Datasheet MMBFJ108 Datasheet (Fairchild Semiconductor)

J108/J109/J110/MMBFJ108

N-Channel Switch

• This device is designed for digital switching
applications where very low on resistance is
mandatory.

• Sourced from Process 58.

1

1. Drain 2. Source 3. Gate

TO-92

3

2

1

SuperSOT-3

1. Drain 2. Source 3. Gate

Marking: I8

J108/J109/J110/MMBFJ108

Absolute Maximum Ratings * T

=25°C unless otherwise noted

A

Symbol Parameter Value Units

V

DG

V

GS

I

GF

, T

T

J

stg

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics

Drain-Gate Voltage 25 V
Gate-Source Voltage -25 V
Forward Gate Current 10 mA
Operating and Storage Junction Temperature Range -55 ~ +150 °C

TA=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units

Off Characteristics

V

(BR)GSS

I

GSS

(off) Gate-Sour ce C u t o ff Voltage VDS = 15V, ID = 10nA 108

V

GS

Gate-Source Breakdwon Voltage IG = -10µA, VDS = 0 -25 V
Gate Reverse Current VGS = -15V, VDS = 0

= -15V, VDS = 0, TA = 100°C

V

GS

109
110

-3.0

-2.0

-0.5

-3.0

-200

-10

-6.0

-4.0

On Characteristics

I

DSS

(on) Drain-Source On Resistance VDS ≤ 0.1V, VGS = 0 108

r

DS

Zero-Gate Voltage Drain Current * VDS = 15V, IGS = 0 108

109
110

109
110

80
40
10

8.0
12
18

Small Signal Characteristics

(on)

C

dg

C

(off)

sg

(on) Drain-Gate Off Capacitance VDS = 0, VGS = -10, f = 1.0MHz 15 pF

C

dg

(off) Source-Gate Off Capacitance VDS = 0, VGS = -10, f = 1.0MHz 15 pF

C

sg

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

Drain Gate & Source Gate On
Capacitance

= 0, VGS = 0, f = 1.0MHz 85 pF

V

DS

nA
nA

V
V
V

mA
mA
mA

Ω
Ω
Ω

©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002

J108/J109/J110/MMBFJ108

Thermal Characteristics T

Symbol Parameter

P

D

R

θJC

R

θJA

* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06"

Total Device Dissipation
Derate above 25°C

Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 357 556 °C/W

=25°C unless otherwise noted

A

Max.

J108 - 1 10 *MMBFJ108

625

5.0

350

2.8

Units

mW

mW/°C

©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002

Typical Characteristics

J108/J109/J110/MMBFJ108

Common Drain-Source

100

V = 0 V

GS

80

60

40

20

D

I - DRAIN CURRENT (mA)

0

0 0.4 0.8 1.2 1.6 2

V - DRAIN-SOURCE VOLTAGE (V)

DS

- 4.0 V

- 5.0 V

- 2.0 V

- 1.0 V

TYP V = - 5.0 V

T = 25

A
GS(off)

- 3.0 V

캜캜캜캜

°°°°C

)

Ω

ΩΩ

Ω

100

(

DS

r - DRAIN "ON" RESISTANCE

Parameter Interactions

I @ V = 5.0V, V = 0 PULSED

DSS

r @ V = 100mV, V = 0

DS

50

V @ V = 5.0V, I = 3.0 nA

GS(off)

10

5

_

0.1 0.5 1 5 10

V - GATE CUTOFF VOLTAGE (V)

GS (OFF)

GS

DS

DS

DS

__

GS

D

r

DS

Figure 1. Common Drain-Source Figure 2. Parameter Interactions

Common Drain-Source

100

f = 0.1 - 1.0 MHz

C (V = 5.0V )

iss

DS

10

C (V = 0 )

rss

DS

rs

ts

C (C ) - CAPACITANCE (pF)

-20-16-12-8-40

V - GATE-SOURCE VOLTAGE (V)

GS

50

40

30

20

10

D

I - DRAIN CURRENT (mA)

Common Drain-Source

캜캜캜캜

T = 25

°°°°C

A

TYP V = - 0.7 V

GS(off)

V = 0 V

GS

- 0.1 V

- 0.2 V

0

012345

V - DRAIN-SOURCE VOLTAGE (V)

DS

1,000

I - DRAIN CURRENT (mA)

DSS

500

100

50

I

DSS

_

- 0.5 V

10

- 0.3 V

_

- 0.4 V

Figure 3. Common Drain-Source Figure 4. Common Dra in-Source

Normalized Drain Resistance

vs Bias Voltage

100

V @ 5.0V, 10

GS(off)

50

20

r =

DS

10

1 -

5

2

DS

1

r - NORMALIZED RESISTANCE

0 0.2 0.4 0.6 0.8 1

V /V - NORMALIZED GATE-SOURCE VOLTAGE (V)

GS

GS(off)

Figure 5. Normalized Drain Resistance vs

r

DS

V

GS

________

V

GS(off)

µµµµ

A

Noise Voltage vs Frequency

100

V = 10V

DG

√

√√

√

50

BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.21 @ f

10

5

I = 10 mA

n

e - NOISE VOLTAGE (nV / Hz)

1

0.01 0.03 0.1 0.5 1 2 10 100

Figure 6. Noise Voltage vs Frequency

≥≥≥≥

1.0 kHz

I = 1.0 mA

D

D

f - FREQUENCY (kHz)

Bias Voltage

©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002

J108/J109/J110/MMBFJ108

Typical Characteristics

Switching Turn-On Time vs

Gate-Source Cutoff Voltage

10

8

6

4

2

ON

ON

t - TURN-ON TIME (ns)

0

On Resistance vs Drain Current

ΩΩ

Ω)

(Ω

100

50

10

5

DS

r - DRAIN "ON" RESISTANCE

1

캜캜캜캜

T = 25

°°°°C

A

V = 1.5V

DD

V = - 12V

GS(off)

I = 30 mA

D

I = 10 mA

D

V - GATE-SOURCE CUTOFF VOLTAGE (V)

GS(off)

GS(off)

Figure 7. Swi tc h ing Turn-On Ti m e vs

Gate-Source Cutoff Voltage

V = - 3.0V

GS(off)

캜캜캜캜

125

°°°°C

캜캜캜캜

°°°°C

125

캜캜캜캜

°°°°C

25

캜캜캜캜

°°°°C

캜캜캜캜

25

°°°°C

1 10 100

I - DRAIN CURRENT (mA)

D

- 55

V = - 5.0V

GS(off)

(Continued)

V = 0

GS

Switching Turn-On Time

vs Drain Curr ent

50

40

30

20

10

OFF

t - TURN-OFF TIME (ns)

-10-8-6-4-20

0

0 5 10 15 20 25

캜캜캜캜

T = 25

°°°°C

A

V = 1.5V

DD

V = - 12V

GS(off)

I - DRAIN CURRENT (mA)

D

V = - 8.5V

GS(off)

V = - 5.5V

GS(off)

V = - 3.5V

GS(off)

Figure 8. Switching Turn-On Time vs Drain Current

Output Conductance

vs Drain Current

100

µ

µµ

µ

V

GS(off)

- 4.0V

10

- 2.0V

1

0.1 1 10

os

g - OUTPUT CONDUCTANCE ( mhos)

V = 5.0V

DG

10V

5.0V

15V

10V

15V

10V

20V

20V

- 1.0V

I - DRAIN CURRENT (mA)

D

20V

5.0V

15V

T = 25

A

f = 1.0 kHz

캜캜캜캜

°°°°C

Figure 9. On Resistance vs Drain Current Figure 10. Output Conductance vs Drain Current

Transconductance

vs Drain Current

100

T = 25

A

V = 10V

DG

f = 1.0 kHz

캜캜캜캜

°°°°C

T = - 55

A

T = 25

A

T = 125

A

캜캜캜캜

°°°°C

캜캜캜캜

°°°°C

캜캜캜캜

°°°°C

10

V = - 1.0V

GS(off)

V = - 3.0V

GS(off)

V = - 5.0V

1

fs

0.1 1 10

g - TRANSCONDUCTANCE (mmhos)

I - DRAIN CURRENT (mA)

D

GS(off)

700

600

500

SuperSOT-3

400

300

200

100

- POWER DISSIPATION(mW)

D

P

0

0 255075100125150

TEMPERATUR E (oC)

Figure 11. Transconductance vs Drain Current Figure 12. Power Dissipation vs Ambient Temperature

©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002

TO-92

Package Dimensions

4.58

0.46

±0.10

+0.25
–0.15

J108/J109/J110/MMBFJ108

TO-92

±0.20

4.58

±0.40

1.27TYP

[1.27

±0.20

3.86MAX

±0.10

1.02

+0.10

–0.05

0.38

14.47

1.27TYP

]

3.60

±0.20

[1.27

±0.20

]

0.38

+0.10
–0.05

(0.25)

(R2.29)

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002

J108/J109/J110/MMBFJ108

Package Dimensions

(Continued)

SuperSOT-3

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002

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2

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®

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CORPORATION.
As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

©2002 Fairchild Semiconductor Corporation Rev. I1

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.