Datasheet RFD3055LE, RFD3055LESM, RFP3055LE Datasheet (Fairchild Semiconductor)

D

G

S

SOURCE

DRAIN (FLANGE)

GATE

DRAIN

RFD3055LE, RFD3055LESM, RFP3055LE

Data Sheet January 2002

11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA49158.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD3055LE TO-251AA F3055L

RFD3055LESM TO-252AA F3055L

RFP3055LE TO-220AB FP3055LE

NOTE: When ordering, use the entire part number. Add the sufﬁx, 9A, to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A.

Features

• 11A, 60V

DS(ON)

= 0.107 Ω

®

Model

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Symbol

Packaging

DRAIN (FLANGE)

JEDEC TO-220AB JEDEC TO-251AA

SOURCE

DRAIN

GATE

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

±

µ

θ

RFD3055LE, RFD3055LESM, RFP3055LE

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Speciﬁed

C

RFD3055LE, RFD3055LESM,

RFP3055LE UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

Derate Above 25

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

DSS

DGR

GS

D

DM

AS

D

, T

J

STG

Refer to Peak Current Curve

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

L

pkg

60 V 60 V

16 V

11

Refer to UIS Curve

38

0.25

-55 to 175

300 260

W/

A

W

o

C

o

C

o

C

o

C

NOTE:

J

= 25

o

1. T

Electrical Speciﬁcations

C to 150

o

C.

o

T

= 25

C, Unless Otherwise Speciﬁed

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

Gate Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On Resistance (Note 2) r

DS(ON)

Turn-On Time t

Turn-On Delay Time t

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

Turn-Off Time t

Total Gate Charge Q

g(TOT)

Gate Charge at 5V Q

Threshold Gate Charge Q

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Thermal Resistance Junction to Case R

Thermal Resistance Junction to Ambient R

DSS

GSS

ON

r

f

OFF

g(5)

g(TH)

ISS

OSS

RSS

JC

JA

I

= 250 µ A, V

D

V

= V

GS

DS

V

= 55V, V

DS

V

= 50V, V

DS

V

= ± 16V - - ± 100 nA

GS

I

= 8A, V

D

V

30V, I

≈

DD

V

= 4.5V, R

GS

(Figures 10, 18, 19)

= 0V 60 - - V

GS

, I

= 250 µ A1-3V

D

= 0V - - 1

GS

= 0V, T

GS

= 5V (Figure 11) - - 0.107 Ω

GS

= 8A,

D

= 32 Ω

GS

= 150

C

o

C - - 250

- - 170 ns

-8 - ns

- 105 - ns

-22 - ns

-39 - ns

- - 92 ns

V

= 0V to 10V V

GS

V

= 0V to 5V - 5.2 6.2 nC

GS

V

= 0V to 1V - 0.36 0.43 nC

GS

V

= 25V, V

DS

= 0V, f = 1MHz

GS

(Figure 14)

= 30V, I

DD

I

g(REF)

D

= 1.0mA

(Figures 20, 21)

= 8A,

- 9.4 11.3 nC

- 350 - pF

- 105 - pF

-23 - pF

- - 3.94

TO-220AB - - 62

TO-251AA, TO-252AA - - 100

o

A

C/W

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Diode Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5).

I

= 8A - 1.25 V

SD

I

= 8A, dI

SD

/dt = 100A/ µ s - 66 ns

SD

5

10

15

25 50 75 100 125 150 175

0

I

D

, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

V

GS

= 10V

V

GS

= 4.5V

100

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

200

10

I

DM

, PEAK CURRENT (A)

t, PULSE WIDTH (s)

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

TC = 25oC

I = I

25

175 - T

C

150

FOR TEMPERATURES ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

VGS = 5V

RFD3055LE, RFD3055LESM, RFP3055LE

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

TC, CASE TEMPERATURE (oC)

Unless Otherwise Speciﬁed

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

175

150

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

CASE TEMPERATURE

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

θJC

10

P

DM

1/t2

x R

0

θJC

t

1

+ T

t

2

C

1

10

FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE

100

10

OPERATION IN THIS

, DRAIN CURRENT (A)

D

I

AREA MAY BE

1

LIMITED BY r

SINGLE PULSE TJ = MAX RATED

0.1

1 10 100

DS(ON)

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

T

= 25oC

C

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

100µs

1ms

10ms

200

I

D

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 3V

VGS = 5V

V

GS

= 10V

VGS = 4V

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

3

6

9

12

15

01234

0

VGS = 3.5V

TC = 25oC

90

120

150

246810

60

ID = 3A

V

GS

, GATE TO SOURCE VOLTAGE (V)

r

DS(ON)

, DRAIN TO SOURCE

ON RESISTANCE (mΩ)

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

T

C

= 25oC

ID = 11A

I

D

= 5A

1.0

1.5

2.0

2.5

-80 -40 0 40 80 120 160 200

0.5

NORMALIZED DRAIN TO SOURCE

TJ, JUNCTION TEMPERATURE (oC)

ON RESISTANCE

VGS = 10V, ID = 11A

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

RFD3055LE, RFD3055LESM, RFP3055LE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

100

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0 t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

DSS

- VDD)

DSS

- VDD) +1]

10

STARTING TJ = 150oC

, AVALANCHE CURRENT (A)

AS

I

1

0.001 0.01 0.1 1 10

tAV, TIME IN AVALANCHE (ms)

STARTING TJ = 25oC

NOTE: Refer to Fairchild Application Notes AN9321 and AN9322

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

15

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

V

= 15V

DD

12

9

6

TJ = 25oC

DRAIN CURRENT (A)

3

D,

I

TJ = 175oC

0

2345

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

FIGURE 7. SATURATION CHARACTERISTICS

FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

150

VGS = 4.5V, VDD = 30V, ID = 8A

100

50

SWITCHING TIME (ns)

0

0 1020304050

RGS, GATE TO SOURCE RESISTANCE (Ω)

FIGURE 10. SWITCHING TIME vs GATE RESISTANCE FIGURE 11. NORMALIZED DRAIN TO SOURCE ON

t

r

t

d(OFF)

t

d(ON)

VOLTAGE AND DRAIN CURRENT

f

RESISTANCE vs JUNCTION TEMPERATURE

1.0

1.1

1.2

-80 -40 0 40 80 120 160 200

0.9

T

J

, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

ID = 250µA

2

4

6

8

10

0246810

0

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 30V

ID = 11A I

D

= 5A

WAVEFORMS IN DESCENDING ORDER:

I

D

= 3A

V

DD

V

DS

BV

DSS

t

P

I

AS

t

AV

0

RFD3055LE, RFD3055LESM, RFP3055LE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

1.2

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

1000

C

= CGS + C

100

C

OSS

≅ C

DS

+ C

ISS

GD

FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

C, CAPACITANCE (pF)

V

= 0V, f = 1MHz

GS

10

0.1 1 10

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Test Circuits and Waveforms

V

DS

VARY t

TO OBTAIN

P

REQUIRED PEAK I

0V

AS

V

GS

t

P

R

G

I

AS

C

RSS

DUT

0.01Ω

= C

GD

60

NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.

FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

L

+

V

DD

-

FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 17. UNCLAMPED ENERGY WAVEFORMS

t

ON

t

d(ON)

t

r

90%

10%

V

DS

90%

10%

t

f

t

d(OFF)

t

OFF

90%

50%

10%

PULSE WIDTH

V

GS

0

V

DD

Q

g(TH)

V

GS

= 2V

Q

g(10)

OR Q

g(5)

V

GS

= 5V FOR

Q

g(TOT)

V

GS

= 20V

V

DS

V

GS

I

g(REF)

0

V

GS

= 1V FOR

L2 DEVICES

L

2

DEVICES

V

GS

= 10V

V

GS

= 10V FOR

L2 DEVICES

RFD3055LE, RFD3055LESM, RFP3055LE

Test Circuits and Waveforms (Continued)

V

DS

R

L

DUT

L

V

GS

R

GS

V

GS

FIGURE 18. SWITCHING TEST CIRCUIT FIGURE 19. RESISTIVE SWITCHING WAVEFORMS

V

DS

+

V

DD

-

V

GS

+

V

DD

-

DUT

I

g(REF)

FIGURE 20. GATE CHARGE TEST CIRCUIT FIGURE 21. GATE CHARGE WAVEFORMS

RFD3055LE, RFD3055LESM, RFP3055LE

PSPICE Electrical Model

.SUBCKT RFD3055LE 2 1 3 ; rev 1/30/95

CA 12 8 3.9e-9 CB 15 14 4.9e-9 CIN 6 8 3.25e-10

DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD

EBREAK 11 7 17 18 67.8 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1

IT 8 17 1

LDRAIN 2 5 1.0e-9 LGATE 1 9 5.42e-9 LSOURCE 3 7 2.57e-9

GATE

1

MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD

RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 3.7e-2 RGATE 9 20 3.37 RLDRAIN 2 5 10 RLGATE 1 9 54.2 RLSOURCE 3 7 25.7 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 2.50e-2 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1

S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD

LGATE

RLGATE

RGATE

9

CA

ESG

EVTEMP

+

18 22

20

S1A

12

13814

S1B

EGS EDS

DPLCAP

10

RSLC2

-

6 8

EVTHRES

+

6

-

S2A

13

S2B

13

+

6 8

-

5

RSLC1

51

+

5

ESLC

51

-

50

RDRAIN

16

21

-

19

8

MMED

MSTRO

CIN

15

CB

8

14

+

5 8

-

DBREAK

11

EBREAK

MWEAK

RSOURCE

RBREAK

17 18

IT

8

RVTHRES

+

17 18

-

7

RLSOURCE

RVTEMP

19

-

+

22

S2B 13 15 14 13 S2BMOD

VBAT 22 19 DC 1

ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*30),3))}

.MODEL DBODYMOD D (IS = 1.75e-13 RS = 1.75e-2 TRS1 = 1e-4 TRS2 = 5e-6 CJO = 5.9e-10 TT = 5.45e-8 N = 1.03 M = 0.6) .MODEL DBREAKMOD D (RS = 6.50e-1 TRS1 = 1.25e-4 TRS2 = 1.34e-6) .MODEL DPLCAPMOD D (CJO = 3.21e-10 IS = 1e-30 N = 10 M = 0.81) .MODEL MMEDMOD NMOS (VTO = 2.02 KP = .83 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.37) .MODEL MSTROMOD NMOS (VTO = 2.39 KP = 14 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 1.78 KP = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 33.7 RS = 0.1) .MODEL RBREAKMOD RES (TC1 = 1.06e-3 TC2 = 0) .MODEL RDRAINMOD RES (TC1 = 1.23e-2 TC2 = 2.58e-5) .MODEL RSLCMOD RES (TC1 = 0 TC2 = 0) .MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 0) .MODEL RVTHRESMOD RES (TC1 = -2.19e-3 TC2 = -4.97e-6) .MODEL RVTEMPMOD RES (TC1 = -1.6e-3 TC2 = 1e-7)

.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4 VOFF= -2.5) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.5 VOFF= -4) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= -0.5)

.ENDS

LDRAIN

RLDRAIN

DBODY

LSOURCE

VBAT

DRAIN

2

SOURCE

3

For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank

Wheatley.

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FACT™ FACT Quiet Series™

STAR*POWER is used under license

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

OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench



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SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™

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VCX™



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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4

Datasheet RFD3055LE, RFD3055LESM, RFP3055LE Datasheet (Fairchild Semiconductor)

Specifications and Main Features

Frequently Asked Questions

User Manual