Datasheet RFF70N06 Datasheet (Intersil)

RFF70N06

Data Sheet March 1999

25A, 60V, 0.025 Ohm, N-Channel Power MOSFET

The RFF70N06 N-Channel powerMOSFETismanufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Reliability screening is available as either commercial or TX/TXV equivalent of MIL-S-19500. Contact Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet.

Formerly developmental type TA49007.

Ordering Information

PART NUMBER PACKAGE BRAND

RFF70N06 TO-254AA RFF70N06

NOTE: When ordering, use the entire part number.

File Number

Features

• 25A†, 60V

DS(ON)

= 0.025Ω

•r

• Temperature Compensating PSPICE™ Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 150

• Reliability Screened

Current is limited by the package capability.

†

Symbol

D

G

S

4073.2

Commercial Version: RFG70N06.

Packaging

JEDEC TO-254AA

GATE

PACKAGE TAB

(ISOLATED)

CAUTION: Berylia Warning per MIL-S-19500.

Refer to package speciﬁcations.

SOURCE

DRAIN

4-442

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE™ is a trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

RFF70N06

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Speciﬁed

C

RFF70N06 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 4) (Figure 5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Rating (Figure 6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

L

60 V 60 V

±20 V

25 (Note 2)

Refer to UIS Curve

100

0.80

-55 to 150

260

A

W

W/oC

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

2. Current is limited by the package capability.

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I Drain to Source On Resistance (Note 3) r

DS(ON)ID

Turn-On Time t Turn-On Delay Time t

d(ON)

Rise Time t Turn-Off Delay Time t

d(OFF)

Fall Time t Turn-Off Time t Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q Threshold Gate Charge Q Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Thermal Resistance Junction to Case R Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(10)

g(TH)

ISS

OSS

RSS

θJC θJA

= 250µA, VGS = 0V 60 - - V

= VDS, ID = 250µA 2.0 3.0 4.5 V

VDS = Rated BV

DSS, VGS

VDS= 0.8 x Rated BV

= 0V - - 25 µA

DSS,VGS

= 0V, TC= 125oC - - 250 µA

VGS = ±20V, TC = 125oC--±100 µΑ

= 25A, VGS = 10V - - 0.025 Ω

VDD = 30V, I VGS = 10V, RGS = 2.35Ω (Figures 13, 16, 17)

≈ 25A, R

D

= 1.2Ω,

L

- - 240 ns

-2570 ns

- 70 170 ns

- 60 150 ns

-2565 ns

- - 215 ns

= 0 to 20V VDD = 30V, ID = 25A, VGS = 0 to 10V - - 145 nC VGS = 0 to 2V - - 7 nC

RL = 1.2Ω I

= 1.0mA

G(REF)

(Figures 18, 19)

VDS = 25V, VGS = 0V, f = 1MHz (Figure 12)

- - 260 nC

- 3100 - pF

- 900 - pF

- 300 - pF

- - 1.25

o

C/W

--48oC/W

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V Diode Reverse Recovery Time t

SD

rr

NOTES:

3. Pulse test: pulse width ≤ 300ms, duty cycle ≤ 2%.

4. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Impedance curve Figure 3).

4-443

ISD = 25A - 1.1 1.5 V ISD = 25A, dISD/dt = 100A/µs - 190 300 ns

RFF70N06

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150

TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC)

Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

1

30

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

100755025

125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

150

0.5

0.2

0.1

, NORMALIZED Z

500

100

10

, DRAIN CURRENT (A)

D

I

1

0.05

JC

θ

THERMAL IMPEDANCE

0.02

0.01

-5

10

OPERATION IN THIS AREA MAY BE LIMITED BY r

1

V

SINGLE PULSE

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

DS(ON)

V

MAX = 60V

DSS

, DRAIN TO SOURCE VOLTAGE (V)

DS

10 100

-3

10

t, RECTANGULAR PULSE DURATION (s)

TC = 25oC

100µs

1ms

10ms 100ms

DC

-2

10

3

10

2

10

, PEAK CURRENT (A)

DM

I

1

10

NOTES: DUTY FACTOR: D = t PEAK TJ = PDM x Z

-1

10

FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS:

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION V

-5

-4

10

P

DM

0

10



=

II



25



= 10V

GS

-3

t, PULSE WIDTH (s)

-2

10

t

1

t

2

1/t2

x R

JC

θ

150 T

--------------------- -

-1

10

θ

–

125

+ T

JC

C

10

C

TC = 25oC

0

10

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-444

RFF70N06

Typical Performance Curves

300

100

75

10

, AVALANCHE CURRENT (A)

If R = 0

AS

I

tAV = (L) (IAS) / (1.3 RATED BV If R ≠ 0

tAV = (L/R) ln [(IAS*R) / (1.3 RATED BV

1

0.01

0.1 1 10 100 t

STARTING TJ = 150oC

DSS

, TIME IN AVALANCHE (ms)

AV

Unless Otherwise Speciﬁed (Continued)

STARTING TJ = 25oC

- VDD)

- VDD) + 1]

DSS

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

150

VDD = 15V PULSE DURATION = 250µs

125

DUTY CYCLE = 0.5% MAX

100

75

50

, DRAIN TO SOURCE CURRENT (A)

25

DS(ON)

0

I

0

2 4 6

V

GS

, GATE TO SOURCE VOLTAGE (V)

-55oC

25oC

150oC

1000

150

VGS = 10V

VGS = 20V

125

100

75

50

, DRAIN CURRENT (A)

D

I

25

0

024 6810

VDS, DRAIN TO SOURCE VOLTAGE (V)

250µs PULSE TEST TC = 25oC

VGS = 4.5V

VGS = 7V

VGS = 6V

VGS = 5V

FIGURE 7. SATURATION CHARACTERISTICS

2.5

PULSE DURATION = 250µs V

= 10V,

GS

= 25A

I

D

2.0

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

8

0

-80 -40 0 40 80 T

, JUNCTION TEMPERATURE (oC)

J

120

160

FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TOSOURCE ON

2.0 VGS = VDS, ID = 250µA

1.5

1.0

NORMALIZED GATE

0.5

THRESHOLD VOLTAGE

0

-80 -40 0 40 80 160120 TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED GATETHRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

4-445

RESISTANCE vs JUNCTION TEMPERATURE

2.0 ID = 250µA

1.5

1.0

0.5

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0

-80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)

FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

RFF70N06

Typical Performance Curves

Unless Otherwise Speciﬁed (Continued)

5000

VGS = 0V, f = 0.1MHz

4000

C C

ISS RSS OSS

= C

≈ CDS + C

GD

GS

= CGS + C

C

3000

2000

C, CAPACITANCE (pF)

1000

0

510152025

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Test Circuits and Waveforms

V

DS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

DUT

+

-

60

45

30

15

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

VDD = BV

I

G(REF)

20

I

G(ACT)

DSS

0.75 BV

0.50 BV

0.25 BV

RL = 1.2Ω I

= 1.0mA

G(REF)

V

= 10V

GS

DSS DSS DSS

t, TIME (µs)

0.75 BV

0.50 BV

0.25 BV

VDD = BV

DSS DSS DSS

I

80

I

DSS

G(REF) G(ACT)

10.0

7.5

5.0

2.5

0

, GATE TO SOURCE VOLTAGE (V)

GS

V

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.

FIGURE 13. NORMALIZED SWITCHING WAVEFORMSFOR

CONSTANT GATE CURRENT

BV

DSS

t

P

I

AS

V

DD

V

DS

V

DD

0V

P

I

AS

0.01Ω

0

t

AV

t

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

t

ON

t

10%

d(ON)

90%

50%

t

10%

r

PULSE WIDTH

V

DS

V

DS

R

DUT

L

+

V

DD

-

0

V

GS

0

V

GS

R

GS

V

GS

t

d(OFF)

90%

FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

t

OFF

50%

t

f

90%

10%

4-446

RFF70N06

Test Circuits and Waveforms

V

DS

V

GS

I

g(REF)

FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS

(Continued)

R

L

DUT

+

V

DD

-

Data Packages - Intersil Power Transistors

TX and TXV Equivalents

1. TX/TXV Equivalent - Standard Data Package Certificate of Compliance

A.

Assembly Flow Chart

B.

Preconditioning

C.

Group A

D.

Group B

E.

Group C

F.

2. TX/TXV Equivalent - Optional Data Package Certificate of Compliance

A.

Assembly Flow Chart

B.

Preconditioning

C.

Group A

D.

Group B

E.

Group C

F.

- Attributes Data Sheet

- Precondition Lot Traveler

- Pre and Post Burn-In Read and Record Data

- Attributes Data Sheet

- Group A Lot Traveler

- Attributes Data Sheet

- Group B Lot Traveler

- Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3)

- Bond Strength Data (Subgroup B3)

- Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6)

- Attributes Data Sheet

- Group C Lot Traveler

- Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6)

- Bond Strength Data (Subgroup C6)

V

DD

VGS= 2V

0

I

g(REF)

0

Q

g(TOT)

V

DS

Q

g(10)

V

GS

Q

g(TH)

VGS = 10V

VGS= 20V

4-447

PSPICE Electrical Model

SUBCKT RFF70N06 2 1 3 ; rev 5/29/95

CA 12 8 5.20e-9 CB 15 14 5.20e-9 CIN 6 8 2.80e-9

DBODY 7 5 DBDMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD

EBREAK 11 7 17 18 68.7 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRESH 6 21 19 8 1 EZTEMPCO 20 6 18 22 1

IT 8 17 1

LDRAIN 2 5 1e-9 LGATE 1 9 6.04e-9 LSOURCE 3 7 2.24e-9

MOS1 16 6 8 8 MSTRONG M = 0.99 MOS2 16 21 8 8 MWEAK M = 0.01

RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 8.03e-3 RGATE 9 20 1 RIN 6 8 1e9 RLDRAIN 2 5 10 RLGATE 1 9 60.4 RLSOURCE 3 7 22.4 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 7.20e-3 RTHRESH 22 8 RTHRESMOD 1 RZTEMPCO 18 19 RZTEMPCOMOD 1

S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD

GATE

1

LGATE

RLGATE

RFF70N06

EZTEMPCO

9

20

RGATE

12

+

S1A

S1B

CA

ESG

18 22

10

+

13814

EGS

6 8

RSCL2

6

RIN

13

+

6 8

DPLCAP

EVTHRESH

+

19

8

CIN

S2A

15

S2B

CB

13

EDS

16

+

5

51

5 8

RSCL1

51

+

ESCL

50 RDRAIN

21

MOS1

14

8

DBREAK

EBREAK

MOS2

RSOURCE

17

11

17 18

LDRAIN

RLDRAIN

+

DBODY

LSOURCE

7

RLSOURCE

RBREAK

RZTEMPCO

IT

RTHRESH

DRAIN

2

3

SOURCE

18

19

VBAT +

22

VBAT 22 19 DC 1

ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*250),3))}

.MODEL DBDMOD D (IS = 1e-12 RS = 11.01e-3 TRS1 = 1.75e-3 TRS2 = -0.06e-6 CJO = 2.70e-9 TT = 7.82e-8 M = 0.45) .MODEL DBREAKMOD D (RS = 88e-3 TRS1 = 1.50e-3 TRS2 = 0) .MODEL DPLCAPMOD D (CJO = 2.60e-9 IS = 1e-30 N = 10 M=0.7) .MODEL MSTRONG NMOS (VTO = 3.85 KP = 47.2 IS = 1e-30 N = 10 TOX = 1L = 1u W = 1u) .MODEL MWEAK NMOS (VTO = 3.09 KP = 47.2 IS = 1e-30 N = 10 TOX = 1L = 1u W = 1u) .MODEL RBREAKMOD RES (TC1 = 1e-3 TC2 = 0) .MODEL RDRAINMOD RES (TC1 = 7e-3 TC2 = 1.90e-5) .MODEL RDSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6) .MODEL RSCLMOD RES (TC1 = 0 TC2 = 0) .MODEL RTHRESHMOD RES (TC1 = -3.10e-3 TC2 = -1e-5) .MODEL RZTEMPCOMOD RES (TC1 = -2.25e-3 TC2 = -5.75e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.0 VOFF= -4.0) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.0 VOFF= -6.0) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= 2.0) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.0 VOFF= -2.0)

.ENDS

NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991.

4-448

RFF70N06

Screening Information

Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table)

.

Delta Tests and Limits (JANTX/JANTXV Equivalent)

PARAMETER SYMBOL TEST CONDITIONS MAX UNITS

Gate to Source Leakage Current Zero Gate Voltage Drain Current On Resistance Gate Threshold Voltage

I

GSS

I

DSS

r

DS(ON)

V

GS(TH)

NOTES:

5. Or 100% of Initial Reading (whichever is greater).

6. Of Initial Reading.

Screening Information

TEST JANTX/JANTXV EQUIVALENT

Gate Stress VGS = 30V, t = 250µs Pind Optional PDA 10% Pre Burn-In Test (Note 7) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25 Steady State Gate Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B

Interim Electrical Tests (Note 7) All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A

Final Electrical Tests (Note 7) MIL-S-19500, Group A, Subgroup 2

NOTE:

7. Test limits are identical pre and post burn-in.

VGS = ±20V, TC = 25oC VDS = 80% Rated Value, TC = 25oC TC = 125oC at Rated I ID = 1.0mA, TC = 25oC

= 80% of Rated Value,

V

GS

= 150oC, Time = 48 hours

T

A

= 80% of Rated Value,

V

DS

= 150oC, Time = 168 hours

T

A

D

±20(Note 5) nA

±25(Note 5) µA ±20% (Note 6) Ω ±20% (Note 6) V

o

C)

Additional Screening Tests

PARAMETER SYMBOL TEST CONDITIONS MAX UNITS

Safe Operating Area Unclamped Inductive Switching Thermal Response Thermal Impedance

SOA

I

∆V ∆V

AS

SD SD

VDS = 48V, t = 10ms V

GS(PEAK)

tH = 100ms; VH = 25V, IH = 4A tH = 500ms; VH = 25V, IH = 4A

= 15V, L = 0.1mH

4.8 A 75 A

220 mV 330 mV

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly,the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Sales Ofﬁce Headquarters

NORTH AMERICA

Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240

4-449

EUROPE

Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05

ASIA

Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029

Datasheet RFF70N06 Datasheet (Intersil)

Specifications and Main Features

Frequently Asked Questions

User Manual