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Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0170
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 1.3 GHz
• High Gain:
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applications.
18.5 dB Typical at 0.5 GHz
• Unconditionally Stable
(k>1)
• Hermetic Gold-ceramic
Microstrip Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
Description
The MSA-0170 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic high
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
reliability package. This MMIC is
Typical Biasing Configuration
R
bias
70 mil Package
,
MAX
V
> 7 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
C
block
= 5 V
V
d
5965-9692E
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MSA-0170 Absolute Maximum Ratings
Parameter Absolute Maximum
[1]
Device Current 40 mA
Power Dissipation
[2,3]
200 mW
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 8 mW/° C for T
4. The small spot size of this technique results in a higher, though more accurate determination of θ
= 25°C.
CASE
> 175° C.
C
methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Thermal Resistance
θjc = 125°C/W
[2,4]
than do alternate
jc
:
MSA-0170 Electrical Specifications
Symbol Parameters and Test Conditions: Id = 17 mA, Z
G
P
∆G
f
3 dB
VSWR
Power Gain (|S21|2) f = 0.1 GHz dB 18.0 19.0
Gain Flatness f = 0.1 to 0.7 GHz dB ±0.6
P
3 dB Bandwidth GHz 1.3
Input VSWR f = 0.1 to 3.0 GHz 1.3:1
[1]
, T
= 25° C
A
= 50 Ω Units Min. Typ. Max.
O
Output VSWR f = 0.1 to 3.0 GHz 1.3:1
NF 50 Ω Noise Figure f = 0.5 GHz dB 5.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 1.5
Third Order Intercept Point f = 0.5 GHz dBm 14.0
Group Delay f = 0.5 GHz psec 150
Device Voltage V 4.5 5.0 5.5
dV/dT Device Voltage Temperature Coefficient mV/°C –9.0
Note:
1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current
is on the following page.
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MSA-0170 Typical Scattering Parameters (Z
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
= 17 mA)
d
S
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .08 171 19.0 8.88 173 –22.7 .073 2 .10 –13
0.2 .07 161 18.9 8.77 167 –22.5 .075 6 .11 –27
0.3 .07 152 18.7 8.64 160 –22.3 .077 8 .10 –39
0.4 .06 143 18.5 8.45 153 –22.4 .076 11 .11 –49
0.5 .05 133 18.3 8.23 147 –22.0 .079 13 .11 –59
0.6 .04 115 18.0 7.98 141 –21.8 .081 17 .12 –67
0.8 .03 79 17.5 7.46 130 –21.2 .087 20 .12 –83
1.0 .04 –14 16.8 6.90 119 –20.2 .098 23 .12 –96
1.5 .08 –52 15.0 5.64 96 –19.0 .112 26 .10 –116
2.0 .12 –87 13.2 4.58 78 –17.7 .131 24 .08 –134
2.5 .15 –112 11.7 3.85 67 –16.7 .147 25 .07 –135
3.0 .19 –132 10.3 3.27 54 –16.1 .156 22 .07 –129
3.5 .24 –148 8.9 2.80 41 –15.4 .170 18 .09 –117
4.0 .26 –159 7.7 2.43 29 –15.0 .177 13 .13 –106
4.5 .27 –170 6.6 2.14 18 –14.7 .184 8 .17 –105
5.0 .27 175 5.7 1.92 8 –14.3 .192 5 .20 –106
A model for this device is available in the DEVICE MODELS section.
22
MSA-0170 Typical Performance, T
(unless otherwise noted)
21
18
Gain Flat to DC
15
12
(dB)
p
G
9
6
3
0
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 17 mA.
20
(dB)
18
p
G
16
8
6
4
2
(dBm)
1 dB
0
P
–2
–55 –25 +25 +85 +125
TEMPERATURE (°C)
G
P
8
NF
6
4
P
1 dB
2
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.5 GHz, I
= 17 mA.
d
NF (dB)
25
20
15
(mA)
d
I
10
Figure 2. Device Current vs. Voltage.
(dBm)
1 dB
P
–2
–4
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
= 25° C
A
25
TC = +125°C
T
= +25°C
C
T
= –55°C
C
5
0
0 234 561
Vd (V)
(dB)
p
G
20
15
10
5
0
10 20 25 3015
Id (mA)
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
Figure 3. Power Gain vs. Current.
6
Id = 20 mA
4
Id = 17 mA
2
0
Id = 13 mA
0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
7.0
6.5
6.0
NF (dB)
5.5
5.0
Id = 13 mA
I
= 17 mA
d
I
= 20 mA
d
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
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70 mil Package Dimensions
.040
1.02
42GROUND
RF OUTPUT
RF INPUT
AND BIAS
.020
.508
1
.004 ± .002
.10 ± .05
.070
1.70
.495 ± .030
12.57 ± .76
GROUND
3
Notes:
(unless otherwise specified)
1. Dimensions are
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
in
mm
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