Datasheet NTMS4404N Datasheet (ON Semiconductor)

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NTMS4404N

Power MOSFET

30 V, 12 A, Single N−Channel, SO−8

Features

• High Density Power MOSFET with Ultra Low R

Efficiency

• Miniature SO−8 Surface Mount Package Saving Board Space

• I

Specified at Elevated Temperature

DSS

• Diode Exhibits High Speed, Soft Recovery

Applications

• Power Management for Battery Power Products

• Portable Products

• Computers, Printers, PCMCIA Cards

• Cell Phones, Cordless Telephones

DS(on)

for Higher

(BR)DSS

30 V

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TYP

R

DS(on)

9.7 m @ 10 V

15.5 m @ 4.5 V

N−Channel

D

ID MAXV

12 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current (Note 1) State

Power Dissipation
(Note 1)

Continuous Drain
Current (Note 2) State

Power Dissipation
(Note 2)

Pulsed Drain Current tp = 10 s, DC = 2 % I
Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche

Energy (VDD = 20 V, VGS = 5 V, IPK = 7.25 A,
L = 19 mH, R

Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)

= 25 )

G

= 25°C unless otherwise stated)

J

Symbol Value Unit

DSS

GS

Steady

tp 10 s TA = 25°C 12

Steady

TA = 25°C
TA = 70°C 7.6

Steady State

tp 10 s 2.5

TA = 25°C
TA = 70°C 5.6
TA = 25°C P

T

P

E

I

D

D

I

D

D

DM

STG

S

AS

T

L

30 V

20 V

9.6

1.56

7.0

0.83 W

50 A

−55 to
150

6.0 A

500 mJ

260 °C

A

W

A

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 1) R
Junction−to−Ambient – t = 1 0 s (Note 1) R
Junction−to−Ambient – Steady State (Note 2) R

1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad
size (Cu area = 0.412 in sq.)



JA



JA



JA

80
50

150

°C/W

G

S

MARKING DIAGRAM/

PIN ASSIGNMENT

18

E4404N

1

SO−8
CASE 751
STYLE 12

Source
Source
Source

Gate

E4404N= Device Code
L = Assembly Location
Y = Year
WW = Work Week

LYWW

Top View

Drain
Drain
Drain
Drain

ORDERING INFORMATION

Device Package Shipping

NTMS4404NR2 SO−8 2500/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

†

 Semiconductor Components Industries, LLC, 2003

November, 2003 − Rev. 1

1 Publication Order Number:

NTMS4404N/D

NTMS4404N

()

GS

,,

DS

V

GS

V

DS

I

D

V

GS

V

DS

I

D

V

GS

d

ISD/dt

100 A/s

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V
Drain−to−Source Breakdown Voltage

V

Temperature Coefficient
Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

/

VGS = 0 V, ID = 250 A 30 V

VGS = 0 V, VDS = 30 V

VDS = 0 V, VGS = 20 V 100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage
Gate Threshold Temperature Coefficient V
Drain−to−Source On Resistance R

V

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 A 1.0 2.2 3.0 V

VGS = 10 V, ID = 12 A 9.7 11.5

VGS = 4.5 V, ID = 6.0 A 15.5 17.5

Forward Transconductance g

FS

VDS = 15 V, ID = 12 A 17.5 S

CHARGES AND CAPACITANCES

Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q

C

ISS
OSS
RSS

G(TOT)

G(TH)

GS
GD

V

= 0 V, f = 1 MHz, V

GS

VGS = 10 V, VDS = 24 V, ID = 12 A

SWITCHING CHARACTERISTICS, VGS = 10 V (Note 4)

Turn−On Delay Time
Rise Time tr
Turn−Off Delay Time t
Fall Time t

t

d(ON)

d(OFF)

f

V

= 10 V, VD = 24 V, ID = 12 A,

= 10 V,

RG = 2.5 

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)

Turn−On Delay Time
Rise Time tr
Turn−Off Delay Time t
Fall Time t

t

d(ON)

d(OFF)

f

V

= 4.5 V, VD = 24 V, ID = 6.0 A,

= 4.5 V,

RG = 2.5 

DRAIN−SOURCE DIODE CHARACTERISTICS (Note 4)

Forward Diode Voltage

Reverse Recovery Time t
Charge Time t
Discharge Time tb
Reverse Recovery Charge Q

V

SD

RR

a

RR

VGS = 0 V, IS = 6.0 A

VGS = 0 V, d

0 V,

ISD/dt

I

= 6.0 A

S

NOTES:

3. Pulse Test: pulse width  300 s, duty cycle  2%.

4. Switching characteristics are independent of operating junction temperatures.

TJ = 25°C 1.0

TJ = 100°C 5.0

= 24 V

DS

= 24 V,

= 24 V,

= 12 A,

= 6.0 A,

TJ = 25°C 0.80 1.1

TJ = 125°C 0.65

= 100 A/s,

,

25 mV/°C

A

−5.0 mV/°C
m

1975 2500

pF
575 750
180 300

50 70

nC

2.4

7.5
16

15 25

ns
25 50
35 55
15 30

20

ns
80
25
15

V

40 55

ns
23
17

0.05 C

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2

NTMS4404N

TYPICAL PERFORMANCE CURVES

24

VGS = 10 V to 4.2 V

20

16

12

8

DRAIN CURRENT (AMPS)

4

D,

I

0

0

V

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS

Figure 1. On−Region Characteristics

0.05

0.04

0.03

0.02

24

4 V

TJ = 25°C

3.8 V

VDS ≥ 10 V

20

16

12

3.6 V

TJ = 25°C

8

3.4 V

3.2 V

3.0 V

DRAIN CURRENT (AMPS)

D,

I

4

TJ = 100°C

TJ = −55°C

0

4

62

8

10

23

4

5

6

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

ID = 12 A
T

= 25°C

J

0.025

0.02

0.015

0.01

TJ = 25°C

VGS = 4.5 V

VGS = 10 V

0.01

DRAIN−TO−SOURCE RESISTANCE ()

0

210

DS(on),

R

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

798

46

35

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

1.6
ID = 12 A

V

= 10 V

1.4

GS

0.005

DRAIN−TO−SOURCE RESISTANCE ()

0

DS(on),

R

68

10 12

14

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10000

VGS = 0 V

TJ = 150°C

1000

1.2

1

DRAIN−TO−SOURCE

0.8

DS(on),

R

RESISTANCE (NORMALIZED)

0.6

−50 0−25 25

Figure 5. On−Resistance Variation with

75

50 150

TJ, JUNCTION TEMPERATURE (°C)

Temperature

125100 5

, LEAKAGE (A)

100

DSS

I

10

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

TJ = 100°C

10 20

15

vs. Voltage

16 18 20

25

22

24

30

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3

NTMS4404N

TYPICAL PERFORMANCE CURVES

5000

4000

3000

2000

VDS = 0 V

C

iss

C

rss

VGS = 0 V

TJ = 25°C

C

iss

C, CAPACITANCE (pF)

1000

0

15 20 25

V

V

DS

GS

C

oss

C

rss

3010 0 5 105

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

100

VDD = 24 V
I

= 12 A

D

= 10 V

V

GS

t

d(off)

t

f

t

r

15

QT

V

DS

10

5

Q

GS

Q

GD

, GATE−TO−SOURCE VOLTAGE (VOLTS)

GS

V

0

0

10 20 40

, TOTAL GATE CHARGE (nC)

Q

G

30

Figure 8. Gate−T o−Source and

Drain−To−Source Voltage vs. Total Charge

12

VGS = 0 V

10

T

= 25°C

J

8

V

ID = 12 A
T

= 25°C

J

V

30

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

20

GS

10

0

50

t, TIME (ns)

10

1

1 10 100

RG, GATE RESISTANCE (OHMS)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

100

10

VGS = 10 V

1

SINGLE PULSE

= 25°C

T

C

0.1

, DRAIN CURRENT (AMPS)

D

I

0.01

0.1
V

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS

Figure 11. Maximum Rated Forward Biased

t

d(on)

6

4

, SOURCE CURRENT (AMPS)

2

S

I

0

10 ms

1 ms

dc

R

LIMIT

DS(on)

THERMAL LIMIT
PACKAGE LIMIT

1

Safe Operating Area

0.70.5

V

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

SD

0.80.6

Figure 10. Diode Forward Voltage vs. Current

100 s

10

100

0.9

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1000

DUTY CYCLE

NTMS4404N

MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT

100

10

THERMAL RESISTANCE

1

Rthja(t), EFFECTIVE TRANSIENT

0.1

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

1E−05 1E−04 1E−03 1E−02 1E−01

t, TIME (seconds)

Figure 12. Thermal Response − Various Duty Cycles

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

1E+00 1E+01 1E+02

R

(t) = r(t) R

θ

JA

θ

JA

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

− TA = P

J(pk)

(pk)

1

R

(t)

θ

JA

1E+03

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−Y−

−Z−

NTMS4404N

PACKAGE DIMENSIONS

SOIC−8 NB

CASE 751−07

ISSUE AA

NOTES:

−X−
A

58

B

1

S

0.25 (0.010)

4

M

M

Y

K

G

C

SEATING
PLANE

0.10 (0.004)

H

D

0.25 (0.010) Z

M

Y

SXS

N

X 45



M

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER
SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION.

6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.

MILLIMETERS

DIMAMIN MAX MIN MAX

4.80 5.00 0.189 0.197

B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010

J

J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0 8 0 8



N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244

STYLE 12:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

7. DRAIN

8. DRAIN

INCHES

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NTMS4404N/D

6