Datasheet RFL1N18, RFL1N20 Datasheet (Intersil)

January 1998

Semiconductor

RFL1N18,

RFL1N20

1A, 180V and 200V, 3.65 Ohm,

N-Channel Po wer MOSFETs

Features

• 1A, 180V and 200V

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 3.65Ω

DS(ON)

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

RFL1N18 TO-205AF RFL1N18
RFL1N20 TO-205AF RFL1N20

NOTE: When ordering, use the entire part number.

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA09289.

Symbol

D

G

S

Packaging

JEDEC TO-205AF

DRAIN
(CASE)

SOURCE

GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1997

5-1

File Number 1442.2

RFL1N18, RFL1N20

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFL1N18 RFL1N20 UNITS

Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D

DM

GS

D

180 200 V
180 200 V

11A
55A

±20 ±20 V

8.33 8.33 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0667 0.0667 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V

RFL1N18 180 - - V

RFL1N20 200 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On-Voltage (Note 2) V

GS(TH)VGS

DSS

GSS

DS(ON)ID

= VDS, ID = 250µA, (Figure 8) 2 - 4 V

VDS = 0.8 x Rated
BV

DSS

TC = 25oC--1µA
T

= 125oC--25µA

C

VGS = ±20V, VDS = 0V - - ±100 nA

= 1A, VGS = 10V - - 3.65 V

ID = 2A, VGS = 10V - - 8.3 V

Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R

fs

r

f

ISS
OSS
RSS

θJC

= 1A, VGS = 10V, (Figures 6, 7) - - 3.65 Ω

ID = 1A, VDS = 10V, (Figure 10) 400 - - S

≈ 1A, VDD = 100V RGS = 50Ω,

VGS = 10V, (Figures 11, 12, 13)

-1525ns

-2030ns

-2540ns

-3050ns

VGS = 0V, VDS = 25V, f = 1MHz,
(Figure 9)

- - 200 pF

- - 60 pF

- - 25 pF

--15

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

NOTE:

2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.

SD

rr

ISD = 1A - - 1.4 V
ISD= 2A, dISD/dt = 50A/µs - 200 - ns

5-2

RFL1N18, RFL1N20

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150

T

, CASE TEMPERATURE (oC)

C

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs

CASE TEMPERATURE

10.00

1.00

TC = 25oC
TJ = MAX RATED

1.4

1.2

1.0

0.8

0.6

0.4

, DRAIN CURRENT (A)

D

I

0.2

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (oC)

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

3.0

250µs PULSE TEST
DUTY CYCLE ≤ 20%

2.5
T

= 25oC

C

2.0

VGS = 10V

VGS = 20V

VGS = 8V

1.5

OPERATION IN THIS

0.10

, DRAIN CURRENT (A)

D

I

0.01

AREA LIMITED BY r

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

RFL1N18
RFL1N20

101

100

1000

1.0

, DRAIN CURRENT (A)

D

I

0.5

0

01234567

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

3.0
VDS = 15V

250µs PULSE TEST

2.5

DUTY CYCLE ≤ 2%

2.0

1.5

1.0

, DRAIN CURRENT (A)

D

I

0.5

TC = 125oC

0

024681012

V

GS

TC = -40oC

TC = -40oC

, GATE TO SOURCE VOLTAGE (V)

TC = 25oC

TC = 125oC

6

VGS = 10V
250µs PULSE TEST

5

DUTY CYCLE ≤ 2%

4

3

, DRAIN TO SOURCE

2

ON RESISTANCE (Ω)

DS(ON)

r

1

0

0 0.5 1.0 1.5 2.0 2.5 3.0

, DRAIN CURRENT (A)

I

D

VGS = 7V
VGS = 6V

VGS = 5V

VGS = 4V

TC = 125oC

TC = 25oC

TC = -40oC

FIGURE 5. TRANSFER CHARACTERSTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

5-3

RFL1N18, RFL1N20

Typical Performance Curves

2.0
VGS = 10V, ID = 1A

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50 0 50
, JUNCTION TEMPERATURE (oC)

T

J

Unless Otherwise Specified (Continued)

100

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESIST ANCE

vs JUNCTION TEMPERA TURE

220

f = 1MHz

180

140

100

60

C, CAPACITANCE (pF)

20

010203040 5060

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

C
C

C

ISS

OSS
RSS

150

1.4
VGS = VDS, ID = 250µA

1.2

1.0

NORMALIZED GATE

0.8

THRESHOLD VOLTAGE

0.6

-50 0 50 100 150
, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 8. NORMALIZED GATE THRESHOLD vs JUNCTION

TEMPERA TURE

1000

VDS = 15V

900

250µs PULSE TEST
DUTY CYCLE ≤ 2%

800
700
600
500
400
300

, TRANSCONDUCTANCE (S)

200

fs

g

100

0

0 0.5 1 1.5 2 2.5

I

, DRAIN CURRENT (A)

D

TC = -40oC

TC = 25oC

TC = 125oC

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. TRANSCONDUCTANCE vs DRAIN CURRENT

200

150

100

, VOLTS (V)

DS

V

50

BV

DSS

VDD = V

DSS

0

I

G(REF)

20

I

G(ACT)

GATE

TO

SOURCE

VOLTAGE

0.75V

0.50V

0.25V

RL = 100Ω

I

G(REF)

V

GS

DRAIN TO SOURCE

VOLTAGE

t, TIME (µs)

DSS
DSS
DSS

= 0.09mA

= 10V

VDD = V

80

DSS

I
I

G(REF)
G(ACT)

10

8

6

, VOLTS (V)

4

GS

V

2

0

NOTE: Refer to Harris Application Notes AN7254 and AN7260.

FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT

5-4

Test Circuit and Waveforms

RFL1N18, RFL1N20

R

G

V

GS

FIGURE 12. SWITCHING TIME TEST CIRCUIT

t

ON

t

d(ON)

t

R

L

+

V

DD

-

DUT

V

DS

90%

0

V

GS

10%

0

r

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

10%

90%

FIGURE 13. RESISTIVE SWITCHING WAVEFORMS

5-5