Datasheet RFK25N18, RFK25N20 Datasheet (Intersil)

RFK25N18, RFK25N20

October 1998 File Number 1500.3Data Sheet

25A, 180V and 200V, 0.150 Ohm,
N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA09594.

Ordering Information

PART NUMBER PACKAGE BRAND

RFK25N18 TO-204AE RFK25N18
RFK25N20 TO-204AE RFK25N20

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AE

DRAIN
(FLANGE)

Features

• 25A, 180V and 200V

•r

DS(ON)

= 0.150Ω

Symbol

D

G

S

GATE (PIN 1)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

SOURCE (PIN 2)

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFK25N18, RFK25N20

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFK25N18 RFK25N20 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D

DM

GS

D

180 200 V
180 200 V

25 25 A

60 60 A
±20 ±20 V
150 150 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 1.2 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

260 260

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0

RFK25N18 180 - - V
RFK25N20 200 - - V

Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R

DSS

GSS

r

f

ISS
OSS
RSS

JC

θ

= VDS, ID = 250µA 2-4V
VDS= Rated BV
VDS= 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

DSS,VGS

= 0V, TC= 125oC- - 25 µA

VGS = ±20V, VDS = 0V - - ±100 nA

= 25A, VGS = 10V (Figures 6, 7) - - 0.150 Ω
= 25A, VGS = 10V - - 3.75 V

≈ 12.5A, V

RL= 8 ,
(Figures 10, 11, 12)

= 100V, RG= 50 , VGS = 10V

DD

-4080ns

- 150 225 ns

- 300 400 ns

- 120 200 ns

VGS = 0V, VDS = 25V
f = 1MHz
(Figure 9)

- - 3500 pF

- - 900 pF

- - 400 pF

- - 0.83oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

NOTES:

2. Pulse test: pulse width ≤ 300µs Duty Cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

2

ISD = 12.5A - - 1.4 V

SD

ISD= 4A, dISD/dt = 100A/µs - 300 - ns

rr

RFK25N18, RFK25N20

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

100

10

I

D(MAX)

CONTINUOUS

TC = 25oC

TJ = MAX RATED

30

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

PULSE DURATION = 80µs

60

DUTY CYCLE ≤ 2%

= 25oC

T

C

50

40

VGS = 10V

VGS = 20V

VGS = 8V

VGS = 7V

OPERATION IN THIS AREA
MAY BE LIMITED BY r

1

, DRAIN CURRENT (A)

D

I

0.1
1 10 100 1000

DS(ON)

VDS, DRAIN TO SOURCE (V)

30

20

DRAIN CURRENT (A)

D,

I

10

034567

21

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

VDS= 10V
PULSE DURATION = 80µs

35

DUTY CYCLE ≤ 2%

25

15

125oC

DRAIN TO SOURCE CURRENT (A)

5

DS(ON),

I

0246810

25oC

V

GATE TO SOURCE VOLTAGE (V)

GS,

-40oC

0.16

0.14

0.12

0.10

0.08

0.06

DRAIN TO SOURCE ON

RESISTANCE (Ω)

0.04

DS(ON),

r

0.02

0

01020304050

125oC

25

-40

VGS= 10V
PULSE DURATION = 80µs

ID,DRAIN CURRENT (A)

o

C

o

C

VGS = 6V

VGS = 5V

V

= 4V

GS

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN

CURRENT

3

RFK25N18, RFK25N20

Typical Performance Curves

3

= 25A

I

D

VGS = 10V
PULSE DURATION = 80µs

2

1

ON RESISTANCE

NORMALIZED DRAIN TO SOURCE

0

-50 0 50 100 150
T

JUNCTION TEMPERATURE (oC)

J,

Unless Otherwise Specified (Continued)

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

VGS = 0V, f = 1MHz

= CGS + C

C

3000

C

ISS

2000

1000

C, CAPACITANCE (pF)

0

01020304050

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

C

C

OSS

RSS

C
C

ISS
RSS
OSS

= C

GD

≈ CDS + C

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

GD

GD

1.3
ID= 250µA

VGS = V

NORMALIZED GATE

1.2

1.1

1.0

0.9

0.8

THRESHOLD VOLTAGE (V)

0.7

-50

DS

0 50 100 150

JUNCTION TEMPERATURE (oC)

T

J,

FIGURE 8. NORMALIZED GATETHRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

200

150

100

50

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

VDD= BV

0

DSS

0.75BV

0.50BV

0.25BV

DRAIN TO SOURCE VOLTA GE

I

G(REF)

20 80

I

G(ACT)

GATE

SOURCE

VOLTAGE

RL = 8Ω
I

= 2mA

G(REF)

VGS = 10V

DSS
DSS
DSS

t, TIME (µs)

0.75BV

0.50BV

0.25BV

V

DSS
DSS
DSS

DD

= BV

I

I

DSS

G(REF)

G(ACT)

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.

FIGURE 10. NORMALIZED SWITCHING WAVEFORMSFOR

CONSTANT GATE CURRENT

10

8

6

4

2

0

, GATE TO SOURCE VOLTAGE (V)

GS

V

4

Test Circuits and Waveforms

RFK25N18, RFK25N20

t

ON

t

d(ON)

t

R

L

+

V

R

G

DUT

V

GS

DD

-

V

DS

0

V

GS

10%

0

r

90%

10%

50%

PULSE WIDTH

t

d(OFF)

FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

V

DS

12V

BATTERY

0

0.2µF

I

g(REF)

CURRENT

REGULATOR

50kΩ

0.3µF

G

IG CURRENT

SAMPLING

RESISTOR RESISTOR

SAME TYPE
AS DUT

D

DUT

S

CURRENT

I

D

SAMPLING

(ISOLATED
SUPPLY)

V

DS

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

I

g(REF)

0

V

90%

GS

t

OFF

50%

t

f

90%

10%

FIGURE 13. GATE CHARGE TEST CIRCUIT FIGURE 14. GATE CHARGE WAVEFORMS

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Intersil semiconductor products are sold by description only. Intersil Corporationreserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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