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ANODE
CATHODE
CATHODE
(FLANGE)
ANODE
CATHODE
CATHODE
(FLANGE)
RHRD660, RHRD660S
Data Sheet January 2002
6A, 600V Hyperfast Diodes
The RHRD660 and RHRD660S are hyperfast diodes with
soft recovery characteristics (t
< 30ns). They have half the
rr
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49057.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRD660 TO-251 RHR660
RHRD660S TO-252 RHR660
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in tape and reel, e.g. RHRD660S9A.
Symbol
K
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-251
JEDEC STYLE TO-252
C
A
o
T
= 25
Absolute Maximum Ratings
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(T
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
= 152
C
o
C)
C, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FRM
FSM
STG
PKG
RHRD660, RHRD660S UNITS
600 V
600 V
600 V
6A
12 A
60 A
50 W
10 mJ
-65 to 175
300
260
AVL
, T
R
D
J
L
o
C
o
C
o
C
©2002 Fairchild Semiconductor Corporation RHRD660, RHRD660S Rev. B
Page 3
0 600400300200
100
0.01
0.1
1
10
1000
100 500
100oC
175oC
25oC
V
R
, REVERSE VOLTAGE (V)
I
R
, REVERSE CURRENT (µA)
µ
µ
θ
θ
RHRD660, RHRD660S
Electrical Specifications
T
o
= 25
C, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
I
R
t
rr
t
a
t
b
Q
RR
C
J
R
JC
I
= 6A - - 2.1 V
F
I
= 6A, T
F
V
R
V
R
I
= 1A, dI
F
I
= 6A, dI
F
I
= 6A, dI
F
I
= 6A, dI
F
I
= 6A, dI
F
V
R
= 150
C
= 600V - - 100
= 600V, T
= 10V, I
= 150
C
/dt = 200A/ µ s- - 30 ns
F
/dt = 200A/ µ s- - 35 ns
F
/dt = 200A/ µ s - 16 - ns
F
/dt = 200A/ µ s - 8.5 - ns
F
/dt = 200A/ µ s - 45 - nC
F
= 0A - 20 - pF
F
DEFINITIONS
V
= Instantaneous forward voltage (pw = 300 µ s, D = 2%).
F
I
= Instantaneous reverse current.
R
t
= Reverse recovery time (See Figure 9), summation of t
rr
t
= Time to reach peak reverse current (See Figure 9).
a
t
= Time from peak I
b
Q
= Reverse recovery charge.
RR
C
= Junction capacitance.
J
R
= Thermal resistance junction to case.
JC
to projected zero crossing of I
RM
pw = Pulse width.
D = Duty cycle.
o
C - - 1.7 V
o
C - - 500
--3
+ t
.
a
b
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
RM
o
A
A
C/W
Typical Performance Curves
©2002 Fairchild Semiconductor Corporation RHRD660, RHRD660S Rev. B
30
10
, FORWARD CURRENT (A)
F
I
1
0.5
175oC
0 0.5 2.5121.5
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE
100oC
VF, FORWARD VOLTAGE (V)
25oC
3
Page 4
5
1
0
155 160 170150 175165
2
3
4
DC
T
C
, CASE TEMPERATURE (oC)
SQ. WAVE
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
6
140 145
RHRD660, RHRD660S
Typical Performance Curves
30
25
20
15
10
t, RECOVERY TIMES (ns)
5
0
FIGURE 3. t
75
60
45
rr
t
a
160.5
IF, FORWARD CURRENT (A)
, t
AND t
a
CURVES vs FORWARD CURRENT FIGURE 4. t
b
TC = 25oC, dIF/dt = 200A/µs
t
rr
t
b
TC = 175oC, dIF/dt = 200A/µs
t
rr
(Continued)
50
TC = 100oC, dIF/dt = 200A/µs
40
30
20
t, RECOVERY TIMES (ns)
10
0
, t
rr
a
t
rr
t
a
t
b
160.5
IF, FORWARD CURRENT (A)
AND t
CURVES vs FORWARD CURRENT
b
30
t, RECOVERY TIMES (ns)
15
0
FIGURE 5. t
, t
rr
t
a
t
b
160.5
IF, FORWARD CURRENT (A)
AND t
a
CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
b
50
40
30
20
10
, JUNCTION CAPACITANCE (pF)
J
C
0
0 50 100 150 200
VR, REVERSE VOLTAGE (V)
©2002 Fairchild Semiconductor Corporation RHRD660, RHRD660S Rev. B
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Page 5
Test Circuits and Waveforms
dt
dI
F
I
F
t
rr
t
a
t
b
0
I
RM
0.25 I
RM
IV
t
0
t
1
t
2
I
L
V
AVL
t
I
L
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t
V
GE
1 AND t2
CONTROL I
t
1
F
RG
t
2
L
DUT
IGBT
RHRD660, RHRD660S
CURRENT
SENSE
+
V
DD
-
I
= 1A
MAX
L = 20mH
R < 0.1Ω
E
= 1/2LI2 [V
AVL
= IGBT (BV
Q
1
FIGURE 8. t
R(AVL)
> DUT V
CES
/(V
Q
R(AVL)
1
TEST CIRCUIT FIGURE 9. t
rr
- VDD)]
)
R(AVL)
CURRENT
SENSE
DUT
LR
+
V
DD
V
DD
-
WAVEFORMS AND DEFINITIONS
rr
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
©2002 Fairchild Semiconductor Corporation RHRD660, RHRD660S Rev. B
Page 6
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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