Datasheet MMBR901LT1, MMBR901LT3, MMBR9011LT1 Datasheet (Motorola)

2–1

MMBR901L T1, T3 MRF9011L T1MOTOROLA RF DEVICE DATA

The RF Line

  !"  

Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times.

• High Current–Gain — Bandwidth Product

• Low Noise Figure @ f = 1.0 GHz —

NF

(matched)

= 1.8 dB (Typ) (MRF9011LT1)

NF

(matched)

= 1.9 dB (Typ) (MMBR901LT1, T3)

• High Power Gain —

G

pe(matched)

= 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1)

G

pe(matched)

= 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3)

• Guaranteed RF Parameters (MRF9011LT1)

• Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance

Lower Package Parasitics High Gain

• Available in tape and reel packaging options:

T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter V oltage V

CEO

15 Vdc

Collector–Base Voltage V

CBO

25 Vdc

Emitter–Base Voltage V

EBO

2.0 Vdc

Collector Current — Continuous I

C

30 mAdc

Power Dissipation @ TC = 75°C (1)

MMBR901LT1, T3; MRF9011LT1

Derate above 25°C

P

D(max)

0.300

4.00

Watt

mW/°C

Storage Temperature Range All T

stg

–55 to +150 °C

Maximum Junction Temperature T

J(max)

150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Storage Temperature T

stg

150 °C

Thermal Resistance, Junction to Case

MRF9011LT1, MMBR901LT1, T3

R

θJC

200

°C/W

DEVICE MARKING

MRF9011LT1 = 01 MMBR901LT1, T3 = 7A

NOTE:

1. Case temperature measured on collector lead immediately adjacent to body of package.

Order this document

by MMBR901LT1/D



SEMICONDUCTOR TECHNICAL DATA

 



IC = 30 mA

SURFACE MOUNTED

HIGH–FREQUENCY

TRANSISTOR

NPN SILICON

CASE 318A–05, STYLE 1

SOT–143

LOW PROFILE, MRF9011LT1

CASE 318–08, STYLE 6

SOT–23

LOW PROFILE, MMBR901LT1, T3

 Motorola, Inc. 1997

REV 8

MMBR901L T1, T3 MRF9011L T1 2–2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown V oltage

(IC = 1.0 mAdc, IB = 0)

V

(BR)CEO

15 — — Vdc

Collector–Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

V

(BR)CBO

25 — — Vdc

Emitter–Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

V

(BR)EBO

2.0 — — Vdc

Collector Cutoff Current

(VCB = 15 Vdc, IE = 0)

I

CBO

— — 50 nAdc

ON CHARACTERISTICS

DC Current Gain MMBR901L T1, T3

(IC = 5.0 mAdc, VCE = 5.0 Vdc) MRF9011LT1

h

FE

50 30

—

80

200 200

—

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product MRF9011LT1

(IC = 15 mAdc, VCE = 10 Vdc, f = 1.0 GHz)

f

T

— 3.8 — GHz

Collector–Base Capacitance MRF9011LT1

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

C

cb

— 0.55 1.0 pF

FUNCTIONAL TESTS

Power Gain at Minimum Noise Figure MRF9011LT1

(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)

G

NFmin

— 13.5 — dB

Minimum Noise Figure (Figure 3) MRF9011LT1

(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)

NF

min

— 1.8 — dB

Insertion Gain in 50 Ω System MRF9011LT1

(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)

S21

2

9.0 10.2 — dB

Minimum Noise Figure (Figure 3)

(VCE = 6.0 Vdc, IC = 5.0 mA, f = 1.0 GHz) MMBR901LT1, T3 (VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)

NF

min

— 1.9 —

dB

SMALL–SIGNAL CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IC = 5.0 mAdc, f = 1.0 GHz) MMBR901LT1

C

obo

— — 1.0 pF

Common–Emitter Amplifier Gain

(VCC = 6.0 Vdc, IC = 5.0 mAdc, f = 1.0 GHz) MMBR901LT1

G

pe

— 12 — dB

2–3

MMBR901L T1, T3 MRF9011L T1MOTOROLA RF DEVICE DATA

Figure 1. Collector–Base Capacitance

versus Collector–Base Voltage

Figure 2. Gain and Noise Figure

versus Collector Current

Figure 3. MRF9011LT1 Functional Circuit Schematic

2

1.6

1.2

0.8

0.4

0

16

12

8

4

0

1

2

3

4

5

6

7

8

0 2 4 6 8 10121416 036912151821 3024 27

VCB, COLLECTOR–BASE VOL TAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

V

BE

D.U.T.

RF INPUT

RF OUTPUT

**SLUG TUNER

**SLUG TUNER*BIAS

TEE

*BIAS

TEE

**MICROLAB/FXR

**SF–11N FOR f < 1 GHz

**SF–31N FOR f > 1 GHz

V

CE

f = 1 MHz

VCE = 10 Vdc

f = 1 GHz

ΓS =

ΓL = 0

Zo = 50 OHMS

CIRCUIT USED IS HP 11608A

C

cb

, COLLECTOR-BASE CAP ACITANCE (pF)

G

NF

, GAIN (dB)

NF, NOISE FIGURE (dB)

G

NF

MRF9011LT1

MMBR901L T1, T3 MRF9011L T1 2–4

MOTOROLA RF DEVICE DATA

NF, NOISE FIGURE (dB)

Figure 4. Gain and Noise Figure

versus Frequency

Figure 5. Gain and Noise Figure

versus Collector Current

Figure 6. Gain–Bandwidth Product versus

Collector Current

Figure 7. Insertion Gain versus Frequency

Figure 8. Maximum Unilateral Gain

versus Frequency

G

NF

, GAIN (dB)

G

Umax

, MAXIMUM UNILATERAL GAIN (dB)

|S

21

|

2

, INSERTION GAIN (dB)

16

12

8

4

0

1

2

3

4

5

6

7

8

0 3 6 9 12 15 18 21 3024 27

IC, COLLECTOR CURRENT (mA)

VCE = 10 Vdc

f = 1 GHz

CIRCUIT USED — SEE FIGURE 3

G

NF

, GAIN (dB)

G

NF

0

1

2

3

4

5

0 6 12 18 3024

IC, COLLECTOR CURRENT (mA)

VCE = 10 Vdc

Zo = 50 OHMS

32

24

16

8

0

0.1

40

VCE = 10 Vdc

IC = 5 mA

G

NF

f, FREQUENCY (GHz)

VCE = 10 Vdc

Zo = 50 OHMS

IC = 5 mA

VCE = 10 Vdc

Zo = 50 OHMS

IC = 5 mA

24

18

12

6

0

0.1

30

0.2 0.3 0.5 1 2 3

40

30

20

10

0

0.1

50

0.2 0.3 0.5 1 2 3

f, FREQUENCY (GHz)

, GAIN-BANDWIDTH PRODUCT (GHz)F

τ

(1 – |S11|2)(1 – |S22|2)

|S21|

2

G

Umax

=

0.2 0.5 1 2

4

3

2

1

5

CIRCUIT USED — SEE FIGURE 3

MRF9011LT1

2–5

MMBR901L T1, T3 MRF9011L T1MOTOROLA RF DEVICE DATA

V

I

f

S

11

S

21

S

12

S

22

V

CE

(Vdc)

I

C

(mA)

f

(MHz)

|S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ

5.0

5.0 100 200 500

1000 2000

0.85

0.78

0.71

0.66

0.60

–41 –76 –131 –169

152

13.64

10.77

6.10

3.22

1.65

153 134 102

77 47

0.03

0.05

0.08

0.11

65 54 35 33 46

0.93

0.80

0.55

0.45

0.47

–17 –29 –42 –48 –63

10 100

200 500

1000 2000

0.72

0.70

0.66

0.63

0.58

–59 –100 –150

179 147

20.01

14.31

7.03

3.57

1.79

145 123

94 73 46

0.03

0.04

0.06

0.07

0.11

62 49 38 45 57

0.87

0.67

0.44

0.37

0.41

–23 –36 –43 –46 –60

15 100

200 500

1000 2000

0.65

0.66

0.65

0.63

0.59

–75 –118 –159

174 144

23.44

15.56

7.10

3.57

1.77

138 116

90 71 45

0.02

0.04

0.05

0.06

0.11

57 46 42 52 62

0.81

0.59

0.40

0.35

0.40

–27 –38 –40 –43 –58

20 100

200 500

1000 2000

0.61

0.66

0.65

0.61

–89 –130 –166

171 143

24.32

15.11

6.68

3.32

1.65

133 111

88 69 43

0.02

0.03

0.04

0.06

0.10

51 43 46 56 65

0.77

0.55

0.41

0.39

0.44

–28 –35 –34 –39 –56

30 100

200 500

1000 2000

0.63

0.68

0.69

0.70

0.66

–132 –157 –177

165 138

13.18

7.07

3.23

1.78

0.93

118 104

90 71 42

0.02

0.03

0.05

0.09

47 44 55 65 79

0.72

0.66

0.62

0.59

0.62

–15 –16 –24 –38 –62

10

5.0 100 200 500

1000 2000

0.85

0.80

0.70

0.65

0.58

–38 –71 –126 –166

154

13.67

10.97

6.35

3.39

1.74

155 136 104

78 48

0.03

0.05

0.07

0.10

70 56 37 36 50

0.93

0.83

0.60

0.51

0.54

–14 –24 –35 –40 –55

10 100

200 500

1000 2000

0.75

0.71

0.65

0.62

0.57

–55 –94 –145 –177

149

20.12

14.60

7.33

3.74

1.88

147 125

96 74 47

0.02

0.04

0.05

0.06

0.10

66 50 39 46 60

0.88

0.72

0.50

0.45

0.49

–19 –30 –35 –38 –53

15 100

200 500

1000 2000

0.68

0.67

0.64

0.62

0.58

–68 –110 –155

177 146

23.53

15.90

7.45

3.74

1.90

140 119

92 71 45

0.02

0.03

0.04

0.06

0.09

61 49 42 53 65

0.85

0.65

0.47

0.44

0.50

–22 –31 –32 –35 –51

20 100

200 500

1000 2000

0.64

0.62

0.59

–79 –122 –161

174 145

24.77

15.81

7.10

3.53

1.75

135 114

89 79 44

0.02

0.03

0.04

0.05

0.09

56 46 46 56 68

0.81

0.62

0.48

0.46

0.53

–23 –29 –28 –33 –50

30 100

200 500

1000 2000

0.61

0.63

0.65

0.66

0.63

–114 –147 –172

168 140

16.25

9.10

4.22

2.27

1.15

123 107

90 71 41

0.01

0.02

0.03

0.05

0.08

48 49 53 63 79

0.79

0.71

0.66

0.63

0.67

–15 –15 –22 –33 –53

Table 1. MRF9011L T1 Common Emitter S–Parameters

MMBR901L T1, T3 MRF9011L T1 2–6

MOTOROLA RF DEVICE DATA

P ACKAGE DIMENSIONS

CASE 318–08

ISSUE AF

MMBR901LT1, T3

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

D

J

K

L

A

C

B

S

H

GV

3

1

2

DIMAMIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

CASE 318A–05

ISSUE R

MRF9011LT1

STYLE 1:

PIN 1. COLLECTOR

2. EMITTER

3. EMITTER

4. BASE

DIMAMIN MAX MIN MAX

INCHES

2.80 3.04 0.110 0.120

MILLIMETERS

B 1.20 1.39 0.047 0.055 C 0.84 1.14 0.033 0.045 D 0.39 0.50 0.015 0.020 F 0.79 0.93 0.031 0.037 G 1.78 2.03 0.070 0.080 H 0.013 0.10 0.0005 0.004 J 0.08 0.15 0.003 0.006 K 0.46 0.60 0.018 0.024 L 0.445 0.60 0.0175 0.024 R 0.72 0.83 0.028 0.033 S 2.11 2.48 0.083 0.098

NOTES:

4. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

5. CONTROLLING DIMENSION: MILLIMETER.

G

S

R

C

J

A

L

F

D

B

1

34

2

H

K

2–7

MMBR901L T1, T3 MRF9011L T1MOTOROLA RF DEVICE DATA

How to reach us: USA/ EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMF AX0@email.sps.mot.com – T OUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

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MMBR901L T1/D

◊