Datasheet MBRS 540T3G ONS Datasheet

MBRS540T3G,
NRVBS540T3G

Surface Mount
Schottky Power Rectifier

The MBRS540T3 employs the Schottky Barrier principle in a large
area metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes in
surface mount applications where compact size and weight are critical
to the system.

Features

• Small Compact Surface Mountable Package with J−Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• Excellent Ability to Withstand Reverse Avalanche Energy Transients

• Guard−Ring for Stress Protection

• NRVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable

• These are PB−Free Packages*

Mechanical Characteristics

• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 @ 0.125 in

• Weight: 217 mg (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Polarity: Notch in Plastic Body Indicates Cathode Lead

• ESD Rating:

♦ Machine Model, C (> 400 V)
♦ Human Body Model, 3B (> 8000 V)

• Device Meets MSL 1 Requirements

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SCHOTTKY BARRIER

RECTIFIER

5.0 AMPERES, 40 VOLTS

SMC

CASE 403

MARKING DIAGRAM

AYWW

B540G

G

B540 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

MBRS540T3G SMC

(Pb−Free)

NRVBS540T3G SMC

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

2,500 /

Tape & Reel

2,500 /

Tape & Reel

†

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2013

July, 2013 − Rev. 8

1 Publication Order Number:

MBRS540T3/D

MBRS540T3G, NRVBS540T3G

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Average Rectified Forward Current

(At Rated V

, TC = 105°C)

R

Peak Repetitive Forward Current

(At Rated V

, Square Wave, 20 KHz, TC = 80°C)

R

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

Storage Temperature Range Tstg −65 to +150 °C

Operating Junction Temperature (Note 1) T

Voltage Rate of Change (Rated VR) dv/dt 10,000

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance,

Junction−to−Lead (Note 2)

Thermal Resistance,

Junction−to−Ambient (Note 2)

2. Rating applies when surface mounted on the minimum pad size recommended.

V

V

I

F(AV)

I

I

R

R

RRM

RWM

V

R

FRM

FSM

J

q

JL

q

JA

/dTJ < 1/R

D

40 V

5 A

10 A

190 A

−65 to +150 °C

V/ms

.

q

JA

°C/W

12

111

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Value Unit

Maximum Instantaneous Forward Voltage (Note 3)

(i

= 5.0 A, TC= 25°C)

F

Maximum Instantaneous Reverse Current (Note 3)

(Rated dc Voltage, T
(Rated dc Voltage, TC = 100°C)

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

= 25°C)

C

V

F

i

R

0.50

0.3

V

mA

15

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2

MBRS540T3G, NRVBS540T3G

TYPICAL CHARACTERISTICS

10

T

= 125°C

J

1

CURRENT (A)

, INSTANTANEOUS FORWARD

F

i

0.1

0.10 0.30 0.50

TJ = 100°C

0.20 0.40 0.60

V

, INSTANTANEOUS FORWARD VOLTAGE (V)

F

TJ = 25°C

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

100E−3

10E−3

1E−3

100E−6

10E−6

1E−6

100E−9

10E−9

, REVERSE CURRENT (A)

R

I

1E−9

100E−12

VR, REVERSE VOLTAGE (V)

TJ = 125°C

TJ = 100°C

TJ = 25°C

TJ = −55°C

TJ = −40°C

TJ = −55°C

30 4020100

10

= 125°C

T

J

1

CURRENT (A)

, INSTANTANEOUS FORWARD

F

i

0.1

0.10 0.30 0.50

0.20 0.40 0.70

V

, MAXIMUM INSTANTANEOUS FORWARD

F

VOLTAGE (V)

100E−3

TJ = 125°C

10E−3

TJ = 100°C

1E−3

TJ = 25°C

100E−6

TJ = −55°C

10E−6

, MAXIMUM REVERSE CURRENT (A)

R

I

1E−6

VR, REVERSE VOLTAGE (V)

TJ = 100°C

TJ = 25°C

TJ = −40°C

TJ = −55°C

0.60

30 4020100

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

9

dc

8

7

SQUARE WAVE

6

5

Ipk/IO = p

4

Ipk/IO = 5

CURRENT (A)

3

, AVERAGE FORWARD

2

O

I

1

0

25 50 75

freq = 20 kHz

100 150125

TL, LEAD TEMPERATURE (°C)

Figure 5. Current Derating

4.5

4

3.5

3

2.5

2

1.5

1

0.5

0

, AVERAGE POWER DISSIPATION (W)

FO

P

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3

SQUARE

WAVE

Ipk/IO = 5

Ipk/IO = 10

Ipk/IO = 20

134602 5

, AVERAGE FORWARD CURRENT (A)

I

O

798

Figure 6. Forward Power Dissipation

dc

Ipk/IO = p

MBRS540T3G, NRVBS540T3G

TYPICAL CHARACTERISTICS

1000

TJ = 25 °C

125

R

q

JA

= 12 °C/W

115

C, CAPACITANCE (pF)

100

VR, REVERSE VOLTAGE (V)

105

95

85

R

q

JA

= 81 °C/W

R

= 111 °C/W

q

JA

75

65

, DERATED OPERATING TEMPERATURE (°C)
T

55

J

V

, DC REVERSE VOLTAGE (V)

R

302520151050

40

R

= 136 °C/W

q

JA

302520151050

R

q

JA

= 47 °C/W

4035

Figure 7. Capacitance Figure 8. Typical Operating Temperature

Derating

1000

100

D = 0.5

0.2

10

0.1

P

(pk)

0.05

0.02

1

0.01

r(t), TRANSIENT THERMAL RESPONSE (C/W)

0.1

0.00001 0.0001 0.001 0.01 1 100 1000

SINGLE PULSE

0.1 10

t

1

t

2

DUTY CYCLE, D = t1/t

Test Type > min pad 1 oz
R

= min pad 1 oz C/W

q

JC

2

t, TIME (s)

Figure 9. Thermal Response − MBRS540T3G, NRVBS540T3G on min pad

4535

100

D = 0.5

0.2

10

0.1

P

0.05

0.02

1

0.01

r(t), TRANSIENT THERMAL RESPONSE (C/W)

0.1

0.00001 0.0001 0.001 0.01 1 100 1000

SINGLE PULSE

0.1 10

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

Test Type > min pad 1 oz
R

= min pad 1 oz C/W

q

JC

2

t, TIME (s)

Figure 10. Thermal Response − MBRS540T3G, NRVBS540T3G on 1” pad

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4

MBRS540T3G, NRVBS540T3G

PACKAGE DIMENSIONS

SMC

CASE 403−03

ISSUE E

H

E

E

bD

A

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.

4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03.

DIMAMIN NOM MAX MIN

A1 0.05 0.10 0.15 0.002

b 2.92 3.00 3.07 0.115
c 0.15 0.23 0.30 0.006

D 5.59 5.84 6.10 0.220

E 6.60 6.86 7.11 0.260

H

E

L 0.76 1.02 1.27 0.030

L1

MILLIMETERS

1.90 2.13 2.41 0.075

7.75 7.94 8.13 0.305 0.313 0.320

0.51 REF

INCHES

NOM MAX

0.084 0.095

0.004 0.006

0.118 0.121

0.009 0.012

0.230 0.240

0.270 0.280

0.040 0.050

0.020 REF

c

L1L

A1

SOLDERING FOOTPRINT*

4.343

0.171

3.810

0.150

2.794

0.110

SCALE 4:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ǒ

inches

mm

Ǔ

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MBRS540T3/D

5