
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0185
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 1.0 GHz
• High Gain:
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military
applications.
17.5 dB Typical at 0.5 GHz
• Unconditionally Stable
(k>1)
• Low Cost Plastic Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
Description
The MSA-0185 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
C
block
= 5 V
V
d
V
CC
> 7 V
MAX
85 Plastic Package
,
5965-9693E
6-258

MSA-0185 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 40 mA
Power Dissipation
[2,3]
200 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 9.5 mW/° C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
CASE
= 25°C.
> 129° C.
C
[1]
Thermal Resistance
θjc = 105°C/W
[2,4]
:
MSA-0185 Electrical Specifications
Symbol Parameters and Test Conditions: Id = 17 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 18.5
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 0.5 GHz 16.0 17.5
∆G
P
f
3 dB
VSWR
Gain Flatness f = 0.1 to 0.6 GHz dB ±0.6
3 dB Bandwidth GHz 1.0
Input VSWR f = 0.1 to 3.0 GHz 1.3:1
Output VSWR f = 0.1 to 3.0 GHz 1.3:1
NF 50 Ω Noise Figure f = 0.5 GHz dB 5.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 1.5
Third Order Intercept Point f = 0.5 GHz dBm 14.0
Group Delay f = 0.5 GHz psec 150
Device Voltage V 4.0 5.0 6.0
dV/dT Device Voltage Temperature Coefficient mV/°C –9.0
Note:
1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current
is on the following page.
6-259

MSA-0185 Typical Scattering Parameters (Z
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
= 17 mA)
d
S
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .06 166 18.4 8.36 172 –22.6 .074 3 .07 –17
0.2 .06 149 18.3 8.20 165 –22.0 .079 8 .07 –28
0.3 .06 133 18.1 8.01 158 –22.2 .078 11 .08 –43
0.4 .06 120 17.8 7.78 151 –21.9 .080 14 .09 –56
0.5 .06 105 17.5 7.53 144 –21.4 .085 18 .09 –68
0.6 .06 94 17.2 7.23 138 –21.4 .085 19 .09 –75
0.8 .07 72 16.5 6.66 127 –20.7 .092 24 .10 –89
1.0 .07 49 15.7 6.09 116 –19.7 .104 27 .10 –100
1.5 .07 12 13.8 4.89 94 –18.0 .126 32 .11 –120
2.0 .04 –13 12.0 3.98 76 –16.2 .154 31 .11 –134
2.5 .03 –84 10.6 3.38 65 –15.1 .175 33 .11 –138
3.0 .07 –159 9.2 2.88 52 –14.2 .194 29 .09 –146
3.5 .12 –174 8.0 2.50 38 –13.3 .216 24 .08 –135
4.0 .16 170 6.8 2.19 26 –12.8 .229 19 .08 –120
4.5 .21 150 5.7 1.93 14 –12.3 .242 13 .08 –107
5.0 .25 126 4.7 1.72 3 –12.2 .245 –6 .07 –110
A model for this device is available in the DEVICE MODELS section.
22
MSA-0185 Typical Performance, T
(unless otherwise noted)
21
18
Gain Flat to DC
15
12
(dB)
p
G
9
6
3
0
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
18
17
(dB)
p
G
16
7
6
5
4
3
(dBm)
2
1 dB
1
P
0
–25 0 +25 +55 +85
= 25°C, Id = 17 mA.
A
G
NF
P
TEMPERATURE (°C)
P
1 dB
7
6
5
4
NF (dB)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.5 GHz, Id = 17 mA.
25
20
15
(mA)
d
I
10
5
0
Figure 2. Device Current vs. Voltage.
6
4
2
(dBm)
1 dB
0
P
–2
–4
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
= 25° C
A
25
TC = +85°C
TC = +25°C
TC = –25°C
0 234 561
Vd (V)
(dB)
p
G
20
15
10
5
0
10 20 25 3015
Id (mA)
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
Figure 3. Power Gain vs. Current.
7.0
6.5
6.0
NF (dB)
5.5
5.0
Id = 13 mA
Id = 17 mA
Id = 20 mA
FREQUENCY (GHz)
Id = 20 mA
Id = 17 mA
Id = 13 mA
0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
6-260

85 Plastic Package Dimensions
.020
.51
A01
.085
2.15
5° TYP.
.286 ± .030
7.36 ± .76
4
0.143 ± 0.015
3.63 ± 0.38
3
RF OUTPUT
AND BIAS
Notes:
(unless otherwise specified)
1. Dimensions are
2
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.006 ± .002
.15 ± .05
45°
1
.060 ± .010
1.52 ± .25
.07
0.43
GROUND
RF INPUT
GROUND
in
mm
6-261