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RHRG30100
Data Sheet January 2000
30A, 1000V Hyperfast Diode
The RHRG30100 is a hyperfast diode with soft recovery
characteristics (t
< 65ns). It has half the recovery time of
rr
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other powerswitchingapplications.Itslow stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49064.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRG30100 TO-247 RHRG30100
NOTE: When ordering, use the entire part number.
File Number 3941.2
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .<65ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-247
ANODE
C
Symbol
K
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(TC = 95oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
= 25oC, Unless Otherwise Specified
C
CATHODE
(BOTTOM
SIDE METAL)
RRM
RWM
F(AV)
FRM
FSM
AVL
, TJ-65 to 175
STG
CATHODE
RHRG30100 UNITS
1000 V
1000 V
1000 V
R
30 A
70 A
325 A
125 W
D
20 mJ
o
C
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1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
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RHRG30100
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
IF = 30A - - 3.0 V
IF = 30A, TC = 150oC - - 2.5 V
I
R
VR = 1000V - - 250 µA
VR = 1000V, TC = 150oC - - 1.0 mA
t
rr
IF = 1A, dIF/dt = 100A/µs--65ns
IF = 30A, dIF/dt = 100A/µs--75ns
t
a
t
b
Q
RR
C
J
R
θJC
IF = 30A, dIF/dt = 100A/µs - 35 - ns
IF = 30A, dIF/dt = 100A/µs - 33 - ns
IF = 30A, dIF/dt = 100A/µs - 200 - nC
VR = 10V, IF = 0A - 100 - pF
- - 1.2
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
R
= Thermal resistance junction to case.
θJC
pw = Pulse width.
D = Duty cycle.
o
C/W
Typical Performance Curves
300
100
100oC
o
25
175oC
10
, FORWARD CURRENT (A)
F
I
1
01 5243
VF, FORWARD VOLTAGE (V)
C
6
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
1200
100
10
1
, REVERSE CURRENT (µA)
R
I
0.1
0.03
0 600400200
175oC
100oC
25oC
, REVERSE VOLTAGE (V)
V
R
1000800
2
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Typical Performance Curves (Continued)
RHRG30100
80
70
60
50
40
30
20
t, RECOVERY TIMES (ns)
10
0
TC = 25oC, dIF/dt = 100A/µs
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
30110
200
175
150
125
100
75
50
t, RECOVERY TIMES (ns)
25
0
TC = 100oC, dIF/dt = 100A/µs
t
rr
t
b
t
a
I
, FORWARD CURRENT (A)
F
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
300
250
200
150
TC = 175oC, dIF/dt = 100A/µs
t
rr
30
25
DC
20
SQ. WAVE
15
30110
100
t, RECOVERY TIMES (ns)
50
0
t
b
t
a
I
, FORWARD CURRENT (A)
F
10
301
10
5
, AVERAGE FORWARD CURRENT (A)
F(AV)
0
I
25 150100 175125
50 75
, CASE TEMPERATURE (oC)
T
C
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
250
200
150
100
50
, JUNCTION CAPACITANCE (pF)
J
C
0
0 50 100 150 200
VR, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
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Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t
V
GE
I
MAX
L = 40mH
R < 0.1Ω
E
Q
1 ANDt2
= 1A
= 1/2LI2 [V
AVL
= IGBT (BV
1
CONTROL I
t
1
R(AVL)
CES
F
R
t
2
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
/(V
R(AVL)
> DUT V
R(AVL)
L
DUT
G
IGBT
- VDD)]
)
CURRENT
SENSE
LR
RHRG30100
+
V
DD
-
dI
F
I
F
dt
0
t
rr
t
a
V
AVL
t
b
0.25 I
RM
I
RM
CURRENT
Q
1
SENSE
DUT
+
V
DD
V
DD
-
IV
t
0
I
L
I
L
t
1
t
2
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
t
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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