Datasheet RFD4N06L, RFD4N06LSM Datasheet (Fairchild Semiconductor)

RFD4N06L, RFD4N06LSM

Data Sheet June 1999

4A, 60V, 0.600 Ohm, Logic Level,
N-Channel Power MOSFETs

The RFD4N06L, RFD4N06LSM are N-Channel enhancement
mode silicon gate power field effect transistors specifically
designed for use with logic lev el (5 volt) driving sources in
applications such as programmable controllers, automotiv e
switching, and solenoid drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conduction at gate biases in the 3-5 volt
range, thereby f acilitating true on-off pow er control from logic
circuit supply voltages.

Formerly developmental type TA09520.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD4N06L TO-251AA RFD4N06L
RFD4N06LSM TO-252AA RFD4N06LSM

NOTE: When ordering, use the entire part number.

File Number

Features

• 4A, 60V

DS(ON)

= 0.600Ω

•r

• Design Optimized for 5 Volt Gate Drive

• Can be Driven Directly From Q-MOS, N-MOS,
or TTL Circuits

• SOA is Power Dissipation Limited

o

C Rated Junction Temperature

• 175

• Logic Level Gate

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D

2837.1

Packaging

(FLANGE)

DRAIN

G

S

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE

SOURCE

DRAIN
(FLANGE)

6-189

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFD4N06L, RFD4N06LSM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFD4N06L

RFD4N06LSM UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

DGR

GS

D

DM

D

Derated above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

60 V
60 V

±10V

4A
10 A
30

0.20

-55 to 175

300
260

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 1mA, VGS = 0V 60 - - V

= VDS, ID = 250µA 1 - 2.5 V
TC = 25oC, VDS = 50V, VGS = 0V - - 1 µA
TC = 125oC, VDS = 50V, VGS = 0V - - 50 µA

Gate to Source Leakage Current I
Drain to Source On Voltage (Note 2) V

GSS

DS(ON)ID

VGS = 10V, VDS = 0V - - 100 nA

= 1A, VGS = 5V - - 0.8 V
ID = 2A, VGS = 5V - - 2.0 V
ID = 4A, VGS = 7.5V - - 4.0 V

Drain to Source On Resistance (Note 2) r
Forward Transconductance (Note 2) V
Turn-On Delay Time t

DS(ON)ID

(plateau)

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate Charge at 5V Q
Threshold Gate Charge Q
Thermal Resistance Junction to Case R

r

f

g(5)

g(TH)VGS

θJC

= 1A, VGS = 5V - - 0.600 Ω
VDS = 15V, ID = 4A - - 4.5 V

= 30V, ID = 1A, RGS = 6.25Ω,

VGS = 5V

- - 20 ns

- - 130 ns

- - 40 ns

- - 160 ns

= 0-10V VDD = 48V,

--8nC

ID = 2A,

VGS = 0-5V - - 5 nC

RL = 24Ω

= 0-1V - - 1 nC

--5oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t

NOTES:

2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

6-190

ISD = 1A - - 1.4 V

SD

ISD = 2A, dISD/dt = 100A/µs - 150 - ns

rr

RFD4N06L, RFD4N06LSM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZEDPOWER DISSIPATION vs CASE

TEMPERATURE

10

TJ = MAX RATED

= 25oC

T

C

5

4

3

2

, DRAIN CURRENT (A)

D

I

1

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (oC)

C

FIGURE 2. MAXIMUMCONTINUOUSDRAINCURRENT vs

CASE TEMPERATURE

PULSE DURATION = 80µs

12

T

= 25oC

C

10

VGS = 10V

VGS = 7.5V

8

1.0

OPERATION IN THIS AREA
LIMITED BY r

, DRAIN CURRENT (A)

D

I

0.1
1

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

10

100

6

4

, DRAIN CURRENT (A)

D

I

2

0

01234567

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

8

VDS = 10V

7

PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

6

5

4

3

2

TC = 125oC

, DRAIN TO SOURCE CURRENT (A)

1

DS(ON)

I

0

123456

TC = -40oC

VGS, GATE TO SOURCE VOLTAGE (V)

TC = -40oC

TC = 25oC

TC = 125oC

1.6
VGS = 5V

PULSE DURATION = 80µs

1.4

1.2

1.0

0.8

0.6

, DRAIN TO SOURCE

ON RESISTANCE(Ω)

0.4

DS(ON)

r

0.2

0

0246810

TC = 125oC

TC = 25oC

TC = -40oC

ID, DRAIN CURRENT (A)

VGS = 5V

4.5V
4V

3.5V
3V

2.5V
2V

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TOSOURCE ON RESISTANCE vs DRAIN

CURRENT

6-191

RFD4N06L, RFD4N06LSM

Typical Performance Curves

2

VGS = 5V, ID = 2A

1.5

1

0.5

NORMALIZED DRAIN TO

SOURCE ON RESISTANCE

0

-50 0 50 100
, JUNCTION TEMPERATURE (oC)

T

J

Unless Otherwise Specified (Continued)

150

FIGURE 7. NORMALIZEDDRAINTO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

400

300

200

C, CAPACITANCE (pF)

100

0

01020304050

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

VGS = 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS
OSS

≈ C

GD

+ C

DS

C

ISS

C

OSS

C

RSS

C

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

GD

GD

200

2

VGS = VDS, ID = 250µA

1.5

1

NORMALIZED GATE

0.5

THRESHOLD VOLTAGE

0

-50 0 50 100
, JUNCTION TEMPERATURE (oC)

T

J

150

FIGURE 8. NORMALIZEDGATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

60

45

30

15

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

VDD = BV

I

20

I

DRAIN SOURCE VOLTAGE

G(REF)
G(ACT)

RL = 4Ω

= 0.5mA

I

G(REF)

V

GS

GATE SOURCE

VOLTAGE

DSS

0.75BV

0.50BV

0.25BV

t, TIME (µs)

= 5V

DSS
DSS
DSS

VDD = BV

80

DSS

I

G(REF)

I

G(ACT)

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.

FIGURE 10. NORMALIZEDSWITCHINGWAVEFORMSFOR

CONSTANT GATE CURRENT

10

8

6

4

2

0

200

, GATE TO SOURCE VOLTAGE (V)

GS

V

Test Circuits and Waveforms

R

G

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

6-192

t

ON

t

d(ON)

t

R

L

+

V

DD

-

DUT

V

DS

90%

0

V

GS

10%

0

r

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

RFD4N06L, RFD4N06LSM

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Intersil semiconductor products are sold by description only.IntersilCorporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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