Page 1
RFL2N06L
Data Sheet October 1999
2A, 60V, 0.950 Ohm, Logic Level,
N-Channel Power MOSFET
The RFL2N06L N-channel enhancement mode silicon gate
power field effect transistor is designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9520.
Ordering Information
PART NUMBER PACKAGE BRAND
RFL2N06L TO-205AF RFL2N06L
NOTE: When ordering, use the entire part number.
File Number 1560.3
Features
• 2A, 50V and 60V
DS(ON)
= 0.950Ω
•r
• Design Optimized for 5V Gate Drives
• Can be Driven from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Symbol
D
Packaging
DRAIN
(CASE)
G
S
JEDEC TO-205AF
SOURCE
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
Page 2
RFL2N06L
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFL2N06L UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DS
D
DM
GS
D
50 V
60 V
2A
10 A
±10 V
8.33 W
Above TC = 25oC, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0667 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T
STG
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
300
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
DSSID
GS(TH)VGS
Zero Gate Voltage Drain Current IDSS VDS = Rated BV
Gate to Source Leakage Current I
Drain to Source On Voltage (Note 2) V
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
GSS
DS(ON)ID
DS(ON)ID
d(ON)ID
r
d(OFF)
f
ISS
OSS
RSS
θJC
= 250µA, VGS = 0V 60 - - V
= VDS, ID = 250µA, (Figure 8) 1 - 2 V
, VGS = 0V - - 1 µA
DSS
VDS = 0.8 x Rated BV
, VGS = 0V, TC = 125oC- -25µA
DSS
VGS = ±10V, VDS = 0V - - ±100 nA
= 2A, VGS = 5V - - 1.9 V
=2A, VGS = 5V, (Figures 6, 7) - 0.950 Ω
= 2A, VDD = 30V, RG = 6.25Ω, RL =30Ω
VGS = 5V, (Figures 10, 11, 12)
-1020ns
- 65 130 ns
-2040ns
-3060ns
VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) - - 225 pF
- - 100 pF
- - 40 pF
--15oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
SD
rr
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
2
ISD = 2A - - 1.4 V
ISD = 2A, dISD/dt = 100A/µs - 150 - ns
Page 3
RFL2N06L
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE
TEMPERATURE
10
OPERATION IN THIS AREA
LIMITED BY r
1
DS(ON)
TJ = MAX RATED
= 25oC
T
C
2.5
2.0
1.5
1.0
, DRAIN CURRENT (A)
D
I
0.5
0
25 50 75 100 125 150
T
, CASE TEMPERATURE (oC)
C
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
PULSE DURATION = 80µs
12
T
= 25oC
C
10
8
VGS = 10V
VGS = 7.5V
6
0.10
, DRAIN CURRENT (A)
D
I
0.01
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
100
1000
4
, DRAIN CURRENT (A)
D
I
2
0
01234567
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS
8
VDS = 10V
7
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
6
5
4
3
2
TC = 125oC
, DRAIN TO SOURCE CURRENT (A)
1
DS(ON)
I
0
123456
TC = -40oC
VGS, GATE TO SOURCE VOLTAGE (V)
TC = -40oC
TC = 25oC
TC = 125oC
1.6
VGS = 5V
PULSE DURATION = 80µs
1.4
1.2
1.0
0.8
0.6
, DRAIN TO SOURCE
ON RESISTANCE(Ω)
0.4
DS(ON)
r
0.2
0
0246810
TC = 125oC
TC = 25oC
TC = -40oC
ID, DRAIN CURRENT (A)
VGS = 5V
4.5V
4V
3.5V
3V
2.5V
2V
FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TOSOURCE ON RESISTANCE vs DRAIN
CURRENT
3
Page 4
RFL2N06L
Typical Performance Curves Unless Otherwise Specified (Continued)
2
VGS = 5V, ID = 2A
1.5
1
0.5
NORMALIZED DRAIN TO
SOURCE ON RESISTANCE
0
-50 0 50 100
, JUNCTION TEMPERATURE (oC)
T
J
150
200
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
400
300
200
C, CAPACITANCE (pF)
100
0
01020304050
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
VGS = 0V, f = 1MHz
C
= CGS + C
C
C
ISS
RSS
OSS
= C
≈ C
GD
GD
+ C
DS
C
ISS
C
OSS
C
RSS
GD
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2
VGS = VDS, ID = 250µA
1.5
1
NORMALIZED GATE
0.5
THRESHOLD VOLTAGE
0
-50 0 50 100
, JUNCTION TEMPERATURE (oC)
T
J
150
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGEvs
JUNCTION TEMPERATURE
60
45
30
15
, DRAIN TO SOURCE VOLTAGE (V)
DS
V
0
VDD = BV
I
20
I
DRAIN SOURCE VOLTAGE
G(REF)
G(ACT)
RL = 4Ω
I
= 0.5mA
G(REF)
V
GS
GATE SOURCE
VOLTAGE
DSS
0.75BV
0.50BV
0.25BV
t, TIME (µs)
= 5V
DSS
DSS
DSS
VDD = BV
80
DSS
I
G(REF)
I
G(ACT)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHINGWAVEFORMS FOR
CONSTANT GATE CURRENT
10
8
6
4
2
0
200
, GATE TO SOURCE VOLTAGE (V)
GS
V
Test Circuits and Waveforms
R
G
V
GS
FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
4
t
ON
t
d(ON)
t
R
L
+
V
DD
-
DUT
V
DS
90%
0
V
GS
10%
0
r
10%
50%
PULSE WIDTH
t
d(OFF)
90%
t
OFF
50%
t
f
90%
10%
Page 5
RFL2N06L
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5
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