Datasheet RFH25P08, RFH25P10, RFK25P10 Datasheet (Intersil)

Semiconductor

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September 1998

RFH25P08, RFH25P10,

RFK25P08, RFK25P10

-25A, -100V and -80V, 0.150 Ohm,
P-Channel Power MOSFETs

[ /Title
(RFH25
P08,
RFH25P
10,
RFK25P
08,
RFK25P

10)
Subject

(-25A, ­100V, ­80V,

0.150

Ohm, P­Channel
Power
MOS­FETs)

Author

()

Key-

words (­25A, ­100V a­80V,

0.150

Ohm, P­Channel
Power
MOS­FETs)

Creator

()

DOCIN

FO pdf­mark

Features

• -25A, -100V and -80V

•r

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.150Ω

DS(ON)

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

RFH25P08 TO-218AC RFH25P08
RFH25P10 TO-218AC RFH25P10
RFK25P08 TO-204AE RFK25P08
RFK25P10 TO-204AE RFK25P10

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO -218AC JEDEC TO-204AE

SOURCE

DRAIN

DRAIN

GATE

Description

These are P-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir­cuits.

Formerly developmental type TA49230.

Symbol

D

G

S

DRAIN
(FLANGE)

GATE (PIN 1)

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

6-1

File Number 1632.1

RFH25P08, RFH25P10, RFK25P08, RFK25P10

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

= 25oC, Unless Otherwise Specified

C

DS

DGR

DM

GS

D

D

RFH25P08
RFK25P08

RFH25P10
RFK25P10 UNITS

-80 -100 V

-80 -100 V

-25 -25 A

-60 -60 A
±20 ±20 V
150 150 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 1.2 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 (for TO-218AC). . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V

RFH25P08, RFK25P08 -80 - - V

RFH25P10, RFK25P10 -100 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

GS(TH)VGS

DSS

= VDS, ID = 250µA, (Figure 8) -2 - -4 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0 - - -1 µA

DSS

DSS

, VGS = 0,

- - -25 µA

TC = 125oC

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R

GSS

ISS

OSS

RSS

θJC

VGS = ±20V, VDS = 0V - - ±100 nA

= 25A, VGS = -10V, (Figures 6, 7) - - 0.150 Ω
= -25A, VGS = -10V - - -3.75 V

≈ 12.5A, V

VGS = -10V, RL = 4.0Ω

r

(Figures 10, 11, 12)

= -50V, RGS = 50Ω,

DS

-3550ns

- 165 250 ns

- 270 400 ns

f

VGS = 0V, VDS = -25V, f = 1MHz
(Figure 9)

- 165 250 ns

- - 3000 pF

- - 1500 pF

- - 600 pF

RFK25P08, RFK25P10 - - 0.83

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V

SD

Diode Reverse Recovery Time t

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

ISD = -12.5A - - -1.4 V
ISD = -4A, dISD/dt = 100A/µs - 300 - ns

rr

6-2

RFH25P08, RFH25P10, RFK25P08, RFK25P10

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

100

ID MAX
CONTINUOUS

10

OPERATION IN
THIS AREA MAY BE
LIMITED BY r

1

, DRAIN CURRENT (A)

D

I

0.1

V

DSS

RFH25P08, RFK25P08
V

DSS

RFH25P10, RFK25P10

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

(MAX) = -80V

(MAX) = -100V

-10-1

TC = 25oC, TJ = MAX RATED

DC OPERATION

-100

-1000

30

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (oC)

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

100

PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

= 25oC

T

C

80

60

40

, DRAIN CURRENT (A)

D

I

20

0

0

VDS, DRAIN TO SOURCE VOLTAGE (V)

-2

VGS = -20V

-4 -6

VGS = -10V

VGS = -8V

VGS = -7V

VGS = -6V

= -5V

V

GS

VGS = -4V

-8

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

40

VDS = -10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

30

20

10

, DRAIN TO SOURCE CURRENT (A)

DS(ON)

I

0

0

VGS, GATE TO SOURCE VOLTAGE (V)

125oC

-4 -6 -8 -10-2

TC = -40oC

-40oC

25oC

125oC

0.20

0.16

0.12

0.08

, DRAIN TO SOURCE

ON RESISTANCE (Ω)

0.04

DS(ON)

r

V

= -10V

GS

PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

0

0

10

ID, DRAIN CURRENT (A)

TC = 125oC

20

TC = 25oC

TC = -40oC

30 40

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs

DRAIN CURRENT

6-3

50

RFH25P08, RFH25P10, RFK25P08, RFK25P10

Typical Performance Curves

4

ID = 25A

= -10V

V

GS

Unless Otherwise Specified (Continued)

3

2

ON RESISTANCE

1

NORMALIZED DRAIN TO SOURCE

0

-50 0 50
T

, JUNCTION TEMPERATURE (oC)

J

100

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

4000

C

RSS

C

3000

OSS

C

ISS

2000

1000

C, CAPACITANCE (pF)

0

0 -20 -50

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

VGS = 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS

C

≈ CDS + C

OSS

C

ISS

C

OSS

C

RSS

-30 -40-10

GD

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

GD

GS

1.6
ID = 250µA

1.4

VGS = V

DS

1.2

1.0

0.8

0.6

0.4

0.2

0

150

NORMALIZED GATE THRESHOLD VOLTAGE

-50 0 50
, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 8. NORMALIZED GATE THRESHOLD VOLTA GE vs

JUNCTION TEMPERATURE

100

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

BV

DSS

75

VDD = BV

DSS

50

GATE
SOURCE
VOLTAGE

0.75BV

0.50BV

0.25BV

VDD = BV

DSS
DSS
DSS

RL = 4Ω

I

25

G(REF)

V

GS

= 1.5mA

= -10V

DRAIN SOURCE VOLTAGE

0

I

G(REF)

20

I

G(ACT)

t, TIME (µs)

80

NOTE: Refer to Harris Application Notes AN7254 and AN7260.

FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

100

DSS

I

G(REF)

I

G(ACT)

150

10

8

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

Test Circuits and Waveforms

DUT

R

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

G

t

ON

t

d(ON)

t

R

L

-

V

DD

+

0

V

DS

V

GS

0

10%

r

10%

90%

50%

t

d(OFF)

t

OFF

50%

90%

t

f

10%

PULSE WIDTH

90%

6-4