Datasheet MMBR5711LT1, MMBR571LT1 Datasheet (Motorola)

Page 1
1
MMBR571LT1 MRF571 MRF5711LT1MOTOROLA RF DEVICE DATA
The RF Line
   
Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This Motorola series of small–signal plastic transistors offers superior quality and performance at low cost.
High Gain–Bandwidth Product
fT = 8.0 GHz (Typ) @ 50 mA
Low Noise Figure
NF
min
= 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571)
High Gain
GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1)
High Power Gain
G
pe (matched)
= 13.5 dB (Typ) (MRF5711LT1)
State–of–the–Art Technology
Fine Line Geometry Ion–Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V
CEO
10 Vdc
Collector–Base Voltage V
CBO
20 Vdc
Emitter–Base Voltage V
EBO
3.0 Vdc
Collector Current — Continuous I
C
80 mA
Total Device Dissipation @ T
case
= 75°C
MMBR571L T1, MRF5711LT1
Derate linearly above T
case
= 75°C @
P
D(max)
0.33
4.44WmW/°C
Total Device Dissipation (1) @ TC = 75°C
Derate above 75°C MRF571
P
D
0.58
7.73
Watts
mW/°C
Operating and Storage Temperature T
stg
–55 to
+150
°C
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Thermal Resistance, Junction to Case
MRF5711LT1, MMBR571LT1
R
θJC
225 °C/W
Thermal Resistance, Junction to Case MRF571 R
θJC
130 °C/W
Maximum Junction Temperature T
Jmax
150 °C
DEVICE MARKING
MMBR571L T1 = 7X MRF5711LT1 = 02
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MMBR571LT1/D

SEMICONDUCTOR TECHNICAL DATA



IC = 80 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTORS
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MMBR571L T1
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF5711LT1
CASE 317–01, STYLE 2
MACRO–X
MRF571
Motorola, Inc. 1997
REV 8
Page 2
MMBR571LT1 MRF571 MRF5711L T1 2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage (IC = 1.0 mA, IB = 0) V
(BR)CEO
10 12 Vdc
Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V
(BR)CBO
20 Vdc
Emitter–Base Breakdown Voltage (IE = 50 µAdc, IC = 0) V
(BR)EBO
2.5 Vdc
Collector Cutoff Current (VCB = 8.0 Vdc, IE = 0) I
CBO
10 µAdc
ON CHARACTERISTICS
DC Current Gain (IC = 30 mAdc, VCE = 5.0 Vdc) h
FE
50 300
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MMBR571L T1 (VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz) MRF5711LT1, MRF571
C
cb
— —
0.7
0.75
1.0
1.0
pF
Current Gain–Bandwidth Produc
(VCE = 5.0 Vdc, IC = 50 mAdc, f = 1.0 GHz) MMBR571LT1 (VCE = 8.0 Vdc, IC = 50 mAdc, f = 1.0 GHz) MRF5711LT1, MRF571
f
T
— —
8.0
8.0
— —
GHz
FUNCTIONAL TESTS
Gain @ Noise Figure MRF571 f = 0.5 GHz
(IC = 10 mAdc, VCE = 6.0 Vdc) MRF571 f = 1.0 GHz
G
NF
— 10
16.5 12
— —
dB
Noise Figure MRF571 f = 0.5 GHz
(IC = 10 mAdc, VCE = 6.0 Vdc) MRF571 f = 1.0 GHz
f = 2.0 GHz
NF
— —
1.0
1.5
2.8
2.0 —
dB
Gain @ Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc) MMBR571LT1 f = 0.5 GHz
f = 1.0 GHz
(IC = 10 mA, VCE = 6.0 Vdc) MRF5711LT1 f = 1.0 GHz
G
NF
— — —
16.5
10.5
13.5
— — —
dB
Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc) MMBR571LT1 f = 0.5 GHz
f = 1.0 GHz
(IC = 10 mAdc, VCE = 6.0 Vdc) MRF5711LT1 f = 1.0 GHz
NF
— — —
2.0
2.6
2.2
— — —
dB
Noise Figure
(VCE = 6.0 V , IC = 10 mA, f = 1.0 GHz) MRF5711LT1
NF
min
1.6 dB
Power Gain in 50 System (VCE = 6.0 V , IC = 10 mA, f = 1.0 GHz)
MRF5711LT1
|S21|
2
9.0 10 dB
Figure 1. Maximum Available Gain
versus Frequency
Figure 2. Current Gain–Bandwidth versus
Collector Current @ 1.0 GHz
25
20
15
10
5
0
0.4 0.6 1 2 3 f, FREQUENCY (GHz)
G
A
MAX, MAXIMUM AV AILABLE GAIN (dB)
VCE = 5 V
IC = 30 mA
G
A
MAX
+
|
S
21
|
|S12|
(k"(k
2
1) ), kw1
Ǹ
10
8
6
4
2
0
0
IC, COLLECTOR CURRENT (mA)
f
T
, CURRENT GAIN-BANDWIDTH PRODUCT (GHz)
10 20 30 40 50 60 70 80 90 100
VCE = 5 V
f = 1 GHz
TYPICAL CHARACTERISTICS
MMBR571LT1
Page 3
3
MMBR571LT1 MRF571 MRF5711L T1MOTOROLA RF DEVICE DATA
Figure 3. Input Capacitance versus
Emitter Base Voltage
SOT–23 MMBR571LT1
SOT–23 MMBR571LT1
SOT–23 MMBR571LT1
C
ib
, INPUT CAP ACITANCE (pF)
VBE, BASE–EMITTER VOLTAGE (Vdc)
4
1
3
2
1
23
0
0
f = 1 MHz
C
ib
C
cb
, OUTPUT CAP ACITANCES (pF), C
ob
Vcb, COLLECTOR–BASE VOL TAGE (Vdc)
2.5
0
2
1.5
1
0.5
0
12 345678 910
C
ob
C
cb
f = 1 MHz
G
NF
, GAIN AT NOISE FIGURE (dB)
0
IC, COLLECTOR CURRENT (mA)
20
16
12
8
4
0
10 20 30 40 50
f = 500 MHz
VCE = 5 V
TYPICAL CHARACTERISTICS
MMBR571LT1
Figure 4. Output Capacitances versus
Collector–Base Voltage
Figure 5. Gain at Noise Figure versus
Collector Current
1 GHz
Figure 6. Noise Figure versus Collector Current
SOT–23 MMBR571LT1
SOT–23 MMBR571LT1 SOT–23 MMBR571LT1
NF, NOISE FIGURE (dB)
0
IC, COLLECTOR CURRENT (mA)
5
4
3
2
1
0
10 20 30 40 50
f = 500 MHz
f = 1 GHz
VCE = 5 V
G
NF
, GAIN AT NOISE FIGURE (dB)
0.2 f, FREQUENCY (GHz)
25
20
15
10
5
0
0.3 0.5 1 1.5 2
NF, NOISE FIGURE (dB)
5
4
3
2
1
0
VCE = 5 V
IC = 10 mA
G
NF
NF
25
0.2 f, FREQUENCY (GHz)
20
15
10
5
0.3 0.6 1 2
30
1.5
GUMAX =
|S21|
2
(1 – |S11|2)(1 – |S22|2)
GUMAX
|S21|
2
VCE = 5 V
IC = 30 mA
G
U
MAX AND |S
21
|
2
(dB)
Figure 7. Gain at Noise Figure and Noise
Figure versus Frequency
Figure 8. Maximum Unilateral Gain and
Insertion Gain versus Frequency
Page 4
MMBR571LT1 MRF571 MRF5711LT1 4
MOTOROLA RF DEVICE DATA
Figure 9. Collector–Base Capacitance
versus Collector–Base Voltage
Figure 10. 50 W Noise Figure
versus Frequency
Figure 11. Functional Circuit Schematic
*BIAS
TEE
**SLUG TUNER
*BIAS
TEE
**SLUG TUNER
RF OUTPUT
RF INPUT
V
BE
VCE = 6 Vdc
*
D.U.T.
**MICROLAB/FXR
**SF — 11N < 1 GHz
**SF — 31N > 1 GHz
C
cb
, COLLECTOR-BASE CAP ACITANCE (pF)
2
1.6
1.2
0.8
0.4
0
1086420
Vcb, COLLECTOR–BASE VOL TAGE (VOLTS)
0.15 f, FREQUENCY (GHz)
0.2 0.5 1 2
NF, NOISE FIGURE (dB)
5
4
3
2
1
0
f = 1 MHz
NF
VCE = 6 Vdc
IC = 5 mA
CKT = HP 11608A
Zo = 50
Γ
S
=
Γ
L
= 0
*MICROLAB
*HW–XXN *AS APPLICABLE
TYPICAL CHARACTERISTICS
MRF5711LT1
Page 5
5
MMBR571LT1 MRF571 MRF5711L T1MOTOROLA RF DEVICE DATA
G
NF
Figure 12. Gain and Noise Figure
versus Frequency
Figure 13. Gain and Noise Figure
versus Collector Current
Figure 14. Gain and Noise Figure
versus Collector Current
Figure 15. Gain Bandwidth Product
versus Collector Current
Figure 16. G
Umax
and |S21|
2
versus Frequency
Figure 17. Insertion Gain versus
Collector Current
G
NF
, GAIN (dB)
40
32
0.15 f, FREQUENCY (GHz)
0.2 0.5 1 2
NF, NOISE FIGURE (dB)
5
4
3
2
1
0
24
16
8
0
G
NF
NF
VCE = 6 Vdc
IC = 5 mA
CKT = FIGURE 3
G
NF
, GAIN (dB)
16
IC, COLLECTOR CURRENT (mA)
0
NF, NOISE FIGURE (dB)
4 3 2 1
12
8
4
0
10 20 30 40 50
G
NF
NF
VCE = 6 Vdc f = 1 GHz CKT = FIGURE 3
G
NF
, GAIN (dB)
IC, COLLECTOR CURRENT (mA)
0
NF, NOISE FIGURE (dB)
4 3 2 1
24
10 20 30 40 50
18
12
6
0
VCE = 6 Vdc f = 500 MHz CKT = FIGURE 3
NF
f , GAIN BANDWIDTH PRODUCT (GHz)
T
IC, COLLECTOR CURRENT (mA)
0
10
8
4
0
20 6040 80 100
6
2
f = 1 GHz
VCE = 8 Vdc
Zo = 50
40
32
0.15
f, FREQUENCY (GHz)
0.2 0.5 1 2
24
16
8
0
|S
21
|
2
, GAIN (dB)G
Umax
AND
G
Umax
=
|S21|
2
(1 – |S11|2)(1 – |S22|2)
G
Umax
|S21|
2
VCE = 8 Vdc
IC = 50 mA
Zo = 50
|S
21
|
2
, INSERTION GAIN (dB)
32
24
16
8
0
IC, COLLECTOR CURRENT (mA)
0 1020304050
Z
o
= 50
VCE = 6 Vdc
f = 200 MHz
1 GHz
500 MHz
TYPICAL CHARACTERISTICS
MRF5711LT1
2 GHz
Page 6
MMBR571LT1 MRF571 MRF5711L T1 6
MOTOROLA RF DEVICE DATA
+j50
+j100
+j150
+j250
+j500
–j500
–j250
–j150
–j100
–j50
–j25
–j10
0
+j10
+j25
+90
°
+120
°
+150
°
180
°
0
°
–150
°
–120
°
–90
°
–60
°
–30
°
+30
°
+60
°
S
11
2
2
1
1.5
1.5
0.5
1
S
22
10 25 50 100 150 250 500
0.5
S
21
0.5
0.5
2
2
1.5
S
12
1
1
1.5
S
21
S
12
0.1 0.2 0.3
14 12 8 6 4 210
0.4
f = 0.2 GHz
Figure 18. Input/Output Reflection Coefficients
versus Frequency
VCE = 5.0 V, IC = 30 mA
MMBR571LT1
Figure 19. Forward/Reverse Transmission
Coefficients versus Frequency
VCE = 5.0 V, IC = 30 mA
f = 0.2 GHz
f = 0.2 GHz
f = 0.2 GHz
V
I
f
S
11
S
21
S
12
S
22
V
CE
(Volts)
I
C
(mA)
f
(MHz)
|S11|
Ăφ
|S21|
Ăφ
|S12|
Ăφ
|S22|
Ăφ
5.0
5.0 200 500
1000 1500 2000
0.68
0.52
0.50
0.51
0.52
–82 –142
179 161 143
8.41
4.62
2.57
1.82
1.48
126
93 72 57 45
0.07
0.10
0.14
0.19
0.24
53 46 53 58 59
0.61
0.35
0.26
0.24
0.22
–45 –60 –71 –77 –86
15 200
500
1000 1500 2000
0.46
0.43
0.44
0.45
0.46
–125 –169
168 152 137
13.65
6.03
3.20
2.21
1.80
108
86 72 58 48
0.05
0.09
0.16
0.22
0.29
60 66 67 64 59
0.35
0.17
0.14
0.11
0.10
–73 –94 –111 –118 –131
30 200
500
1000 1500 2000
0.42
0.41
0.42
0.44
0.44
–148 –177
165 151 135
14.79
6.31
3.35
2.29
1.84
102
84 71 59 48
0.04
0.09
0.16
0.23
0.30
68 72 70 65 60
0.26
0.14
0.12
0.11
0.10
–87 –115 –135 –144 –157
50 200
500
1000 1500 2000
0.41
0.42
0.43
0.44
0.45
–159
179 163 148 134
15.14
6.38
3.35
2.32
1.84
98 83 70 58 48
0.04
0.09
0.16
0.23
0.30
73 75 71 66 60
0.21
0.13
0.12
0.10
0.09
–96 –124 –143 –151 –163
Table 1. MMBR571LT1 Common Emitter S–Parameters
Page 7
7
MMBR571LT1 MRF571 MRF5711LT1MOTOROLA RF DEVICE DATA
Figure 20. MRF5711LT1 Constant Gain and Noise Figure Contours
(f = 0.5 GHz)
Figure 21. MRF5711LT1 Constant Gain and noise Figure Contours
(f = 1.0 GHz)
ΓMS NF OPT
0.36 104°Rn7K0.63
f (GHz)
0.5
NF OPT
1.20 dB
VCE = 5 V IC = 10 mA
= Area of Instability
j1.0
j2.0j0.5
j0.2
–j0.2
–j0.5
–j1.0
–j2.0
1.2
19
18
17 1.6
1.8
1.4
20.4
0.2
0.5 1.0 2.0
ΓMS NF OPT
0.20 162°Rn8K0.94
f (GHz)
1.0
NF OPT
1.70 dB
0.2 0.5 1.0 2.0
j1.0
j2.0j0.5
j0.2
–j0.2
–j0.5
–j1.0
–j2.0
VCE = 5 V IC = 10 mA
= Area of Instability
1.7
1.9
2.1
2.3
6.4 15 14
Page 8
MMBR571LT1 MRF571 MRF5711L T1 8
MOTOROLA RF DEVICE DATA
V
I
f
S
11
S
21
S
12
S
22
V
CE
(Vdc)
I
C
(mA)
f
(MHz)
|S11| φ |S21| φ |S12| φ |S22| φ
6.0
5.0 200 500
1000 1500 2000
0.79
0.72
0.69
0.66
0.65
–90 –144 –177
164 147
10.9
5.7
3.0
2.0
1.6
128
96 75 59 47
0.06
0.08
0.09
0.10
0.12
46 28 28 32 38
0.70
0.42
0.31
0.34
0.32
–45 –66 –77 –89 –94
10 200
500
1000 1500 2000
0.72
0.69
0.67
0.64
0.64
–115 –160
174 159 143
15.2
6.9
3.6
2.4
1.8
118
92 74 60 49
0.05
0.06
0.08
0.10
0.12
41 34 42 46 50
0.55
0.30
0.21
0.23
0.20
–66 –92 –108 –114 –116
50 200
500
1000 1500 2000
0.67
0.67
0.66
0.63
0.58
–159
179 174 151 138
20
8.2
3.8
2.7
2.1
102
85 72 61 51
0.02
0.04
0.07
0.10
0.14
48 58 65 64 62
0.33
0.33
0.21
0.22
0.17
–111 –142 –158 –158 –165
8.0
5.0 200 500
1000 1500 2000
0.80
0.72
0.70
0.66
0.61
–87 –141 –177
166 149
11.1
5.9
3.1
2.1
1.6
130
97 75 60 47
0.06
0.08
0.09
0.10
0.12
47 30 28 32 39
0.71
0.44
0.33
0.35
0.35
–42 –60 –68 –80 –85
10 200
500
1000 1500 2000
0.72
0.68
0.66
0.64
0.60
–113 –159
175 160 144
15.6
7.2
3.7
2.5
2.0
119
92 74 61 49
0.05
0.06
0.08
0.09
0.13
42 34 41 47 50
0.56
0.31
0.21
0.23
0.21
–61 –82 –92 –101 –103
50 200
500
1000 1500 2000
0.66
0.65
0.64
0.61
0.58
–156 –179
164 153 137
20.9
8.6
4.3
2.9
2.3
103
85 72 61 51
0.02
0.04
0.07
0.10
0.13
48 58 65 65 64
0.31
0.19
0.16
0.17
0.14
–101 –128 –144 –142 –145
Table 2. MRF5711LT1 Common Emitter S–Parameters
Page 9
9
MMBR571LT1 MRF571 MRF5711LT1MOTOROLA RF DEVICE DATA
G
NF
, GAIN AT NOISE FIGURE (dB)
Figure 22. Ccb, Collector–Base Capacitance
versus Voltage
Figure 23. Cib, Input Capacitance
versus Emitter Base Voltage
Figure 24. Gain at Noise Figure and Noise Figure
versus Frequency
C
cb
, COLLECTOR-BASE CAP ACITANCE (pF)
1.25
1
0.75
0.5
0.25
0
109876543210
Vcb, COLLECTOR–BASE VOL TAGE (Vdc)
G
NF
NF
f = 1 MHz
C
ib
, INPUT CAP ACITANCE (pF)
1
3210
VBE, BASE–EMITTER VOLTAGE (Vdc)
0
2
f = 1 MHz
G
NF
, GAIN AT NOISE FIGURE (dB)
30
0.20.15 f, FREQUENCY (GHz)
0.3 0.6 1 1.5 2 3
25
20
15
10
0
NF, NOISE FIGURE (dB)
5
4
3
2
1
0
VCE = 6 V
IC = 5 mA
Figure 25. Gain at Noise Figure and Noise Figure
versus Collector Current
GNF @ 500 MHz
NF @ 1 GHz
100
20
10
0
NF, NOISE FIGURE (dB)
5
4
3
2
1
0
VCE = 6 V
20 30 40 50
IC, COLLECTOR CURRENT (mA)
GNF @ 1 GHz
NF @ 500 MHz
TYPICAL CHARACTERISTICS
MRF571
Page 10
MMBR571LT1 MRF571 MRF5711L T1 10
MOTOROLA RF DEVICE DATA
Figure 26. fT, Current Gain–Bandwidth Product
versus Collector Current
Figure 27. G
Amax
, Maximum Available Gain
versus Frequency
Figure 28. 1.0 dB Compression Point
and Third Order Intercept
Figure 29. GUmax and |S21|
2
versus Frequency
f , CURRENT GAIN-BANDWIDTH PRODUCT (GHz)
T
100
10
20 30 40 50
IC, COLLECTOR CURRENT (mA)
8
6
4
2
0
60 70 80 90 100
f = 1 GHz
VCE = 5 Vdc
8 Vdc
G
A
MAX, MAXIMUM AV AILABLE GAIN (dB)
0.60.4
30
f, FREQUENCY (GHz)
123
27 24 21 18 15 12
9 6 3
0
VCE = 8 V
IC = 50 mA
G
Amax
=
|S21| |S12|
(K
±
K2–1Ǹ),
K
1
P , OUTPUT POWER (dBm)
out
–5–10
+50
Pin, INPUT POWER (dBm)
+40
+30
+20
+10
+5
0 +5 +10 +15 + 20+25 +30 +35 +40
COMP. PT.
VCC = 8 Vdc
IC = 50 mA
f = 500 MHz
1000 MHz
3RD ORDER INTERCEPT
3RD ORDER PRODUCTS
30
0.20.15 f, FREQUENCY (GHz)
0.3 0.6 1 1.5 2 3
25
20
15
10
5
G
U
max AND |S
21
|
2
GAIN (dB)
|S21|
2
GUmax
VCE = 8 V
IC = 50 mA
G
Umax
=
|S21|
2
(1 – |S11|2)(1 – |S22|2)
1 dB
0
TYPICAL CHARACTERISTICS
MRF571
Page 11
11
MMBR571LT1 MRF571 MRF5711L T1MOTOROLA RF DEVICE DATA
Figure 30. Input/Output Reflection Coefficients
versus Frequency (GHz) VCE = 6.0 V, IC = 5.0 mA
Figure 31. Forward/Reverse Transmission
Coefficients versus Frequency (GHz)
VCE = 6.0 V, IC = 5.0 mA
+j50
+j100
+j150
+j250
+j500
–j500
–j250
–j150
–j100
–j50
–j25
–j10
0
+j10
+j25
25 50 150 250 50010
2
1.5
1
0.5
2
1.5
1
0.5
S
11
+90
°
+60
°
+30
°
0
°
–30
°
–60
°
–90
°
–120
°
–150
°
180
°
+150
°
+120
°
+105
°
+135
°
+165
°
–165
°
–135
°
–105
°
–75
°
–45
°
–15
°
+15
°
+45
°
+75
°
12 10 8 6 4 2
S
21
S
21
S
12
0.5
0.5
1
1.5
1.5
2
1
S
12
S
22
100
2
0.1
f = 0.2 GHz
f = 0.2 GHz
f = 0.2 GHz
f = 0.2 GHz
MRF571
V
I
f
S
11
S
21
S
12
S
22
V
CE
(Volts)
I
C
(mA)
f
(MHz)
|S11| φ |S21| φ |S12| φ |S22| φ
6.0
5 200
500 1000 1500 2000
0.74
0.62
0.61
0.65
0.70
–86 –143
178 158 140
10.5
5.5
3.0
2.0
1.6
129
97 78 62 51
0.06
0.08
0.09
0.11
0.14
48 33 37 44 51
0.69
0.41
0.28
0.26
0.27
–42 –59 –69 –88 –99
10 200
500 1000 1500 2000
0.64
0.58
0.59
0.63
0.67
–111
–160
168 151 134
15
6.9
3.7
2.5
2.0
118
93 77 64 53
0.04
0.06
0.09
0.12
0.16
44 42 52 56 57
0.53
0.27
0.16
0.16
0.16
–59 –77 –91 –113 –118
50 200
500 1000 1500 2000
0.56
0.57
0.60
0.62
0.66
–160
176 156 152 127
20.4
8.4
4.4
2.9
2.4
102
86 75 64 53
0.02
0.05
0.09
0.13
0.18
57 67 70 68 62
0.27
0.14
0.11
0.13
0.11
–98 –130 –164 –175 –178
8.0
5 200
500 1000 1500 2000
0.75
0.62
0.60
0.64
0.69
–83 –140 –179
159 141
10.7
5.1
3.7
2.1
1.7
129
98 78 62 52
0.06
0.08
0.09
0.10
0.13
49 34 38 45 52
0.71
0.43
0.31
0.29
0.29
–39 –54 –62 –80 –91
10 200
500 1000 1500 2000
0.64
0.52
0.52
0.52
0.57
–99 –152
170 150 133
15.1
7.1
3.7
2.5
2.0
120
94 76 62 51
0.05
0.07
0.10
0.13
0.18
46 45 54 56 55
0.54
0.32
0.15
0.16
0.16
–60 –75 –82 –108 –107
50 200
500 1000 1500 2000
0.52
0.52
0.56
0.54
0.59
–153
178 157 139 126
19.6
8.1
4.1
2.8
2.2
102
86 73 62 52
0.03
0.05
0.10
0.13
0.19
56 67 70 68 63
0.28
0.16
0.06
0.11
0.10
–92 –98 –130 –146 –137
Table 3. MRF571 Common Emitter S–Parameters
Page 12
MMBR571LT1 MRF571 MRF5711LT1 12
MOTOROLA RF DEVICE DATA
Figure 32. MRF571 Constant Gain and Noise Figure Contours
VCE = 6.0 V , IC = 5.0 mA f = 500 MHz
— REGION OF INSTABILITY
f (GHz) NF OPT (dB) Rn () NF50 (dB)
0.5 0.9 9.3 1.3
ΓMS NF OPT K
0.49 74° 0.58
VCE = 6.0 V , IC = 5.0 mA f = 1.0 GHz
f (GHz) NF OPT (dB) Rn () NF50 (dB)
1.0 1.5 7.5 2.2
ΓMS
0.89 –179°
ΓMS NF OPT
0.48 134°
ΓML
0.81 66°
+j50
+j100
+j150
+j250
+j500
–j250
–j150
–j100
–j50
–j25
–j10
0
+j10
+j25
–j500
25 50 25010 500150
17
16
0.9 1
100
Γ
MS NF OPT
18
1.5
2
+j50
+j100
+j150
+j250
+j500
–j250
–j150
–j100
–j50
–j25
–j10
0
+j10
+j25
–j500
25 50 25010 500150100
3
2
2.5
1.5
Γ
MS NF OPT
10
12
14
Γ
MS
Page 13
13
MMBR571LT1 MRF571 MRF5711L T1MOTOROLA RF DEVICE DATA
Figure 33. MRF571 Test Circuit Schematic
R1
FB
C1, C4, C5, C6, C8, C9 — 100 pF Chip Capacitor C2, C3 — 0.8–8.0 pF Johanson Capacitor C7, C10 — 10 µF Tantalum Capacitor R1 — 1.0 kOhms Res. RFC — VK–200, Ferroxcube FB — Ferrite Bead, Ferroxcube 56–590–65/3B Board Material — 0.0625 Glass Teflon, εr = 2.55
TL1, TL7, TL8 — Microstrip 0.162 x 0.600
TL2 — Microstrip 0.162 x 1.060 TL3 — Microstrip 0.162 x 0.700 TL4, TL5 — Microstrip 0.162 x 0.440 TL6 — Microstrip 0.162 x 1.140 TL8, TL9 — Microstrip 0.020 x 2.130
RFC RFC
V
BB
V
CC
C7 C8 C9 C10
FB
C6C5
TL9
TL10
TL1
C
1
TL2 TL3
TL4 TL5 TL6 TL7
C 4
TL8
RF
INPUT
RF
OUTPUT
D.U.T.
C2 C3
Page 14
MMBR571LT1 MRF571 MRF5711L T1 14
MOTOROLA RF DEVICE DATA
P ACKAGE DIMENSIONS
CASE 318–08
ISSUE AF
MMBR571L T1
D
J
K
L
A
C
B
S
H
GV
3
1
2
DIMAMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
CASE 317–01
ISSUE E MRF571
NOTES:
1. DIMENSION D NOT APPLICABLE IN ZONE N.
STYLE 2:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
4. EMITTER
3
1
42
SEATING PLANE
L
K
D
A
N
G
F
C
4 PL
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 4.44 5.21 0.175 0.205 C 1.90 2.54 0.075 0.100 D 0.84 0.99 0.033 0.039 F 0.20 0.30 0.080 0.012 G 0.76 1.14 0.030 0.045 K 7.24 8.13 0.285 0.320 L 10.54 11.43 0.415 0.450 N ––– 1.65 ––– 0.065
Page 15
15
MMBR571LT1 MRF571 MRF5711L T1MOTOROLA RF DEVICE DATA
CASE 318A–05
ISSUE R
MRF5711LT1
STYLE 1:
PIN 1. COLLECTOR
2. EMITTER
3. EMITTER
4. BASE
DIMAMIN MAX MIN MAX
INCHES
2.80 3.04 0.110 0.120
MILLIMETERS
B 1.20 1.39 0.047 0.055 C 0.84 1.14 0.033 0.045 D 0.39 0.50 0.015 0.020 F 0.79 0.93 0.031 0.037 G 1.78 2.03 0.070 0.080 H 0.013 0.10 0.0005 0.004 J 0.08 0.15 0.003 0.006 K 0.46 0.60 0.018 0.024 L 0.445 0.60 0.0175 0.024 R 0.72 0.83 0.028 0.033 S 2.11 2.48 0.083 0.098
NOTES:
4. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
5. CONTROLLING DIMENSION: MILLIMETER.
G
S
R
C
J
A
L
F
D
B
1
34
2
H
K
Page 16
MMBR571LT1 MRF571 MRF5711L T1 16
MOTOROLA RF DEVICE DATA
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MMBR571L T1/D
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