Datasheet RFD8P05, RFD8P05SM, RFP8P05 Datasheet (Intersil)

RFD8P05, RFD8P05SM, RFP8P05

Data Sheet July 1999

8A, 50V, 0.300 Ohm, P-Channel Power
MOSFETs

These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.

Formerly developmental type TA09832.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD8P05 TO-251AA D8P05
RFD8P05SM TO-252AA D8P05
RFP8P05 TO-220AB RFP8P05

NOTE: Whenordering, use theentirepart number.Addthe suffix9A
to obtain the TO-252AA variant in tape and reel, i.e.,
RFD8P05SM9A.

File Number

Features

• 8A, 50V

DS(ON)

= 0.300Ω

•r

• UIS SOA Rating Curve

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

2384.2

Packaging

DRAIN (FLANGE)

JEDEC TO-220AB JEDEC TO-251AA

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

SOURCE

DRAIN

GATE

4-112

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999.

RFD8P05, RFD8P05SM, RFP8P05

Absolute Maximum Ratings T

= 25oC Unless Otherwise Specified

C

RFD8P05,

RFD8P05SM, RFP8P05 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DSS

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

DM

GS

D

-50 V

-50 V

-8 A

-20 A

±20 V

48 W

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/oC

Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

See Figure 6

-55 to 175

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at -5V Q
Threshold Gate Charge Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(-10)VGS
g(TH)VGS

θJC
θJA

= 250µA, VGS = 0V (Figure 9) -50 - - V

= VDS, ID = 250µA (Figure 8) -2 - -4 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

, TJ = 150oC--25µA

DSS

VGS = ±20V - - ±100 nA

= 8A, VGS = -10V (Figure 7) - - 0.300 Ω

VDD = -25V, I
VGS = -10V

≈ 4A, R

D

= 9.1Ω, RL = 6.25Ω,

G

- - 60 ns

-16- ns

-30- ns

-42- ns

-20- ns

- - 100 ns

= 0 to -20V VDD = -40V, ID = 8A,RL = 5Ω,

I

= -0.3mA

= 0 to -10V - - 40 nC

G(REF)

- - 80 nC

= 0 to -2V - - 2 nC

- - 3.125oC/W
TO-251AA, TO-252AA - - 100oC/W
TO-220AB 62.5oC/W

Source to Drain Diode Specifications T

= 25oC Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t

SD

ISD = -8A - - -1.5 V
ISD = -8A, dISD/dt = 100A/µs - - 125 ns

rr

NOTE:

2. Pulse test: pulse width ≤ 300µs, Duty Cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

4-113

RFD8P05, RFD8P05SM, RFP8P05

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

0

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZEDPOWER DISSIPATION vs CASE

TEMPERATURE

10

DC OPERATION

OPERATION IN THIS
AREA IS LIMITED BY r

1

DS(ON)

150

175

-10

-8

-6

-4

, DRAIN CURRENT (A)

D

I

-2

0

25 50 75 100

TC, CASE TEMPERATURE (oC)

125

150

FIGURE 2. MAXIMUMCONTINUOUSDRAIN CURRENT vs

CASE TEMPERATURE

100

If R = 0
tAV = (L) (IAS) / (1.3 RATED BV

If R ≠ 0

tAV = (L/R) ln [(IAS*R) / (1.3 RATED BV

I

DM

10

- VDD)

DSS

- VDD) + 1]

DSS

STARTING TJ = 25oC
STARTING TJ = 150oC

175

, DRAIN CURRENT (A)

D

I

TC = 25oC
TJ = 175oC

0.1

-1 -10
V

, DRAIN TO SOURCE VOLTAGE (V)

DS

-100

, AVALANCHE CURRENT (A)

AS

I

1

0.1 1 10 100
t

, TIME IN AVALANCHE (ms)

AV

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

-20

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC

-16

-12

-8

, DRAIN CURRENT (A)

D

I

-4

0

0 -2 -4 -6 -10

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = -10V

VGS = -9V

VGS = -8V

VGS = -7V

V

VGS = -5V

VGS = -4V

-8

GS

= -6V

20

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

= 15V

DD

16

12

8

4

, DRAIN TO SOURCE CURRENT (A)

DS(ON)

I

0

0 -6 -9 -12 -15-3

VGS, GATE TO SOURCE VOLTAGE (V)

25oC

-55oC

175oC

FIGURE 5. SATURATION CHARACTERISTICS FIGURE 6. TRANSFER CHARACTERISTICS

4-114

RFD8P05, RFD8P05SM, RFP8P05

Typical Performance Curves

3.0

PULSE DURATION = 80µs
DUTY CYCLE =0.5% MAX

2.5

VGS = -10V, ID = -8A

2.0

1.5

1.0

0.5

NORMALIZED ON RESISTANCE

0

050

TJ, JUNCTION TEMPERATURE (oC)

Unless Otherwise Specified

100

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

2.0
ID = -250µA

1.5

150

1.50
VGS = VDS,ID = -250µA

1.25

1.00

0.75

0.50

NORMALIZED GATE

THRESHOLD VOLTAGE

0.25

200-50

0

-50 500 100 150
TJ, JUNCTION TEMPERATURE (oC)

200

FIGURE 8. NORMALIZEDGATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

1000

800

VGS = 0V, f = 1MHz

= CGS + C

C

ISS

C

= C

RSS

C

OSS

≈ C

GD

DS

GD

+ C

GS

1.0

0.5

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0

-50

050

, JUNCTION TEMPERATURE (oC)

T

J

100

150 200

FIGURE 9. NORMALIZEDDRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

-50

, DRAIN TO SOURCE VOLTAGE (V)
V

VDD = BV

-37.5

-25

-12.5

DS

0

20

DSS

I

G(REF)

I

G(ACT)

C, CAPACITANCE (pF)

FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

GATE

SOURCE

VOLTAGE

= 6.25Ω

R

L

I

G(REF)

V

GS

0.75BV

0.50BV

0.25BV

DRAIN TO SOURCE

VOLTAGE

TIME (µs)

VDD = BV

= 0.3mA

= 10V

DSS
DSS
DSS

80

600

400

200

C

RSS

0

0 -5 -10 -15 -20

VDS, DRAIN TO SOURCE VOLTAGE (V)

-10

DSS

-8

-6

-4
, GATE TO SOURCE VOLTAGE (V)

-2

GS

V

I

G(REF)

I

G(ACT)

0

C

ISS

C

OSS

-25

NOTE: Refer to Application Notes AN7254 and AN7260.

FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT

4-115

Test Circuits and Waveforms

VARY t

TO OBTAIN

P

REQUIRED PEAK I

0V
V

GS

t

P

AS

R

G

RFD8P05, RFD8P05SM, RFP8P05

V

DS

L

-

V

DD

+

DUT

I

AS

0.01Ω

0

V

DD

t

AV

I

AS

V

t

P

BV

DSS

DS

FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT

R

L

DUT

R

V

GS

G

-

V

DD

+

FIGURE 13. UNCLAMPED ENERGY WAVEFORMS

t

ON

t

d(ON)

t

0

V

DS

V

GS

0

10%

r

10%

90%

50%

PULSE WIDTH

FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS

V

DS

R

L

0

Q

g(TH)

t

d(OFF)

V

DS

t

OFF

50%

90%

90%

t

f

10%

VGS= -1V

VGS= -5V

g(TOT)

I

g(REF)

V

GS

­V

DD

+

DUT

-V

GS

Q

g(-5)

V

DD

Q

0

I

g(REF)

FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS

4-116

VGS= -10V

RFD8P05, RFD8P05SM, RFP8P05

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications atan ytime with­out notice. Accordingly,the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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