Page 1
J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177
g
J174
J175
J176
MMBFJ175
MMBFJ176
MMBFJ177
J177
G
D
S
G
D
P-Channel Switch
This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers. Sourced from Process 88.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
V
GS
I
GF
TJ ,T
st
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Drain-Gate Voltage - 30 V
Gate-Source Voltage 30 V
Forward Gate Current 50 mA
Operating and Stora ge Junction Temperature Range -55 to +150
TO-92
SOT-23
Mark: 6W / 6X / 6Y
S
C
°
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
J174 - J177 *MMBFJ175
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Ther mal Resistance, Junction to Case 125
Thermal Resistance, Junction to Ambient 357 556
350
2.8
225
1.8
mW
mW/°C
C/W
°
C/W
°
J174-177, Rev. A
Page 2
P-Channel Switch
(BR)
)
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
B
I
V
GSS
GSS
GS(off
Gate-Source Breakdown Voltage
Gate Reverse Current VGS = 20 V, VDS = 0 1.0 nA
Gate-Source Cutoff Voltage VDS = - 15 V, ID = - 10 nA
ON CHARACTERISTICS
I
DSS
r
DS(on)
Zero-Gate Voltage Drain Current* VDS = - 15 V, IGS = 0
Drain-Source On Resistance
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
= 1.0 µA, VDS = 0
I
G
V
0.1 V, VGS = 0
≤
DS
J174
J175
J176
J177
J174
J175
J176
J177
J174
J175
J176
J177
30 V
5.0
3.0
1.0
0.8
- 20
- 7.0
- 2.0
- 1.5
10
6.0
4.0
2.5
- 100
- 60
- 25
- 20
85
125
250
300
V
V
V
V
mA
mA
mA
mA
Ω
Ω
Ω
Ω
J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177
Typical Characteristics
Common Drain-Source
-20
-16
-12
-8
-4
D
I - DRAIN CURRENT (mA )
0
T = 25°C
A
TYP V = 4.5 V
GS(off)
V = 0 V
GS
V - DRAIN-SOURCE VOLT AGE (V)
DS
0.5 V
1.0 V
1.5 V
2.0 V
2.5 V
3.0 V
3.5 V
Parameter Interactions
100
50
r
DS
10
5
fs
1
g - TRANSCONDUCTANCE (mmhos)
-5-4-3-2-10
12 510
V - GATE CUTOFF VOLTAGE (V)
GS (OFF)
I
DSS
g
fs
fs
I , g @ V = 15V,
DSS
V = 0 PULSED
GS
r @ -100 mV, V = 0
DS
V @ V = - 15V,
GS(off)
I = - 1.0 µA
D
DS
GS
DS
DS
1,000
500
100
50
10
r - DRAIN "ON" RESISTANCE
DS
(
Ω
)
Page 3
Typical Characteristics (continued)
J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177
P-Channel Switch
(continued)
Transfer Characteristics
-32
V = - 15 V
DS
V = - 4.5 V
GS(off)
-24
-16
-8
D
I - DRAIN CURRENT (mA)
0
01234
- 55°C
25°C
125°C
V = 2.5 V
GS(off)
- 55°C
25°C
125°C
V - GATE-SOURCE VOLTAGE (V)
GS
Normalized Drain Resistance
vs Bias Voltage
100
V @ 5.0V, 10 µA
GS(off)
50
r
20
r =
DS
10
5
2
DS
1
r - NORMALIZED RESISTANCE
0 0.2 0.4 0.6 0.8 1
V /V - NORMALIZED GATE-SOURCE VOLTAGE (V)
GS
GS(off)
________
1 -
V
DS
GS
V
GS(off)
Transfer Characteristics
16
12
D
I - DRAIN CURRENT (mA)
V = - 15 V
DS
8
V = - 4.5 V
GS(off)
- 55°C
25°C
125°C
V = 2.5 V
GS(off)
- 55°C
125°C
25°C
4
0
01234
V - GATE-SOURCE VOLTAGE (V)
GS
Output Conductance
vs Drain Current
1000
µ
os
g - OUTPUT CONDUCTANCE ( mhos)
100
f = 1.0 kHz
V = - 4.5V
GS(off)
-10V
-5.0V
-20V
-5.0V
-20V
10
V = - 2.5V
GS(off)
1
_
0.01 0.1 1 10
_
I - DRAIN CURRENT (mA)
D
_
-10V
_
Transconductance
vs Drain Current
10
V = 2.5V
GS(off)
5
25°C
V = 6.0V
GS(off)
- 55°C
1
0.5
V = -15V
DG
f = 1.0 kHz
0.1
_
fs
0.1 1 10 100
g - TRANSCONDUCTANCE (mmhos)
_
I - DRAIN CURRENT (mA)
D
25°C
125°C
_
Capacitance vs Voltage
100
10
5
rs
is
C (C ) - CAPACITANCE (pF)
_
1
048121620
V - GATE-SOURCE VOLTAGE (V)
GS
f = 0.1 - 1.0 MHz
C (V = -15V)
DS
is
C (V = -15V)
DS
rs
Page 4
Typical Characteristics (continued)
J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177
P-Channel Switch
(continued)
Noise Voltage vs Frequency
100
√
50
I = - 0.2 mA
D
I = 5.0 mA
10
D
5
V = - 15V
DG
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
n
= 0.2f @ f ≥ 1.0 kHz
e - NOISE VOLTAGE ( nV / Hz)
1
0.01 0.1 1 10 100
f - FREQUENCY (kHz)
350
300
250
200
150
100
50
D
P - POWER DISSIPATION (mW)
0
0 25 50 75 100 125 150
)
Ω
(
1000
500
100
50
DS
r - DRAIN "ON" RESISTANCE
10
Power Dissipation vs
Ambient Tem p erature
TO-92
SOT-23
TEMPERATURE ( C)
o
Channel Resistance
vs Temperature
V = -100 mV
V = 2.5V
GS(off)
V = 4.5V
GS(off)
V = 8.0V
GS(off)
-50 0 50 100 150
T - AMBIENT TEMPERATURE ( C)
A
DS
V = 0
GS
o
Page 5
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not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E2CMOS
TM
FACT™
FACT Quiet Series™
®
FAST
FASTr™
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HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
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SuperSOT™-8
TinyLogic™
UHC™
VCX™
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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