Datasheet MMBR5711LT1, MMBR571LT1 Datasheet (Motorola)

1

MMBR571LT1 MRF571 MRF5711LT1MOTOROLA RF DEVICE DATA

The RF Line

   

Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This Motorola series of small–signal plastic transistors offers superior quality and performance at low cost.

• High Gain–Bandwidth Product

fT = 8.0 GHz (Typ) @ 50 mA

• Low Noise Figure

NF

min

= 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571)

• High Gain

GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1)

• High Power Gain

G

pe (matched)

= 13.5 dB (Typ) (MRF5711LT1)

• State–of–the–Art Technology

Fine Line Geometry Ion–Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation

• Available in tape and reel packaging options:

T1 suffix = 3,000 units per reel

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter V oltage V

CEO

10 Vdc

Collector–Base Voltage V

CBO

20 Vdc

Emitter–Base Voltage V

EBO

3.0 Vdc

Collector Current — Continuous I

C

80 mA

Total Device Dissipation @ T

case

= 75°C

MMBR571L T1, MRF5711LT1

Derate linearly above T

case

= 75°C @

P

D(max)

0.33

4.44WmW/°C

Total Device Dissipation (1) @ TC = 75°C

Derate above 75°C MRF571

P

D

0.58

7.73

Watts

mW/°C

Operating and Storage Temperature T

stg

–55 to

+150

°C

THERMAL CHARACTERISTICS

Rating Symbol Max Unit

Thermal Resistance, Junction to Case

MRF5711LT1, MMBR571LT1

R

θJC

225 °C/W

Thermal Resistance, Junction to Case MRF571 R

θJC

130 °C/W

Maximum Junction Temperature T

Jmax

150 °C

DEVICE MARKING

MMBR571L T1 = 7X MRF5711LT1 = 02

NOTE:

1. Case temperature measured on collector lead immediately adjacent to body of package.

Order this document

by MMBR571LT1/D



SEMICONDUCTOR TECHNICAL DATA







IC = 80 mA

LOW NOISE

HIGH–FREQUENCY

TRANSISTORS

CASE 318–08, STYLE 6

SOT–23

LOW PROFILE

MMBR571L T1

CASE 318A–05, STYLE 1

SOT–143

LOW PROFILE

MRF5711LT1

CASE 317–01, STYLE 2

MACRO–X

MRF571

 Motorola, Inc. 1997

REV 8

MMBR571LT1 MRF571 MRF5711L T1 2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown V oltage (IC = 1.0 mA, IB = 0) V

(BR)CEO

10 12 — Vdc

Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V

(BR)CBO

20 — — Vdc

Emitter–Base Breakdown Voltage (IE = 50 µAdc, IC = 0) V

(BR)EBO

2.5 — — Vdc

Collector Cutoff Current (VCB = 8.0 Vdc, IE = 0) I

CBO

— — 10 µAdc

ON CHARACTERISTICS

DC Current Gain (IC = 30 mAdc, VCE = 5.0 Vdc) h

FE

50 — 300 —

DYNAMIC CHARACTERISTICS

Collector–Base Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MMBR571L T1 (VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz) MRF5711LT1, MRF571

C

cb

— —

0.7

0.75

1.0

pF

Current Gain–Bandwidth Produc

(VCE = 5.0 Vdc, IC = 50 mAdc, f = 1.0 GHz) MMBR571LT1 (VCE = 8.0 Vdc, IC = 50 mAdc, f = 1.0 GHz) MRF5711LT1, MRF571

f

T

— —

8.0

— —

GHz

FUNCTIONAL TESTS

Gain @ Noise Figure MRF571 f = 0.5 GHz

(IC = 10 mAdc, VCE = 6.0 Vdc) MRF571 f = 1.0 GHz

G

NF

— 10

16.5 12

— —

dB

Noise Figure MRF571 f = 0.5 GHz

(IC = 10 mAdc, VCE = 6.0 Vdc) MRF571 f = 1.0 GHz

f = 2.0 GHz

NF —

— —

1.0

1.5

2.8

—

2.0 —

dB

Gain @ Noise Figure

(IC = 10 mAdc, VCE = 5.0 Vdc) MMBR571LT1 f = 0.5 GHz

f = 1.0 GHz

(IC = 10 mA, VCE = 6.0 Vdc) MRF5711LT1 f = 1.0 GHz

G

NF

— — —

16.5

10.5

13.5

— — —

dB

Noise Figure

(IC = 10 mAdc, VCE = 5.0 Vdc) MMBR571LT1 f = 0.5 GHz

f = 1.0 GHz

(IC = 10 mAdc, VCE = 6.0 Vdc) MRF5711LT1 f = 1.0 GHz

NF

— — —

2.0

2.6

2.2

— — —

dB

Noise Figure

(VCE = 6.0 V , IC = 10 mA, f = 1.0 GHz) MRF5711LT1

NF

min

— 1.6 — dB

Power Gain in 50 Ω System (VCE = 6.0 V , IC = 10 mA, f = 1.0 GHz)

MRF5711LT1

|S21|

2

9.0 10 — dB

Figure 1. Maximum Available Gain

versus Frequency

Figure 2. Current Gain–Bandwidth versus

Collector Current @ 1.0 GHz

25

20

15

10

5

0

0.4 0.6 1 2 3 f, FREQUENCY (GHz)

G

A

MAX, MAXIMUM AV AILABLE GAIN (dB)

VCE = 5 V

IC = 30 mA

G

A

MAX

+

|

S

21

|

|S12|

(k"(k

2

–

1) ), kw1

Ǹ

10

8

6

4

2

0

IC, COLLECTOR CURRENT (mA)

f

T

, CURRENT GAIN-BANDWIDTH PRODUCT (GHz)

10 20 30 40 50 60 70 80 90 100

VCE = 5 V

f = 1 GHz

TYPICAL CHARACTERISTICS

MMBR571LT1

3

MMBR571LT1 MRF571 MRF5711L T1MOTOROLA RF DEVICE DATA

Figure 3. Input Capacitance versus

Emitter Base Voltage

SOT–23 MMBR571LT1

C

ib

, INPUT CAP ACITANCE (pF)

VBE, BASE–EMITTER VOLTAGE (Vdc)

4

1

3

2

1

23

0

f = 1 MHz

C

ib

C

cb

, OUTPUT CAP ACITANCES (pF), C

ob

Vcb, COLLECTOR–BASE VOL TAGE (Vdc)

2.5

0

2

1.5

1

0.5

0

12 345678 910

C

ob

C

cb

f = 1 MHz

G

NF

, GAIN AT NOISE FIGURE (dB)

0

IC, COLLECTOR CURRENT (mA)

20

16

12

8

4

0

10 20 30 40 50

f = 500 MHz

VCE = 5 V

TYPICAL CHARACTERISTICS

MMBR571LT1

Figure 4. Output Capacitances versus

Collector–Base Voltage

Figure 5. Gain at Noise Figure versus

Collector Current

1 GHz

Figure 6. Noise Figure versus Collector Current

SOT–23 MMBR571LT1

SOT–23 MMBR571LT1 SOT–23 MMBR571LT1

NF, NOISE FIGURE (dB)

0

IC, COLLECTOR CURRENT (mA)

5

4

3

2

1

0

10 20 30 40 50

f = 500 MHz

f = 1 GHz

VCE = 5 V

G

NF

, GAIN AT NOISE FIGURE (dB)

0.2 f, FREQUENCY (GHz)

25

20

15

10

5

0

0.3 0.5 1 1.5 2

NF, NOISE FIGURE (dB)

5

4

3

2

1

0

VCE = 5 V

IC = 10 mA

G

NF

25

0.2 f, FREQUENCY (GHz)

20

15

10

5

0.3 0.6 1 2

30

1.5

GUMAX =

|S21|

2

(1 – |S11|2)(1 – |S22|2)

GUMAX

|S21|

2

VCE = 5 V

IC = 30 mA

G

U

MAX AND |S

21

|

2

(dB)

Figure 7. Gain at Noise Figure and Noise

Figure versus Frequency

Figure 8. Maximum Unilateral Gain and

Insertion Gain versus Frequency

MMBR571LT1 MRF571 MRF5711LT1 4

MOTOROLA RF DEVICE DATA

Figure 9. Collector–Base Capacitance

versus Collector–Base Voltage

Figure 10. 50 W Noise Figure

versus Frequency

Figure 11. Functional Circuit Schematic

*BIAS

TEE

**SLUG TUNER

*BIAS

TEE

**SLUG TUNER

RF OUTPUT

RF INPUT

V

BE

VCE = 6 Vdc

*

D.U.T.

**MICROLAB/FXR

**SF — 11N < 1 GHz

**SF — 31N > 1 GHz

C

cb

, COLLECTOR-BASE CAP ACITANCE (pF)

2

1.6

1.2

0.8

0.4

0

1086420

Vcb, COLLECTOR–BASE VOL TAGE (VOLTS)

0.15 f, FREQUENCY (GHz)

0.2 0.5 1 2

NF, NOISE FIGURE (dB)

5

4

3

2

1

0

f = 1 MHz

NF

VCE = 6 Vdc

IC = 5 mA

CKT = HP 11608A

Zo = 50

Ω

Γ

S

=

Γ

L

= 0

*MICROLAB

*HW–XXN *AS APPLICABLE

TYPICAL CHARACTERISTICS

MRF5711LT1

5

MMBR571LT1 MRF571 MRF5711L T1MOTOROLA RF DEVICE DATA

G

NF

Figure 12. Gain and Noise Figure

versus Frequency

Figure 13. Gain and Noise Figure

versus Collector Current

Figure 14. Gain and Noise Figure

versus Collector Current

Figure 15. Gain Bandwidth Product

versus Collector Current

Figure 16. G

Umax

and |S21|

2

versus Frequency

Figure 17. Insertion Gain versus

Collector Current

G

NF

, GAIN (dB)

40

32

0.15 f, FREQUENCY (GHz)

0.2 0.5 1 2

NF, NOISE FIGURE (dB)

5

4

3

2

1

0

24

16

8

0

G

NF

VCE = 6 Vdc

IC = 5 mA

CKT = FIGURE 3

G

NF

, GAIN (dB)

16

IC, COLLECTOR CURRENT (mA)

0

NF, NOISE FIGURE (dB)

4 3 2 1

12

8

4

0

10 20 30 40 50

G

NF

VCE = 6 Vdc f = 1 GHz CKT = FIGURE 3

G

NF

, GAIN (dB)

IC, COLLECTOR CURRENT (mA)

0

NF, NOISE FIGURE (dB)

4 3 2 1

24

10 20 30 40 50

18

12

6

0

VCE = 6 Vdc f = 500 MHz CKT = FIGURE 3

NF

f , GAIN BANDWIDTH PRODUCT (GHz)

T

IC, COLLECTOR CURRENT (mA)

0

10

8

4

0

20 6040 80 100

6

2

f = 1 GHz

VCE = 8 Vdc

Zo = 50

Ω

40

32

0.15

f, FREQUENCY (GHz)

0.2 0.5 1 2

24

16

8

0

|S

21

|

2

, GAIN (dB)G

Umax

AND

G

Umax

=

|S21|

2

(1 – |S11|2)(1 – |S22|2)

G

Umax

|S21|

2

VCE = 8 Vdc

IC = 50 mA

Zo = 50

Ω

|S

21

|

2

, INSERTION GAIN (dB)

32

24

16

8

0

IC, COLLECTOR CURRENT (mA)

0 1020304050

Z

o

= 50

Ω

VCE = 6 Vdc

f = 200 MHz

1 GHz

500 MHz

TYPICAL CHARACTERISTICS

MRF5711LT1

2 GHz

MMBR571LT1 MRF571 MRF5711L T1 6

MOTOROLA RF DEVICE DATA

+j50

+j100

+j150

+j250

+j500

–j500

–j250

–j150

–j100

–j50

–j25

–j10

0

+j10

+j25

+90

°

+120

°

+150

°

180

°

0

°

–150

°

–120

°

–90

°

–60

°

–30

°

+30

°

+60

°

S

11

2

1

1.5

0.5

1

S

22

10 25 50 100 150 250 500

0.5

S

21

0.5

2

1.5

S

12

1

1.5

S

21

S

12

0.1 0.2 0.3

14 12 8 6 4 210

0.4

f = 0.2 GHz

Figure 18. Input/Output Reflection Coefficients

versus Frequency

VCE = 5.0 V, IC = 30 mA

MMBR571LT1

Figure 19. Forward/Reverse Transmission

Coefficients versus Frequency

VCE = 5.0 V, IC = 30 mA

f = 0.2 GHz

V

I

f

S

11

S

21

S

12

S

22

V

CE

(Volts)

I

C

(mA)

f

(MHz)

|S11|

∠Ăφ

|S21|

∠Ăφ

|S12|

∠Ăφ

|S22|

∠Ăφ

5.0

5.0 200 500

1000 1500 2000

0.68

0.52

0.50

0.51

0.52

–82 – –142–

179 161 143

8.41

4.62

2.57

1.82

1.48

126

93 72 57 45

0.07

0.10

0.14

0.19

0.24

53 46 53 58 59

0.61

0.35

0.26

0.24

0.22

–45 –60 –71 –77 –86

15 200

500

1000 1500 2000

0.46

0.43

0.44

0.45

0.46

–125– –169–

168 152 137

13.65

6.03

3.20

2.21

1.80

108

86 72 58 48

0.05

0.09

0.16

0.22

0.29

60 66 67 64 59

0.35

0.17

0.14

0.11

0.10

–73 –94 –111 –118 –131

30 200

500

1000 1500 2000

0.42

0.41

0.42

0.44

–148– –177–

165 151 135

14.79

6.31

3.35

2.29

1.84

102

84 71 59 48

0.04

0.09

0.16

0.23

0.30

68 72 70 65 60

0.26

0.14

0.12

0.11

0.10

–87 –115 –135 –144 –157

50 200

500

1000 1500 2000

0.41

0.42

0.43

0.44

0.45

–159–

179 163 148 134

15.14

6.38

3.35

2.32

1.84

98 83 70 58 48

0.04

0.09

0.16

0.23

0.30

73 75 71 66 60

0.21

0.13

0.12

0.10

0.09

–96 –124 –143 –151 –163

Table 1. MMBR571LT1 Common Emitter S–Parameters

7

MMBR571LT1 MRF571 MRF5711LT1MOTOROLA RF DEVICE DATA

Figure 20. MRF5711LT1 Constant Gain and Noise Figure Contours

(f = 0.5 GHz)

Figure 21. MRF5711LT1 Constant Gain and noise Figure Contours

(f = 1.0 GHz)

ΓMS NF OPT

0.36 ∠ 104°Rn7K0.63

f (GHz)

0.5

NF OPT

1.20 dB

VCE = 5 V IC = 10 mA

= Area of Instability

j1.0

j2.0j0.5

j0.2

–j0.2

–j0.5

–j1.0

–j2.0

1.2

19

18

17 1.6

1.8

1.4

20.4

0.2

0.5 1.0 2.0

ΓMS NF OPT

0.20 ∠ 162°Rn8K0.94

f (GHz)

1.0

NF OPT

1.70 dB

0.2 0.5 1.0 2.0

j1.0

j2.0j0.5

j0.2

–j0.2

–j0.5

–j1.0

–j2.0

VCE = 5 V IC = 10 mA

= Area of Instability

1.7

1.9

2.1

2.3

6.4 15 14

MMBR571LT1 MRF571 MRF5711L T1 8

MOTOROLA RF DEVICE DATA

V

I

f

S

11

S

21

S

12

S

22

V

CE

(Vdc)

I

C

(mA)

f

(MHz)

|S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ

6.0

5.0 200 500

1000 1500 2000

0.79

0.72

0.69

0.66

0.65

–90 –144 –177

164 147

10.9

5.7

3.0

2.0

1.6

128

96 75 59 47

0.06

0.08

0.09

0.10

0.12

46 28 28 32 38

0.70

0.42

0.31

0.34

0.32

–45 –66 –77 –89 –94

10 200

500

1000 1500 2000

0.72

0.69

0.67

0.64

–115 –160

174 159 143

15.2

6.9

3.6

2.4

1.8

118

92 74 60 49

0.05

0.06

0.08

0.10

0.12

41 34 42 46 50

0.55

0.30

0.21

0.23

0.20

–66 –92 –108 –114 –116

50 200

500

1000 1500 2000

0.67

0.66

0.63

0.58

–159

179 174 151 138

20

8.2

3.8

2.7

2.1

102

85 72 61 51

0.02

0.04

0.07

0.10

0.14

48 58 65 64 62

0.33

0.21

0.22

0.17

–111 –142 –158 –158 –165

8.0

5.0 200 500

1000 1500 2000

0.80

0.72

0.70

0.66

0.61

–87 –141 –177

166 149

11.1

5.9

3.1

2.1

1.6

130

97 75 60 47

0.06

0.08

0.09

0.10

0.12

47 30 28 32 39

0.71

0.44

0.33

0.35

–42 –60 –68 –80 –85

10 200

500

1000 1500 2000

0.72

0.68

0.66

0.64

0.60

–113 –159

175 160 144

15.6

7.2

3.7

2.5

2.0

119

92 74 61 49

0.05

0.06

0.08

0.09

0.13

42 34 41 47 50

0.56

0.31

0.21

0.23

0.21

–61 –82 –92 –101 –103

50 200

500

1000 1500 2000

0.66

0.65

0.64

0.61

0.58

–156 –179

164 153 137

20.9

8.6

4.3

2.9

2.3

103

85 72 61 51

0.02

0.04

0.07

0.10

0.13

48 58 65 65 64

0.31

0.19

0.16

0.17

0.14

–101 –128 –144 –142 –145

Table 2. MRF5711LT1 Common Emitter S–Parameters

9

MMBR571LT1 MRF571 MRF5711LT1MOTOROLA RF DEVICE DATA

G

NF

, GAIN AT NOISE FIGURE (dB)

Figure 22. Ccb, Collector–Base Capacitance

versus Voltage

Figure 23. Cib, Input Capacitance

versus Emitter Base Voltage

Figure 24. Gain at Noise Figure and Noise Figure

versus Frequency

C

cb

, COLLECTOR-BASE CAP ACITANCE (pF)

1.25

1

0.75

0.5

0.25

0

109876543210

Vcb, COLLECTOR–BASE VOL TAGE (Vdc)

G

NF

f = 1 MHz

C

ib

, INPUT CAP ACITANCE (pF)

1

3210

VBE, BASE–EMITTER VOLTAGE (Vdc)

0

2

f = 1 MHz

G

NF

, GAIN AT NOISE FIGURE (dB)

30

0.20.15 f, FREQUENCY (GHz)

0.3 0.6 1 1.5 2 3

25

20

15

10

0

NF, NOISE FIGURE (dB)

5

4

3

2

1

0

VCE = 6 V

IC = 5 mA

Figure 25. Gain at Noise Figure and Noise Figure

versus Collector Current

GNF @ 500 MHz

NF @ 1 GHz

100

20

10

0

NF, NOISE FIGURE (dB)

5

4

3

2

1

0

VCE = 6 V

20 30 40 50

IC, COLLECTOR CURRENT (mA)

GNF @ 1 GHz

NF @ 500 MHz

TYPICAL CHARACTERISTICS

MRF571

MMBR571LT1 MRF571 MRF5711L T1 10

MOTOROLA RF DEVICE DATA

Figure 26. fT, Current Gain–Bandwidth Product

versus Collector Current

Figure 27. G

Amax

, Maximum Available Gain

versus Frequency

Figure 28. 1.0 dB Compression Point

and Third Order Intercept

Figure 29. GUmax and |S21|

2

versus Frequency

f , CURRENT GAIN-BANDWIDTH PRODUCT (GHz)

T

100

10

20 30 40 50

IC, COLLECTOR CURRENT (mA)

8

6

4

2

0

60 70 80 90 100

f = 1 GHz

VCE = 5 Vdc

8 Vdc

G

A

MAX, MAXIMUM AV AILABLE GAIN (dB)

0.60.4

30

f, FREQUENCY (GHz)

123

27 24 21 18 15 12

9 6 3

0

VCE = 8 V

IC = 50 mA

G

Amax

=

|S21| |S12|

(K

±

K2–1Ǹ),

K

≥

1

P , OUTPUT POWER (dBm)

out

–5–10

+50

Pin, INPUT POWER (dBm)

+40

+30

+20

+10

+5

0 +5 +10 +15 + 20+25 +30 +35 +40

COMP. PT.

VCC = 8 Vdc

IC = 50 mA

f = 500 MHz

1000 MHz

3RD ORDER INTERCEPT

3RD ORDER PRODUCTS

30

0.20.15 f, FREQUENCY (GHz)

0.3 0.6 1 1.5 2 3

25

20

15

10

5

G

U

max AND |S

21

|

2

GAIN (dB)

|S21|

2

GUmax

VCE = 8 V

IC = 50 mA

G

Umax

=

|S21|

2

(1 – |S11|2)(1 – |S22|2)

1 dB

0

TYPICAL CHARACTERISTICS

MRF571

11

MMBR571LT1 MRF571 MRF5711L T1MOTOROLA RF DEVICE DATA

Figure 30. Input/Output Reflection Coefficients

versus Frequency (GHz) VCE = 6.0 V, IC = 5.0 mA

Figure 31. Forward/Reverse Transmission

Coefficients versus Frequency (GHz)

VCE = 6.0 V, IC = 5.0 mA

+j50

+j100

+j150

+j250

+j500

–j500

–j250

–j150

–j100

–j50

–j25

–j10

0

+j10

+j25

25 50 150 250 50010

2

1.5

1

0.5

2

1.5

1

0.5

S

11

+90

°

+60

°

+30

°

0

°

–30

°

–60

°

–90

°

–120

°

–150

°

180

°

+150

°

+120

°

+105

°

+135

°

+165

°

–165

°

–135

°

–105

°

–75

°

–45

°

–15

°

+15

°

+45

°

+75

°

12 10 8 6 4 2

S

21

S

21

S

12

0.5

1

1.5

2

1

S

12

S

22

100

2

0.1

f = 0.2 GHz

MRF571

V

I

f

S

11

S

21

S

12

S

22

V

CE

(Volts)

I

C

(mA)

f

(MHz)

|S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ

6.0

5 200

500 1000 1500 2000

0.74

0.62

0.61

0.65

0.70

–86 –143

178 158 140

10.5

5.5

3.0

2.0

1.6

129

97 78 62 51

0.06

0.08

0.09

0.11

0.14

48 33 37 44 51

0.69

0.41

0.28

0.26

0.27

–42 –59 –69 –88 –99

10 200

500 1000 1500 2000

0.64

0.58

0.59

0.63

0.67

–111

–160

168 151 134

15

6.9

3.7

2.5

2.0

118

93 77 64 53

0.04

0.06

0.09

0.12

0.16

44 42 52 56 57

0.53

0.27

0.16

–59 –77 –91 –113 –118

50 200

500 1000 1500 2000

0.56

0.57

0.60

0.62

0.66

–160

176 156 152 127

20.4

8.4

4.4

2.9

2.4

102

86 75 64 53

0.02

0.05

0.09

0.13

0.18

57 67 70 68 62

0.27

0.14

0.11

0.13

0.11

–98 –130 –164 –175 –178

8.0

5 200

500 1000 1500 2000

0.75

0.62

0.60

0.64

0.69

–83 –140 –179

159 141

10.7

5.1

3.7

2.1

1.7

129

98 78 62 52

0.06

0.08

0.09

0.10

0.13

49 34 38 45 52

0.71

0.43

0.31

0.29

–39 –54 –62 –80 –91

10 200

500 1000 1500 2000

0.64

0.52

0.57

–99 –152

170 150 133

15.1

7.1

3.7

2.5

2.0

120

94 76 62 51

0.05

0.07

0.10

0.13

0.18

46 45 54 56 55

0.54

0.32

0.15

0.16

–60 –75 –82 –108 –107

50 200

500 1000 1500 2000

0.52

0.56

0.54

0.59

–153

178 157 139 126

19.6

8.1

4.1

2.8

2.2

102

86 73 62 52

0.03

0.05

0.10

0.13

0.19

56 67 70 68 63

0.28

0.16

0.06

0.11

0.10

–92 –98 –130 –146 –137

Table 3. MRF571 Common Emitter S–Parameters

MMBR571LT1 MRF571 MRF5711LT1 12

MOTOROLA RF DEVICE DATA

Figure 32. MRF571 Constant Gain and Noise Figure Contours

VCE = 6.0 V , IC = 5.0 mA f = 500 MHz

— REGION OF INSTABILITY

f (GHz) NF OPT (dB) Rn (Ω) NF50 Ω (dB)

0.5 0.9 9.3 1.3

ΓMS NF OPT K

0.49 ∠ 74° 0.58

VCE = 6.0 V , IC = 5.0 mA f = 1.0 GHz

f (GHz) NF OPT (dB) Rn (Ω) NF50 Ω (dB)

1.0 1.5 7.5 2.2

ΓMS

0.89 ∠ –179°

ΓMS NF OPT

0.48 ∠ 134°

ΓML

0.81 ∠ 66°

+j50

+j100

+j150

+j250

+j500

–j250

–j150

–j100

–j50

–j25

–j10

0

+j10

+j25

–j500

25 50 25010 500150

17

16

0.9 1

100

Γ

MS NF OPT

18

1.5

2

+j50

+j100

+j150

+j250

+j500

–j250

–j150

–j100

–j50

–j25

–j10

0

+j10

+j25

–j500

25 50 25010 500150100

3

2

2.5

1.5

Γ

MS NF OPT

10

12

14

Γ

MS

13

MMBR571LT1 MRF571 MRF5711L T1MOTOROLA RF DEVICE DATA

Figure 33. MRF571 Test Circuit Schematic

R1

FB

C1, C4, C5, C6, C8, C9 — 100 pF Chip Capacitor C2, C3 — 0.8–8.0 pF Johanson Capacitor C7, C10 — 10 µF Tantalum Capacitor R1 — 1.0 kOhms Res. RFC — VK–200, Ferroxcube FB — Ferrite Bead, Ferroxcube 56–590–65/3B Board Material — 0.0625″ Glass Teflon, εr = 2.55

TL1, TL7, TL8 — Microstrip 0.162″ x 0.600″

TL2 — Microstrip 0.162″ x 1.060″ TL3 — Microstrip 0.162″ x 0.700″ TL4, TL5 — Microstrip 0.162″ x 0.440″ TL6 — Microstrip 0.162″ x 1.140″ TL8, TL9 — Microstrip 0.020″ x 2.130″

RFC RFC

V

BB

V

CC

C7 C8 C9 C10

FB

C6C5

TL9

TL10

TL1

C

1

TL2 TL3

TL4 TL5 TL6 TL7

C 4

TL8

RF

INPUT

RF

OUTPUT

D.U.T.

C2 C3

MMBR571LT1 MRF571 MRF5711L T1 14

MOTOROLA RF DEVICE DATA

P ACKAGE DIMENSIONS

CASE 318–08

ISSUE AF

MMBR571L T1

D

J

K

L

A

C

B

S

H

GV

3

1

2

DIMAMIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100

J 0.0034 0.0070 0.085 0.177

K 0.0140 0.0285 0.35 0.69

L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

CASE 317–01

ISSUE E MRF571

NOTES:

1. DIMENSION D NOT APPLICABLE IN ZONE N.

STYLE 2:

PIN 1. COLLECTOR

2. EMITTER

3. BASE

4. EMITTER

3

1

42

SEATING PLANE

L

K

D

A

N

G

F

C

4 PL

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A 4.44 5.21 0.175 0.205 C 1.90 2.54 0.075 0.100 D 0.84 0.99 0.033 0.039 F 0.20 0.30 0.080 0.012 G 0.76 1.14 0.030 0.045 K 7.24 8.13 0.285 0.320 L 10.54 11.43 0.415 0.450 N ––– 1.65 ––– 0.065

15

MMBR571LT1 MRF571 MRF5711L T1MOTOROLA RF DEVICE DATA

CASE 318A–05

ISSUE R

MRF5711LT1

STYLE 1:

PIN 1. COLLECTOR

2. EMITTER

3. EMITTER

4. BASE

DIMAMIN MAX MIN MAX

INCHES

2.80 3.04 0.110 0.120

MILLIMETERS

B 1.20 1.39 0.047 0.055 C 0.84 1.14 0.033 0.045 D 0.39 0.50 0.015 0.020 F 0.79 0.93 0.031 0.037 G 1.78 2.03 0.070 0.080 H 0.013 0.10 0.0005 0.004 J 0.08 0.15 0.003 0.006 K 0.46 0.60 0.018 0.024 L 0.445 0.60 0.0175 0.024 R 0.72 0.83 0.028 0.033 S 2.11 2.48 0.083 0.098

NOTES:

4. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

5. CONTROLLING DIMENSION: MILLIMETER.

G

S

R

C

J

A

L

F

D

B

1

34

2

H

K

MMBR571LT1 MRF571 MRF5711L T1 16

MOTOROLA RF DEVICE DATA

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MMBR571L T1/D

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