Page 1
NTMFS4955N
Power MOSFET
30 V, 48 A, Single N−Channel, SO−8 FL
Features
• Low R
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Optimized for 5 V, 12 V Gate Drives
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Note 1)
Power Dissipation
(Note 1)
R
q
JA
Continuous Drain
Current R
(Note 1)
Power Dissipation
≤ 10 s (Note 1)
R
q
JA
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
(Note 2)
q
JA
Continuous Drain
Current R
(Note 1)
Power Dissipation
(Note 1)
R
q
JC
Pulsed Drain
Current
Current Limited by Package TA = 25°C I
Operating Junction and Storage
Temperature
Source Current (Body Diode) I
Drain to Source DV/DT dV/d
Single Pulse Drain−to−Source Avalanche
Energy (T
= 26 Apk, L = 0.1 mH, RG = 25 W)
I
L
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
to Minimize Conduction Losses
DS(on)
= 25°C unless otherwise stated)
J
Parameter Symbol Value Unit
DSS
GS
TA = 25°C
q
JA
≤ 10 s
q
JA
Steady
State
q
JA
q
JC
TA = 25°C, tp = 10 ms
= 25°C, VDD = 24 V, VGS = 10 V,
J
TA = 100°C 10.5
TA = 25°C P
TA = 25°C
TA = 100°C 15.9
TA = 25°C P
TA = 25°C
TA = 100°C 6.2
TA = 25°C P
TC = 25°C
TC =100°C 30
TC = 25°C P
I
I
I
I
I
DM
Dmax
TJ,
T
STG
E
AS
T
D
D
D
D
D
D
D
D
S
t
L
30 V
±20 V
16.7
2.70 W
25.2
6.16 W
9.7
0.92 W
48
23.2 W
210 A
100 A
−55 to
+150
21 A
6.0 V/ns
34 mJ
260 °C
A
A
A
A
°C
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V
(BR)DSS
30 V
G (4)
R
MAX ID MAX
DS(ON)
5.6 mW @ 10 V
8.5 mW @ 4.5 V
D (5,6)
S (1,2,3)
N−CHANNEL MOSFET
48 A
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
4955N
S
AYWZZ
S
G
D
ORDERING INFORMATION
Device Package Shipping
NTMFS4955NT1G SO−8 FL
(Pb−Free)
NTMFS4955NT3G SO−8 FL
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1500 /
Tape & Reel
5000 /
Tape & Reel
D
D
†
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 7
1 Publication Order Number:
NTMFS4955N/D
Page 2
NTMFS4955N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
R
q
JC
R
q
JA
R
q
JA
R
q
JA
5.4
46.3
136.2
20.3
°C/W
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
J
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
(transient)
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
V
(BR)DSS
V
(BR)DSSt
V
(BR)DSS
T
DSS
GSS
VGS = 0 V, ID = 250 mA
VGS = 0 V, I
T
= 25°C, t
case
/
J
VGS = 0 V,
V
= 24 V
DS
VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient V
Drain−to−Source On Resistance R
V
GS(TH)
GS(TH)/TJ
DS(on)
VGS = VDS, ID = 250 mA
VGS = 10 V
VGS = 4.5 V
Forward Transconductance g
FS
VDS = 1.5 V, ID = 15 A 52 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Capacitance Ratio C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Total Gate Charge Q
C
ISS
OSS
RSS
RSS
C
ISS
G(TOT)
G(TH)
GS
GD
G(TOT)
VGS = 0 V, f = 1 MHz, VDS = 15 V
/
VGS = 0 V, VDS = 15 V, f = 1 MHz 0.11 0.22
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 10 V, VDS = 15 V; ID = 30 A 21.5 nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t
t
d(ON)
r
d(OFF)
f
VGS = 4.5 V, VDS = 15 V,
= 15 A, RG = 3.0 W
I
D
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
30 V
D(aval)
transient
= 11.0 A,
= 100 ns
34 V
TJ = 25°C 1.0
TJ = 125°C 10
1.2 1.7 2.2 V
ID = 30 A 4.5 5.6
ID = 15 A 4.5
ID = 30 A 6.8 8.5
ID = 15 A 6.7
21
mV/°C
mA
3.9 mV/°C
mW
1264
483
pF
143
10.8
2.0
3.8
nC
4.2
9.5
32.7
16.4
ns
6.2
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2
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NTMFS4955N
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
J
Parameter UnitMaxTypMinTest ConditionSymbol
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t
t
d(ON)
r
d(OFF)
f
VGS = 10 V, VDS = 15 V,
= 15 A, RG = 3.0 W
I
D
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
VGS = 0 V,
IS = 30 A
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
RR
a
b
RR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance L
Gate Inductance L
Gate Resistance R
L
S
D
G
G
TA = 25°C
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7.4
27.5
20.3
4.1
TJ = 25°C 0.86 1.1
TJ = 125°C 0.75
25.8
12.4
13.4
13.6 nC
1.00 nH
0.005 nH
1.84 nH
1.0 2.2
ns
V
ns
W
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NTMFS4955N
TYPICAL CHARACTERISTICS
120
10 V
110
100
90
80
70
60
50
40
, DRAIN CURRENT (A)
30
D
I
20
10
0
4.5 V
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
, DRAIN−TO−SOURCE RESISTANCE (W)
0
DS(on)
R
Figure 3. On−Resistance vs. V
TJ = 25°C
ID = 30 A
VGS (V) ID, DRAIN CURRENT (A)
4.0 V
3.5 V
3.0 V
VGS = 2.5 V
543210
981076543
GS
120
110
100
90
80
VDS = 10 V
70
60
50
40
, DRAIN CURRENT (A)
30
D
I
20
10
0
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.004
, DRAIN−TO−SOURCE RESISTANCE (W)
0.003
DS(on)
R
T = 25°C
Figure 4. On−Resistance vs. Drain Current and
TJ = −55°C
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
Gate Voltage
TJ = 125°C
11040 9080
54321
120100706050302010
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
, DRAIN−TO−SOURCE
0.9
0.8
DS(on)
R
RESISTANCE (NORMALIZED)
0.7
0.6
ID = 30 A
= 10 V
V
GS
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
10,000
1,000
, LEAKAGE (nA)
100
DSS
I
150
1251007550250−25−50
10
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4
TJ = 150°C
TJ = 125°C
TJ = 85°C
VGS = 0 V
30252015105
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Page 5
NTMFS4955N
TYPICAL CHARACTERISTICS
1600
1400
1200
1000
800
600
400
C, CAPACITANCE (pF)
200
0
1000
100
11
C
iss
TJ = 25°C
= 0 V
V
GS
10
9
QT
8
7
6
C
oss
5
Qgs Qgd
4
3
C
rss
302520151050
2
, GATE−TO−SOURCE VOLTAGE (V)
1
GS
0
V
810 16 20
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
VGS = 0 V
VGS = 10 V
= 15 V
V
DD
I
= 15 A
D
t
d(off)
t
f
t
r
25
20
15
TJ = 25°C
VGS = 10 V
= 15 V
V
DD
I
= 30 A
D
221814126420
t, TIME (ns)
10
1
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
1000
0 V < VGS < 10 V
Single Pulse
100
T
C
= 25°C
10
1
R
, DRAIN CURRENT (A)
D
I
0.1
Limit
DS(on)
Thermal Limit
Package Limit
0.01
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
vs. Gate Resistance
Safe Operating Area
t
d(on)
10 ms
100 ms
1 ms
10 ms
dc
10
, SOURCE CURRENT (A)
S
I
5
0
100101
40
36
32
28
24
20
16
12
8
, SINGLE PULSE DRAIN−TO−
AS
4
E
SOURCE AVALANCHE ENERGY (mJ)
0
1001010.10.01
TJ = 125°C
TJ = 25°C
0.90.8 1.00.70.60.50.40.3
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
Figure 10. Diode Forward Voltage vs. Current
ID = 26 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
150125100755025
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NTMFS4955N
TYPICAL CHARACTERISTICS
100
D = 0.5
0.2
10
0.1
0.05
0.02
1
r(t)
(°C/W)
0.01
0.1
SINGLE PULSE
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, TIME (s)
Figure 13. Thermal Response
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Page 7
0.10 C
0.10 C
C
0.05 c
PIN 5
(EXPOSED PAD)
D
2
D1
1234
TOP VIEW
SIDE VIEW
b
8X
A0.10 B
L
14
E2
G
D2
BOTTOM VIEW
2 X
e/2
0.20 C
A
E1
E
2
A
DETAIL A
K
M
L1
NTMFS4955N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
B
2 X
0.20 C
4 X
q
c
3 X
e
A1
C
SEATING
PLANE
DETAIL A
SOLDERING FOOTPRINT*
3X 4X
1.270
0.965
1.330
2X
0.495
3.200
2X
1.530
4.560
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
MILLIMETERS
A 0.90 1.00
b 0.33 0.41
c 0.23 0.28
D 5.15 BSC
E 6.15 BSC
e 1.27 BSC
G 0.51 0.61
K 1.20 1.35
L 0.51 0.61
M 3.00 3.40
q 0 −−−
_
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
0.750
2X
0.905
DIM MIN NOM
A1 0.00 −−−
D1 4.70 4.90
D2 3.80 4.00
E1 5.70 5.90
E2 3.45 3.65
L1 0.05 0.17
STYLE 1:
PIN 1. SOURCE
4X
1.000
4.530
0.475
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
0.20
3.80
12
_
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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NTMFS4955N/D
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