Datasheet NTMFS4835NT1G Datasheet (ON)

NTMFS4835N

Power MOSFET

30 V, 104 A, Single N−Channel, SO−8FL

Features

• Low R

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These are Pb−Free Devices

Applications

• Refer to Application Note AND8195/D

• CPU Power Delivery

• DC−DC Converters

• Low Side Switching

to Minimize Conduction Losses

DS(on)

V

(BR)DSS

30 V

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R

MAX ID MAX

DS(ON)

3.5 mW @ 10 V

5.0 mW @ 4.5 V

D (5,6)

104 A

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R (Note 1)

Power Dissipation R

Continuous Drain Current R (Note 2)

Power Dissipation R

Continuous Drain Current R (Note 1)

Power Dissipation R

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode) I

Drain to Source DV/DT dV/d

Single Pulse Drain−to−Source Avalanche Energy T I

L

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

q

JA

(Note 1)

q

JA

q

JA

(Note 2)

q

JA

q

JC

(Note 1)

q

JC

= 25°C, VDD = 50 V, VGS = 10 V,

J

= 28 Apk, L = 1.0 mH, RG = 25 W

= 25°C unless otherwise stated)

J

TA = 25°C

TA = 85°C 14

TA = 25°C P

TA = 25°C

Steady

State

TA = 85°C 9.0

TA = 25°C P

TC = 25°C

TC = 85°C 75

TC = 25°C P

TA = 25°C,

= 10 ms

t

p

T

I

TJ,

E

DSS

GS

I

D

I

D

I

D

DM

STG

S

AS

T

L

t

30 V

±20 V

20

2.27 W

12

0.89 W

104

62.5 W

208 A

−55 to +150

52 A

6 V/ns

392 mJ

260 °C

A

°C

G (4)

S (1,2,3)

N−CHANNEL MOSFET

MARKING DIAGRAM

D

S

4835N

1

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

S

AYWZZ

S

G

D

ORDERING INFORMATION

Device Package Shipping

NTMFS4835NT1G SO−8FL

(Pb−Free)

NTMFS4835NT3G SO−8FL

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1500 /

Tape & Reel

5000 /

Tape & Reel

D

†

May, 2012 − Rev. 7

1 Publication Order Number:

NTMFS4835N/D

NTMFS4835N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain)

Junction−to−Ambient – Steady State (Note 3)

Junction−to−Ambient – Steady State (Note )

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size.

R

q

JC

R

q

JA

R

q

JA

2.0

55.1

140.1

°C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS

T

DSS

GSS

VGS = 0 V, ID = 250 mA

/

J

VGS = 0 V,

V

= 24 V

DS

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

V

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V to

11.5 V

VGS = 4.5 V

Forward Transconductance g

FS

VDS = 15 V, ID = 15 A 21 S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

G(TOT)

VGS = 0 V, f = 1 MHz, VDS = 12 V

VGS = 4.5 V, VDS = 15 V; ID = 30 A

VGS = 11.5 V, VDS = 15 V;

I

= 30 A

D

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

d(ON)

r

d(OFF)

f

VGS = 4.5 V, VDS = 15 V, ID = 15 A,

= 3.0 W

R

G

VGS = 11.5 V, VDS = 15 V,

= 15 A, RG = 3.0 W

I

D

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

30 V

22.4

TJ = 25 °C 1.0

TJ = 125°C 10

1.5 1.9 2.5 V

5.3 mV/°C

ID = 30 A 2.9 3.5

ID = 15 A 2.5

ID = 30 A 4.3 5.0

ID = 15 A 3.9

3100

670

360

22 39

4.7

8.3

8.8

52

16

31

22

13

10

23

30

10

mV/°C

mA

mW

pF

nC

ns

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2

NTMFS4835N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter UnitMaxTypMinTest ConditionSymbol

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V,

I

= 30 A

S

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 30 A

S

PACKAGE PARASITIC VALUES

Source Inductance

Drain Inductance L

Gate Inductance L

Gate Resistance R

L

S

D

G

TA = 25°C

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

TJ = 25°C 0.77 1.0

TJ = 125°C 0.70

27 50

15

12

18 nC

0.65 nH

0.005 nH

1.84 nH

1.3 5.0

V

ns

W

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3

NTMFS4835N

TYPICAL PERFORMANCE CURVES

170

150

VGS = 5.0 to 10 V

130

110

90

70

50

, DRAIN CURRENT (AMPS)

30

D

I

10

0

021

V

DS

3

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.030

0.025

0.020

0.015

170

4.0 V 150

VDS ≥ 10 V

130

TJ = 25°C

3.5 V 110

90

3.2 V

70

3.0 V

2.8 V

2.6 V

40

5

768910

50

, DRAIN CURRENT (AMPS)

30

D

I

10

0

TJ = 25°C

TJ = −55°CTJ = 125°C

1

V

, GATE−TO−SOURCE VOLTAGE (VOLTS)

GS

23

46

0.008

ID = 30 A T

= 25°C

J

0.007

0.006

0.005

TJ = 25°C

VGS = 4.5 V

0.004

5

0.010

0.005

, DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on)

2

R

4

615

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 3. On−Resistance vs. Gate−to−Source

2.0

ID = 30 A V

= 10 V

GS

1.5

1.0

(NORMALIZED)

0.5

, DRAIN−TO−SOURCE RESISTANCE

0

DS(on)

−50 250−25 50 75

R

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

Voltage

0.003 VGS = 11.5 V

0.002

0.001

, DRAIN−TO−SOURCE RESISTANCE (W)

0

8

10 12

DS(on)

R

10

20

25 30 55

35

40 5045

60

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

100,000

VGS = 0 V

10,000

TJ = 150°C

1,000

, LEAKAGE (nA)

DSS

I

100

TJ = 125°C

10

100

125

150

8

1612 304

20

24

28

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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4

NTMFS4835N

TYPICAL PERFORMANCE CURVES

5000

4500

C

iss

TJ = 25°C

4000

3500

3000

C

iss

2500

2000

C

rss

1500

C, CAPACITANCE (pF)

1000

500

C

oss

0

10 25

15 0 10 15

55

V

GS

V

DS

20

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

VDS = 15 V I

= 15 A

D

= 11.5 V

V

100

t, TIME (ns)

GS

10

t

d(off)

t

f

t

r

t

d(on)

30

12

Q

T

10

V

DS

V

GS

8

6

Q

4

Q

gs

gd

2

0

, GATE−TO−SOURCE VOLTAGE (VOLTS)

V

GS

0

155

2010 25 504540

Q

, TOTAL GATE CHARGE (nC)

G

30

35

Figure 8. Gate−To−Source and Drain−To−Source

Voltage vs. Total Charge

30

VGS = 0 V

25

TJ = 25°C

20

15

10

ID = 30 A T

= 25°C

J

55

20

18

16

14

12

10

8

6

4

2

0

V

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

1

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

1000

100

10

VGS = 20 V SINGLE PULSE TC = 25°C

1

, DRAIN CURRENT (AMPS)

D

I

0.1

0.1 1 100 V

R

LIMIT

DS(on)

THERMAL LIMIT PACKAGE LIMIT

10

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

10 ms

100 ms

1 ms

10 ms dc

, SOURCE CURRENT (AMPS)

5

S

I

0

0.5 0.6

0.4 1.1

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

V

SD

0.7 0.8

Figure 10. Diode Forward Voltage vs. Current

400

360

320

280

240

200

160

120

80

AVALANCHE ENERGY (mJ)

40

, SINGLE PULSE DRAIN−TO−SOURCE

0

AS

25

E

50 75

, STARTING JUNCTION TEMPERATURE (°C)

T

J

100 125

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

0.9 1.0

ID = 28 A

150

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5

1000

100

10

, DRAIN CURRENT (AMPS)

D

I

NTMFS4835N

TYPICAL PERFORMANCE CURVES

25°C

100°C

125°C

1

10

PULSE WIDTH (ms)

1000

100001 100

Figure 13. Avalanche Characteristics

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6

0.10 C

0.05

c

PIN 5

(EXPOSED PAD)

D

2

D1

1234

TOP VIEW

SIDE VIEW

b

8X

A0.10 BC

L

14

E2

2 X

e/2

0.20

A

E1

E

2

A

DETAIL A

K

M

L1

NTMFS4835N

PACKAGE DIMENSIONS

DFN5 5x6, 1.27P

(SO−8FL)

CASE 488AA

ISSUE G

C

B

2 X

0.20 C

c

DETAIL A

SOLDERING FOOTPRINT*

3X 4X

1.270

0.965

1.330

2X

0.495

3.200

3 X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

4 X

q

A1

C

e

SEATING

PLANE

0.750

2X

0.905

4X

1.000

STYLE 1:

PIN 1. SOURCE

MILLIMETERS

A 0.90 1.00

A1 0.00 −−−

b 0.33 0.41

c 0.23 0.28

D 5.15 BSC D1 4.50 4.90 D2 3.50 −−−

E 6.15 BSC E1 5.50 5.80 E2 3.45 −−−

e 1.27 BSC G 0.51 0.61 K 1.20 1.35 L 0.51 0.61

L1 0.05 0.17

M 3.00 3.40

q 0 −−−

_

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

MAX

1.10

0.05

0.51

0.33

5.10

4.22

6.10

4.30

0.71

1.50

0.71

0.20

3.80 12

_

4.530

0.475

G

D2

BOTTOM VIEW

2X

1.530

4.560

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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NTMFS4835N/D

7

Datasheet NTMFS4835NT1G Datasheet (ON) [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual