Datasheet MCP1700 Datasheet

MCP1700

1

3

2

V

IN

GND V

OUT

MCP1700

1

2

3

V

IN

GND V

OUT

MCP1700

3-Pin SOT-23 3-Pin SOT-89

321

GND V

INVOUT

MCP1700

3-Pin TO-92

V

IN

Low Quiescent Current LDO

Features

• 1.6 µA Typical Quiescent Current

• Input Operating Voltage Range: 2.3V to 6.0V

• Output Voltage Range: 1.2V to 5.0V

• 250 mA Output Current for output voltages ≥ 2.5V

• 200 mA Output Current for output voltages < 2.5V

• Low Dropout (LDO) voltage

- 178 mV typical @ 250 mA for V

• 0.4% Typical Output Voltage Tolerance

• Standard Output Voltage Options:

- 1.2V, 1.8V, 2.5V, 3.0V, 3.3V, 5.0V

• Stable with 1.0 µF Ceramic Output capacitor

• Short Circuit Protection

• Overtemperature Protection

OUT

= 2.8V

Applications

• Battery-powered Devices

• Battery-powered Alarm Circuits

• Smoke Detectors

2

Detectors

•CO

• Pagers and Cellular Phones

• Smart Battery Packs

• Low Quiescent Current Voltage Reference

•PDAs

• Digital Cameras

• Microcontroller Power

General Description

The MCP1700 is a family of CMOS low dropout (LDO)
voltage regulators that can deliver up to 250 mA of
current while consuming only 1.6 µA of quiescent
current (typical). The input operating range is specified
from 2.3V to 6.0V, making it an ideal choice for two and
three primary cell battery-powered applications, as well
as single cell Li-Ion-powered applications.

The MCP1700 is capable of delivering 250 mA with
only 178 mV of input to output voltage differential

= 2.8V). The output voltage tolerance of the

(V

OUT

MCP1700 is typically ±0.4% at +25°C and ±3%
maximum over the operating junction temperature
range of -40°C to +125°C.

Output voltages available for the MCP1700 range from

1.2V to 5.0V. The LDO output is stable when using only
1 µF output capacitance. Ceramic, tantalum or
aluminum electrolytic capacitors can all be used for
input and output. Overcurrent limit and overtemperature
shutdown provide a robust solution for any application.

Package options include the SOT-23, SOT-89 and
TO-92.

Package Types

Related Literature

• AN765, “Using Microchip’s Micropower LDOs”,
DS00765, Microchip Technology Inc., 2002

• AN766, “Pin-Compatible CMOS Upgrades to
BiPolar LDOs”, DS00766,
Microchip Technology Inc., 2002

• AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”,
DS00792, Microchip Technology Inc., 2001

© 2007 Microchip Technology Inc. DS21826B-page 1

MCP1700

+

-

MCP1700

V

IN

V

OUT

GND

+V

IN

Error Amplifier

Voltage
Reference

Over Current
Over Temperature

MCP1700

GND

V

OUT

V

IN

C

IN

1 µF Ceramic

C

OUT

1 µF Ceramic

V

OUT

V

IN

(2.3V to 3.2V)

1.8V

I

OUT

150 mA

Functional Block Diagrams

Typical Application Circuits

DS21826B-page 2 © 2007 Microchip Technology Inc.

MCP1700

1.0 ELECTRICAL

CHARACTERISTICS

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the

Absolute Maximum Ratings †

V

............................................................................................+6.5V

DD

All inputs and outputs w.r.t. .............(V

Peak Output Current ....................................Internally Limited

-0.3V) to (VIN+0.3V)

SS

operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.

Storage temperature .....................................-65°C to +150°C

Maximum Junction Temperature................................... 150°C

Operating Junction Temperature...................-40°C to +125°C

ESD protection on all pins (HBM;MM)............... ≥ 4kV; ≥ 400V

DC CHARACTERISTICS

Electrical Characteristics: Unless otherwise specified, all limits are established for VIN=VR+1, I

C

=1µF (X7R), CIN=1µF(X7R), TA= +25°C.

OUT

Boldface type applies for junction temperatures, T

(Note 6) of -40°C to +125°C.

J

Parameters Sym Min Typ Max Units Conditions

Input / Output Characteristics

Input Operating Voltage V
Input Quiescent Current I
Maximum Output Current I

Output Short Circuit Current I

OUT_mA

OUT_SC

IN

q

2.3 — 6.0 V Note 1
—1.6 4 µA IL=0mA, VIN=VR +1V

250
200

—
—

—
—

mA For VR≥ 2.5V

For V

— 408 — mA VIN=VR+V, V

Current (peak current) measured
10 ms after short is applied.

Output Voltage Regulation V

Temperature Coefficient TCV

V

OUT

Line Regulation ΔV

(V

OUT

Load Regulation ΔV

Dropout Voltage
V

> 2.5V

R

Dropout Voltage
V

< 2.5V

R

OUT/VOUT

V

IN-VOUT

V

IN-VOUT

Output Rise Time T

Output Noise e

Note 1: The minimum V

2: V

is the nominal regulator output voltage. For example: VR= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The

R

input voltage (V

3: TCV

OUT

= (V

temperature range. V

must meet two conditions: VIN≥ 2.3V and VIN ≥ (VR + 3.0%) +V

IN

+ 1.0V); I

IN=VR

OUT-HIGH-VOUT-LOW

OUT-LOW

OUT

OUT

OUT

XΔVIN)

R

N

VR-3.0%

V

-2.0%

R

±0.4%VR+3.0%

V

R

V

+2.0%

R

V Note 2

— 50 — ppm/°C Note 3

/

-1.0 ±0.75 +1.0 %/V (V

R

-1.5 ±1.0 +1.5 %IL= 0.1 mA to 250 mA for VR≥ 2.5V

I

= 0.1 mA to 200 mA for VR< 2.5V

L

Note 4

— 178 350 mV IL= 250 mA, (Note 1, Note 5)

— 150 350 mV IL= 200 mA, (Note 1, Note 5)

— 500 — µs 10% VR to 90% VR VIN= 0V to 6V,

R

L

—3—µV/(Hz)

= 100 µA.

OUT

) *106 / (VR* ΔTemperature), V

OUT-HIGH

1/2

IL= 100 mA, f = 1 kHz, C

DROPOUT

= highest voltage measured over the

= lowest voltage measured over the temperature range.

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCV

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

value with a V

+ 1V differential applied.

R

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., T
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

, TJ, θJA). Exceeding the maximum allowable power

A

junction temperatures above 150°C can impact the device reliability.

7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.

= 100 µA,

LOAD

< 2.5V

R

OUT

+1)V ≤ VIN ≤ 6V

=50Ω resistive

.

.

OUT

=GND,

OUT

=1µF

© 2007 Microchip Technology Inc. DS21826B-page 3

MCP1700

DC CHARACTERISTICS (CONTINUED)

Electrical Characteristics: Unless otherwise specified, all limits are established for VIN=VR+1, I

C

=1µF (X7R), CIN=1µF(X7R), TA= +25°C.

OUT

Boldface type applies for junction temperatures, T

(Note 6) of -40°C to +125°C.

J

Parameters Sym Min Typ Max Units Conditions

Power Supply Ripple
Rejection Ratio

Thermal Shutdown Protection T

Note 1: The minimum V

2: V

is the nominal regulator output voltage. For example: VR= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The

R

input voltage (V

3: TCV

temperature range. V

OUT

= (V

OUT-HIGH-VOUT-LOW

PSRR — 44 — dB f = 100 Hz, C

SD

must meet two conditions: VIN≥ 2.3V and VIN ≥ (VR + 3.0%) +V

IN

+ 1.0V); I

IN=VR

= lowest voltage measured over the temperature range.

OUT-LOW

— 140 — °C VIN=VR+1, IL= 100 µA

= 100 µA.

OUT

) *106 / (VR* ΔTemperature), V

OUT-HIGH

= highest voltage measured over the

V

INAC

V

R

DROPOUT

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCV

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

value with a V

+ 1V differential applied.

R

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., T

, TJ, θJA). Exceeding the maximum allowable power

A

dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.

7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.

= 100 µA,

LOAD

=1µF, IL=50mA,

OUT

=100mVpk-pk, CIN=0µF,

=1.2V

.

.

OUT

TEMPERATURE SPECIFICATIONS

Electrical Characteristics: Unless otherwise specified, all limits are established for V

C

= 1 µF (X7R), CIN=1µF (X7R), TA= +25°C.

OUT

Boldface type applies for junction temperatures, T

(Note 1) of -40°C to +125°C.

J

Parameters Sym Min Typ Max Units Conditions

Temperature Ranges

Specified Temperature Range T
Operating Temperature Range T
Storage Temperature Range T

A

A

A

-40 +125 °C

-40 +125 °C

-65 +150 °C

Thermal Package Resistance

Thermal Resistance, SOT-23

θ

JA

—336—°C/W

— 230 — °C/W Typical FR4 4-layer Application

Thermal Resistance, SOT-89 θ
Thermal Resistance, TO-92

JA

θ

JA

— 52 — °C/W Typical, 1 square inch of copper

— 131.9 — °C/W

Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., T
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

, TJ, θJA). Exceeding the maximum allowable power

A

junction temperatures above 150°C can impact the device reliability.

IN=VR

+1, I

LOAD

= 100 µA,

Minimum Trace Width Single Layer
Board

EIA/JEDEC JESD51-751-7
4-Layer Board

DS21826B-page 4 © 2007 Microchip Technology Inc.

MCP1700

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

Input Voltage (V)

Quiescent Current (µA)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 1.2V
I

OUT

= 0 µA

0

5

10

15

20

25

30

35

40

45

50

0 25 50 75 100 125 150 175 200 225 250

Load Current (mA)

Ground Current (µA)

V

R

V

TJ = - 40°C

TJ = +25°C

TJ = +125°C

1.25

1.50

1.75

2.00

2.25

2.50

-40 -25 -10 5 20 35 50 65 80 95 110 125

Junction Temperature (°C)

Quiscent Current (µA)

VR = 5.0V

VR = 2.8V

VR = 1.2V

VIN = VR + 1V
I

OUT

= 0 µA

1.190

1.192

1.194

1.196

1.198

1.200

1.202

1.204

1.206

2 2.5 3 3.5 4 4.5 5 5.5 6

Input Voltage (V)

Output Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 1.2V
I

OUT

= 0.1 mA

1.77

1.775

1.78

1.785

1.79

1.795

1.8

2 2.5 3 3.5 4 4.5 5 5.5 6

Input Voltage (V)

Output Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 1.8V
I

OUT

= 0.1 mA

2.778

2.780

2.782

2.784

2.786

2.788

2.790

2.792

2.794

2.796

2.798

2.800

3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6

Input Voltage (V)

Output Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 2.8V
I

OUT

= 0.1 mA

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated: VR= 1.8V, C

= 1 µF Ceramic (X7R), CIN= 1 µF Ceramic (X7R), IL= 100 µA,

OUT

TA= +25°C, VIN=VR+V.

Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction
temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.

FIGURE 2-1: Input Quiescent Current vs. Input Voltage.

= 2.8

FIGURE 2-4: Output Voltage vs. Input
Voltage (V

=1.2V).

R

FIGURE 2-2: Ground Current vs. Load Current.

FIGURE 2-3: Quiescent Current vs. Junction Temperature.

© 2007 Microchip Technology Inc. DS21826B-page 5

FIGURE 2-5: Output Voltage vs. Input
Voltage (V

=1.8V).

R

FIGURE 2-6: Output Voltage vs. Input
Voltage (V

=2.8V).

R

MCP1700

4.955

4.960

4.965

4.970

4.975

4.980

4.985

4.990

4.995

5.000

5 5.2 5.4 5.6 5.8 6

Input Voltage (V)

Output Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 5.0V
I

OUT

= 0.1 mA

1.15

1.16

1.17

1.18

1.19

1.20

1.21

0 25 50 75 100 125 150 175 200

Load Curent (mA)

Output Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 1.2V
V

IN

= VR + 1V

1.778

1.780

1.782

1.784

1.786

1.788

1.790

1.792

0 25 50 75 100 125 150 175 200

Load Current (mA)

Output Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 1.8V
V

IN

= VR + 1V

2.778

2.780

2.782

2.784

2.786

2.788

2.790

2.792

2.794

2.796

2.798

0 50 100 150 200 250

Load Current (mA)

Output Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 2.8V
V

IN

= VR + 1V

4.955

4.960

4.965

4.970

4.975

4.980

4.985

4.990

4.995

5.000

0 50 100 150 200 250

Load Current (mA)

Output Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 5.0V
V

IN

= VR + 1V

0

0.05

0.1

0.15

0.2

0.25

0 25 50 75 100 125 150 175 2 00 225 25 0

Load Current (mA)

Dropout Votage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

V

R

Note: Unless otherwise indicated: VR= 1.8V, C

OUT

TA= +25°C, VIN=VR+1V.

FIGURE 2-7: Output Voltage vs. Input
Voltage (V

=5.0V).

R

= 1 µF Ceramic (X7R), CIN= 1 µF Ceramic (X7R), IL= 100 µA,

FIGURE 2-10: Output Voltage vs. Load
Current (V

=2.8V).

R

FIGURE 2-8: Output Voltage vs. Load
Current (V

=1.2V).

R

FIGURE 2-9: Output Voltage vs. Load
Current (V

DS21826B-page 6 © 2007 Microchip Technology Inc.

R

=1.8V).

FIGURE 2-11: Output Voltage vs. Load
Current (V

=5.0V).

R

= 2.8V

FIGURE 2-12: Dropout Voltage vs. Load
Current (V

=2.8V).

R

MCP1700

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0 25 50 75 100 125 150 175 200 225 250

Load Current (mA)

Dropout Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

V

R

0.01

0.1

1

10

0.01 0.1 1 10 100 1000

Frequency (KHz)

Noise (µV/

√

Hz)

VIN = 2.5V
V

R

= 1.2V

I

OUT

= 50ma

VIN = 2.8V
V

R

= 1.8V

I

OUT

= 50ma

VIN = 3.8V
V

R

= 2.8V

I

OUT

= 50ma

Note: Unless otherwise indicated: VR= 1.8V, C

OUT

TA = +25°C, VIN=VR+1V.

= 5.0V

FIGURE 2-13: Dropout Voltage vs. Load
Current (V

=5.0V).

R

= 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL= 100 µA,

FIGURE 2-16: Noise vs. Frequency.

FIGURE 2-14: Power Supply Ripple

Rejection vs. Frequency (V

FIGURE 2-15: Power Supply Ripple
Rejection vs. Frequency (V

© 2007 Microchip Technology Inc. DS21826B-page 7

=1.2V).

R

=2.8V).

R

FIGURE 2-17: Dynamic Load Step
(V

=1.2V).

R

FIGURE 2-18: Dynamic Load Step
(V

=1.8V).

R

MCP1700

Note: Unless otherwise indicated: VR= 1.8V, C

TA= +25°C, VIN=VR+1V.

FIGURE 2-19: Dynamic Load Step
(V

=2.8V).

R

= 1 µF Ceramic (X7R), CIN= µF Ceramic (X7R), IL= 100 µA,

OUT

FIGURE 2-22: Dynamic Load Step
(V

=5.0V).

R

FIGURE 2-20: Dynamic Load Step
(V

=1.8V).

R

FIGURE 2-21: Dynamic Load Step
(V

=2.8V).

R

FIGURE 2-23: Dynamic Line Step
(V

=2.8V).

R

FIGURE 2-24: Startup From VIN
(V

=1.2V).

R

DS21826B-page 8 © 2007 Microchip Technology Inc.