Page 1
MBRS320T3, MBRS330T3,
MBRS340T3, MBRS360T3
Preferred Devices
Surface Mount
Schottky Power Rectifier
. . . employing the Schottky Barrier principle in a large area
metal–to–silicon power diode. State–of–the–art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
• Small Compact Surface Mountable Package with J–Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
(0.5 Volts Max @ 3.0 A, TJ = 25°C)
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 217 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped in 16 mm Tape and Reel, 2500 units per reel
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• Marking: B32, B33, B34, B36
MAXIMUM RATINGS
Please See the Table on the Following Page
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40, 60 VOLTS
SMC
CASE 403
PLASTIC
MARKING DIAGRAM
YWW
B3x
B3x = Device Code
x = 2, 3, 4 or 6
Y = Year
W = Work Week
Semiconductor Components Industries, LLC, 2000
October, 2000 – Rev. 3
ORDERING INFORMATION
Device Package Shipping
MBRS320T3 SMC 2500/Tape & Reel
MBRS330T3 SMC 2500/Tape & Reel
MBRS340T3 SMC 2500/Tape & Reel
MBRS360T3 SMC 2500/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MBRS340T3/D
Page 2
MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3
MAXIMUM RATINGS
Rating Symbol MBRS320T3 MBRS330T3 MBRS340T3 MBRS360T3 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current I
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
Operating Junction Temperature T
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Lead R
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1.)
(i
= 3.0 A, TJ = 25°C)
F
Maximum Instantaneous Reverse Current (Note 1.)
(Rated dc Voltage, T
(Rated dc Voltage, T
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2.0%.
= 25°C)
J
= 100°C)
J
V
V
RWM
V
F(AV)
I
FSM
RRM
R
J
θ
JL
V
F
i
R
20 30 40 60 Volts
3.0 @ TL = 100°C
4.0 @ T
= 90°C
L
Amps
80 80 80 80 Amps
– 65 to +125 – 65 to +125 – 65 to +125 °C
11 11 11 11 °C/W
Volts
0.50 0.50 0.525 0.740
mA
2.0
20
2.0
20
2.0
20
0.5
20
http://onsemi.com
2
Page 3
3
2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
i
MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3
T
= 100°C
C
T
= 25°C
C
, INSTANTANEOUS VOLTAGE (VOLTS)
v
F
Figure 1. Typical Forward Voltage
0.8 0.9 1.1
10.1 0.2 0.3 0.4 0.5 0.6 0.7
100
50
T
= 125°C
J
20
10
100°C
5
2
1
75°C
0.5
0.2
, REVERSE CURRENT (mA)
0.1
R
I
0.05
25°C
0.02
0.01
1.2 1.3 1.40
0 4 8 1216202428323640
, REVERSE VOLTAGE (VOLTS)
V
R
Figure 2. Typical Reverse Current
5
T
= 100°C
J
4
(CAPACITIVE LOAD)
3
I
PK
= 20
I
2
1
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
0
P
012345
AV
I
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
Figure 3. Power Dissipation
10
9
8
7
RATED VOLTAGE APPLIED
R
= 10.5°C/W
θ
JC
T
= 125°C
J
6
5
DC
4
3
2
, AVERAGE FORWARD CURRENT (AMPS)
SQUARE
WAVE
1
F(AV)
I
0
40 140
50 60 70 80 90 100 110 120 130
, CASE TEMPERATURE (°C)
T
C
Figure 4. Current Derating (Case) Figure 5. Typical Capacitance
5
SQUARE
10
WAVE
DC
500
TYPICAL CAPACITANCE AT 0 V = 480 pF
400
300
200
C, CAPACITANCE (pF)
100
0
04 8121620242832
, REVERSE VOLTAGE (VOLTS)
V
R
T
= 25°C
J
36 40
http://onsemi.com
3
Page 4
MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3
PACKAGE DIMENSIONS
SMC
PLASTIC PACKAGE
CASE 403–03
S
A
DB
J
PK
H
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
C
DIM MIN MAX MIN MAX
A 0.260 0.280 6.60 7.11
B 0.220 0.240 5.59 6.10
C 0.075 0.095 1.90 2.41
D 0.115 0.121 2.92 3.07
H 0.0020 0.0060 0.051 0.152
J 0.006 0.012 0.15 0.30
K 0.030 0.050 0.76 1.27
P 0.020 REF 0.51 REF
S 0.305 0.320 7.75 8.13
MILLIMETERSINCHES
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: ONlit–german@hibbertco.com
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: ONlit–french@hibbertco.com
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: ONlit@hibbertco.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, UK, Ireland
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–spanish@hibbertco.com
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: ONlit–asia@hibbertco.com
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
http://onsemi.com
4
MBRS340T3/D
Loading...