIRMto projected zero crossing of IRMbasedonastraightlinefrompeakIRMthrough25% of IRM(See Figure 6).
t
b
= Thermal resistance junction to case.
R
θJC
pw = pulse width.
D = duty cycle.
Typical Performance Curves
200
100
10
, FORWARD CURRENT (A)
F
I
1
0
175oC
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
, FORWARD VOLTAGE (V)
V
F
100oC
25oC
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CUR RENT vs REVERSE VOLTAGE
500
100
10
1.0
0.1
, REVERSE CURRENT (µA)
R
I
0.01
0.001
0 200 400 600 800 1000 1200
, REVERSE VOLTAGE (V)
V
R
175oC
100oC
25oC
©2002 Fairchild S emiconductor Corporation RHRG30120 Rev. C
Page 3
Typical Performance Curves (Continued)
RHRG30120
100
75
t
rr
50
t, TIME (ns)
25
0
1
IF, FORWARD CURRENT (A)
t
a
t
b
10 30
40
30
DC
20
10
, AVERAGE FORWARD CURRENT (A)
F(AV)
I
0
25 50 75 100 125 150 175
SQ. WAVE
T
, CASE TEMPERATURE (oC)
C
FIGURE 3. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveform s
VGEAMPLITUDE AND
RGCONTROL dIF/dt
t
CONTROL I
1 ANDt2
V
GE
t
1
F
R
t
2
L
DUT
CURRENT
G
IGBT
SENSE
+
V
DD
-
0
dI
F
I
F
dt
t
rr
t
a
t
b
0.25I
I
RM
RM
FIGURE 5. trrTEST CIRCUIT FIGURE 6. trrWAVEFORMS AND DEFINITIONS
I
= 1.225A
MAX
L=40mH
R<0.1Ω
E
=1/2LI2[V
AVL
=IGBT(BV
Q
1
R(AVL)
CES
/(V
> DUT V
Q
R(AVL)-VDD
)
R(AVL)
1
)]
CURRENT
SENSE
DUT
LR
+
V
-
V
AVL
I
DD
V
DD
IV
t
0
L
I
L
t
1
t
2
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
t
©2002 Fairchild S emiconductor Corporation RHRG30120 Rev. C
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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