Datasheet RFF60P06 Datasheet (Intersil)

RFF60P06

Data Sheet September 1998

25A†, 60V, 0.030 Ohm, P-Channel Power
MOSFET

The RFF60P06 P-Channel power MOSFET is manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits gives
optimum utilization of silicon, resulting in outstanding
performance. It wasdesignedforusein applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.

Reliability screening is available as either commercial or
TX/TXV equivalent of MIL-S-19500. Contact Intersil
Corporation High-Reliability Marketing group for any desired
deviations from the data sheet.

Formerly developmental type TA09835.
Commercial Version: RFG60P06E.
† Current is limited by the package capability.

Ordering Information

File Number

Features

• 25A, 60V

DS(ON)

= 0.030Ω

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 150

• Reliability Screened

Symbol

D

G

S

®

Model

3975.2

PART NUMBER PACKAGE BRAND

RFF60P06 TO-254AA RFF60P06

NOTE: When ordering, use the entire part number.

Packaging

PACKAGE TAB

(ISOLATED)

CAUTION: Berylia Warning per MIL-S-19500.

JEDEC TO-254AA

GATE

SOURCE

DRAIN

Refer to package specifications.

4-181

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999.

RFF60P06

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFF60P06 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

-60 V

-60 V

±20 V

25 (Note 5)

Refer to UIS Curve

125

1.0

-55 to 150

260

A

W

W/oC

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at -10V Q
Threshold Gate Charge Q

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(-10)VGS
g(TH)VGS

ISS
OSS
RSS

θJC

θJA

= 250µA, VGS = 0V -60 - - V

= VDS, ID = 250µA -2.0 -3.0 -4.5 V

VDS = Rated BV

DSS,VGS

VDS = 0.8 x Rated BV

= 0V - - -25 µA

, VGS = 0V, TC = 125oC - - -250 µA

DSS

VGS = ±20V, TC = 125oC--±100 µA

= 25A, VGS = -10V, (Figure 9) - - 0.030 Ω

VDD = -30V, ID = 25A, RL = 1.2Ω, VGS = -10V
RG = 2.35Ω
(Figures 13, 16, 17)

- - 195 ns

-2570ns

- 50 125 ns

- 80 200 ns

-3075ns

- - 275 ns
= 0 to -20V VDD = -30V, ID = 25A,
= 0 to -10V - - 225 nC
= 0 to -2V - - 15 nC

RL = 1.2Ω
I

= -4.2mA

G(REF)

(Figures 18, 19)

VDS = -25V, VGS = 0V
f = 1MHz

- - 450 nC

- 7200 - pF

- 1800 - pF

- 400 - pF

- - 1.0

o

C/W

--48oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)

4. Current is limited by package capability.

4-182

ISD = -25A - -1.1 -1.5 V

SD

ISD = -25A, dISD/dt = -100A/µs - 130 200 ns

rr

RFF60P06

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150

TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

1

-30

-25

-20

-15

-10

, DRAIN CURRENT (A)

D

I

-5
0

100755025

125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

150

0.5

0.2

0.1

0.1

, NORMALIZED

JC

θ

Z

-500

-100

-10

, DRAIN CURRENT (A)

D

I

-1

0.05

0.02

THERMAL IMPEDANCE

0.01

0.01

-5

10

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

TC = 25oC

= MAX RATED

T

J

-1
V

SINGLE PULSE

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

DS(ON)

V

MAX = -60V

DSS

-10 -100

, DRAIN-TO-SOURCE VOLTAGE (V)

DS

-3

10

t, RECTANGULAR PULSE DURATION (s)

100µs

1ms

10ms

100ms

DC

-2

10

3

-10

2

-10

, PEAK CURRENT (A)

DM

I

1

-10
10

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION V

-5

-4

10

10

t, PULSE WIDTH (s)

P

DM

t

1

t

2

1/t2

x R

–

125

+ T

JC

θ

C

TC = 25oC

0

10

C

1

10

1

10

JC

θ

0

10

150 T



II

= -10V

GS

-3

-2

10

--------------------- -

=



25



-1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-183

RFF60P06

Typical Performance Curves

-200

-100

-75

, AVALANCHE CURRENT (A)

AS

I

-10

If R = 0
t

= (L) (IAS) / (1.3 RATED BV

AV

If R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BV

STARTING TJ = 150oC

0.1 1 10 100
, TIME IN AVALANCHE (ms)

t

AV

Unless Otherwise Specified (Continued)

- VDD)

DSS

- VDD) + 1]

DSS

STARTING TJ = 25oC

-150
VGS = -10V

V

= -20V

GS

-125

-100

-75

-50

, DRAIN CURRENT (A)

D

I

-25

0

0 -2 -4 -6 -8 -10

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = -8V

PULSE DURATION = 250µs
T

= 25oC

C

VGS = -4.5V

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING FIGURE 7. SATURATION CHARACTERISTICS

-150
VDD = -15V

PULSE TEST

-125

PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX

-100

-75

-50

, DRAIN TO SOURCE CURRENT (A)

-25

0

DS(ON)

I

0 -2 -4 -6 -8 -10

, GATE TO SOURCE VOLTAGE (V)

V

GS

-55oC

25oC

150oC

2.5

PULSE DURATION = 250µs, VGS= -10V, ID = 25A

2.0

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-80 -40 0 40 80
T

, JUNCTION TEMPERATURE (oC)

J

VGS = -7V

VGS = -6V

VGS = -5V

120

160

FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

2.0
VGS = VDS, ID = 250µA

1.5

1.0

NORMALIZED GATE

0.5

THRESHOLD VOLTAGE

0

-80 -40 0 40 80 160120
TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGEvs

JUNCTION TEMPERATURE

4-184

RESISTANCE vs JUNCTION TEMPERATURE

2.0
ID = 250µA

1.5

1.0

0.5

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

RFF60P06

Typical Performance Curves

Unless Otherwise Specified (Continued)

8000

C

6000

ISS

VGS = 0V, f = 0.1MHz

= CGS + C

C
C
C

ISS
RSS
OSS

= C

GD

≈ CDS + C

GD

GS

4000

C

OSS

2000

C, CAPACITANCE (pF)

C

RSS

0

0

-5 -10 -15 -20 -25

VDS, DRAIN TO SOURCE VOLTAGE(V)

FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Test Circuit and Waveforms

V

DS

L

-60

-45

-30

-15

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

VDD = BV

I

G(REF)

20

I

G(ACT)

DSS

0.75 BV

0.50 BV

0.25 BV

RL = 1.0Ω
I

G(REF)

V

= -10V

GS

DSS
DSS
DSS

t, TIME (µs)

= 4.2mA

0.75 BV

0.50 BV

0.25 BV

VDD = BV

DSS
DSS
DSS

I

G(REF)

80

I

G(ACT)

-10

DSS

-7.5

-5.0

-2.5

0

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.

FIGURE 13. NORMALIZED SWITCHING WAVEFORMSFOR

CONSTANT GATE CURRENT

t

AV

0

, GATE TO SOURCE VOLTAGE (V)

GS

V

VARY t

TO OBTAIN

P

REQUIRED PEAK I

0V
V

GS

t

P

AS

R

G

DUT

I

AS

0.01Ω

-

V

DD

+

V

DD

I

AS

t

P

BV

DSS

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

t

ON

t

d(ON)

10%

50%

t

r

90%

10%

V

DS

R

L

V

GS

-

V

DD

V

GS

R

GS

DUT

+

0

V

DS

V

GS

0

PULSE WIDTH

t

d(OFF)

V

DS

t

90%

OFF

90%

50%

t

f

10%

FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

4-185

RFF60P06

Test Circuit and Waveforms

V

GS

I

G(REF)

FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS

V

DS

(Continued)

R

L

DUT

­V

DD

+

Data Packages - Intersil Power Transistors

TX and TXV Equivalents

1. TX/TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart

C. Preconditioning - Attributes Data Sheet
D. Group A - Attributes Data Sheet
E. Group B - Attributes Data Sheet

F. Group C - Attributes Data Sheet

2. TX/TXV Equivalent - Optional Data Package

A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet

- Precondition Lot Traveler

- Pre and Post Burn-In Read and Record Data

D. Group A - Attributes Data Sheet

- Group A Lot Traveler

E. Group B - Attributes Data Sheet

- Group B Lot Traveler

- Pre and Post Read and Record Data for Intermittent
Operating Life (Subgroup B3)

- Bond Strength Data (Subgroup B3)

- Pre and Post High Temperature Operating Life
Read and Record Data (Subgroup B6)

F. Group C - Attributes Data Sheet

- Group C Lot Traveler

- Pre and Post Read and Record Data for Intermittent
Operating Life (Subgroup C6)

- Bond Strength Data (Subgroup C6)

0

VGS= -2V

V

DD

0

I

G(REF)

V

Q

g(TH)

-V

GS

Q

g(-10)

Q

g(TOT)

DS

VGS= -10V

VGS= -20V

4-186

RFF60P06

PSPICE Electrical Model

.SUBCKT RFF60P06 2 1 3 REV 9/20/94

CA 12 8 1.01e-8
CB 15 14 1.05e-8
CIN 6 8 6.9e-9

DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD

EBREAK 5 11 17 18 -76.35
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 8 6 1
EVTO 20 6 8 18 1

IT 8 17 1

LDRAIN 2 5 1e-9
LGATE 1 9 7.9e-9
LSOURCE 3 7 4.18e-9

MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01

RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 12.83e-3
RGATE 9 20 1.55
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 3.25e-3
RVTO 18 19 RVTOMOD 1

GATE

RGATE

LGATE

-

ESG

+

EVTO

+

-

18

8

2091

S1A S2A

12 15

13

8

10

DPLCAP

6
8

-

RIN CIN

14
13

S2BS1B

13

+

6
8

-

VTO

EDSEGS

5

RDRAIN

11

17
18

RBREAK

+

-

7

IT

8

EBREAK

MOS2

DBREAK

RSOURCE

16
+

21

MOS1

6

CBCA

14

+

5
8

-

DRAIN

LDRAIN

DBODY

LSOURCE

1817

RVTO

19

-

VBAT

+

2

3

S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD

VBAT 8 19 DC 1
VTO 21 6 -0.83

.MODEL DBDMOD D (IS=1.24e-12 RS=4.72e-3 TRS1=1.43e-3 TRS2=-4.91e-7 CJO=6.98e-9 TT=1.5e-7)
.MODEL DBKMOD D (RS=1.11e-1 TRS1=1.34e-3 TRS2=4.46e-12)
.MODEL DPLCAPMOD D (CJO=15e-10 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.71 KP=31.5 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=9.42e-4 TC2=0)
.MODEL RDSMOD RES (TC1=5.85e-3 TC2=7.69e-6)
.MODEL RVTOMOD RES (TC1=-3.39e-3 TC2=1.07e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.6 VOFF=2.6)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2.6 VOFF=4.6)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.16 VOFF=-3.84)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.84 VOFF=1.16)

.ENDS
NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global

Temperature Options; written by William J. Hepp and C. Frank Wheatley.

4-187

RFF60P06

Screening Information

Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).

Delta Tests and Limits (JANTX/JANTXV Equivalent)

PARAMETER SYMBOL TEST CONDITIONS MAX UNITS

Gate to Source Leakage Current I
Zero Gate Voltage Drain Current I
On Resistance r
Gate Threshold Voltage V

NOTES:

5. Or 100% of Initial Reading (whichever is greater).

6. Of Initial Reading.

GSS

DSS

DS(ON)

GS(TH)

Screening Information

TEST JANTX/JANTXV EQUIVALENT

Gate Stress VGS = -30V, t = 250µs
Pind Optional
PDA 10%
Pre Burn-In Test (Note 1) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC)
Steady State Gate Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B

Interim Electrical Tests (Note 6) All Delta Parameters Listed in the Delta Tests and Limits Table
Steady State Reverse Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A

Final Electrical Tests (Note 6) MIL-S-19500, Group A, Subgroup 2

NOTE:

7. Test limits are identical pre and post burn-in.

VGS = ±20V, TC = 25oC ±20(Note 4) nA
VDS = 80% Rated Value, TC = 25oC ±25 (Note 4) µA
TC = 125oC at Rated I
ID = 1.0mA, TC = 25oC ±20% (Note 5) V

VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours

VDS = 80% of Rated Value,
TA = 150oC, Time = 168 hours

D

±20% (Note 5) Ω

Additional Screening Tests

PARAMETER SYMBOL TEST CONDITIONS MAX UNITS

Safe Operating Area SOA VDS = -48V, t = 10ms 8.0 A
Unclamped Inductive Switching I
Thermal Response ∆V
Thermal Impedance ∆V

AS

SD
SD

V

GS(PEAK)

tH = 100ms; VH = 25V, IH = 4A 142 mV
tH = 500ms; VH = 25V, IH = 4A 182 mV

= -15V, L = 0.1mH 75 A

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

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4-188

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