Datasheet MMBR911LT1 Datasheet (Motorola)

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
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Order this document
by MMBR911LT1/D
   
Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This Motorola small–signal plastic transistor offers superior quality and performance at low cost.
High Gain–Bandwidth Product
fT = 7.0 GHz (Typ) @ 30 mA
Low Noise Figure
NF = 1.7 dB (Typ) @ 500 MHz
High Gain
GNF = 17 dB (Typ) @ 10 mA/500 MHz
State–of–the–Art Technology
Fine Line Geometry Ion–Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel

IC = 60 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTOR NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V Collector–Base Voltage V Emitter–Base Voltage V Collector Current — Continuous I Power Dissipation @ T
Derate linearly above T Storage Temperature T Maximum Junction Temperature T
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case R
DEVICE MARKING
MMBR91 1LT1 = 7P
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
case
case
= 75°C (1)
= 75°C
Rating Symbol Value Unit
P
CEO CBO EBO
C
D(max)
stg
Jmax
θJC
12 Vdc 20 Vdc
2.0 Vdc 60 mA
333
4.44
–55 to +150 °C
150 °C
225 °C/W
mW
mW/°C
REV 8
Motorola, Inc. 1997
MMBR911LT1MOTOROLA RF DEVICE DATA
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ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted)
C
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = 1.0 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 0.1 mA, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 30 mAdc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Current Gain–Bandwidth Product
(VCE = 10 Vdc, IC = 30 mAdc, f = 1.0 GHz)
FUNCTIONAL TESTS
Gain @ Noise Figure
(IC = 10 mAdc, VCE = 10 Vdc) f = 0.5 GHz
Noise Figure
(IC = 10 mAdc, VCE = 10 Vdc) f = 0.5 GHz
f = 1.0 GHz
f = 1.0 GHz
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
C
cb
f
T
G
NF
NF
12 Vdc
20 Vdc
2.0 Vdc
50 nAdc
30 200
1.0 pF
6.0 GHz
— —
— —
17 11
2.0
2.9
— —
— —
dB
dB
10
8
6
4
2
0
, CURRENT GAIN-BANDWIDTH PRODUCT (GHz)
T
010203040
f
IC, COLLECTOR CURRENT (mA)
VCE = 10 V f = 1 GHz
Figure 1. Current Gain–Bandwidth versus
Collector Current @ 1.0 GHz
50
MMBR911LT1 2
MOTOROLA RF DEVICE DATA
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2.5
2.5 f = 1 MHz
2
2
1.5
1
, INPUT CAP ACITANCE (pF)
ib
0.5
C
0
0
Figure 2. Input Capacitance versus
20
16
12
8
, GAIN AT NOISE FIGURE (dB)
NF
4
G
0
0
C
ib
, OUTPUT CAP ACITANCE (pF), C
f = 1 MHz
C
12 3
VBE, BASE–EMITTER VOLTAGE (Vdc)
Base–Emitter V oltage
f = 500 MHz
1 GHz
VCE = 10 V
10 20 30
IC, COLLECTOR CURRENT (mA)
1.5
1
ob
0.5
cb
0
0
12 34 5678910
Vcb, COLLECTOR–BASE VOL TAGE (Vdc)
Figure 3. Output Capacitances versus
5
4
3
2
NF, NOISE FIGURE (dB)
0
0
C
ob
C
cb
Collector–Base V oltage
f = 1 GHz
500 MHz
VCE = 10 V
10 20 30
IC, COLLECTOR CURRENT (mA)
Figure 4. Gain at Noise Figure versus
25
20
15
10
, GAIN AT NOISE FIGURE (dB)
NF
5
G
0
0.2
0.3 0.5 1 1.5 2
Figure 6. Gain at Noise Figure and Noise
Figure versus Frequency
Collector Current
G
NF
NF
f, FREQUENCY (GHz)
VCE = 10 V IC = 10 mA
5
4
3
2
NF, NOISE FIGURE (dB)
1
0
(dB)
2
|
21
MAX AND |S
U
G
30
25
20
15
10
5
0.2
Figure 5. Noise Figure versus Collector Current
VCE = 10 V IC = 30 mA
GUMAX
2
|S21|
0.3 0.5 1 2 f, FREQUENCY (GHz)
1.5
Figure 7. Maximum Unilateral Gain and
Insertion Gain versus Frequency
MMBR911LT1MOTOROLA RF DEVICE DATA
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+j10
V
CE
I
C
f
0
–j10
+j25
–j25
+j50
2
1.5
2510 50 100 250 500150
1
11
0.5
f = 0.2 GHz
–j50
S
2
1
1.5
0.5
+j100
f = 0.2 GHz
S
22
–j100
+j150
–j250
–j150
+j250
+j500
–j500
+150
°
180
°
16 14 12 10 8 6 4 2
–150
°
+120
S
21
–120
°
f = 0.2 GHz
f = 0.2 GHz
°
+90
°
+60
°
+30
0.4
–30
°
0
°
°
S
21
2
S
0.5 1
–90
12
1.5
1
0.5 2
0.20.1
0.3
S
12
–60
°
°
Figure 8. Input and Output Reflection
Coefficients versus Frequency
VCE = 10 V, IC = 30 mA
V
(Volts)
10
I
(mA)
2.0 200
5.0 200
10 200
20 200
30 200
(MHz)
f
500 1000 1500 2000
500 1000 1500 2000
500 1000 1500 2000
500 1000 1500 2000
500 1000 1500 2000
Figure 9. Forward and Reverse Transmission
|S11|
0.82
0.60
0.47
0.46
0.47
0.66
0.43
0.37
0.38
0.40
0.49
0.33
0.32
0.35
0.37
0.36
0.28
0.29
0.33
0.36
0.32
0.27
0.29
0.34
0.37
S
11
Ăφ
–45 –96 –149 –179
162
–63 –117 –163
176 160
–83 –134 –171
173 159
–103 –149 –176
172 158
–114 –156 –178
170 156
|S21|
4.14
3.23
2.16
1.59
1.35
8.63
5.29
3.05
2.17
1.81
12.70
6.42
3.53
2.46
2.04
15.25
6.95
3.73
2.60
2.14
15.64
6.92
3.71
2.58
2.13
S
21
Ăφ
145 112
85 71 57
134 100
82 70 57
124
94 80 69 58
114
90 78 68 58
109
88 78 68 57
T able 1. Common Emitter S–Parameters
Coefficients versus Frequency
VCE = 10 V, IC = 30 mA
S
12
|S12|
0.06
0.09
0.11
0.13
0.16
0.05
0.07
0.11
0.15
0.19
0.04
0.07
0.12
0.16
0.20
0.03
0.06
0.12
0.17
0.21
0.03
0.06
0.12
0.16
0.21
Ăφ
66 49 49 55 62
64 58 63 65 65
65 66 70 69 66
69 72 73 71 67
71 73 74 72 68
|S22|
0.88
0.71
0.62
0.58
0.56
0.75
0.55
0.48
0.45
0.43
0.62
0.44
0.41
0.38
0.35
0.52
0.39
0.37
0.34
0.32
0.48
0.38
0.37
0.34
0.32
S
22
Ăφ
–16 –27 –34 –43 –51
–25 –31 –36 –44 –51
–30 –32 –36 –45 –52
–32 –30 –35 –43 –52
–29 –27 –33 –44 –51
MMBR911LT1
MOTOROLA RF DEVICE DATA
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P ACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
2
S
B
GV
C
D
H
K
J
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
INCHES
DIMAMIN MAX MIN MAX
0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
MILLIMETERS
CASE 318–08
ISSUE AF
MMBR911LT1MOTOROLA RF DEVICE DATA
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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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MMBR911LT1 6
MOTOROLA RF DEVICE DATA
MMBR911L T1/D
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