Keywords
(Harris
Semiconductor, NChannel
Power
MOSFET,
TO251AA,
TO252AA)
Cre-
Features
• 16A, 60V
•r
Temperature Compensating
•
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.047Ω
DS(ON)
o
C Operating Temperature
Components to PC Boards”
PSPICE Model
Ordering Information
P AR T NUMBERP ACKAGEBRAND
RFD16N06TO-251AAF16N06
RFD16N06SMTO-252AAF16N06
NOTE: When ordering, use the entire part number. Add suffix 9A to obtain the TO-252AA variant in tape and reel, i.e., RFD16N06SM9A.
Packaging
JEDEC TO-251AAJEDEC TO-252AA
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
Description
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process which uses feature
sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Formerly developmental type TA09771.
Symbol
DRAIN
GATE
SOURCE
DRAIN
(FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maxim um Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
60V
60V
16
±20V
Refer to UIS Curve
72
0.48
-55 to 175
300
260
A
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETERSYMBOLTEST CONDITIONSMINTYPMAXUNITS
Drain to Source Breakdown VoltageBV
Gate Threshold VoltageV
Zero Gate Voltage Drain CurrentI
DSSID
GS(TH)VGS
DSS
= 250µA, VGS = 0V60--V
= VDS, ID = 250µA2-4V
VDS = Rated BV
VDS = 0.8 x Rated BV
, VGS = 0V--1µA
DSS
DSS
,
--25µA
TC = 150oC
Gate to Source Leakage CurrentI
Drain to Source On Resistance (Note 2)r
DS(ON)ID
Turn-On Timet
Turn-On Delay Timet
d(ON)
Rise Timet
Turn-Off Delay Timet
d(OFF)
Fall Timet
Turn-Off Timet
Total Gate ChargeQ
g(TOT)VGS
Gate Charge at 10VQ
Threshold Gate ChargeQ
Input CapacitanceC
Output CapacitanceC
Reverse Transfer CapacitanceC
Thermal Resistance Junction to CaseR
Thermal Resistance Junction to AmbientR
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/94,7))}
.MODEL DBDMOD D (IS = 2.5e-13 RS = 7.1e-3 TRS1 = 3.04e-3 TRS2 = -10e-6 CJO = 1.12e-9 TT = 5.6e-8)
.MODEL DBKMOD D (RS = 2.51e-1 TRS1 = -6.57e-4 TRS2 = 1.66e-6)
.MODEL DPLCAPMOD D (CJO = 6.1e-10 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 3.96 KP = 16.68 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 1.07e-3 TC2 = -7.19e-7)
.MODEL RDSMOD RES (TC1 = 5.45e-3 TC2 = 1.66e-5)
.MODEL RSCLMOD RES (TC1 = 1.25e-3 TC2 = 17e-6)
.MODEL RVTOMOD RES (TC1 = -5.15e-3 TC2 = -4.83e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.25 VOFF= -3.25)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.25 VOFF= -5.25)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.56 VOFF= 5.56)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 5.56 VOFF= 0.56)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring GlobalTemperature Options; authored by William J. Hepp and C. Frank Wheatley.
5-7
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