Datasheet RFL1N12, RFL1N15 Datasheet (Intersil)

January 1998

Semiconductor

RFL1N12,

RFL1N15

1A, 120V and 150V, 1.9 Ohm,

N-Channel Power MOSFETs

Features

• 1A, 120V and 150V

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 1.9Ω

DS(ON)

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

RFL1N12 TO-205AF RFL1N12
RFL1N15 TO-205AF RFL1N15

NOTE: When ordering, use the entire part number.

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA09196.

Symbol

D

G

S

Packaging

JEDEC TO-205AF

DRAIN
(CASE)

SOURCE

GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1997

5-1

File Number 1444.2

RFL1N12, RFL1N15

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFL1N12 RFL1N15 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

D

DM

GS

D

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0667 0.0667W/

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

120 150 V
120 150 V

11A
55A

±20 ±20 V

8.33 8.33 W

o

C

-55 to 150 -55 to 150

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V

RFL1N12 120 - - V

RFL1N15 150 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Voltage (Note 2) V

GS(TH)VGS

DSS

GSS

DS(ON)ID

= VDS, ID = 250µA, (Figure 8) 2 - 4 V
VDS = 0.8 x Rated BV
T

= 125oC--25µA

C

, TC = 25oC--1µA

DSS

VGS = ±20V, VDS = 0V - - ±100 nA

=1A, VGS =10V - - 1.9 V

ID = 2A, VGS = 10V - - 6.3 V

Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R

fs

r

f

ISS
OSS
RSS

θJC

= 1A, VGS = 10V, (Figures 6, 7) - - 1.9 Ω

ID = 1A, VDS = 10V, (Figure 10) 400 - - S

≈ 1A, VDD = 75V, RGS = 50Ω

VGS = 10V, (Figures 11, 12, 13)

-1725ns

-3045ns

-3045ns

-3050ns

VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) - - 200 pF

- - 80 pF

- - 25 pF

--15

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t

NOTE:

2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.

SD

rr

ISD = 1A - - 1.4 V
ISD = 1A, dISD/dt = 50A/µs - 150 - ns

5-2

RFL1N12, RFL1N15

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERA TURE

10.00
OPERATION IN THIS AREA

LIMITED BY r

1.00

DS(ON)

1.5

1.0

0.5

ID, DRAIN CURRENT (A)

0

25 50 75 100 125 150

, CASE TEMPERATURE (oC)

T

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

4.0

250µA PULSE TEST

3.5

3.0

2.5

2.0

VGS = 20V

VGS = 10V

VGS = 8V
VGS = 7V

0.10

, DRAIN CURRENT (A)

D

I

0.01
1

VDS, DRAIN TO SOURCE VOLTAGE (V)

1.5

, DRAIN CURRENT (A)

1

D

I

RFL1N12 RFL1N15

10

100

1000

0.5

0

012345678910

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 6V

VGS = 5V
VGS = 4V

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

3.0

2.5

2.0

1.5

1.0

, DRAIN CURRENT (A)

D

I

0.5
TC = 125oC

0

0 2 4 6 8 10 12 14

TC = 25oC

TC = -40oC

TC = -40oC

, GATE TO SOURCE VOLTAGE (V)

V

GS

VDS = 12V
250µA PULSE TEST
DUTY CYCLE 2%

TC = 125oC

6

250µA PULSE TEST
DUTY CYCLE 2%

5

4

3

, DRAIN TO SOURCE

2

ON RESISTANCE

DS(ON)

r

1

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

I

, DRAIN CURRENT (A)

D

TC = 25oC

TC = 125oC

TC = -40oC

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESIST ANCE vs GATE

VOLTAGE AND DRAIN CURRENT

5-3

RFL1N12, RFL1N15

Typical Performance Curves

2.0
VGS = 10V, ID = 1A

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50 0 50 100
T

, JUNCTION TEMPERATURE (oC)

J

Unless Otherwise Specified (Continued)

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

240

200

150

f = 1MHz

200

1.4
VGS = VDS, ID = 250µA

1.2

1.0

NORMALIZED GATE

0.8

THRESHOLD VOLTAGE (V)

0

-50 0 50 100
T

, JUNCTION TEMPERATURE (oC)

J

150

FIGURE 8. NORMALIZED GATE THRESHOLD vs JUNCTION

TEMPERA TURE

1200

VDS = 10V
80µs PULSE TEST

1000

TC = -40oC

200

160

120

80

C, CAPACITANCE (pF)

40

0

010203040506070

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

C

C

C

OSS

RSS

ISS

800

600

400

, TRANSCONDUCTANCE (S)

f

200

g

0

0 0.5 1.0 1.5 2.0 2.5

, DRAIN CURRENT (A)

I

D

TC = 25oC

TC= 125oC

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. TRANSCONDUCTANCE vs DRAIN CURRENT

150

112.5

75

, VOLTS (V)

DS

V

37.5

BV

DSS

VDD = V

DSS

0

20

I

G(REF)

I

G(ACT)

GATE

SOURCE

VOLTAGE

RL = 75Ω

I

= 0.095mA

G(REF)

V

= 10V

GS

0.75V

0.50V

0.25V

DRAIN TO SOURCE

VOLTAGE

t, TIME (µs)

TO

DSS
DSS
DSS

VDD = V

80

DSS

I

G(REF)

I

G(ACT)

10

8

6

, VOLTS (V)

4

GS

V

2

0

3.0

NOTE: Refer to Harris Application Notes AN7254 and AN7260.

FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT

5-4

Test Circuits and Waveforms

RFL1N12, RFL1N15

0V

V

DD

R

L

V

V

DS

V

GS

R

GS

DUT

DS

V

GS

10%

t

D(ON)

90%

t

ON

50%

10%

t

R

PULSE WIDTH

t

D(OFF)

90%

t

OFF

FIGURE 12. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 13. RESISTIVE SWITCHING WAVEFORMS

50%

t

F

90%

10%

5-5