Datasheet RFM15N12, RFM15N15, RFP15N15 Datasheet (Intersil)

RFP15N15

October 1998 File Number 1443.2Data Sheet

15A, 150V, 0.150 Ohm, N-Channel Power
MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA09195.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP15N15 TO-220AB RFP15N15

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-220AB

Features

• 15A, 150V

•r

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.150Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

S

DRAIN

(TAB)

SOURCE

DRAIN

GATE

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFP15N15

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP15N15 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

D

DM

GS

D

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

150 V
150 V

15
40

±20 V

75

0.6

-55 to 150

300
260

A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Drain to Source On Voltage (Note 2) V
Input Capacitance C

DSSID

GS(TH)VGS

DSS

GSS

DS(ON)ID

ISS

= 250µA, VGS = 0V 150 - - V

= VDS, ID = 250µA2-4V
VDS = Rated BV
VDS= 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

DSS,VGS

= 0V, TC= 125oC25µA

VGS = ±20V, VDS = 0V - - ±100 nA

= 15A, VGS = 10V (Figures 6, 7) - - 0.150 Ω
= 15A, VGS = 10V - - 2.25 V

VDS = 25V, VGS = 0V, f = 1MHz

- - 1700 pF

(Figure 9)

Output Capacitance C
Reverse-Transfer Capacitance C
Turn-On Delay Time t

OSS

RSS

d(ON)

VDD = 75V, I

≈ 7.5A, R

D

= 50Ω, VGS = 10V

G

- - 750 pF

- - 350 pF

-5075ns

RL = 9.9Ω,

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t

(Figures 10, 11, 12)

r

f

- 150 225 ns

- 185 280 ns

- 125 190 ns

Thermal Resistance Junction-to-Case - - 1.67oC/W

Source to Drain Diode Specifications

PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V

SD

Reverse Recovery Time t

NOTES:

2. Pulse test: width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

2

ISD = 7.5A - - 1.4 V
ISD = 4A, dISD/dt = 100A/µs - 200 - ns

rr

RFP15N15

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

100

TC = 25oC
CURVE MUST BE DERATED LINEARLY WITH INCREASE
IN TEMPERATURE

16

14

12

10

8

6

, DRAIN CURRENT (A)

4

D

I

2

0

25 50 75 100 125

, CASE TEMPERATURE (oC)

T

C

FIGURE 2. MAXIMUM CONTINUOUSDRAIN CURRENTvs

CASE TEMPERATURE

30

PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

= 25oC

T

C

10V

8V

150

7V

10

OPERATION IN THIS
AREA MAY BE LIMITED
BY r

DS(ON)

1

, DRAIN CURRENT (A)

D

I

0.1
1 10 1000100

, DRAIN TO SOURCE (V)

V

DS

20

VGS = 20V

10

, DRAIN CURRENT (A)

D

I

0

0 1234567

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

40

VDS = 10V
PULSE DURATION = 80µs

35

DUTY CYCLE ≤ 2%

30

25

20

15

10

, DRAIN TO SOURCE CURRENT (A)

5

DS(ON)

I

0

012345678910

TC = 125oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

TC = -40oC

TC = -40oC

TC = 25oC

TC = 125oC

0.30

0.25

0.20

0.15

, DRAIN TO SOURCE

0.10

ON RESISTANCE (Ω)

DS(ON)

0.05

r

VGS = 10V
PULSE DURATION = 80µs

DUTY CYCLE ≤ 2%

CASE TEMPERATURE

0

0 5 10 15 20 25 30 35

I

, DRAIN CURRENT (A)

D

3.6V

TC = 125oC

TC = 25oC

TC = -40oC

6V

5V

4V

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN

CURRENT

3

RFP15N15

Typical Performance Curves

2.0
VGS = 10V

ID = 15A
PULSE DURATION = 80µs

1.5

1.0

ON RESISTANCE

0.5

, NORMALIZED DRAIN TO SOURCE

DS(ON)

r

0

-50 0 50 100 150 200
T

, JUNCTION TEMPERATURE (oC)

J

Unless Otherwise Specified (Continued)

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1600

1400

1200

1000

800

600

C, CAPACITANCE (pF)

400

200

0

01020304050

V

VGS = 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS

C

OSS

, DRAIN TO SOURCE VOLTAGE (V)

DS

GD

≈ CDS + C

GD

GD

C

C

C

ISS

OSS

RSS

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

1.4
VGS = V

DS

ID = 250µA

1.2

1

NORMALIZED GATE

0.8

THRESHOLD VOLTAGE

0.6

-50 0 50 100 150 200
, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

150

GATE

112.5

75

37.5

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

VDD = BV

I

G(REF)

20

I

G(ACT)

SOURCE

DSS

VOLTAGE

RL = 10Ω

I

G(REF)

V

= 10V

GS

0.75BV

0.50BV

0.25BV

DRAIN SOURCE VOLTAGE

t, TIME (µs)

VDD = BV

= 1mA

DSS
DSS
DSS

80

DSS

I

G(REF)

I

G(ACT)

NOTE: Refer toIntersil Application Notes AN7254 and AN7260.

FIGURE 10. NORMALIZED SWITCHINGWAVEFORMS FOR

CONSTANT GATE CURRENT

10

8

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

Test Circuits and Waveforms

R

G

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

4

t

ON

t

d(ON)

t

R

L

+

V

DD

-

DUT

V

DS

0

V

GS

0

90%

10%

r

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

RFP15N15

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