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Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0135, -0136
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 1.2 GHz
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applications.
• High Gain:
18.5 dB Typical at 0.5 GHz
• Unconditionally Stable
(k>1)
• Cost Effective Ceramic
Microstrip Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
Description
The MSA-0135 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
Available in cut lead version
(package 36) as MSA-0136.
Typical Biasing Configuration
R
bias
35 micro-X Package
,
MAX
Note:
1. Short leaded 36 package available
upon request.
V
> 7 V
CC
[1]
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
C
block
V
= 5 V
d
5965-9691E
6-250
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MSA-0135, -0136 Absolute Maximum Ratings
Parameter Absolute Maximum
[1]
Device Current 40 mA
Power Dissipation
[2,3]
200 mW
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 6.7 mW/° C for T
4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more accurate determination of θ
= 25°C.
CASE
> 170° C.
C
methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Thermal Resistance
θjc = 150°C/W
than do alternate
jc
[2,5]
:
MSA-0135, -0136 Electrical Specifications
Symbol Parameters and Test Conditions: Id = 17 mA, Z
G
P
∆G
f
3 dB
VSWR
Power Gain (|S21|2) f = 0.1 GHz dB 18.0 19.0
Gain Flatness f = 0.1 to 0.6 GHz dB ±0.6
P
3 dB Bandwidth GHz 1.2
Input VSWR f = 0.1 to 3.0 GHz 1.3:1
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
Output VSWR f = 0.1 to 3.0 GHz 1.3:1
NF 50 Ω Noise Figure f = 0.5 GHz dB 5.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 1.5
Third Order Intercept Point f = 0.5 GHz dBm 14.0
Group Delay f = 0.5 GHz psec 160
Device Voltage V 4.5 5.0 5.5
dV/dT Device Voltage Temperature Coefficient mV/°C –9.0
Notes:
1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current
is on the following page.
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MSA-0135, -0136 Typical Scattering Parameters (Z
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
S
= 17 mA)
d
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .08 158 19.1 9.01 172 –23.0 .071 3 .07 –2
0.2 .08 134 18.9 8.84 165 –22.4 .076 6 .07 –10
0.3 .08 116 18.7 8.65 157 –22.5 .075 12 .07 –10
0.4 .08 97 18.5 8.40 150 –22.2 .078 13 .07 –15
0.5 .09 83 18.2 8.13 143 –21.7 .082 16 .07 –17
0.6 .09 68 17.9 7.84 136 –21.6 .083 17 .07 –21
0.8 .11 47 17.2 7.25 125 –20.7 .092 22 .07 –30
1.0 .11 27 16.5 6.64 113 –19.9 .101 23 .07 –34
1.5 .11 –18 14.6 5.37 90 –18.3 .122 27 .06 –34
2.0 .09 –62 12.8 4.38 70 –16.8 .144 24 .05 –39
2.5 .08 –114 11.3 3.67 58 –16.1 .157 24 .03 –61
3.0 .12 –158 10.0 3.15 43 –15.0 .177 20 .03 –67
3.5 .18 178 8.7 2.72 28 –14.5 .189 14 .05 –88
4.0 .21 163 7.5 2.37 15 –14.0 .200 9 .10 –92
4.5 .23 145 6.4 2.10 2 –13.4 .213 4 .14 –99
5.0 .27 125 5.5 1.88 –10 –13.2 .220 –2 .15 –102
A model for this device is available in the DEVICE MODELS section.
22
MSA-0135, -0136 Typical Performance, T
(unless otherwise noted)
21
18
Gain Flat to DC
15
12
(dB)
p
G
9
6
3
0
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 17 mA.
20
18
(dB)
p
G
16
8
6
4
2
(dBm)
1 dB
0
P
–2
–55 –25 +25 +85 +125
TEMPERATURE (°C)
G
P
8
NF
6
4
P
1 dB
2
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.5 GHz, Id = 17 mA.
25
TC = +125°C
TC = +25°C
20
TC = –55°C
15
(mA)
d
I
10
5
0
0 234561
Figure 2. Device Current vs. Voltage.
6
Id = 20 mA
4
Id = 17 mA
2
(dBm)
1 dB
0
P
Id = 13 mA
NF (dB)
–2
–4
0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
= 25° C
A
Vd (V)
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25
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
(dB)
p
G
20
15
10
5
0
10 20 25 3015
Id (mA)
Figure 3. Power Gain vs. Current.
7.0
Id = 13 mA
Id = 17 mA
Id = 20 mA
6.5
6.0
NF (dB)
5.5
5.0
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
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35 micro-X Package Dimensions
4
GROUND
RF OUTPUT
AND BIAS
A01
2
GROUND
Notes:
(unless otherwise specified)
1. Dimensions are
.100
2.54
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.057 ± .010
1.45 ± .25
.085
2.15
RF INPUT
13
.020
.508
.083
2.11
in
mm
DIA.
.022
.56
.455 ± .030
11.54 ± .75
.006 ± .002
.15 ± .05
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