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RHRG15100CC
15A, 1000V Hyperfast Dual Diode
The RHRG15100CC is a hyperfast dual diode with soft
recovery characteristics (t
rr
< 60ns). It has half the recovery
time of ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other powerswitchingapplications.Itslow stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49062.
Symbol
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . < 60ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
RHRG15100CC TO-247 RHR15100C
NOTE: When ordering, use the entire part number.
K
A
1
A
2
(BOTTOM
SIDE METAL)
ANODE 2
CATHODE
CATHODE
ANODE 1
Absolute Maximum Ratings (Per Leg) T
C
= 25oC, Unless Otherwise Specified
RHRG15100CC UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
1000 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
1000 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
1000 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
(TC = 130oC)
15 A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
30 A
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 phase, 60Hz)
200 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
100 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
20 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to 175
o
C
Data Sheet January 2000 File Number 3693.2
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
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Electrical Specifications (Per Leg) T
C
= 25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
IF = 15A - - 3.0 V
IF = 15A, TC = 150oC - - 2.5 V
I
R
VR = 1000V - - 100 µA
VR = 1000V, TC = 150oC - - 500 µA
t
rr
IF = 1A, dIF/dt = 100A/µs--60ns
IF = 15A, dIF/dt = 100A/µs--70ns
t
a
IF = 15A, dIF/dt = 100A/µs - 40 - ns
t
b
IF = 15A, dIF/dt = 100A/µs - 25 - ns
Q
RR
IF = 15A, dIF/dt = 100A/µs - 160 - nC
C
J
VR = 10V, IF = 0A - 66 - pF
R
θJC
- - 1.5
o
C/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
R
θJC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
1
100
0.5
10
01 5243
I
F
, FORWARD CURRENT (A)
25oC
175oC
100oC
0 600400200
100
0.01
0.1
1
10
1000
1000800
I
R
, REVERSE CURRENT (µA)
VR, REVERSE VOLTAGE (V)
25oC
100oC
175oC
RHRG15100CC
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FIGURE 3. trr,taAND tbCURVES vs FORWARD CURRENT
FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves (Continued)
IF, FORWARD CURRENT (A)
0
60
75
0.5
45
30
15
t, RECOVERY TIMES (ns)
15110
t
b
5
t
rr
t
a
TC = 25oC, dIF/dt = 100A/µs
IF, FORWARD CURRENT (A)
0
100
125
0.5
75
50
25
t, RECOVERY TIMES (ns)
15110
t
b
5
t
rr
150
t
a
TC = 100oC, dIF/dt = 100A/µs
I
F
, FORWARD CURRENT (A)
0
100
150
0.5
50
t, RECOVERY TIMES (ns)
151105
t
rr
200
t
a
t
b
TC = 175oC, dIF/dt = 100A/µs
15
3
0
115 130 160100 175145
6
9
12
DC
T
C
, CASE TEMPERATURE (oC)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
SQ. WAVE
VR, REVERSE VOLTAGE (V)
50
300
0
100
0 50 100 150 200
200
150
C
J
, JUNCTION CAPACITANCE (pF)
250
RHRG15100CC
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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Test Circuits and Waveforms
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHECURRENT AND VOLTAGE
WAVEFORMS
R
G
L
V
DD
IGBT
CURRENT
SENSE
DUT
V
GE
t
1
t
2
VGE AMPLITUDE AND
t
1 ANDt2
CONTROL I
F
RG CONTROL dIF/dt
+
-
dt
dI
F
I
F
t
rr
t
a
t
b
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
LR
V
DD
R < 0.1Ω
E
AVL
= 1/2LI2 [V
R(AVL)
/(V
R(AVL)
- VDD)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I
MAX
= 1A
L = 40mH
IV
t
0
t
1
t
2
I
L
V
AVL
t
I
L
RHRG15100CC
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