Datasheet MMBFJ201 Specification

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MMBFJ201 / MMBFJ202 N-Channel General-Purpose Amplifier

MMBFJ201 / MMBFJ202 — N-Channel General-Purpose Amplifier

January 2015

Description

SOT-23

Note: Source & Drain

are interchangeable

This device is designed primarily for low level audio and general-purpose applications with high impedance signal sources. Sourced from process 52.

Ordering Information

Part Number Top Mark Package Packing Method

MMBFJ201 62P SOT-23 3L Tape and Reel MMBFJ202 62Q SOT-23 3L Tape and Reel

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating co nd iti ons an d s tres si ng the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T

(1), (2)

= 25°C unless otherwise noted.

Symbol Parameter Value Unit

, T

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations.

Drain-Gate V ol tage 40 V Gate-Source Voltage -40 V Forward Gate Current 50 mA Operating and Storage Junction Temperature Range -55 to 150 °C

STG

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MMBFJ201 / MMBFJ202 — N-Channel General-Purpose Amplifier

Thermal Characteristics

(3)

Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Max. Unit

θJA

Note:

3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm

Total Device Dissipation 350 mW Derate Above 25°C2.8mW/°C Thermal Resistance, Junction-to-Ambient 357 °C/W

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Typ. Max. Unit

Off Characteristics

(BR)GSS

GSS

GS(off)

Gate-Source Breakdown Voltage IG = -1.0 μA, V Gate Reverse Current V

Gate-Source Cut-Off V oltage V

On Characteristics

DSS

Zero-Gate Voltage Drain

(4)

Current

Small Signal Characteristics

Forward Transfer Admittanc e VDS = 20 V, f = 1.0 kHz

= -20 V, V

= 20 V, ID = 10 nA

= 20 V, I

= 0 -40 V

= 0 -100 pA

MMBFJ201 -0.3 -1.5 MMBFJ202 -0.8 -4.0

= 0

MMBFJ201 0.2 1.0 MMBFJ202 0.9 4.5

MMBFJ201 500 MMBFJ202 1000

μmhos

Note:

4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%

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Typical Performance Characteristics

Figure 1. Parameter Interactions Figure 2. Common Drain-Source

MMBFJ201 / MMBFJ202 — N-Channel General-Purpose Amplifier

Figure 3. Transfer Characteristics Figure 4. Transfer Characteristics

Figure 5. Leakage Current vs. Voltage Figure 6. Noise Voltage vs. Frequency

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Typical Performance Characteristics (Continued)

MMBFJ201 / MMBFJ202 — N-Channel General-Purpose Amplifier

Figure 7. Transconductance vs. Drain Current

Figure 9. Capacitance vs. Voltage

Figure 8. Output Conductance vs. Drain Current

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Common Source Characteristics

os)

Figure 10. Input Admittance Figure 11. Forward Transadmittance

MMBFJ201 / MMBFJ202 — N-Channel General-Purpose Amplifier

Figure 12. Output Admittance

Figure 13. Reverse Transadmittance

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Common Gate Characteristics

Figure 14. Input Admittance Figure 15. Forward Transadmittance

MMBFJ201 / MMBFJ202 — N-Channel General-Purpose Amplifier

Figure 16. Output Admittance

Figure 17. Reverse Transadmittance

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Physical Dimensions

LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30

+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

MMBFJ201 / MMBFJ202 — N-Channel General-Purpose Amplifier

Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE

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Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I73

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