Datasheet RFL1P08, RFL1P10 Datasheet (Intersil)

July 1998

Semiconductor

RFL1P08,

RFL1P10

1A, -80V and -100V, 3.65 Ohm,

P-Channel Power MOSFETs

Features

• 1A, -80V and -100V

•r

DS(ON)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

= 3.65Ω

Ordering Information

PART NUMBER PACKAGE BRAND

RFL1P08 TO-205AF RFL1P08
RFL1P10 TO-205AF RFL1P10

NOTE: When ordering, include the entire part number.

Packaging

Description

These are P-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir­cuits.

Formerly developmental type TA9400.

Symbol

D

G

S

JEDEC TO-205AF

DRAIN
(CASE)

GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

6-1

SOURCE

File Number 1535.2

RFL1P08, RFL1P10

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFL1P08 RFL1P10 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20KΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D

DM

GS

D

-80 -100 V

-80 -100 V
11A
55A

±20 ±20 V

8.33 8.33 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0667 0.0667 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .T

AUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

300 300

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSS

ID = 250µA, VGS = 0

RFL1P08 -80 - - V

RFL1P10 -100
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On-Voltage (Note 2) V
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

GS(TH)

DSS

GSS

DS(ON)ID

DS(ON)ID

d(ON)

r

d(OFF)

f

ISS
OSS
RSS

JC

θ

VGS = VDS, ID = 250µA -2 - -4 V
VDS = Rated BV

= 0.8 x Rated BV

V

DS

DSS,VGS

= 0V - - -1 µA

DSS,VGS

= 0,

25 µA

TC = 125oC
VGS = ±20V, VDS = 0 - - ±100 nA

= 1A, VGS = -10V - - -3.65 V
= 1A, VGS = -10V (Figures 6, 7) - - 3.65 Ω

I

≈ 1A, V

D

R

= 50Ω

G

VGS = -10V
RL = 47Ω
(Figures 10, 11, 12)

DD

= -50V

- 7 25 ns

-1545ns

-1445ns

-1125ns

VGS = 0V, VDS = -25V
f = 1MHz
(Figure 9)

- - 150 pF

- - 80 pF

- - 30 pF

--15

o

C/W

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

SD

rr

ISD = -1A - - -1.4 V
ISD = -1A, dISD/dt = 50A/µs - 135 - ns

NOTES:

2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by mazimum junction temperature.

6-2

RFL1P08, RFL1P10

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150

, CASE TEMPERATURE (oC)

T

C

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERA TURE

10.0
OPERATION IN THIS AREA

LIMITED BY R

1.0

DS(ON)

TC = 25oC

-1.2

-1.0

-0.8

-0.6

-0.4

, DRAIN CURRENT (A)

D

I

-0.2

0

25 50 75 100 125 150

, CASE TEMPERATURE (oC)

T

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

4

PULSE DURATION = 80µs
T

= 25oC

C

3

VGS = -20V

2

0.10

, DRAIN CURRENT (A)

D

I

RFL1P08

RFL1P10

0.01

1 10 100 1000

VDS, DRAIN TO SOURCE (V)

DRAIN CURRENT (A)

1

D,

I

0

0-2-3-4-5

VGS = -4V

-1
V

DRAIN TO SOURCE VOLTAGE (V)

DS,

FIGURE 3. FORWARD BIAS OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

2.5
VDS= -10V

PULSE DURATION = 80µs

2

1.5

1

0.5

DRAIN TO SOURCE CURRENT (A)

DS(ON),

0

I

0 -2 -4 -6 -8 -10

GATE TO SOURCE VOLTAGE (V)

V

GS,

-40oC
25oC

125oC

4

125oC

3

2

DRAIN TO SOURCE ON

RESISTANCE (Ω)

1

DS(ON),

r

0

012345

ID,DRAIN CURRENT (A)

VGS = -10V
PULSE DURATION = 80µs

o

C

25

o

-40

C

VGS = -10V

VGS = -8V
VGS = -7V
VGS = -6V
V

= -5V

GS

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN

CURRENT

6-3

RFL1P08, RFL1P10

Typical Performance Curves

2

ID= 1A
VGS = -10V

1.5

1

0.5

ON RESISTANCE (mΩ)

NORMALIZED DRAIN TO SOURCE

0

-50 0 50 100 150
JUNCTION TEMPERATURE (oC)

T

J,

Unless Otherwise Specified (Continued)

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

160
140

120

100

80

60

C, CAPACITANCE (pF)

40

20

0

0 -10 -20 -30 -40 -50

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

VGS = 0V, f = 1MHz

= CGS + C

C

ISS

C

= C

RSS
OSS

≈ C

GD

DS

+ C

C

C

C

ISS

OSS

C

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

GD

RSS

GD

1.4

= 250µA

I

D

VDS = -5V

1.3

1.2

1.1

1.0

0.9

NORMALIZED GATE

0.8

THRESHOLD VOLTAGE (V)

0.7

0.6

-50 0 50 100
T

JUNCTION TEMPERATURE (oC)

J,

FIGURE 8. NORMALIZED GATE THRESHOLD V OLTA GE vs

JUNCTION TEMPERATURE

100

= BV

DSS
DSS
DSS

V

DD

DSS

I

G(REF)

I

G(ACT)

75

50

25

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

VDD= BV

DSS

I

G(REF)

20 80

I

G(ACT)

GATE

SOURCE

VOLTAGE
RL = 50

I

= 0.095mA

G(REF)

= -10V

V

GS

0.75BV

0.50BV

0.25BV

DRAIN SOURCE

VOLTAGE

t, TIME (µs)

NOTE: Refer to Harris Application Notes AN7254 and AN7260.

FIGURE 10. NORMALIZED SWITCHING WA VEFORMS FOR

CONSTANT GATE CURRENT

150

10

8

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

Test Circuits and Waveforms

DUT

R

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

G

t

ON

t

d(ON)

t

R

L

-

V

DD

+

0

V

DS

V

GS

0

10%

r

10%

90%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

90%

t

f

10%

6-4