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MCP16311/2
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Datasheet MCP16311/2 Datasheet

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MCP16311/2
EN
V
CC
V
IN
BOOST
SW
1
2
3 4
8
7
6 5
P
GND
V
FB
EP
9
A
GND
5
1 2 3
A
GND
SW
EN
V
IN
V
FB
MCP16311/2
MSOP
8
7 6
BOOST
4
P
GND
VCC
MCP16311/2
2x3 TDFN*
* Includes Exposed Thermal Pad (EP); see Ta b l e 3 -1 .
30V Input, 1A Output, High-Efficiency,
Integrated Synchronous Switch Step-Down Regulator

Features:

• Up to 95% Efficiency
• Input Voltage Range: 4.4V to 30V
• 1A Output Current Capability
• Output Voltage Range: 2.0V to 24V
• Integrated N-Channel Low and High-Side Switches:
-170m, Low Side
-300m, High Side
• Stable Reference Voltage: 0.8V
• Automatic Pulse Frequency Modulation/Pulse­Width Modulation (PFM/PWM) Operation
(MCP16311):
- PFM Operation Disabled (MCP16312)
- PWM Operation: 500 kHz
• Low Device Shutdown Current: 3 µA typical
• Low Device Quiescent Current:
- 44 µA (non-switching, PFM Mode)
• Internal Compensation
• Internal Soft-Start: 300 µs (EN low to high)
• Peak Current Mode Control
• Cycle-by-Cycle Peak Current Limit
• Undervoltage Lockout (UVLO):
- 4.1V typical to start
- 3.6V typical to stop
• Overtemperature Protection
• Thermal Shutdown:
- +150°C
- +25°C Hysteresis

Applications:

General Description:

The MCP16311/2 is a compact, high-efficiency, fixed frequency, synchronous step-down DC-DC converter in a 8-pin MSOP, or 2 x 3 TDFN package that operates from input voltage sources up to 30V. Integrated features include a high-side and a low-side switch, fixed frequency Peak Current Mode Control, internal compensation, peak-current limit and overtemperature protection. The MCP16311/2 provides all the active functions for local DC-DC conversion, with fast transient response and accurate regulation.
High-converter efficiency is achieved by integrating the current-limited, low-resistance, high-speed low­side and high-side switches, and associated drive circuitry. The MCP16311 is capable of running in PWM/PFM mode. It switches in PFM mode for light load conditions and for large buck conversion ratios. This results in a higher efficiency over all load ranges. The MCP16312 is running in PWM mode-only, and is recommended for noise-sensitive applications.
The MCP16311/2 can supply up to 1A of continuous current while regulating the output voltage from 2V to 12V. An integrated, high-performance peak current mode architecture keeps the output voltage tightly regulated, even during input voltage steps and output current transient conditions, that are common in power systems.
The EN input is used to turn the device on and off. While off, only a few micro amps of current are consumed from the input.
Output voltage is set with an external resistor divider. The MCP16311/2 is offered in a small MSOP-8 and 2 x 3 TDFN surface mount packages.
•PIC®/dsPIC® Microcontroller Bias Supply
• 24V Industrial Input DC-DC Conversion
• General Purpose DC-DC Conversion
• Local Point of Load Regulation
• Automotive Battery Regulation
• Set-Top Boxes
• Cable Modems
• Wall Transformer Regulation
• Laptop Computers
• Networking Systems
• AC-DC Digital Control Bias
• Distributed Power Supplies
2013 Microchip Technology Inc. DS20005255A-page 1

Package Type

MCP16311/2
0
10
20
30
40
50
60
70
80
90
100
1 10 100 1000
Efficiency (%)
PWM ONLY PWM/PFM
V
IN
= 12V
OUT
= 5V
V
OUT
= 3.3V
V
V
IN
GND
V
FB
SW
V
IN
4.5V to 30V
V
OUT
3.3V @ 1A
C
OUT
2x10µF
C
IN
2x10µF
L
1
15 µH
BOOST
31.2 k
10 k
EN
C
BOOST
100 nF
V
CC
C
VCC
1µF
V
IN
GND
V
FB
SW
Vin
6V to 30V
V
OUT
5V, @ 1A
C
OUT
2x10µF
C
IN
2x10µF
L
1
22 µH
BOOST
52.3 k
10 k
EN
C
BOOST
100 nF
V
CC
C
VCC
1µF

Typical Applications

I
(mA)
OUT
DS20005255A-page 2 2013 Microchip Technology Inc.
MCP16311/2
1.0 ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those
Absolute Maximum Ratings †
V
SW ............................................................... -0.5V to 32V
IN,
BOOST – GND ................................................... -0.5V to 38V
BOOST – SW Voltage........................................-0.5V to 6.0V
Voltage ........................................................-0.5V to 6.0V
V
FB
EN Voltage ............................................. -0.5V to (V
Output Short Circuit Current .................................Continuous
Power Dissipation .......................................Internally Limited
Storage Temperature ....................................-65°C to +150°C
Ambient Temperature with Power Applied .... -40°C to +125°C
Operating Junction Temperature...................-40°C to +150°C
ESD Protection on All Pins:
HBM.....................................................................1 kV
MM ......................................................................200V
+0.3V)
IN
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability.

DC CHARACTERISTICS

Electrica l Characteristics: Unless otherwise indicated, T
V
=5.0V, I
OUT
Boldface specifications apply over the T
= 100 mA, L = 22 µH, C
OUT
OUT=CIN
range of -40°C to +125°C.
A
Parameters Sym. Min. Typ. Max. Units Conditions
V
Supply Voltage
IN
Input Voltage V
Quiescent Current I
Quiescent Current -
I
Q_PFM
IN
Q
4.4 — 30 V Note 1 —44 60 µA Non-switching,
—85 —µASwitching,
PFM Mode
Quiescent Current -
I
Q_PWM
—3.8 8 mA Switching,
PWM Mode
Quiescent Current -
I
Q_SHDN
—3 9 µA V
Shutdown
V
Undervoltage Lockout
IN
Undervoltage Lockout Start UVLO
Undervoltage Lockout Stop UVLO
Undervoltage Lockout
UVLO
STRT
STOP
HYS
—4.1 4.4 VV
3.18 3.6 — V V
0.2 0.5 1 V
Hysteresis
Output Characteristics
Feedback Voltage V
Output Voltage
V
FB
OUT
0.784 0.800 0.816 VI
2.0 — 24 V Note 2, Note 3
Adjust Range
Feedback Voltage
V
)/VIN-0.15 0.01 0.15 %/V VIN= 7V to 30V,
FB/VFB
Line Regulation
Feedback Voltage
V
/ VFB —0.25 — %I
FB
Load Regulation
Note 1: The input voltage should be greater than the output voltage plus headroom voltage; higher load currents
increase the input voltage necessary for regulation. See characterization graphs for typical input to output operating voltage range.
2: For V
IN<VOUT
, V
will not remain in regulation; for output voltages above 12V, the maximum current
OUT
will be limited to under 1A.
3: Determined by characterization, not production tested. 4: This is ensured by design.
=+25°C, VIN=VEN=7V, V
A
BOOST-VSW
= 2 x 10 µF X7R Ceramic Capacitors.
=5.0V,
=0.9V
V
FB
=0 (MCP16311)
I
OUT
I
=0 (MCP16312)
OUT
=EN=0V
OUT
Rising
IN
Falling
IN
=5mA
OUT
=50mA
I
OUT
= 5 mA to 1A,
OUT
MCP16312
2013 Microchip Technology Inc. DS20005255A-page 3
MCP16311/2
DC CHARACTERISTICS (CONTINUED)
Electrica l Characteristics: Unless otherwise indicated, T
V
=5.0V, I
OUT
Boldface specifications apply over the T
= 100 mA, L = 22 µH, C
OUT
OUT=CIN
range of -40°C to +125°C.
A
Parameters Sym. Min. Typ. Max. Units Conditions
Feedback Input
I
FB
—10 250 nA
Bias Current
Output Current I
OUT
1— —ANotes 1 to 3, Figure 2-7
Switching Characteristics
Switching Frequency f
Maximum Duty Cycle DC
Minimum Duty Cycle DC
Buck NMOS Switch
R
DS(ONB)
SW
MAX
MIN
425 500 575 kHz
85 94 — % No te 3 —2 —%Note 4 —0.3 — V
On Resistance
Buck NMOS Switch
I
(MAX)
—1.8 — AV
Current Limit
Synchronous NMOS Switch
R
DS(ONS)
—0.17 — Note 3
On Resistance
EN Input Characteristics
EN Input Logic High V
EN Input Logic Low V
EN Input Leakage Current I
ENLK
Soft-Start Time t
IH
IL
SS
1.85 ——V —— 0.4 V —0.1 1 µA V
— 300 — µs EN Low to High,
Thermal Ch aracteristics
Thermal Shutdown
T
SD
—150 — °CNote 3
Die Temperature
Die Temperature Hysteresis T
SDHYS
—25 —°CNote 3
Note 1: The input voltage should be greater than the output voltage plus headroom voltage; higher load currents
increase the input voltage necessary for regulation. See characterization graphs for typical input to output operating voltage range.
2: For V
IN<VOUT
, V
will not remain in regulation; for output voltages above 12V, the maximum current
OUT
will be limited to under 1A.
3: Determined by characterization, not production tested. 4: This is ensured by design.
=+25°C, VIN=VEN=7V, V
A
BOOST-VSW
= 2 x 10 µF X7R Ceramic Capacitors.
=5.0V,
BOOST–VSW
Note 3
BOOST–VSW
Note 3
=5V
EN
90% of V
OUT
= 5V,
= 5V,

TEMPERATURE CHARACTERISTICS

Electrical Specifications:
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Junction Temperature Range T
Storage Temperature Range T
Maximum Junction Temperature T
J
A
J
Package Thermal Resistances
Thermal Resistance, 8L-MSOP Thermal Resistance, 8L-2x3 TDFN
DS20005255A-page 4 2013 Microchip Technology Inc.
JA
JA
-40 — +125 °C Steady State
-65 — +150 °C
— — +150 °C Transient
— 211 — °C/W EIA/JESD51-3 Standard
— 52.5 — °C/W EIA/JESD51-3 Standard
MCP16311/2
0
10
20
30
40
50
60
70
80
90
100
1 10 100 1000
Efficiency (%)
V
= 6V
VIN= 12V
V
IN
= 24V
VIN= 30V
PWM/PFM PWM ONLY
0
10
20
30
40
50
60
70
80
90
100
1 10 100
1000
Efficiency (%)
VIN= 12V
VIN= 24V
VIN= 30V
PWM/PFM PWM ONLY
0
10
20
30
40
50
60
70
80
90
100
1 10 100 1000
Efficiency (%)
V
= 15V
V
IN
= 24V
VIN= 30V
PWM/PFM PWM ONLY
0
20
40
60
80
100
5 1015202530
Efficiency (%)
I
OUT
= 10 mA
I
OUT
= 200 mA
I
OUT
= 800 mA
0
20
40
60
80
100
6 101418222630
Efficiency (%)
I
OUT
= 10 mA
I
OUT
= 200 mA
I
OUT
= 800 mA
PWM/PFM option
0
20
40
60
80
100
12 14 16 18 20 22 24 26 28 30
Efficiency (%)
I
OUT
= 10 mA
I
OUT
= 200 mA
I
OUT
= 800 mA
PWM/PFM option

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, V
=+25°C, 8L-MSOP package.
T
A
IN
I
(mA)
OUT
FIGURE 2-1: 3.3V V I
.
OUT
Efficiency vs.
OUT
=EN=7V, C
IN
OUT=CIN
=2x10µF, L =22µH, V
OUT
VIN(V)
FIGURE 2-4: 3.3V V
=5.0V, I
OUT
LOAD
PWM/PFM option
Efficiency vs.VIN.
=100mA,
FIGURE 2-2: 5.0V V I
.
OUT
IN
FIGURE 2-3: 12.0V V I
.
OUT
2013 Microchip Technology Inc. DS20005255A-page 5
I
OUT
I
OUT
(mA)
Efficiency vs.
OUT
(mA)
Efficiency vs.
OUT
VIN(V)
FIGURE 2-5: 5.0V V
VIN(V)
FIGURE 2-6: 12.0V V V
.
IN
Efficiency vs.VIN.
OUT
Efficiency vs.
OUT
MCP16311/2
0
200
400
600
800
1000
1200
1400
1600
0 5 10 15 20 25 30
I
OUT
(mA)
V
OUT
= 3.3V
V
OUT
= 5V
V
OUT
= 12V
0.79
0.792
0.794
0.796
0.798
0.8
-40 -25 -10 5 20 35 50 65 80 95 110 125
Feedback Voltage (V)
VIN=7V V
OUT
= 3.3V
I
OUT
= 100 mA
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
-40 -25 -10 5 20 35 50 65 80 95 110 125
Switch R
DSON
(
:
)
Low Side
High Side
VIN= 12V V
OUT
= 5V
I
OUT
= 500 mA
3
3.4
3.8
4.2
4.6
5
-40 -25 -10 5 20 35 50 65 80 95 110
125
Input Voltage (V)
UVLO START
UVLO STOP
0.9
1
1.1
1.2
1.3
-40 -25 -10 5 20 35 50 65 80 95 110 125
HIGH
LOW
VIN= 12V V
OUT
= 3.3V
I
OUT
= 200 mA
Note: Unless otherwise indicated, V
=+25°C, 8L-MSOP package.
T
A
VIN(V)
FIGURE 2-7: Max I
OUT
vs.V
=EN=7V, C
IN
IN.
OUT=CIN
=2x10µF, L =22µH, V
Temperature (°C)
OUT
=5.0V, I
LOAD
=100mA,

FIGURE 2-10: Undervoltage Lockout vs. Temperature.

1.4
FIGURE 2-8: VFB vs. Temperature; V
=3.3V.
OUT
Temperature (°C)
FIGURE 2-9: Switch R Temperature.
DS20005255A-page 6 2013 Microchip Technology Inc.
Temperature (°C)
DSON
vs.
Enable Voltage (V)
Temperature (°C)

FIGURE 2-11: Enable Threshold Voltage vs. Temperature.

5.03
VIN= 12V
= 5V
V
OUT
5.02
5.01
4.99
Output Voltage (V)
4.98
4.97
FIGURE 2-12: V
= 100 mA
I
OUT
5
-40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (°C)
vs. Temperature.
OUT
MCP16311/2
0
20
40
60
-40 -25 -10 5 20 35 50 65 80 95 110 125
Quiescent Current (μA)
Non-Swithcing
Shutdown
VIN= 12V V
OUT
= 5V
0
10
20
30
40
50
5 1015202530
Quiescent Current (μA)
Non-Switching
Shutdown
V
OUT
= 3.3V
40
60
80
100
120
5 1015202530
No Load Input Current (μA)
V
OUT
= 3.3V
1
1.2
1.4
1.6
1.8
5 1015202530
Input Current (mA)
V
OUT
= 3.3V
Note: Unless otherwise indicated, V
=+25°C, 8L-MSOP package.
T
A
Temperature (°C)
=EN=7V, C
IN

FIGURE 2-13: Input Quiescent Current vs. Temperature.

Input Voltage (°C)
OUT=CIN
=2x10µF, L =22µH, V
OUT
VIN(V)
=5.0V, I
LOAD
=100mA,
FIGURE 2-16: PWM No Load Input Current vs.V
, MCP16312.
IN
150
125
100
75
50
Output Current (mA)
25
0
5 1015202530
V
= 3.3V
OUT
V
= 5V
OUT
V
= 12V
OUT
VIN(V)

FIGURE 2-14: Input Quiescent Current vs. Input Voltage.

Input Voltage (V)

FIGURE 2-15: PFM No Load Input Current vs. Input Voltage, MCP16311.

2013 Microchip Technology Inc. DS20005255A-page 7
FIGURE 2-17: PF M /PW M I vs. V
.
IN
50
40
30
20
Output Current (mA)
10
0
5 1015202530
VIN(V)
OUT
V
= 3.3V
OUT
V
= 5V
OUT
FIGURE 2-18: Skipping/PWM I Threshold vs. Input Voltage.
Threshold
V
= 12V
OUT
OUT
MCP16311/2
3.5
4
4.5
0 200 400 600 800 1000
V
IN
(V)
To Start
To Stop
V
OUT
= 3.3V
450
475
500
525
-40 -25 -10 5 20 35 50 65 80 95 110 125
VIN= 12V V
OUT
= 3.3V
I
OUT
= 200 mA
V
OUT
2 V/div
EN 2 V/div
80 µs/div
V
OUT
2 V/div
V
IN
5 V/div
200 µs/div
V
OUT
2 V/div
I
OUT
2A/div
10 µs/div
I
L
500 mA/div
V
OUT
100 mV/div
I
OUT
500 mA/div
200 µs/div
AC Coupled
Load Step from 100 mA to 800 mA
Note: Unless otherwise indicated, V
=+25°C, 8L-MSOP package.
T
A
Output Current (mA)
=EN=7V, C
IN

FIGURE 2-19: Typical Minimum Input Voltage vs. Output Current.

OUT=CIN
=2x10µF, L =22µH, V
OUT
=5.0V, I
LOAD

FIGURE 2-22: Startup From VIN.

=100mA,
Switching Frequency (kHz)

FIGURE 2-20: Switching Frequency vs. Temperature.

FIGURE 2-21: Startup From Enable.

DS20005255A-page 8 2013 Microchip Technology Inc.
Temperature (°C)

FIGURE 2-23: Short-Circuit Response.

FIGURE 2-24: Load Transient Response.

MCP16311/2
V
OUT
50 mV/div
V
IN
5 V/div
400 µs/div
AC Coupled
V
IN
Step from 7V to 12V
V
OUT
100 mV/div
I
L
200 mA/div
20 µs/div
VIN = 24V
SW 10 V/div
I
OUT
= 25 mA
AC Coupled
V
OUT
10 mV/div
I
L
100 mA/div
1µs/div
V
IN
= 24V
SW 10 V/div
I
OUT
= 15 mA
AC Coupled
V
OUT
50 mV/div
I
L
200 mA/div
2µs/div
V
IN
= 12V
SW 10 V/div
V
OUT
= 5V
I
OUT
= 800 mA
AC Coupled
V
OUT
100 mV/div
Load Current
50 mA/div
400 µs/div
V
IN
= 12V
SW
5 V/div
V
OUT
= 5V
AC Coupled
Note: Unless otherwise indicated, V
=+25°C, 8L-MSOP package.
T
A
=EN=7V, C
IN

FIGURE 2-25: Line Transient Response.

OUT=CIN
=2x10µF, L =22µH, V
OUT
=5.0V, I
LOAD
=100mA,

FIGURE 2-28: Heavy Load Switching Waveforms.

FIGURE 2-26: PFM Light Load Switching Waveforms.

FIGURE 2-27: PW M Lig ht Load Swi tc hin g Waveforms.

2013 Microchip Technology Inc. DS20005255A-page 9

FIGURE 2-29: PFM to PWM Transition; Load Step from 5 mA to 100 mA.

MCP16311/2
NOTES:
DS20005255A-page 10 2013 Microchip Technology Inc.
MCP16311/2

3.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Ta bl e 3 -1 .

TABLE 3-1: PIN FUNCTION TABLE

MCP16311/2
2x3 TDFN
11VFBOutput Voltage Feedback pin. Connect V
22V
3 3 EN Enable pin. Logic high enables the operation. Do not allow this pin to
44V
55P
6 6 SW Output Switch Node pin, connects to the inductor and the bootstrap
7 7 BOOST
88A
9 — EP Exposed Thermal Pad
MCP16311/2
MSOP
Symbol Description
divider to set the output voltage.
CC
IN
GND
GND
Internal Regulator Output pin. Bypass Capacitor is required on this pin to provide high peak current for gate drive.
float.
Input Supply Voltage pin for power and internal biasing.
Power Ground pin
capacitor.
Boost Voltage pin that supplies the driver used to control the high­side NMOS switch. A bootstrap capacitor is connected between the BOOST and SW pins. Signal Ground pin
to an external resistor
FB

3.1 Feedback Voltage Pin (VFB)

The VFB pin is used to provide output voltage regulation by using a resistor divider. The V
0.800V typical with the output voltage in regulation.
voltage will be
FB

3.2 Internal Bias Pin (VCC)

The VCC internal bias is derived from the input voltage
. VCC is set to 5.0V typical. The VCC is used to pro-
V
IN
vide a stable low bias voltage for the upper and lower gate drive circuits. This output should be decoupled to
with a 1 µF capacitor, X7R. This capacitor should
A
GND
be connected as close as possible to the V A
pin.
GND
CC
and

3.3 Enable Pin (EN)

The EN pin is a logic-level input used to enable or disable the device and lower the quiescent current while disabled. A logic high (> 1.3V) will enable the reg­ulator output. A logic low (< 1V) will ensure that the reg­ulator is disabled.
3.4 Power Supply Input Voltage Pin (V
)
IN
Connect the input voltage source to VIN. The input source should be decoupled to GND with a
4.7 µF - 20 µF capacitor, depending on the impedance
of the source and output current. The input capacitor provides current for the switch node and a stable volt­age source for the internal device power. This capacitor should be connected as close as possible to the V and GND pins. For light-load applications, a 2.2 µF X7R or X5R ceramic capacitor can be used.
3.5 Analog Ground Pin (A
This ground is used by most internal circuits, such as the analog reference, control loop and other circuits.
3.6 Power Ground Pin (P
This is a separate ground connection used for the low­side synchronous switch.The length of the trace from the input cap return, output cap return and GND pin should be made as short as possible to minimize the noise in the system. The power ground and the analog ground should be connected in a single point.
GND
GND
)
)

3.7 Switch Node Pin (SW)

The switch node pin is connected internally to the low­side and high-side switch, and externally to the SW node, consisting of the inductor and boost capacitor. The SW node can rise very fast as a result of the internal switch turning on.

3.8 Boost Pin (BOOST)

The high side of the floating supply used to turn the integrated N-Channel high-side MOSFET on and off is connected to the boost pin.

3.9 Exposed Thermal Pad Pin (EP)

There is an internal electrical connection between the EP and the P
IN
GND
and A
GND
pins.
2013 Microchip Technology Inc. DS20005255A-page 11
MCP16311/2
NOTES:
DS20005255A-page 12 2013 Microchip Technology Inc.
MCP16311/2

4.0 DETAILED DESCRIPTION

4.1 Device Overview

The MCP16311/2 is a high-input voltage step-down regulator, capable of supplying 1A typical to a regulated output voltage from 2.0V to 12V. Internally, the trimmed 500 kHz oscillator provides a fixed frequency, while the Peak Current Mode Control architecture varies the duty cycle for output voltage regulation. An internal floating driver is used to turn the high-side integrated N-Channel MOSFET on and off. The power for this driver is derived from an external boost capacitor whose energy is replenished when the low-side N­Channel MOSFET is turned on.
4.1.1 PWM/PFM MODE OPTION
The MCP16311 selects the best operating switching mode (PFM or PWM) for high efficiency across a wide range of load currents. Switching to PFM mode at light­load currents results in a low quiescent current. During the sleep period (between two packets of switching cycles), the MCP16311 draws 44 µA (typical) from the supply line. The switching pulse packets represents a small percentage of the total running cycle, and the overall average current drawn from power line is small.
The disadvantages of PWM/PFM mode are higher output ripple voltage and variable PFM mode frequency. The PFM mode threshold is a function of the input voltage, output voltage and load (see Figure 2-
17).
4.1.2 PWM MODE-ONLY OPTION
In the MCP16312 devices, the PFM mode is disabled and the part runs only in PWM over the entire load range. During normal operation, the MCP16312 continues to operate at a constant 500 kHz switching frequency, keeping the output ripple voltage lower than in PFM mode. At lighter loads, the MCP16312 devices begin to skip pulses. Figure 2-18 represents the input voltage versus load current for the pulse skipping threshold in PWM-only mode.
Because the MCP16312 has very low output voltage ripple, it is recommended for noise-sensitive applications.

TABLE 4-1: PART NUMBER SELECTION

Part Number PWM/PFM PWM
MCP16311 X —
MCP16312 — X
4.1.3 INTERNAL REFERENCE VOLTAGE (V
)
FB
An integrated precise 0.8V reference combined with an external resistor divider sets the desired converter output voltage. The resistor divider range can vary without affecting the control system gain. High-value resistors consume less current, but are more susceptible to noise. Consult typical applications for the recommended resistors value.
4.1.4 INTERNAL BIAS REGULATOR (VCC)
An internal Low Dropout Voltage Regulator (LDO) is used to supply with 5.0V all the internal circuits. The LDO regulates the input voltage (V enough current (up to 50 mA), to sustain the drivers and internal bias circuitry. The V decoupled to ground with a 1 µF capacitor. In event of a thermal shutdown, the LDO will shut down. There is a short-circuit protection for V set at 150 mA.
In PFM mode switching, during sleep periods, V regulator enters in Low Quiescent Current mode, to avoid unnecessary power dissipation.
Avoid driving any external load using the V
) and can supply
IN
pin must be
CC
pin, with a threshold
CC
pin.
CC
CC
4.1.5 INTERNAL COMPENSATION
All control system components necessary for stable operation over the entire device operating range are integrated, including the error amplifier and inductor current slope compensation. To add the proper amount of slope compensation, the inductor value changes along with the output voltage (see Tab l e 5- 1 ).
4.1.6 EXTERNAL COMPONENTS
External components consist of:
• Input capacitor
• Output filter (inductor and capacitor)
• Boost capacitor
• Resistor divider
The selection of the external inductor, output capacitor and input capacitor is dependent upon the output volt­age and the maximum output current.
4.1.7 ENABLE INPUT
The enable input (EN) is used to disable the device. If disabled, the device consumes a minimum current from the input. Once enabled, the internal soft start controls the output voltage rate of rise, preventing high-inrush current and output voltage overshoot.
There is no internally pull-up or down resistor. To enable the converter, the EN pin must be pulled up. To disable the converter, the EN pin must be pulled low.
2013 Microchip Technology Inc. DS20005255A-page 13
MCP16311/2
C
OUT
C
BOOST
Slope Comp
PWM Latch
+
-
Overtemp
UVLO
R
Comp
Amp
+
-
C
COMP
R
COMP
HS Drive
CS
V
REG
BG
REF
SS
V
REF
OTEMP
500 kHz OSC
S
V
OUT
V
OUT
R
SENSE
V
IN
EN
R
TOP
R
BOT
BOOST
SW
P
GND
FB
V
REF
SHDN all blocks
+
-
C
IN
+
+
LS Drive
V
CC
C
VCC
V
CC
V
CC
PFM
PFM CTR
V
REF
A
GND
4.1.8 SOFT START
The internal reference voltage rate of rise is controlled during startup, minimizing the output voltage overshoot and the inrush current.
4.1.9 UNDERVOLTAGE LOCKOUT
An integrated Undervoltage Lockout (UVLO) prevents the converter from starting until the input voltage is high enough for normal operation. The converter will typi­cally start at 4.1V and operate down to 3.6V. Hysteresis is added to prevent starting and stopping during startup, as a result of loading the input voltage source.
4.1.10 OVERTEMPERATURE PROTECTION
Overtemperature protection limits the silicon die temperature to +150°C by turning the converter off. The normal switching resumes at +125°C.

FIGURE 4-1: MCP16311/2 Block Diagram.

DS20005255A-page 14 2013 Microchip Technology Inc.
MCP16311/2
SW
I
L
V
IN
I
OUT
V
OUT
Continuous Inductor Current Mode
S
1
ON
S
2
ON
SW
I
L
V
IN
I
OUT
Discontinuous Inductor Current Mode
S
1
ON
S
2
ON
Both OFF
V
IN
L
I
L
C
OUT
V
OUT
S
2
S
1

4.2 Functional Description

4.2.1 STEP-DOWN OR BUCK CONVERTER
The MCP16311/2 is a synchronous, step-down or buck converter capable of stepping input voltages ranging from 4.4V to 30V down to 2.0V to 24V for VIN>V
The integrated high-side switch is used to chop or modulate the input voltage using a controlled duty cycle. The integrated low-side switch is used to freewheel current when the high-side switch is turned off. High efficiency is achieved by using low-resistance switches and low equivalent series resistance (ESR), inductors and capacitors. When the high-side switch is turned on, a DC voltage is applied to the inductor (V
V
), resulting in a positive linear ramp of inductor
OUT
current. When the high-side switch turns off and the low-side switch turns on, the applied inductor voltage is equal to –V
, resulting in a negative linear ramp of
OUT
inductor current. In order to ensure there is no shoot­through current, a dead time where both switches are off is implemented between the high-side switch turning off and the low-side switch turning on, and the low-side switch turning off and the high-side switch turning on.
For steady-state, continuous inductor current operation, the positive inductor current ramp must equal the negative current ramp in magnitude. While operating in steady state, the switch duty cycle must be equal to the relationship of V output voltage regulation, under the condition that the inductor current is continuous, or never reaches zero. For discontinuous inductor current operation, the steady-state duty cycle will be less than V
OUT/VIN
for constant
OUT/VIN
maintain voltage regulation. When the inductor current reaches zero, the low-side switch is turned off so that current does not flow in the reverse direction, keeping the efficiency high. The average of the chopped input voltage or SW node voltage is equal to the output voltage, while the average inductor current is equal to the output current.
OUT
IN
.
–
to

FIGURE 4-2: Synchronous Step-Down Converter.

2013 Microchip Technology Inc. DS20005255A-page 15
MCP16311/2
4.2.2 PEAK CURRENT MODE CONTROL
The MCP16311/2 integrates a Peak Current Mode Control architecture, resulting in superior AC regulation while minimizing the number of voltage loop compensation components, and their size, for integration. Peak Current Mode Control takes a small portion of the inductor current, replicates it and compares this replicated current sense signal with the output of the integrated error voltage. In practice, the inductor current and the internal switch current are equal during the switch-on time. By adding this peak current sense to the system control, the step-down power train system can be approximated by a 1 system rather than a 2 the system complexity and increases its dynamic performance.
For Pulse-Width Modulation (PWM) duty cycles that exceed 50%, the control system can become bimodal, where a wide pulse followed by a short pulse repeats instead of the desired fixed pulse width. To prevent this mode of operation, an internal compensating ramp is summed into the current sense signal.
nd
order system. This reduces
st
order
4.2.3 PULSE-WIDTH MODULATION
The internal oscillator periodically starts the switching period, which in the MCP16311/2’s case occurs every 2 µs or 500 kHz. With the high-side integrated N-Channel MOSFET turned on, the inductor current ramps up until the sum of the current sense and slope compensation ramp exceeds the integrated error amplifier output. Once this occurs, the high-side switch turns off and the low-side switch turns on. The error amplifier output slews up or down to increase or decrease the inductor peak current feeding into the output LC filter. If the regulated output voltage is lower than its target, the inverting error amplifier output rises. This results in an increase in the inductor current to correct for errors in the output voltage. The fixed frequency duty cycle is terminated when the sensed inductor peak current, summed with the internal slope compensation, exceeds the output voltage of the error amplifier. The PWM latch is set by turning off the high­side internal switch and preventing it from turning on until the beginning of the next cycle.
The MCP16312 devices will operate in PWM-only mode even during periods of light load operation. By operating in PWM-only mode, the output ripple remains low and the frequency is constant (Figure 2-28). Operating in fixed PWM mode results in lower efficiency during light-load operation (when compared to PFM mode (MCP16311)).
When working close to the boundary conduction threshold, a jitter on the SW node may occur, reflecting in the output voltage. Although the low-frequency output component is very small, it may be desirable to completely eliminate this component. To achieve this, an RC Snubber between the SW node and GND is used.
Typical values for the snubber are: 680 pF and 430. Using such a snubber completely eliminates the jitter on the SW node, but slightly decreases the overall efficiency of the converter.
4.2.4 PFM MODE OPERATION
The MCP16311 devices are capable of automatic operation in normal PWM or PFM mode to maintain high efficiency at all loads. In PFM mode, the output ripple has a variable frequency component that changes with the input voltage and output current. With no load, the quiescent current drawn from the output is very low.
There are two comparators that decide when device starts switching in PFM mode. One of the comparators is monitoring the output voltage and has a reference of 810 mV, with 10 mV hysteresis. If the load current is low, the output rises and triggers the comparator, which will put the logic control of the drivers and other block circuitry (including the internal regulator V mode, to minimize the power consumption during the switching cycle’s off period. When the output voltage drops below its nominal value, PFM operation pulses one or several times to bring the output back into regulation (Figure 2-26). The second comparator fixes the minimum duty cycle for PFM mode. Minimum duty cycle in PFM mode depends on the sensed peak current and input voltage. As a result, the PFM-to-PWM mode threshold depends on load current and value of the input voltage (Figure 2-17). If the output load current rises above the upper threshold, the MCP16311 transitions smoothly into PWM mode.
) in Sleep
CC
DS20005255A-page 16 2013 Microchip Technology Inc.
4.2.5 HIGH-SIDE DRIVE
The MCP16311/2 features an integrated high-side N-Channel MOSFET for high efficiency step-down power conversion. An N-Channel MOSFET is used for its low resistance and size (instead of a P-Channel MOSFET). The N-Channel MOSFET gate must be driven above its source to fully turn on the device, resulting in a gate-drive voltage above the input to turn on the high side N-Channel. The high-side N-channel source is connected to the inductor and boost cap or switch node. When the high-side switch is off and the low-side is on, the inductor current flows through the low-side switch, providing a path to recharge the boost cap from the boost voltage source. The voltage for the boost cap is supplied from the internal regulator (VCC). An internal boost blocking diode is used to prevent cur­rent flow from the boost cap back into the regulator during the internal switch on time. If the boost voltage decreases significantly, the low side will be forced low for 90 ns in order to charge the boost capacitor.
MCP16311/2
2013 Microchip Technology Inc. DS20005255A-page 17
MCP16311/2
NOTES:
DS20005255A-page 18 2013 Microchip Technology Inc.
MCP16311/2
R
TOP
R
BOT
V
OUT
V
FB
------------ -1–


=
D
V
OUT
I
LSWRDSONL
+
V
IN
I
HSW
R
DSONH
–
------------------------------------------------------------ -= KV
OUT
L
=

5.0 APPLICATION INFORMATION

5.1 Typical Application s

The MCP16311/2 synchronous step-down converter operates over a wide input range, up to 30V maximum. Typical applications include generating a bias or V voltage for PIC® microcontrollers, digital control system bias supply for AC-DC converters and 12V industrial input and similar applications.

5.2 Adjustable Output Voltage Calculations

To calculate the resistor divider values for the MCP16311/2 adjustable version, use Equation 5-1. R
is connected to V
TOP
, and both are connected to the VFB input pin.
A
GND
EQUATION 5-1: RESISTOR DIVIDER
EXAMPLE 5-1: 3.3V RESISTOR DIVIDER
, R
OUT
is connected to
BOT
CALCULATION
DD

5.3 General Design Equations

The step down converter duty cycle can be estimated using Equation 5-2 while operating in Continuous Inductor Current mode. This equation accounts for the forward drop of the two internal N-Channel MOSFETS. As load current increases, the voltage drop in both internal switches will increase, requiring a larger PWM duty cycle to maintain the output voltage regulation. Switch voltage drop is estimated by multiplying the switch current times the switch resistance or R
EQUATION 5-2: CONTINUOUS INDUCTOR
CURRENT DUTY CYCLE
The MCP16311/2 device features an integrated slope compensation to prevent the bimodal operation of the PWM duty cycle. Internally, half of the inductor current down slope is summed with the internal current sense signal. For the proper amount of slope compensation, it is recommended to keep the inductor down-slope current constant by varying the inductance with V where K = 0.22 V/µH.
DSON
.
OUT
,
V
=3.3V
OUT
VFB=0.8V
=10k
R
BOT
R
=31.25k (standard value = 31.2 k)
TOP
V
= 3.296V (using standard value)
OUT
EXAMPLE 5-2: 5.0V RESISTOR DIVIDER
V
=5.0V
OUT
VFB=0.8V
=10k
R
BOT
=52.5k (standard value = 52.3 k)
R
TOP
V
= 4.984V (using standard values)
OUT
EXAMPLE 5-3: 12.0V RESISTOR DIVIDER
V
=12.0V
OUT
=0.8V
V
FB
R
=10k
BOT
R
=140k (standard value = 140 k)
TOP
The error amplifier is internally compensated to ensure loop stability. External resistor dividers, inductance and output capacitance, all have an impact on the control system and should be selected carefully and evaluated for stability. A 10 kΩ bottom resistor is recommended as a good trade-off for quiescent current and noise immunity.
EQUATION 5-3:
For example, for V is recommended.
= 3.3V, an inductance of 15 µH
OUT
TABLE 5-1: RECOMMENDED INDUCTOR
VALUES
V
OUT
2.0V 0.20 10 µH
3.3V 0.22 15 µH
5.0V 0.23 22 µH
12V 0.21 56 µH
15V 0.22 68 µH
KL
STANDARD
2013 Microchip Technology Inc. DS20005255A-page 19
MCP16311/2
I
L
V
INVOUT
–
L
--------------------------- -t
ON
=
I
LPK
I
L
2
-------- I
OUT
+=
Where:
Inductor ripple current = 319 mA
Inductor peak current = 960 mA

5.4 Input Capacitor Selection

The step-down converter input capacitor must filter the high-input ripple current, that results from pulsing or chopping the input voltage. The MCP16311/2 input voltage pin is used to supply voltage for the power train and as a source for internal bias. A low equivalent series resistance (ESR), preferably a ceramic capacitor, is recommended. The necessary capacitance is dependent upon the maximum load current and source impedance. Three capacitor parameters to keep in mind are the voltage rating, equivalent series resistance and the temperature rating. For wide temperature range applications, a multi-layer X7R dielectric is recommended, while for applications with limited temperature range, a multi-layer X5R dielectric is acceptable. Typically, input capacitance between 10 µF and 20 µF is sufficient for most applications. For applications with 100 mA to 200 mA load, a 4.7 µF to 2.2 µF X7R capacitor can be used, depending on the input source and its impedance. In case of an application with high variations of the input voltage, a higher capacitor value is recommended. The input capacitor voltage rating must be V
Table 5-2 contains the recommended range for the
input capacitor value.
plus margin.
IN

5.6 Inductor Selection

The MCP16311/2 is designed to be used with small surface-mount inductors. Several specifications should be considered prior to selecting an inductor. To optimize system performance, low DCR inductors should be used.
To optimize system performance, the inductance value is determined by the output voltage (Tab le 5 -1 ) so the inductor ripple current is somewhat constant over the output voltage range.
EQUATION 5-4: INDUCTOR RIPPLE
CURRENT
EXAMPLE 5-4:
VIN=12V
V
=3.3V
OUT
I
=800mA
OUT
EQUATION 5-5: INDUCTOR PEAK
CURRENT

5.5 Output Capac itor Selection

The output capacitor provides a stable output voltage during sudden load transients, and reduces the output voltage ripple. As with the input capacitor, X5R and X7R ceramic capacitors are well suited for this application. For typical applications, the output capacitance can be as low as 10 µF ceramic and as high as 100 µF electrolytic. In a typical application, a 20 µF output capacitance usage will result in a 10 mV output ripple.
The amount and type of output capacitance and equivalent series resistance will have a significant effect on the output ripple voltage and system stability. The range of the output capacitance is limited due to the integrated compensation of the MCP16311/2. See
Table 5-2 for the recommended output capacitor range.
The output voltage capacitor rating should be a
IN
plus margin.
OUT
2.2 µF None
20 µF None
minimum of V

TABLE 5-2: CAPACITOR VALUE RANGE

Parameter Min. Max.
C
C
OUT
For this example, an inductor with a current saturation rating of minimum 960 mA is recommended. Low DCR inductors result in higher system efficiency. A trade-off between size, cost and efficiency is made to achieve the desired results.
TABLE 5-3: MCP16311/2 RECOMMENDED
3.3V V
Part Number
Value
Coilcraft
XAL4040 15 0.109 2.8 4.0x4.0x2.1
LPS6235 15 0.125 2.00 6.0x6.0x3.5
MSS6132 15 0.135 1.56 6.1x6.1x3.2
XAL6060 15 0.057 1.78 6.36x6.5x6.1
MSS7341 15 0.057 1.78 7.3x7.3x4.1
INDUCTORS
OUT
(µH)
DCR ()
(A)
SAT
I
Size
WxLxH
(mm)
DS20005255A-page 20 2013 Microchip Technology Inc.
MCP16311/2
R
B
V
FB
I
LED
---------- -=
P
LOSSESVFBILED
=
Where:
V
FB
= Feedback Voltage
P
DIS
V
OUTIOUT
Efficiency
------------------------------ -V
OUTIOUT
–=
TABLE 5-3: MCP16311/2 RECOMMENDED
3.3V V
Part Number
Wurth Elektronik
74408943150 15 0.118 1.7 4.8x4.8x3.8
744062150 15 0.085 1.1 6.8x6.8x2.3
744778115 15 0.1 1.75 7.3x7.3x3.2
7447779115 15 0.07 2.2 7.3x7.3x4.5
Coiltronics
SD25 15 0.095 1.08 5.2x5.2x2.5
SD6030 14.1 0.103 1.1 6.0x6.0x3.0
TDK - EPC
B82462G4153M 15 0.097 1.05 6.0x6.0x3.0
B82462A4153K 15 0.21 1.5 6.0x6.0x3.0
®
®
Value
®
INDUCTORS
OUT
(µH)
DCR ()
(A)
SAT
I
Size
WxLxH
(mm)

5.7 Boost Capacitor

The boost capacitor is used to supply current for the internal high-side drive circuitry that is above the input voltage. The boost capacitor must store enough energy to completely drive the high-side switch on and off. A 100 nF X5R or X7R capacitor is recommended for all applications. The boost capacitor maximum voltage is 5V.
Another important aspect when creating such an application is the value of the inductor. The value of the inductor needs to follow Equation 5-3 or, as a guideline,
Table 5-1, where the output voltage is approximated as
the sum of the forward voltages of the LEDs and a 0.8V headroom for the sense resistor. A typical application is shown in Figure 5-3.
The following equations are used to determine the value and the losses for the sense resistor:
EQUATION 5-6:
EXAMPLE 5-5:
I
= 400 mA
LED
=0.8V
V
FB
VF= 1 x 3.2V (one white LED is used)
RB=2
P
LOSSES
= 0.32 W (sense resistor losses)
L=22µH

5.8 Vcc Capacitor

The VCC internal bias regulates at 5V. The VCC pin is current limited to 50 mA and protected to a short-circuit condition at 150 mA load. The VCC regulator must sustain all load and line transients because it supplies the internal drivers for power switches. For stability reasons, the V ceramic for extended temperature range, or X5R for limited temperature range.
capacitor must be at least 1 µF X7R
CC

5.9 MCP16312 – LED Constant Current Driver

MCP16312 can be used to drive an LED or a string of LEDs. The process of transforming the MCP16312 from a constant voltage source into a constant current source is simple. It implies that the sensing/feedback for the current is on the low-side, by adding a resistor in series with the string of LEDs.
When using the MCP16312 as an LED driver, care must be taken when selecting the sense resistor. Due to the high feedback voltage of 0.8V, there will be significant losses on the sense resistor, so a larger package with better power dissipation must be selected.

5.10 Thermal Calculations

The MCP16311/2 is available in MSOP-8 and DFN-8 packages. By calculating the power dissipation and applying the package thermal resistance (θ junction temperature is estimated. The maximum continuous junction temperature rating for the MCP16311/2 is +125°C.
To quickly estimate the internal power dissipation for the switching step-down regulator, an empirical calculation using measured efficiency can be used. Given the measured efficiency, the internal power dissipation is estimated in Equation 5-7. This power dissipation includes all internal and external component losses. For a quick internal estimate, subtract the estimated inductor DCR loss from the P calculation in Equation 5-7.
EQUATION 5-7: TOTAL POWER
DISSIPATION ESTIMATE
JA
), the
DIS
2013 Microchip Technology Inc. DS20005255A-page 21
MCP16311/2
The difference between the first term, input power, and the second term, power delivered, is the total system power dissipation. The inductor losses are estimated by P
L=IOUT
EXAMPLE 5-6: PO W ER DISS IPATION –
Total System Dissipation = 324 mW
MCP16311/2 internal power dissipation estimate:
2
xL
.
DCR
MCP16311/2 MSOP PACKAGE
VIN=12V
V
OUT
I
OUT
Efficiency = 92.5%
L
DCR
P
P
DIS–PL
JA
Estimated Junction
Temperature Rise
=5.0V
=0.8A
=0.15
=96 mW
L
=228mW
=211°C/W
= +48.1°C
EXAMPLE 5-7: PO W ER DISS IPATION –
MCP16311/2 DFN PACKAGE
V
=12V
IN
V
=3.3V
OUT
I
=0.8A
OUT
Efficiency = 90%
Total System Dissipation = 293 mW
=0.15
L
DCR
=96mW
P
L
MCP16311 internal power dissipation estimate:
P
DIS–PL
Estimated Junction
Temperature Rise
=197mW
=68°C/W
JA
= +13.4°C
DS20005255A-page 22 2013 Microchip Technology Inc.
MCP16311/2
V
IN
GND
V
FB
SW
V
IN
12V
V
OUT
5V @ 1A
C
OUT
C
IN
V
CC
C
VCC
L1
C
BOOST
BOOST
R
T
R
B
R
EN
Component Value
C
IN
2 x 10 µF
C
OUT
2 x 10 µF
L1 22 µH
R
T
52.3 k
R
B
10 k
R
EN
1 M
C
VCC
1 µF
C
BOOST
0.1 µF
EN

5.1 1 Printed Circuit Board (PCB) Layout Information

Good PCB layout techniques are important to any switching circuitry, and switching power supplies are no different. When wiring the switching high-current paths, short and wide traces should be used. Therefore, it is important that the input and output capacitors be placed as close as possible to the MCP16311/2, to minimize the loop area.
The feedback resistors and feedback signal should be routed away from the switching node and the switching current loop. When possible, ground planes and traces should be used to help shield the feedback signal and minimize noise and magnetic interference.
A good MCP16311/2 layout starts with the placement of the input capacitor, which supplies current to the input of the circuit when the switch is turned on. In addition to
supplying high-frequency switch current, the input capacitor also provides a stable voltage source for the internal MCP16311/2 circuitry. Unstable PWM opera­tion can result if there are excessive transients or ring­ing on the V
pin of the MCP16311/2 device. In
IN
Figure 5-1, the input capacitors are placed close to the
VIN pins. A ground plane on the bottom of the board provides a low-resistive and low-inductive path for the return current. The next priority in placement is the freewheeling current loop formed by output capacitors and inductance (L1), while strategically placing the out­put capacitor ground return close to the input capacitor ground return. Then, C
BOOST
should be placed between the boost pin and the switch node pin. This leaves space close to the MCP16311/2 VFB pin to place R
TOP
and R
. The feedback loop must be routed
BOT
away from the switch node, so noise is not coupled into the high-impedance V
FB
input.

FIGURE 5-1: MSOP-8 Recommended Layout, 5V Output Design.

2013 Microchip Technology Inc. DS20005255A-page 23
MCP16311/2
V
IN
GND
V
FB
SW
V
IN
12V
V
OUT
3.3V @ 1A
C
OUT
C
IN
V
cc
C
Vcc
L1
C
BOOST
BOOST
R
T
R
B
R
EN
Component Value
C
IN
2 x 10 µF
C
OUT
2 x 10 µF
L1 15 µH
R
T
31.2 k
R
B
10 k
R
EN
1 M
C
VCC
1 µF
C
BOOST
0.1 µF
EN

FIGURE 5-2: DFN Recommended Layout, 3.3V Output Design.

DS20005255A-page 24 2013 Microchip Technology Inc.
MCP16311/2
V
IN
GND
V
FB
SW
V
IN
12V
I
LED
= 400 mA
C
OUT
C
IN
V
CC
C
VCC
L1
C
BOOST
BOOST
R
B
R
EN
LED
Component Value
C
IN
2 x 10 µF
C
OUT
2 x 10 µF
L1 15 µH
R
B
2
R
EN
1M
C
VCC
1µF
C
BOOST
0.1 µF
LED 1 x White LED
R
B
V
FB
I
LED
-----------=
EN

FIGURE 5-3: MCP16312 - Typical LED Driver Application: 400 mA Output.

2013 Microchip Technology Inc. DS20005255A-page 25
MCP16311/2
NOTES:
DS20005255A-page 26 2013 Microchip Technology Inc.

6.0 PACKAGING INFORMATION

Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available characters for customer-specific information.
3
e
8-Lead TDFN (2x3)
Example
ABM
309
25
Part Number Code
MCP16311T-E/MNY ABM
MCP16312T-E/MNY ABU
8-Lead MSOP (3x3 mm) Example
16311E 309256

6.1 Package Marking Information

MCP16311/2
3
e
2013 Microchip Technology Inc. DS20005255A-page 27
MCP16311/2
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20005255A-page 28 2013 Microchip Technology Inc.
MCP16311/2
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2013 Microchip Technology Inc. DS20005255A-page 29
MCP16311/2
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20005255A-page 30 2013 Microchip Technology Inc.
MCP16311/2
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2013 Microchip Technology Inc. DS20005255A-page 31
MCP16311/2
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20005255A-page 32 2013 Microchip Technology Inc.
 !""#$%&'
( !"#$%&"'""($)%
*++&&&!!+$
MCP16311/2
2013 Microchip Technology Inc. DS20005255A-page 33
MCP16311/2
NOTES:
DS20005255A-page 34 2013 Microchip Technology Inc.

APPENDIX A: REVISION HISTORY

Revision A (December 2013)
• Original Release of this Document.
MCP16311/2
2013 Microchip Technology Inc. DS20005255A-page 35
MCP16311/2
NOTES:
DS20005255A-page 36 2013 Microchip Technology Inc.
MCP16311/2
PART NO. X /XX
PackageTemperature
Range
Device
Device: MCP16311: High-Efficiency, PFM/PWM Integrated
Synchronous Switch Step-Down Regulator (MSOP only)
MCP16311T: High-Efficiency, PFM/PWM Integrated
Synchronous Switch Step-Down Regulator (Tape and Reel) (MSOP and TDFN)
MCP16312: High-Efficiency, PFM Integrated Synchronous
Switch Step-Down Regulator (MSOP only)
MCP16312T: High-Efficiency, PWM Integrated Synchronous
Switch Step-Down Regulator (Tape and Reel) (MSOP and TDFN)
Temperature Range:
E = -40°C to +125°C (Extended)
Package: MNY* = Plastic Micro Small Outline Package
MS = Plastic Dual Flat, No Lead Package -
2x3x0.75mm Body
*Y = Nickel palladium gold manufacturing designator.
Examples:
a) MCP16311-E/MS: Extended Temperature,
8LD MSOP package
b) MCP16311T-E/MS: Tape and Reel,
Extended Temperature, 8LD MSOP package
c) MCP16311T-E/MNY: Tape and Reel,
Extended Temperature, 8LD 2 x 3 TDFN package
a) MCP16312-E/MS: Extended Temperature,
8LD MSOP package
b) MCP16312T-E/MS: Tape and Reel,
Extended Temperature, 8LD MSOP package
c) MCP16312T-E/MNY: Tape and Reel,
Extended Temperature, 8LD 2 x 3 TDFN package

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
2013 Microchip Technology Inc. DS20005255A-page 37
MCP16311/2
NOTES:
DS20005255A-page 38 2013 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights.

Trademarks

The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, K PICSTART, PIC and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their respective companies.
© 2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62077-771-8
EELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
32
logo, rfPIC, SST, SST Logo, SuperFlash
QUALITY MANAGEMENT S
2013 Microchip Technology Inc. DS20005255A-page 39
Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.
®
MCUs and dsPIC® DSCs, KEELOQ
®
code hopping

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10/28/13
DS20005255A-page 40 2013 Microchip Technology Inc.
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