Datasheet MMBF2202PT1 Datasheet (Motorola)

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

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Part of the GreenLine Portfolio of devices with energy–con-

serving traits.

These miniature surface mount MOSFET s utilize Motorola’ s High

Cell Density, HDTMOS process. Low r

DS(on)

assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, power management in portable and battery– powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

• Low r

DS(on)

Provides Higher Efficiency and Extends Battery Life

• Miniature SC–70/SOT–323 Surface Mount Package Saves

Board Space

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain–to–Source Voltage V

DSS

20 Vdc

Gate–to–Source Voltage — Continuous V

± 20 Vdc

Drain Current — Continuous @ TA = 25°C

Drain Current — Continuous @ TA = 70°C Drain Current — Pulsed Drain Current (tp ≤ 10 µs)

300 240 750

mAdc

Total Power Dissipation @ TA = 25°C

(1)

Derate above 25°C

150

1.2

mW/°C

Operating and Storage Temperature Range TJ, T

stg

– 55 to 150 °C

Thermal Resistance — Junction–to–Ambient R

θJA

833 °C/W

Maximum Lead Temperature for Soldering Purposes, for 10 seconds T

260 °C

DEVICE MARKING

(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.

ORDERING INFORMATION

Device Reel Size Tape Width Quantity

MMBF2202PT1 7″ 8 mm embossed tape 3000 MMBF2202PT3 13″ 8 mm embossed tape 10,000

GreenLine is a trademark of Motorola, Inc. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a registered trademark of the Berquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMBF2202PT1/D

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SEMICONDUCTOR TECHNICAL DATA



P–CHANNEL

ENHANCEMENT–MODE

TMOS MOSFET

DS(on)

= 2.2 OHM

Motorola Preferred Device



3 DRAIN

GATE

2 SOURCE

CASE 419–02, STYLE 7

SC–70/SOT–323

 Motorola, Inc. 1995



REV 1

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MMBF2202PT1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 µA)

(BR)DSS

20 — — Vdc

Zero Gate Voltage Drain Current

(VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)

DSS

— —

1.0 10

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I

GSS

— — ±100 nAdc

ON CHARACTERISTICS

(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

GS(th)

1.0 1.7 2.4 Vdc

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 200 mAdc) (VGS = 4.5 Vdc, ID = 50 mAdc)

DS(on)

— —

1.5

2.0

2.2

3.5

Ohms

Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) g

— 600 — mMhos

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 5.0 V) C

iss

— 50 — pF

Output Capacitance (VDS = 5.0 V) C

oss

— 45 —

Transfer Capacitance (VDG = 5.0 V) C

rss

— 20 —

SWITCHING CHARACTERISTICS

(2)

Turn–On Delay Time

d(on)

— 2.5 —

Rise Time

— 1.0 —

Turn–Off Delay Time

RL = 75 Ω, ID = 200 mAdc,

GEN

= –10 V, RG = 6.0 Ω)

d(off)

— 16 —

Fall Time

GEN

= –10 V, RG = 6.0 Ω)

— 8.0 —

Gate Charge (See Figure 5) (VDS = 16 V, VGS = 10 V,

ID = 200 mA)

— 2700 — pC

SOURCE–DRAIN DIODE CHARACTERISTICS

Continuous Current I

— — 0.3 A

Pulsed Current I

— — 0.75

Forward Voltage

(2)

— 1.5 — V

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature.

Figure 1. On Resistance versus Gate–Source Voltage

VGS, GATE–SOURCE VOLTAGE (VOLTS)

ID = 200 mA8

1 2 3 4 5 6 7 8 9 10

DS(on)

, ON RESISTANCE (OHMS)

Figure 2. On Resistance versus Temperature

4.0

–40

TEMPERATURE (°C)

VGS = 10 V ID = 200 mA

3.5

3.0

2.5

2.0

–20 0 20 40 60 80 100 120 140 160

DS(on)

, ON RESISTANCE (OHMS)

1.5

1.0

0.5

VGS = 4.5 V ID = 50 mA

(VDD = –15 Vdc,

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MMBF2202PT1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 3. On Resistance versus Drain Current

ID, DRAIN CURRENT (AMPS)

VGS = 10 V

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

DS(on)

, ON RESISTANCE (OHMS)

VGS = 4.5 V

Figure 4. Transfer Characteristics

1.0

VGS, GATE–SOURCE VOLTAGE (VOLTS)

0.9

0.8

0.7

0.6

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

, DRAIN CURRENT (AMPS)

0.5

0.4

0.3

Figure 5. Source–Drain Forward Voltage

VSD, SOURCE–DRAIN FORWARD VOLTAGE (VOLTS)

0.1

0.01

0.001 0 0.5 1.0 1.5 2.0 2.5

, SOURCE CURRENT (AMPS)

Figure 6. On Region Characteristics

0.8

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

VGS = 5 V

0.7

0.6

0.5

0.4

1 2 3 4 5 6 7 8 9 10

D(on)

, DRAIN CURRENT (AMPS)

0.3

0.2

0.1

VGS = 4.5 V

Figure 7. Capacitance Variation

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

45 40 35 30

2 4 6 8 10 12 14 16 18 20

C, CAPACITANCE (pF)

25 20 15

0.2

0.1

5.5 6.0

–55

150

VGS = 3.5 V

VGS = 4 V

VGS = 3 V

iss

oss

rss

VGS = 0 V f = 1 MHz

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MMBF2202PT1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING THE SC–70/SOT–323 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to i nsure proper solder connection

interface between the board and the package. With the correct p ad geometry, the p ackages will s elf align when subjected to a solder reflow process.

inches

0.035

0.9

0.075

0.7

1.9

0.028

0.65

0.025

0.65

0.025

SC–70/SOT–323

SC–70/SOT–323 POWER DISSIPATION

The power dissipation of the SC–70/SOT–323 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T

J(max)

, the maximum rated junction tempera-

ture of the die, R

θJA

, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using t he values p rovided o n the d ata s heet f or t he SC–70/SOT–323 package, PD can be calculated as follows:

The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 150 milliwatts.

The 833°C/W for the SC–70/SOT–323 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from t he SC–70/SOT–323 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected.

• Always preheat the device.

• The delta temperature between the preheat and soldering

should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the maximum

temperature gradient shall be 5°C or less.

• After soldering has been completed, the device should be

allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.

PD =

150°C – 25°C

833°C/W

J(max)

θJA

– T

= 150 milliwatts

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MMBF2202PT1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

CASE 419–02

SC–70/SOT–323

ISSUE F

1 2

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 C 0.035 0.049 0.90 1.25 D 0.012 0.016 0.30 0.40 G 0.047 0.055 1.20 1.40 H 0.000 0.004 0.00 0.10 J 0.004 0.010 0.10 0.25 K 0.017 REF 0.425 REF L 0.026 BSC 0.650 BSC N 0.028 REF 0.700 REF R 0.031 0.039 0.80 1.00 S 0.079 0.087 2.00 2.20 V 0.012 0.016 0.30 0.40

0.05 (0.002)

STYLE 7:

PIN 1. DRAIN

2. GATE

3. COLLECTOR

Page 6

MMBF2202PT1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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M/D

*M/D*

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MMBF2202PT1/D

*MMBF2202PT1/D*

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