Page 1
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0186
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 0.9 GHz
• High Gain:
17.5 dB Typical at 0.5 GHz
• Unconditionally Stable
(k>1)
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
Note:
1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor
Devices”.
[1]
Typical Biasing Configuration
R
bias
The MSA-0186 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in commercial and
industrial applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
V
> 7 V
CC
86 Plastic PackageDescription
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
C
block
= 5 V
V
d
5965-9694E
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MSA-0186 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 40 mA
Power Dissipation
[2,3]
200 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 8.7 mW/° C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
CASE
= 25°C.
> 127° C.
C
[1]
Thermal Resistance
θjc = 115°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 17 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 18.5
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 0.5 GHz 15.5 17.5
∆G
f
3 dB
VSWR
Gain Flatness f = 0.1 to 0.6 GHz dB ±0.7
P
3 dB Bandwidth GHz 0.9
Input VSWR f = 0.1 to 3.0 GHz 1.3:1
Output VSWR f = 0.1 to 3.0 GHz 1.2:1
NF 50 Ω Noise Figure f = 0.5 GHz dB 5.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 1.5
Third Order Intercept Point f = 0.5 GHz dBm 14.0
Group Delay f = 0.5 GHz psec 200
Device Voltage V 4.0 5.0 6.0
dV/dT Device Voltage Temperature Coefficient mV/°C –9.0
Note:
1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number No. of Devices Container
MSA-0186-BLK 100 Antistatic Bag
MSA-0186-TR1 1000 7" Reel
For more information refer to PACKAGING section, “Tape and Reel
Packaging for Semiconductor Devices.”
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Page 3
MSA-0186 Typical Scattering Parameters (Z
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
= 17 mA)
d
S
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .05 148 18.5 8.39 171 –23.0 .071 4 .08 –7
0.2 .06 124 18.3 8.22 162 –22.8 .073 9 .08 –14
0.3 .07 103 18.1 8.03 154 –22.6 .074 13 .07 –24
0.4 .08 89 17.7 7.67 146 –22.2 .078 14 .07 –31
0.5 .08 76 17.4 7.42 139 –21.9 .081 17 .06 –39
0.6 .09 66 17.0 7.06 131 –21.4 .085 21 .06 –47
0.8 .10 50 16.2 6.47 119 –20.5 .094 25 .07 –67
1.0 .10 35 15.3 5.83 107 –19.6 .105 29 .07 –89
1.5 .07 12 13.2 4.57 83 –17.7 .131 30 .08 –165
2.0 .02 –12 11.3 3.67 64 –16.1 .157 27 .08 156
2.5 .06 165 9.8 3.09 50 –14.8 .182 24 .08 134
3.0 .14 150 8.3 2.60 34 –13.9 .202 19 .09 124
3.5 .23 137 7.0 2.24 20 –13.4 .213 12 .09 117
4.0 .31 125 5.7 1.93 6 –13.0 .223 5 .09 114
5.0 .45 105 3.3 1.46 –17 –12.7 .231 –5 .09 132
A model for this device is available in the DEVICE MODELS section.
22
Typical Performance, T
(unless otherwise noted)
24
Gain Flat to DC
21
18
15
(dB)
12
p
G
9
6
Id= 13 mA
Id= 17 mA
3
Id= 25 mA
0
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 17 mA.
6
Id = 20 mA
4
Id = 17 mA
2
(dBm)
1 dB
0
P
Id = 13 mA
–2
= 25° C
A
25
TC = +85°C
TC = +25°C
20
TC = –25°C
15
(mA)
d
I
10
5
0
0 234 561
Vd (V)
Figure 2. Device Current vs. Voltage.
7.0
Id = 13 mA
Id = 17 mA
Id = 20 mA
6.5
6.0
NF (dB)
5.5
18
17
(dB)
p
G
16
7
6
5
4
3
(dBm)
2
1 dB
1
P
0
–25 0 +25 +55 +85
TEMPERATURE (°C)
G
P
NF
P
7
6
5
4
1 dB
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.5 GHz,
I
=17 mA.
d
NF (dB)
–4
0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
5.0
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
Compression vs. Frequency.
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Page 4
86 Plastic Package Dimensions
0.51 ± 0.13
(0.020 ± 0.005)
RF INPUT
1.52 ± 0.25
(0.060 ± 0.010)
0.66 ± 0.013
(0.026 ± 0.005)
0.30 MIN
(0.012 MIN)
GROUND
45°
1
GROUND
2.67 ± 0.38
(0.105 ± 0.15)
(0.085 ± 0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
A01
5° TYP.
2.16 ± 0.13
4
RF OUTPUT
AND DC BIAS
3
2.34 ± 0.38
(0.092 ± 0.015)
2
0.203 ± 0.051
(0.006 ± 0.002)
8° MAX
0° MIN
C
L
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