Datasheet RFG60P03 Datasheet (Fairchild Semiconductor)

RFG60P03, RFP60P03,

SEMICONDUCTOR

RF1S60P03, RF1S60P03SM

December 1995

Features

• 60A, 30V

•r

•

= 0.027Ω

DS(ON)

Temperature Compensating

PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

• +175

C Operating Temperature

Description

The RFG60P03, RFP60P03, RF1S60P03 and
RF1S60P03SM P-Channel power MOSFETs are manufac­tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.

PACKAGE AVAILABILITY

PART NUMBER PACKAGE BRAND

RFG60P03 TO-247 RFG60P03
RFP60P03 TO-220AB RFP60P03
RF1S60P03 TO-262AA F1S60P03
RF1S60P03SM TO-263AB F1S60P03

NOTE: When ordering use the entire part number.

Formerly developmental type TA49045.

60A, 30V, Avalanche Rated, P-Channel

Enhancement-Mode Power MOSFETs

Packages

JEDEC STYLE TO-247

SOURCE

DRAIN

DRAIN

GATE

GATE

GATE

DRAIN

(BOTTOM

SIDE METAL)

DRAIN

(FLANGE)

DRAIN

(FLANGE)

JEDEC TO-220AB

JEDEC TO-262AA

A

SOURCE

SOURCE

DRAIN

Symbol

D

JEDEC TO-263AB

G

GATE

S

Absolute Maximum Ratings T

Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation

TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright

© Harris Corporation 1995

= +25oC

C

4-51

SOURCE

RFG60P03, RFP60P03,

RF1S60P03, RFS60P03SM UNITS

DSS

DGR

GS

D

Refer to Peak Current Curve

DM

AS

D

T

STG

Refer to UIS Curve

A

M

A

DRAIN

(FLANGE)

-30 V

-30 V

±20 V

60

176

1.17

-55 to +175

File Number 3951.1

A

W

W/oC

o

C

Specifications RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM

Electrical Specifications T

= +25oC, Unless Otherwise Specified.

C

PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain-Source Breakdown Voltage BV

Gate Threshold Voltage V

Zero Gate Voltage Drain Current I

Gate-Source Leakage Current I

On Resistance r

Turn-On Time t

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Turn-Off Time t

Total Gate Charge Q

Gate Charge at 10V Q

DSS

GS(TH)

DSS

GSS

DS(ON)

ON

D(ON)

R

D(OFF)

F

OFF

G(TOT)

G(-10)

ID = 250µA, VGS = 0V -30 - - V

VGS = VDS, ID = 250µA -2 - -4 V

VDS = -30V,

TC = +25oC---1µA

VGS = 0V

T

= +150oC - - -50 µA

C

VGS = ±20V - - 100 nA

ID = 60A, VGS = -10V - - 0.027 Ω

VDD = -15V, ID = 60A

- - 140 ns
RL = 0.25Ω, VGS = -10V
RGS = 2.5Ω

-20-ns

-75-ns

-35-ns

-40-ns

- - 115 ns

VGS = 0 to -20V VDD = -24V,

- 190 230 nC

ID = 60A,

VGS = 0 to -10V - 100 120 nC

RL = 0.4Ω

Threshold Gate Charge Q

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Ambient R

G(TH)

ISS

OSS

RSS

θJC

θJA

Source-Drain Diode Ratings and Specifications

PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V

Reverse Recovery Time t

SD

RR

ISD = -60A - - -1.75 V

ISD = -60A, dISD/dt = -100A/µs - - 200 ns

VGS = 0 to -2V - 7.5 9 nC

VDS = -25V, VGS = 0V

- 3000 - pF
f = 1MHz

- 1500 - pF

- 525 - pF

- - 0.85

--80

o

C/W

o

C/W

4-52

RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM

Typical Performance Curves

-500

= +25oC

T

C

10

100µs

-100
1ms

1

0.5
P

DM

-1

10

-10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

-1

-1 -10 -60

DS(ON)

V

, DRAIN-TO-SOURCE VOLTAGE (V)

DS

V

DSS

MAX = -30V

10ms

100ms
DC

0.1

0.01

0.2

0.1

0.05

0.02

0.01

-5

10

SINGLE PULSE

10

NORMALIZED

JC,

θ

Z

THERMAL RESPONSE

t, RECTANGULAR PULSE DURATION (s)

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-4

-3

10

-2

10

FIGURE 1. SAFE OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL

IMPEDANCE

-70

-60

-50

-40

-10

3

VGS = -20V

FOR TEMPERATURES ABOVE +25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

175 TC–




II

=

----------------------- -

25



150

t

1

t

2

1/t2

JC

θ

0

10

= +25oC

T

C

+ T

C

1

10

-30

-20

, DRAIN CURRENT (A)

D

I

-10

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

-120
VGS = -20V

-90

-60

, DRAIN CURRENT (A)

D

-30

I

0

0.0

-1.5 -3.0 -4.5 -6.0 -7.5

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

PULSE DURATION = 250µs, T

VGS = -10V

VGS = -4.5V

C

VGS = -8V

VGS = -7V

VGS = -6V

VGS = -5V

= +25oC

VGS = -10V

2

-10

, PEAK CURRENT CAPABILITY (A)

DM

I

-50

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-6

10-510

10

FIGURE 4. PEAK CURRENT CAPABILITY

-120

PULSE TEST
PULSE DURATION = 250µs

-90

DUTY CYCLE = 0.5% MAX

-60

-30

, ON STATE DRAIN CURRENT (A)

D(ON)

I

0

0.0

-2.0 -4.0 -6.0 -8.0 -10.0
, GATE-TO-SOURCE VOLTAGE (V)

V

GS

-4

10-310-210-110

t, PULSE WIDTH (ms)

-55oC

+25oC

V

DD

0

= -15V

+175oC

1

10

FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS

4-53

RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM

Typical Performance Curves

2.0

1.5

1.0

0.5

, NORMALIZED ON RESISTANCE

DS(ON)

r

0.0

-80 -40 0 40 80 120 160 200

FIGURE 7. NORMALIZED r

2.0

1.5

PULSE DURATION = 250µs, VGS= -10V, ID = -60A

T

, JUNCTION TEMPERATURE (oC)

J

vs JUNCTION

DS(ON)

TEMPERATURE

(Continued)

ID = -250µA

2.0

VGS = VDS, ID = - 250µA

1.5

1.0

, NORMALIZED GATE

0.5

GS(TH)

THRESHOLD VOLTAGE

V

0.0

-80 -40 0 40 80 160120 200
TJ, JUNCTION TEMPERATURE (oC)

FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs

TEMPERATURE

1.2

1.0

0.8

1.0

0.5

BREAKDOWN VOLTAGE

, NORMALIZED DRAIN-TO-SOURCE

DSS

0.0

BV

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN

VOLTAGE vs TEMPERATURE

5000

4000

3000

2000

C, CAPACITANCE (pF)

1000

0

0

C

ISS

C

OSS

C

RSS

-5 -10 -15 -20 -25

VDS, DRAIN-TO-SOURCE VOLTAGE(V)

VGS = 0V, f = 1MHz

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0.0
0 25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 10. NORMALIZED SWITCHING WAVEFORMS

-30.0

-22.5

-15.0

-7.5

, DRAIN-SOURCE VOLTAGE (V)

DS

V

0.0

VDD = BV

20

I

G(REF)

I

G(ACT)

DSS

RL = 0.5Ω
I
V

0.75 BV

0.50 BV

0.25 BV

= -3mA

G(REF)

= -10V

GS

DSS

0.75 BV

DSS

0.50 BV

DSS

0.25 BV

t, TIME (µs)

VDD = BV

DSS
DSS
DSS

80

DSS

I

G(REF)

I

G(ACT)

-10.0

-7.5

-5.0

-2.5

0.0

, GATE-SOURCE VOLTAGE (V)

GS

V

FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTE AN7254 AND AN7260

4-54

RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM

Typical Performance Curves

-200

-100

, AVALANCHE CURRENT (A)

AS

I

-10

0.01 0.1 1 10

FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING

Test Circuits and Waveforms

(Continued)

STARTING TJ = +150oC

If R = 0

= (L) (IAS) / (1.3RATED BV

t

AV

If R ≠ 0

= (L/R) ln [(IAS*R) / (1.3 RATED BV

t

AV

, TIME IN AVALANCHE (ms)

t

AV

DSS

STARTING TJ = +25oC

- VDD)

- VDD) + 1]

DSS

V

VARY t

TO OBTAIN

P

REQUIRED PEAK I

DS

L

R

AS

G

DUT

-

V

DD

+

t

I

AS

BV

DSS

P

V

0V

t

P

V

GS

I

L

0.01Ω

t

AV

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

t

t

D(ON)

10%

ON

t

R

90%

PULSE WIDTH

10%

t

D(OFF)

0V

V

DD

R

L

V

DS

DUT

V

GS

R

GS

V

DS

V

GS

DS

90%

t

OFF

90%

50%50%

t

F

10%

V

DD

FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

4-55

RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM

Temperature Compensated PSPICE Model for the
RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM

.SUBCKT RFP60P03 2 1 3 REV 6/21/94

CA 12 8 5.01e-9
CB 15 14 3.9e-9
CIN 6 8 3.09e-9

DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD

EBREAK 5 11 17 18 -36.59
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1

IT 8 17 1

LDRAIN 2 5 1e-9
LGATE 1 9 4.92e-9
LSOURCE 3 7 2.36e-9

MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01

RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 1e-4
RGATE 9 20 3.25
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 11.28e-3
RVTO 18 19 RVTOMOD 1

GATE
1

LGATE

RGATE

DPLCAP

EVTO

-

+

18

8

209

S1A S2A

12

13

8

ESG

10

-

RIN CIN

14
13

S2BS1B

13

+

6
8

-

8
6

-

VTO

EDSEGS

5

+

RDRAIN

16
+

21

MOS1

6

15

CBCA

14

+

5
8

-

8

EBREAK

MOS2

DBREAK

RSOURCE

11

+
17
18

-

RBREAK

7

IT

DRAIN

LDRAIN

DBODY

LSOURCE

SOURCE

1817

RVTO

19

-

VBAT

+

2

3

S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD

VBAT 8 19 DC 1
VTO 21 6 -0.92

.MODEL DBDMOD D (IS=4.21e-13 RS=1e-2 TRS1=-2.69e-4 TRS2=-1.33e-6 CJO=5.05e-9 TT=5.33e-8)
.MODEL DBKMOD D (RS=3.80e-2 TRS1=-4.76e-4 TRS2=-4.17e-12)
.MODEL DPLCAPMOD D (CJO=4.05e-9 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.98 KP=16.27 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=8.05e-4 TC2=1.48e-6)
.MODEL RDSMOD RES (TC1=2.80e-3 TC2=2.62e-6)
.MODEL RVTOMOD RES (TC1=-3.34e-3 TC2=1.46e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=7.5 VOFF=4.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.5 VOFF=7.5)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.43 VOFF=-3.57)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.57 VOFF=1.43)

.ENDS

NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options; authors, William J. Hepp and C. Frank Wheatley.

4-56