Datasheet RFM12N35, RFM12N40 Datasheet (Intersil)

Semiconductor

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j

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September 1998

RFM12N35,

RFM12N40

12A, 350V and 400V, 0.500 Ohm,

N-Channel Power MOSFETs

[ /Title
(RFM12
N35,
RFM12
N40)

Sub-

ect
(12A,
350V
and
400V,

0.500
Ohm,
N-Chan­nel
Power
MOS­FETs)

Author
()

Key­words
(12A,
350V
and
400V,

0.500
Ohm,
N-Chan­nel
Power
MOS­FETs)

Cre­ator ()

DOCIN

Features

• 12A, 350V and 400V

DS(ON)

= 0.500Ω

•r

Ordering Information

PART NUMBER PACKAGE BRAND

RFM12N35 TO-204AA RFM12N35
RFM12N40 TO-204AA RFM12N40

NOTE: When ordering, use the entire part number.

Packaging

DRAIN
(FLANGE)

GATE (PIN 1)

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.

Formerly developmental type TA17434.

Symbol

D

G

S

JEDEC TO-204AA

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

5-1

File Number 1787.1

RFM12N35, RFM12N40

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFM12N35 RFM12N40 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D

DM

GS

D

350 400 V
350 400 V

12 12 A

24 24 A
±20 ±20 V
150 150 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 1.2 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

260 260

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250mA, VGS = 0V

RFM12N35 350 - - V

RFM12N40 400 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

GS(TH)VGS

DSS

= VDS, ID = 250µA, (Figure 8) 2 - 4 V

VDS = Rated BV

DSS,VGS

VDS = 0.8 x Rated BV

= 0 - - 1 µA

DSS, VGS

= 0,

--25µA

TC = 125oC
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V

GSS

DS(ON)ID

DS(ON)ID

VGS = ±20V, VDS = 0V - - ±100 nA

= 12A, VGS = 10V, (Figures 6, 7) - - 0.500 Ω
= 6A, VGS = 10V - - 3 V

ID = 12A, VGS = 10V - - 6.0 V
Turn-On Delay Time t

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R

r

f

ISS
OSS
RSS

θJC

≈ 6A, V

= 200V, RG = 50Ω,

DS

VGS = 10V, RL = 33Ω,
(Figures 10, 11, 12)

VGS = 0V, VDS = 25V, f = 1MHz
(Figures 9)

-3050ns

- 105 150 ns

- 480 750 ns

- 140 200 ns

- - 3000 pF

- - 900 pF

- - 400 pF

- - 0.83

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V

SD

Diode Reverse Recovery Time t

NOTE:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

ISD = 6A - - 1.4 V
ISD = 4A, dISD/dt = 100A/µs - 950 - ns

rr

5-2

RFM12N35, RFM12N40

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

100

TC = 25oC

ID (MAX)
CONTINUOUS

10

DC OPERATION

OPERATION IN THIS AREA
MAY BE LIMITED BY r

1

, DRAIN CURRENT (A)

D

I

0.1
VDS, DRAIN TO SOURCE VOLTAGE (V)

101

DS(ON)

V

(MAX) = 350V

DSS

RFM12N35

(MAX) = 400V

V

DSS

RFM12N40

100

1000

14

12

10

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (oC)

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

25

PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

0246 810121416

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

VGS = 20V
V

= 8-10V

GS

V

= 7V

GS

V

= 6V

GS

VGS = 5V

VGS = 4V

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

30

VDS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

20

10

TC = 125oC

, DRAIN TO SOURCE CURRENT (A)

D(ON)

I

0

0123456

V

, GATE TO SOURCE VOLTAGE (V)

GS

TC = 25oC

TC = -40oC

0.8

0.7
TC = 125oC

0.6

0.5

0.4

DRAIN TO SOURCE

0.3

ON RESISTANCE (Ω)

0.2

DS(ON),

r

0.1

0

010203040

TC = 25oC

TC = -40oC

, DRAIN CURRENT (A)

I

D

VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN

CURRENT

5-3

RFM12N35, RFM12N40

Typical Performance Curves

4

ID = 12A
V

= 10V

GS

Unless Otherwise Specified (Continued)

3

2

ON RESISTANCE

1

NORMALIZED DRAIN TO SOURCE

0

-50 0 50 100 150
, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

4000

3000

C

2000

C, CAPACITANCE (pF)

1000

ISS

C

C

0

0 1020304050

V

DS

RSS

, DRAIN TO SOURCE VOLTAGE (V)

OSS

VGS = 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS
OSS

GD

≈ CDS + C

C

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

GD

GS

2

ID = 250µA
V

= V

GS

DS

1.5

1

0.5

NORMALIZED GATE THRESHOLD VOLTAGE

0

-50 0 50 100 150
, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 8. NORMALIZED GATE THRESHOLD VOLTA GE vs

JUNCTION TEMPERATURE

400

I

G(REF)

0.75BV

0.50BV

0.25BV

t, TIME (µs)

GATE

SOURCE

VOLTAGE

RL = 33.3Ω

= 2.5mA

V

= 10V

GS

0.75BV

DSS

0.50BV

DSS

0.25BV

DSS

VDD = BV

DSS
DSS
DSS

80

DSS

I

G(REF)

I

G(ACT)

300

200

100

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

VDD = BV

I

G(REF)

20

I

G(ACT)

DSS

DRAIN SOURCE VOLTAGE

NOTE: Refer to Harris Application Notes AN7254 and 7260.

FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

10

8

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

Test Circuits and Waveforms

R

G

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

t

ON

t

d(ON)

t

R

L

+

V

DD

-

V

DS

90%

0

r

10%

DUT

V

GS

10%

0

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

5-4